N-Channel P-Channel
Drain-Source Voltage VDS 30 -30
Gate-Source Voltage VGS ± 20
TA = 25°C 6.5 -4.9
TA = 70°C 5.2 -3.9
Pulsed Drain Current IDM 30 -30
Continuous Source Current (Diode Conduction) I
S2.5 -2.5
TA = 25°C 2.0
TA = 70°C 1.3
Single Pulse Avalanche Energy EAS 82 140 mJ
Avalanche Current IAR 4.0 -2.8 A
Repetitive Avalanche Energy EAR 0.20 mJ
Peak Diode Recovery dv/dt dv/dt 5.0 -5.0 V/ ns
Junction and Storage Temperature Range TJ, TSTG -55 to + 150 °C
HEXFET® Power MOSFET
PD - 95267
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
8/17/04
SO-8
lGeneration V Technology
lUltra Low On-Resistance
lDual N and P Channel MOSFET
lSurface Mount
lFully Avalanche Rated
IRF7319PbF
Description
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient RθJA 62.5 °C/W
Continuous Drain Current
Maximum Power Dissipation
A
ID
PD
V
W
Symbol Maximum Units
N-Ch P-Ch
VDSS 30V -30V
RDS(on) 0.029Ω 0.058Ω
D
1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
D
1
D
2
D
2
G
1
S
2
G
2
S1
Top View
8
1
2
3
45
6
7
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
lLead-Free
IRF7319PbF
Surface mounted on FR-4 board, t ≤ 10sec.
Parameter Min. Typ. Max. Units Conditions
N-Ch 30 VGS = 0V, ID = 250µA
P-Ch -30 VGS = 0V, ID = -250µA
N-Ch 0.022 Reference to 25°C, ID = 1mA
P-Ch 0.022 Reference to 25°C, ID = -1mA
0.023 0.029 VGS = 10V, ID = 5.8A
0.032 0.046 VGS = 4.5V, ID = 4.7A
0.042 0.058 VGS = -10V, ID = -4.9A
0.076 0.098 VGS = -4.5V, ID = -3.6A
N-Ch 1.0 VDS = VGS, ID = 250µA
P-Ch -1.0 VDS = VGS, ID = -250µA
N-Ch 14 VDS = 15V, ID = 5.8A
P-Ch 7.7 VDS = -15V, ID = -4.9A
N-Ch 1.0 VDS = 24V, VGS = 0V
P-Ch -1.0 VDS = -24V, VGS = 0V
N-Ch 25 VDS = 24V, VGS = 0V, TJ = 55°C
P-Ch -25 VDS = -24V, VGS = 0V, TJ = 55°C
IGSS Gate-to-Source Forward Leakage N-P ±100 VGS = ±20V
N-Ch 22 33
P-Ch 23 34
N-Ch 2.6 3.9
P-Ch 3.8 5.7
N-Ch 6.4 9.6
P-Ch 5.9 8.9
N-Ch 8.1 12
P-Ch 13 19
N-Ch 8.9 13
P-Ch 13 20
N-Ch 26 39
P-Ch 34 51
N-Ch 17 26
P-Ch 32 48
N-Ch 650
P-Ch 710
N-Ch 320 pF
P-Ch 380
N-Ch 130
P-Ch 180
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient
RDS(ON) Static Drain-to-Source On-Resistance
VGS(th) Gate Threshold Voltage
gfs Forward Transconductance
IDSS Drain-to-Source Leakage Current
QgTotal Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on) Turn-On Delay Time
trRise Time
td(off) Turn-Off Delay Time
tfFall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V
V/°C
Ω
V
S
µA
nC
ns
N-Channel
ID = 5.8A, VDS = 15V, VGS = 10V
P-Channel
ID = -4.9A, VDS = -15V, VGS = -10V
N-Channel
VDD = 15V, ID = 1.0A, RG = 6.0Ω,
RD = 15Ω
P-Channel
VDD = -15V, ID = -1.0A, RG = 6.0Ω,
RD = 15Ω
N-Channel
VGS = 0V, VDS = 25V, = 1.0MHz
P-Channel
VGS = 0V, VDS = -25V, = 1.0MHz
N-Ch
P-Ch
Parameter Min. Typ. Max. Units Conditions
N-Ch 2.5
P-Ch -2.5
N-Ch 30
P-Ch -30
N-Ch 0.78 1.0 TJ = 25°C, IS = 1.7A, VGS = 0V
P-Ch -0.78 -1.0 TJ = 25°C, IS = -1.7A, VGS = 0V
N-Ch 45 68
P-Ch 44 66
N-Ch 58 87
P-Ch 42 63
Source-Drain Ratings and Characteristics
ISContinuous Source Current (Body Diode)
ISM Pulsed Source Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
A
V
ns
nC
N-Channel
TJ = 25°C, IF =1.7A, di/dt = 100A/µs
P-Channel
TJ = 25°C, IF = -1.7A, di/dt = 100A/µs
N-Channel ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -2.8A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 22 )
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
N-Channel Starting TJ = 25°C, L = 10mH RG = 25Ω, IAS = 4.0A. (See Figure 12)
P-Channel Starting TJ = 25°C, L = 35mH RG = 25Ω, IAS = -2.8A.
nA
IRF7319PbF
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
N-Channel
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 25°C
A
J
DS
V , Drain-to-Source Voltage (V)
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
D
I , Drain-to-Source Current (A)
1
10
100
0.1 1 10
A
DS
V , Drain-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 150°C
J
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
1
10
100
3.0 3.5 4.0 4.5 5.0
T = 25°C
T = 150°C
J
J
GS
V , Gate-to-Source Voltage (V)
D
I , D r ai n-to- Source Curr ent (A)
A
V = 10V
20µs PULSE WIDTH
DS
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6
T = 25°C
T = 150°C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
IRF7319PbF
Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
N-Channel
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS (on) , Drain-to-Source On Resistance (Ω)
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temp erature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
5.8A
0
.020
0
.024
0
.028
0
.032
0
.036
0
.040
0 10203040
A
I , Drain Current (A)
D
V = 10V
GS
V = 4.5V
GS
0
.00
0
.02
0
.04
0
.06
0
.08
0
.10
0
.12
0 3 6 9 12 15
A
GS
V , Gate-to-Source Voltage (V)
I = 5.8A
D
0
40
80
120
160
200
25 50 75 100 125 150
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (°C)
I
TOP 1.8A
3.2A
BOTTOM 4.0A
D
ID
IRF7319PbF
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
N-Channel
0
300
600
900
1200
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
010 20 30 40
0
4
8
12
16
20
Q , Total Gate Charge (nC )
V , Gate-to-Source Voltage (V)
G
GS
I =
D5.8A V = 15V
DS
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangul ar Pulse Dur ation (sec)
Thermal R esponse (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF7319PbF
Fig 14. Typical Transfer Characteristics
Fig 13. Typical Output Characteristics
Fig 12. Typical Output Characteristics
Fig 15. Typical Source-Drain Diode
Forward Voltage
P-Channel
1
10
100
0.1 1 10
D
DS
20µs PULSE WIDTH
T = 25°C
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
J
-3.0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
1
10
100
0.1 1 10
D
DS
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
-3.0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
20µs PULSE WIDTH
T = 150°C
J
1
10
100
3.0 3.5 4.0 4.5 5.0 5.5 6.0
T = 25°C
T = 150°C
J
J
GS
D
A
-I , Drai n- to-Sour ce C ur rent ( A)
-V , Gate-to-Source Voltage (V)
V = -10V
20µs PULSE WIDTH
DS
1
10
100
0.4 0.6 0.8 1.0 1.2 1.
4
T = 25°C
T = 150°C
J
J
V = 0V
GS
SD
SD
A
-I , Reverse Drain Current (A)
-V , Source-to-Drain Voltage (V)
IRF7319PbF
Fig 16. Normalized On-Resistance
Vs. Temperature
Fig 19. Maximum Avalanche Energy
Vs. Drain Current
Fig 17. Typical On-Resistance Vs. Drain
Current
Fig 18. Typical On-Resistance Vs. Gate
Voltage
P-Channel
RDS(on) , Drain-to-Source On Resistance ( Ω )
RDS(on) , Drain-to-Source On Resistance ( Ω )
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Re sistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
4.9A
0
.0
0
.1
0
.2
0
.3
0
.4
0
.5
0
.6
0 102030
A
V = -4.5V
V = -10V
GS
GS
0
.00
0
.04
0
.08
0
.12
0
.16
0 3 6 9 12 15
A
I = -4.9A
D
25 50 75 100 125 150
0
50
100
150
200
250
300
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-1.3A
-2.2A
-2.8A
-VGS , Gate -to-Source Voltage (V)
-ID , Drain Current (A)
IRF7319PbF
Fig 21. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 20. Typical Capacitance Vs.
Drain-to-Source Voltage
P-Channel
Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangul ar Pulse Dur ation (sec)
Thermal R esponse (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
0
200
400
600
800
1000
1200
1400
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
C
iss
C
oss
C
rss
VGS = 0V f = 1 MHz
Ciss = Cgs + Cgd + Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
-
010 20 30 40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D-4.9A V =-15V
DS
IRF7319PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX MILLIMETERSINCHES MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C A B
e1 A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUT LINE CONF ORMS T O JEDEC OUT LINE MS -012AA.
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENS ION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSI ONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
MOLD PROTRUSI ONS NOT TO EXCEED 0.15 [.006].
8X 1.78 [.070
]
DATE CODE (YWW)
XXXX
INTERNATIONAL
RECTIFIER
LOGO
F7101
Y = LAST DIGIT OF THE YEAR
PART NUMBER
LOT CODE
WW = WEEK
EXAMPLE: THI S I S AN IRF7101 (MOSFET)
P = DE SIGNATES L EAD-F REE
PR ODUCT (OPTIONAL )
A = AS S EMBLY S ITE CODE
IRF7319PbF
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLL IN G DI M E NSI ON : MILLI ME TER.
2. OUTLINE CONFORMS T O EIA-481 & EIA-541.
FEED DIRECTION
TERM INAL NUM B ER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
N
OTES:
1
. CONTROLLING DIMENS IO N : MIL LIM ETE R.
2
. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3
. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
