2N5906 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET The 2N5906 is a high-performance monolithic dual JFET featuring tight matching and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications where tight tracking is required. The hermetically sealed TO-78 package is well suited for hi-reliability and harsh environment applications. (See Packaging Information). 2N5906 Benefits: Tight Tracking Good matching Ultra Low Leakage Low Drift ELECTRICAL CHARACTERISTICS @ 25C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. BVGSS Breakdown Voltage 40 BVGGO GateToGate Breakdown 40 TRANSCONDUCTANCE YfSS Full Conduction 70 YfS Typical Operation 50 |YFS12 / Y FS| Mismatch DRAIN CURRENT IDSS Full Conduction 60 |IDSS12 / IDSS| Mismatch at Full Conduction GATE VOLTAGE VGS(off) or Vp Pinchoff voltage 0.6 VGS(on) Operating Range GATE CURRENT IGmax. Operating IGmax. High Temperature IGSSmax. At Full Conduction IGSSmax. High Temperature IGGO GatetoGate Leakage OUTPUT CONDUCTANCE YOSS Full Conduction YOS Operating |YOS12| Differential COMMON MODE REJECTION CMR 20 log |VGS12/VDS| CMR 20 log |VGS12/VDS| NOISE NF Figure en Voltage CAPACITANCE CISS Input CRSS Reverse Transfer CDD DraintoDrain FEATURES LOW DRIFT ULTRA LOW LEAKAGE LOW PINCHOFF ABSOLUTE MAXIMUM RATINGS @ 25C (unless otherwise noted) | VGS12 / T| = 5V/C TYP. IG = 150fA TYP. Vp = 2V TYP. Maximum Temperatures Storage Temperature 65C to +150C Operating Junction Temperature +150C Maximum Voltage and Current for Each Transistor - Note 1 VGSS Gate Voltage to Drain or Source 40V VDSO Drain to Source Voltage 40V IG(f) Gate Forward Current 10mA IG Gate Reverse Current 10A Maximum Power Dissipation Device Dissipation @ Free Air - Total 40mW @ +125C MATCHING CHARACTERISTICS @ 25C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTICS VALUE UNITS CONDITIONS | VGS12 / T| max. DRIFT VS. 5 V/C VDG=10V, ID=30A TEMPERATURE TA=55C to +125C | V GS12 | max. OFFSET VOLTAGE 5 mV VDG=10V, ID=30A TYP. 60 MAX. UNITS V V CONDITIONS VDS = 0 ID=1nA IG= 1nA ID = 0 IS= 0 300 100 1 500 200 5 mho mho % VDG= 10V VDG= 10V 400 2 1000 5 A % VDG= 10V VGS= 0V 2 4.5 4 V V VDS= 10V VDS=10V ID= 1nA ID=30A 1 1 1 2 5 pA nA pA nA pA 0.1 0.01 5 0.1 0.1 mho 90 90 dB 20 1 70 dB nV/Hz 3 1.5 0.1 pF VGS= 0V ID= 30A Click To Buy Note 1 - These ratings are limiting values above which the serviceability of any semiconductor may be impaired TO-78 (Bottom View) f = 1kHz f = 1kHz VDG= 10V ID= 30A TA= +125C VDS =0V VGS= 20V TA= +125C VGG= 20V VDG= 10V VDG= 10V VGS= 0V ID=30A VDS = 10 to 20V ID=30A VDS = 5 to 10V ID=30A VDS= 10V VGS= 0V RG= 10M f= 100Hz NBW= 6Hz VDG=10V ID=30A f=10Hz NBW=1Hz VDS= 10V VGS= 0V f= 1MHz VDG = 20V ID=30A Micross Components Europe Available Packages: 2N5906 in TO-78 2N5906 available as bare die Please contact Micross for full package and die dimensions Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.