© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 5
1Publication Order Number:
2N6052/D
2N6052
Preferred Device
Darlington Complementary
Silicon Power Transistors
This package is designed for general−purpose amplifier and low
frequency switching applications.
Features
•High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc
•Collector−Emitter Sustaining Voltage — @ 100 mA
VCEO(sus) = 100 Vdc (Min)
•Monolithic Construction with Built−In Base−Emitter Shunt Resistors
•This is a Pb−Free Device*
MAXIMUM RATINGS (Note 1)
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 100 Vdc
Collector−Base Voltage VCB 100 Vdc
Emitter−Base Voltage VEB 5.0 Vdc
Collector Current −Continuous
Peak
IC12
20
Adc
Base Current IB0.2 Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD150
0.857
W
W/°C
Operating and Storage Temperature
Range
TJ, Tstg −65 to + 200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 1.17 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
160
00 25 50 75 100 125 150 200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
120
100
140
175
80
40
20
60
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
12 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTOR
100 VOLTS, 150 WATTS
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING
DIAGRAM
2N6052 = Device Code
G= Pb−Free Package
A = Location Code
YY = Year
WW = Work Week
MEX = Country of Orgin
2N6052G
AYYWW
MEX
Device Package Shipping
ORDERING INFORMATION
2N6052G TO−3
(Pb−Free)
100 Units/Tray
Preferred devices are recommended choices for future use
and best overall value.
COLLECTOR
CASE
BASE
1
EMITTER 2
21
2N6052
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2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 3) (IC = 100 mAdc, IB = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
VCEO(sus)
ÎÎÎ
ÎÎÎ
100
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current (VCE = 50 Vdc, IB = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
ICEO
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
1.0
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc)
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 150_C)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ICEX
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
0.5
5.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
2.0
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 6.0 Adc, VCE = 3.0 Vdc)
(IC = 12 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
hFE
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
750
100
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
18,000
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage
(IC = 6.0 Adc, IB = 24 mAdc)
(IC = 12 Adc, IB = 120 mAdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VCE(sat)
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
2.0
3.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter Saturation Voltage (IC = 12 Adc, IB = 120 mAdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(sat)
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
4.0
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage (IC = 6.0 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(on)
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
2.8
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Magnitude of Common Emitter Small−Signal Short Circuit Forward
Current Transfer Ratio (IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
|hfe|
ÎÎÎ
ÎÎÎ
4.0
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
Cob
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
500
ÎÎÎ
ÎÎÎ
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small−Signal Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
hfe
ÎÎÎ
ÎÎÎ
300
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
−
2. Indicates JEDEC Registered Data.
3. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Figure 2. Switching Times Test Circuit
10
0.2
Figure 3. Switching Times
IC, COLLECTOR CURRENT (AMP)
t, TIME (s)μ
5.0
0.1
0.5 1.0 3.0 20
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
1.0
2.0
2N6052
2N6059
tf
tr
ts
td @ VBE(off) = 0
V2
approx
+8.0 V
V1
approx
-8.0 V
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
25 ms
0
RB
51 D1
+4.0 V
VCC
-30 V
RC
TUT
≈ 5.0 k ≈ 50
SCOPE
for td and tr, D1 is disconnected
and V2 = 0
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
0.5
0.2
5.0 10
For NPN test circuit reverse diode and voltage polarities.
2N6052
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3
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.5
0.2
0.1
0.05
0.02
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500
RqJC(t) = r(t) RqJC
RqJC = 1.17°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE
PULSE
0.1
0.7
0.3
0.07
0.03
0.02 0.03 0.3 3.0 30 300
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5, and 6 is based on TJ(pk) = 200_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
TJ(pk) v 200_C; TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 5.
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
50
10
20
10
5.0
2.0
0.05 50 10070
IC, COLLECTOR CURRENT (AMP)
1.0
0.5
0.1
0.2
20 30
0.1 ms
0.5 ms
TJ = 200°C
1.0 ms
5.0 ms
d
c
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION
@TC = 25°C (SINGLE PULSE)
ACTIVE−REGION SAFE OPERATING AREA
500
0.1
Figure 6. Small−Signal Current Gain
VR, REVERSE VOLTAGE (VOLTS)
50
1.0 2.0 1005.00.2 0.5
C, CAPACITANCE (pF)
300
100
70
TJ = 25°C
Cib
200
Cob
3000
1.0
Figure 7. Capacitance
f, FREQUENCY (kHz)
30 2.0 5.0 20 50 100010010 10 20 50
hfe, SMALL-SIGNAL CURRENT GAIN
2000
1000
500
200
100
50
200 500
TC = 25°C
VCE = 3.0 V
IC = 5.0 A
2N6052
http://onsemi.com
4
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
20,000
0.2
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
200 0.3 0.5 1.0 2.0 20
hFE, DC CURRENT GAIN
10
Figure 9. Collector Saturation Region
3.0
0.5
IB, BASE CURRENT (mA)
1.0 1.0 2.0 10 50
1.8
IC = 3.0 A
TJ = 25°C
6.0 A
2.2
2.6
5.0
3.0
0.2
IC, COLLECTOR CURRENT (AMP)
0.3 0.5 1.0 3.0 20
2.5
2.0
1.5
1.0
0.5
TJ = 25°C
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
V, VOLTAGE (VOLTS)
Figure 10. “On” Voltages
VBE @ VCE = 3.0 V
2.0
10,000
TJ = 150°C
25°C
-55°C
20
1.4
9.0 A
5000
3000
2000
1000
500
300
3.0 5.0
VCE = 3.0 V
3.0
105.0
30
12 A
2N6052
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5
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.550 REF 39.37 REF
B--- 1.050 --- 26.67
C0.250 0.335 6.35 8.51
D0.038 0.043 0.97 1.09
E0.055 0.070 1.40 1.77
G0.430 BSC 10.92 BSC
H0.215 BSC 5.46 BSC
K0.440 0.480 11.18 12.19
L0.665 BSC 16.89 BSC
N--- 0.830 --- 21.08
Q0.151 0.165 3.84 4.19
U1.187 BSC 30.15 BSC
V0.131 0.188 3.33 4.77
A
N
E
C
K
−T−SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005) Y M
T
M
Y
M
0.13 (0.005) T
−Q−
−Y−
2
1
U
L
GB
V
H
TO−204 (TO−3)
CASE 1−07
ISSUE Z
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
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