www.irf.com © 2009-2011 International Rectifier
July 13, 2011
IR11672AS
ADVANCED SMART RECTIFIER
TM
CONTROL IC
Features
• Secondary side high speed SR controller
• DCM, CrCM flyback and Resonant half-bridge
topologies
• 200V proprietary IC technology
• Max 500KHz switching frequency
• Anti-bounce logic and UVLO protection
• 7A peak turn off drive current
• Micropower start-up & ultra low quiescent current
• 10.7V gate drive clamp
• 50ns turn-off propagation delay
• Vcc range from 11.3V to 20V
• Direct sensing of MOSFET drain voltage
• Enable function synchronized with MOSF
ET VDS
transition
•
Cycle by Cycle MOT Check Circuit prevents multiple
false trigger GATE pulses
• Lead-free
• Compatible with 0.3
W Standby, Energy Star, CECP,
etc.
Typical Applications
• LCD & PDP TV, Telecom SMPS, AC-DC adapters,
ATX SMPS, Server SMPS
Product Summary
Topology Flyback,
Resonant Half-bridge
VD 200V
V
OUT
10.7V
I
o+
& I
o-
(typical) +2A & -7A
Turn on Propagation
Delay 60ns (typical)
Turn off Propagation
Delay 50ns (typical)
Package Options
8-Lead SOIC
Typical Connection Diagram
RMOT
Cdc
Rg
VD 5
VS 6
MOT
3OVT
2
EN
4
GND 7
VGATE 8
VCC
1U1
IR11671
Q1
XFM
Co
LOAD
Rdc
Vin
Rtn
Ci
Rs
Cs
IR11672AS
Datasheet No
PD
97469
IR11672AS
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2
Table of Contents Page
Description 3
Qualification Information 4
Absolute Maximum Ratings 5
Electrical Characteristics 6
Functional Block Diagram 8
Input/Output Pin Equivalent Circuit Diagram 9
Lead Definitions 10
Lead Assignments 10
Application Information and Additional Details 12
Package Details 22
Tape and Reel Details 23
Part Marking Information 24
Ordering Information 25
IR11672AS
www.irf.com © 2009-2011 International Rectifier
3
Description
IR11672A is a smart secondary-side driver IC designed to drive N-Channel power MOSFETs used as
synchronous rectifiers in isolated Flyback and resonant half-bridge converters. The IC can control one or more
paralleled N-MOSFETs to emulate the behavior of Schottky diode rectifiers. The drain to source voltage is
sensed differentially to determine the polarity of the current and turn the power switch on and off in proximity of
the zero current transition. The cycle-by-cycle MOT protection circuit can automatically detect no load
condition and turn off gate driver output to avoid negative current flowing through the MOSFETs. Ruggedness
and noise immunity are accomplished using an advanced blanking scheme and double-pulse suppression
which allow reliable operation in all operating modes.
IR11672AS
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4
Qualification Information
†
Qualification Level
Industrial
††
Comments: This family of ICs has passed JEDEC’s
Industrial qualification. IR’s Consumer qualification level is
granted by extension of the higher Industrial level.
Moisture Sensitivity Level MSL2
†††
260°C
(per IPC/JEDEC J-STD-020)
ESD Machine Model Class B
(per JEDEC standard JESD22-A115)
Human Body Model Class 2
(per EIA/JEDEC standard EIA/JESD22-A114)
IC Latch-Up Test Class I, Level A
(per JESD78)
RoHS Compliant Yes
†
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/
†† Higher qualification ratings may be available should the user have such requirements. Please contact your
International Rectifier sales representative for further information.
†††
Higher MSL ratings may be available for the specific package types listed here. Please contact your
International Rectifier sales representative for further information.
IR11672AS
www.irf.com © 2009-2011 International Rectifier
5
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The
thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Parameters Symbol
Min. Max. Units Remarks
Supply Voltage V
CC
-0.3 20 V
Enable Voltage V
EN
-0.3 20 V
Cont. Drain Sense Voltage V
D
-3 200 V
Pulse Drain Sense Voltage V
D
-5 200 V
Source Sense Voltage V
S
-3 20 V
Gate Voltage V
GATE
-0.3 20 V V
CC
=20V, Gate off
Operating Junction Temperature T
J
-40 150 °C
Storage Temperature T
S
-55 150 °C
Thermal Resistance R
JA
128 °C/W SOIC-8
Package Power Dissipation P
D
970 mW SOIC-8, T
AMB
=25°C
Switching Frequency fsw 500 kHz
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Symbol Definition Min. Max. Units
V
CC
Supply voltage 11.4 18
V
V
D
Drain Sense Voltage -3 200
T
J
Junction Temperature
-25 125 °C
Fsw Switching Frequency --- 500 kHz
Recommended Component Values
Symbol Component Min. Max. Units
R
MO
T
MOT pin resistor value 5 75 kΩ
IR11672AS
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6
Electrical Characteristics
VCC=15V and T
A
= 25°C unless otherwise specified. The output voltage and current (V
O
and I
O
) parameters
are referenced to GND (pin7).
Supply Section
Parameters Symbol
Min. Typ. Max. Units Remarks
Supply Voltage Operating
Range V
CC
11.4 18 V GBD
V
CC
Turn On Threshold V
CC ON
9.8 10.55 11.3 V
V
CC
Turn Off Threshold V
CC UVLO
8.4 9 9.7 V (Under Voltage Lock Out)
V
CC
Turn On/Off Hysteresis V
CC HYST
1.55 V
Operating Current I
CC
8.5 10 mA C
LOAD
=1nF,f
SW
=400kHz
50 65 mA C
LOAD
=10nF,f
SW
=400kHz
Quiescent Current I
QCC
1.8 2.2 mA
Start-up Current I
CC START
100 200 µA V
CC
=V
CC
ON
- 0.1V
Sleep Current I
SLEEP
150 200 µA V
EN
=0V, V
CC
=15V
Enable Voltage High V
ENHI
2.15 2.70 3.2 V
Enable Voltage Low V
ENLO
1.2 1.6 2.0 V
Enable Pull-up Resistance R
EN
1.5 MΩ GBD
Comparator Section
Parameters Symbol
Min. Typ. Max. Units Remarks
Turn-off Threshold V
TH1
-7 -3.5 0 mV OVT = 0V, V
S
=0V
-14 -9.5 -6 OVT floating, V
S
=0V
-22 -18 -14 OVT = VCC, V
S
=0V
Turn-on Threshold V
TH2
-150 -50 mV
Hysteresis V
HYST
55 mV
Input Bias Current I
IBIAS1
1 7.5 µA V
D
= -50mV
Input Bias Current I
IBIAS2
30 100 µA V
D
= 200V
Comparator Input Offset V
OFFSET
2 mV GBD
Input CM Voltage Range V
CM
-0.15 2 V
One-Shot Section
Parameters Symbol
Min. Typ. Max. Units Remarks
Blanking pulse duration t
BLANK
9 17 25 µs
Reset Threshold V
TH3
2.5 V V
CC
=10V – GBD
5.4 V V
CC
=20V – GBD
Hysteresis V
HYST3
40 mV V
CC
=10V – GBD
IR11672AS
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7
Electrical Characteristics
VCC=15V and T
A
= 25°C unless otherwise specified. The output voltage and current (V
O
and I
O
) parameters
are referenced to GND (pin7).
Minimum On Time Section
Parameters Symbol
Min. Typ. Max. Units Remarks
Minimum on time T
ONmin
190 240 290 ns R
MOT
=5kΩ, V
CC
=12V
2.48 3.1 3.72 µs R
MOT
=75kΩ, V
CC
=12V
Gate Driver Section
Parameters Symbol
Min. Typ. Max. Units Remarks
Gate Low Voltage V
GLO
0.3 0.5 V I
GATE
= 200mA
Gate High Voltage V
GTH
9.0 10.7 12.5 V V
CC
=12V-18V
(internally clamped)
Rise Time t
r1
18 ns C
LOAD
= 1nF, V
CC
=12V
t
r2
125 ns C
LOAD
= 10nF, V
CC
=12V
Fall Time t
f1
10 ns C
LOAD
= 1nF, V
CC
=12V
t
f2
30 ns C
LOAD
= 10nF, V
CC
=12V
Turn on Propagation Delay t
Don
60 95 ns V
DS
to V
GATE
-100mV overdrive
Turn off Propagation Delay t
Doff
50 75 ns V
DS
to V
GATE
-100mV overdrive
Pull up Resistance r
up
4 Ω I
GATE
= 1A – GBD
Pull down Resistance r
down
0.7 Ω I
GATE
= -200mA
Output Peak Current(source)
I
O source
2 A C
LOAD
= 10nF – GBD
Output Peak Current (sink) I
O sink
7 A C
LOAD
= 10nF – GBD
IR11672AS
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8
Functional Block Diagram
IR11672AS
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9
I/O Pin Equivalent Circuit Diagram
IR11672AS
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10
Lead Definitions
PIN# Symbol Description
1 VCC Supply Voltage
2 OVT Offset Voltage Trimming
3 MOT Minimum On Time
4 EN Enable
5 VD FET Drain Sensing
6 VS FET Source Sensing
7 GND Ground
8 VGATE Gate Drive Output
Lead Assignments
IR11672AS
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11
Detailed Pin Description
VCC: Power Supply
This is the supply voltage pin of the IC and it is monitored by the under voltage lockout circuit. It is possible to
turn off the IC by pulling this pin below the minimum turn off threshold voltage, without damage to the IC.
To prevent noise problems, a bypass ceramic capacitor connected to Vcc and COM should be placed as
close as possible to the IR11672A. This pin is internally clamped.
OVT: Offset Voltage Trimming
The OVT pin will program the amount of input offset voltage for the turn-off threshold V
TH1
.
The pin can be optionally tied to ground, to VCC or left floating, to select 3 ranges of input offset trimming.
This programming feature allows for accommodating different R
DSon
MOSFETs.
MOT: Minimum On Time
The MOT programming pin controls the amount of minimum on time. Once V
TH2
is crossed for the first time,
the gate signal will become active and turn on the power FET. Spurious ringings and oscillations can trigger
the input comparator off. The MOT blanks the input comparator keeping the FET on for a minimum time.
The MOT is programmed between 200ns and 3us (typ.) by using a resistor referenced to COM.
EN: Enable
This pin is used to activate the IC “sleep” mode by pulling the voltage level below 1.6V (typ). In sleep mode the
IC will consume a minimum amount of current. All switching functions will be disabled and the gate will be
inactive.
VD: Drain Voltage Sense
VD is the voltage sense pin for the power MOSFET Drain. This is a high voltage pin and particular care must
be taken in properly routing the connection to the power MOSFET drain.
Additional filtering and or current limiting on this pin are not recommended as it would limit switching
performance of the IC.
VS: Source Voltage Sense
VS is the differential sense pin for the power MOSFET Source. This pin must not be connected directly to the
power ground pin (7) but must be used to create a Kelvin contact as close as possible to the power MOSFET
source pin.
GND: Ground
This is ground potential pin of the integrated control circuit. The internal devices and gate driver are
referenced to this point.
VGATE: Gate Drive Output
This is the gate drive output of the IC. Drive voltage is internally limited and provides 2A peak source and 7A
peak sink capability. Although this pin can be directly connected to the power MOSFET gate, the use of
minimal gate resistor is recommended, especially when putting multiple FETs in parallel.
Care must be taken in order to keep the gate loop as short and as small as possible in order to achieve
optimal switching performance.
IR11672AS
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Application Information and Additional Details
State Diagram
UVLO/Sleep Mode
The IC remains in the UVLO condition until the voltage on the VCC pin exceeds the V
CC turn on threshold
voltage, V
CC ON
. During the time the IC remains in the UVLO state, the gate drive circuit is inactive and the IC
draws a quiescent current of I
CC START
. The UVLO mode is accessible from any other state of operation
whenever the IC supply voltage condition of VCC < V
CC UVLO
occurs.
The sleep mode is initiated by pulling the EN pin below 1.6
V (typ). In this mode the IC is essentially shut down
and draws a very low quiescent supply current.
Normal Mode and Synchronized Enable Function
The IC enters in normal operating mode once the UVLO voltage has been exceeded
and the EN voltage is
above V
ENHI
threshold. When the IC enters the Normal Mode from the UVLO Mode
, the GATE output is
disabled (stays low) until V
DS
exceeds V
TH3
to activate the gate. This ensure
s that the GATE output is not
e
nabled in the middle of a switching cycle. This logic prevents any reverse currents across the device due to
the minimum on time function in the IC. The gate will continuously drive the SR MOSFET after this one-
time
activation. The Cycle by Cycle MOT protection circuit is enabled in Normal Mode.
MOT Protection Mode
If the secondary current conduction time is shorter than the MOT (Minimum On Time) setting, the next driver
output is disabled. This functi
on can avoid reverse current that occurs when the system works at very low
duty-
cycles or at very light/no load conditions and reduce system standby power consumption by disabling
GATE outputs. The Cycle by Cycle MOT Check circuit is always activated under
Normal Mode and MOT
Protection Mode, so that the IC can automatically resume
normal operation once the load increases to a level
and the secondary current conduction time is longer than MOT.
IR11672AS
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General Description
The IR11672A Smart Rectifier IC can emulate the operation of diode rectifier by properly driving a
Synchronous Rectifier (SR) MOSFET. The direction of the rectified current is sensed by the input comparator
using the power MOSFET R
DSon
as a shunt resistance and the GATE pin of the MOSFET is driven
accordingly. Internal blanking logic is used to prevent spurious transitions and guarantee operation in
continuous (CCM), discontinuous (DCM) and critical (CrCM) conduction mode.
IR11672A is suitable for Flyback and Resonant Half-Bridge topologies.
V
Gate
V
TH1
V
TH2
V
TH3
V
DS
Figure 1: Input comparator thresholds
Flyback Application
The modes of operation for a Flyback circuit differ mainly for the turn-off phase of the SR switch, while the
turn-on phase of the secondary switch (which corresponds to the turn off of the primary side switch) is
identical.
Turn-on phase
When the conduction phase of the SR FET is initiated, current will start flowing through its body diode,
generating a negative V
DS
voltage across it. The body diode has generally a much higher voltage drop than the
one caused by the MOSFET on resistance and therefore will trigger the turn-on threshold V
TH2
.
At that point the IR11672A will drive the gate of MOSFET on which will in turn cause the conduction voltage
VDS to drop down. This drop is usually accompanied by some amount of ringing, that can trigger the input
comparator to turn off; hence, a Minimum On Time (MOT) blanking period is used that will maintain the
power MOSFET on for a minimum amount of time.
The programmed MOT will limit also the minimum duty cycle of the SR MOSFET and, as a consequence, the
max duty cycle of the primary side switch.
DCM/CrCM Turn-off phase
Once the SR MOSFET has been turned on, it will remain on until the rectified current will decay to the level
where V
DS
will cross the turn-off threshold V
TH1
. This will happen differently depending on the mode of
operation.
In DCM the current will cross the threshold with a relatively low dI/dt. Once the threshold is crossed, the
current will start flowing again thru the body diode, causing the V
DS
voltage to jump negative. Depending on
the amount of residual current, V
DS
may trigger once again the turn on threshold: for this reason V
TH2
is
blanked for a certain amount of time (T
BLANK
) after V
TH1
has been triggered.
The blanking time is internally set. As soon as V
DS
crosses the positive threshold V
TH3
also the blanking time is
terminated and the IC is ready for next conduction cycle.
IR11672AS
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14
I
PRIM
I
SEC
V
SEC
V
PRIM
time
time
T1 T2 T3
Figure 2: Primary and secondary currents and voltages for DCM mode
I
PRIM
I
SEC
V
SEC
V
PRIM
time
time
T1 T2
Figure 3: Primary and secondary currents and voltages for CrCM mode
CCM Turn-off phase
In CCM mode the turn off transition is much steeper and dI/dt involved is much higher. The turn on phase is
identical to DCM or CrCM and therefore won’t be repeated here.
During the SR FET conduction phase the current will decay linearly, and so will V
DS
on the SR FET.
Once the primary switch will start to turn back on, the SR FET current will rapidly decrease crossing V
TH1
and
turning the gate off. The turn off speed is critical to avoid cross conduction on the primary side and reduce
switching losses.
Also in this case a blanking period will be applied, but given the very fast nature of this transition, it will be
reset as soon as V
DS
crosses V
TH3
.
IR11672AS
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15
I
PRIM
I
SEC
V
SEC
V
PRIM
time
time
T1 T2
Figure 4: Primary and secondary currents and voltages for CCM mode
The operation waveforms of IR11672A in a flyback converter under CCM mode and DCM/CrCM were shown
in Figure 5 and Figure 6 respectively.
I
SEC
V
DS
time
time
T1 T2
V
TH1
V
TH2
V
TH3
Blanking
MOT time
Gate Drive
Figure 5: Secondary side CCM operation
IR11672AS
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16
Gate Drive
I
SEC
V
DS
Blanking
time
time
T1 T2
V
TH1
V
TH2
V
TH3
10us blankingMOT
Figure 6: Secondary side DCM/CrCM operation
Resonant Half-Bridge Application
The typical application circuit of IR11672A in LLC half-bridge is shown in Figure 7.
Rmot2
CVCC2
Rcc2
Rmot1
CVCC1
Rcc1
VCC
1
OVT
2
MOT
3
EN
4
GATE 8
GND 7
VS 6
VD 5
IR11672A
Lr T1
Cout
M2 Lm
M1
Vin
Cr
Rtn
M3
M4
Rg1
VOUT
VCC
1
OVT
2
MOT
3
EN
4
GATE 8
GND 7
VS 6
VD 5
IR11672A
Rg2
Figure 7: Resonant half-bridge application circuit
In resonant half-bridge converter, the turn-on phase and turn-off phase is similar to flyback except the current
shape is sinusoid. The typical operation waveform can be found below.
IR11672AS
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17
Figure 8: Resonant half-bridge operation waveform
MOT Protection Mode
The MOT protection prevents reverse current in SR MOSFET which could happen at light load if the MOT
time is set very long. The IC disables the gate output in the protection mode and automatically resume to
normal operation as the load increasing to a level where the SR current conduction time is longer than MOT.
This function works in both flyback and resonant half-bridge topologies. Figure 9 is an example in Flyback
converter.
Figure 9: MOT Protection Mode
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18
Synchronized Enable Function
Sync Enable function guarantees the VGATE always starts switching at the beginning of a switching cycle.
This function works in both flyback and resonant half-bridge topologies. Figure 10 is an example in resonant
half-bridge converter.
Figure 10: Synchronized Enable Function (resonant half-bridge)
General Timing Waveform
t
VCC
VCC ON
UVLO
VCC UVLO
NORMALUVLO
Figure 11: Vcc UVLO
10%
90%
t
rise
V
TH2
t
fall
V
TH1
t
Doff
t
Don
50%
V
DS
V
Gate
Figure 12: Timing waveform
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19
0.01
0.1
1
10
5 V 10 V 15 V 20 V
I
SUPPLY
(mA)
Supply voltage
Figure 13: Supply Current vs. Supply Voltage
8.0 V
8.5 V
9.0 V
9.5 V
10.0 V
10.5 V
11.0 V
-50 °C 0 °C 50 °C 100 °C 150 °C
VCC UVLO Thresholds
Temperature
VCC ON
VCC UVLO
Figure 14: Undervoltage Lockout vs. Temperature
1.0
1.2
1.4
1.6
1.8
2.0
-50 °C 0 °C 50 °C 100 °C 150 °C
I
CC
Supply Current (mA)
Temperature
I
QCC
Figure 15: Icc Quiescent Currrent vs.
Temperature
7.5
7.7
7.9
8.1
8.3
8.5
-50 °C 0 °C 50 °C 100 °C 150 °C
I
CC
Supply Current (mA)
Temperature
Icc @400KHz, C
LOAD
=1nF
Figure 16: Icc Supply Currrent @1nF Load vs.
Temperature
IR11672AS
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20
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
-50 °C 0 °C 50 °C 100 °C 150 °C
V
TH1
Threshold (mV)
Temperature
OVT=GND
OVT=Floating
OVT=VCC
Figure 17: V
TH1
vs. Temperature
-150.0
-100.0
-50.0
0.0
-50 °C 0 °C 50 °C 100 °C 150 °C
VTH2 Thresholds (mV)
Temperature
Figure 18: V
TH2
vs. Temperature
0.0
25.0
50.0
75.0
100.0
-50 °C 0 °C 50 °C 100 °C 150 °C
Comparator Hysteresis V
HYST
(mV)
Temperature
Figure 19: Comparator Hysteresis vs.
Temperature
-11.2
-11.0
-10.8
-10.6
-10.4
-10.2
-10.0
-9.8
-9.6
-9.4
-9.2
-9.0
-50 °C 0 °C 50 °C 100 °C 150 °C
V
TH1
Threshold (mV)
Temperature
VS=-150mV
VS=0V
VS=+2V
Figure 20: V
TH1
vs. Temperature and Common
Mode (OVT=Floating)
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-90.0
-85.0
-80.0
-75.0
-70.0
-65.0
-60.0
-55.0
-50.0
-50 °C 0 °C 50 °C 100 °C 150 °C
V
TH1
Threshold (mV)
Temperature
VS=-150mV
VS=0V
VS=+2V
Figure 21: V
TH2
vs. Temperature and
Common Mode
0 us
1 us
2 us
3 us
4 us
-50 °C 0 °C 50 °C 100 °C 150 °C
Minimum On Time (us)
Temperature
RMOT=5k
RMOT=75k
Figure 22: MOT vs Temperature
1.0 V
1.5 V
2.0 V
2.5 V
3.0 V
-50 °C 0 °C 50 °C 100 °C 150 °C
Enable Thresholds
Temperature
VEN HI VEN LO
Figure 23: Enable Threshold vs. Temperature
35 ns
40 ns
45 ns
50 ns
55 ns
60 ns
65 ns
70 ns
75 ns
80 ns
-50 °C 0 °C 50 °C 100 °C 150 °C
Propagation Delay
Temperature
Turn-on Propagation Delay
Turn-off Propagation Delay
Figure 24: Turn-on and Turn-off Propagation
Delay vs. Temperature
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Package Details: SOIC8N
IR11672AS
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23
Tape and Reel Details: SOIC8N
E
F
A
C
D
G
A
BH
NOTE : CONTROLLING
DIMENSION IN MM
LOADED TAPE FEED DIRECTION
A
H
F
E
G
D
B
C
CARRIER TAPE DIMENSION FOR 8SOICN
Code Min Max Min Max
A 7.90 8.10 0.311 0.318
B 3.90 4.10 0.153 0.161
C 11.70 12.30 0.46 0.484
D 5.45 5.55 0.214 0.218
E 6.30 6.50 0.248 0.255
F 5.10 5.30 0.200 0.208
G 1.50 n/a 0.059 n/a
H 1.50 1.60 0.059 0.062
Metric Imperial
REEL DIMENSIONS FOR 8SOICN
Code Min Max Min Max
A 329.60 330.25 12.976 13.001
B 20.95 21.45 0.824 0.844
C 12.80 13.20 0.503 0.519
D 1.95 2.45 0.767 0.096
E 98.00 102.00 3.858 4.015
F n/a 18.40 n/a 0.724
G 14.50 17.10 0.570 0.673
H 12.40 14.40 0.488 0.566
Metric Imperial
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24
Part Marking Information
IR11672AS
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25
Ordering Information
Base Part Number Package Type Standard Pack Complete Part Number
Form Quantity
IR11672AS SOIC8N Tube/Bulk 95 IR11672ASPBF
Tape and Reel 2500 IR11672ASTRPBF
The information provided in this document is believed to be accurate and reliable. However, International Rectifier assumes no
responsibility for the consequences of the use of this information. International Rectifier assumes no responsibility for any
infringement of patents or of other rights of third parties which may result from the use of this information. No license is granted by
implication or otherwise under any patent or patent rights of International Rectifier. The specifications mentioned in this document are
subject to change without notice. This document supersedes and replaces all information previously supplied.
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