om. : 1775470 -C O D I SEMICONDUCTOR INC 80D 00603 D T-o/-/S. C0 D I SEMICONDUCTOR INC 40 pe ar7su70 QOOOObO9 4 I ital] CODI Semiconductor, Inc. PreToTo lett High Current Plastic Silicon Rectifiers 1N5400 thru 1N5408 VOLTAGE RANGE 50 to 1000 PRV _ CURRENT 3.0A at 105C 1.5A at 140C FEATURES @ High surge current capability @ Plastic Package has Underwriters Laboratory Flammability Classification DO-201-AD 94V-0 Utilizing Flame Retardant Epoxy Molding Compound e Void - free plastic in a DO-201 -AD package | 082 (+321) @ High current operation 3.0 ampere @ T, = 105C 1.00 048 \'1.219 Exceeds environmental standards of MIL-STD-19500/228 on 4 (2228 ) 375 MECHANICAL DATA rasenes E I _-| Le: 210 ( Sas OF: Molded Plastic 4.826 Terminals Axial leads, solderable per MIL-STD-202, Method 208 25-40) DIA Polarity... 0... cc ccc cece cree eee eens Color band denotes cathods MIN Mounting Position... 0.0... cece ne er eee rete sees ens eneens Any Weight... 0... ccc ce cc eee eee cece nent evernp rene 0.04 ounces Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS * @T,=25C unless otherwise specified. Single phase, half-wave, GOHz, resistive or inductive load. ** All values except Maximum RMS Voltage are registered JEDEC parameters, ; 1N5400/1N540111N5402]1N5403/1N5404)1N5405/1N5406]1N5407/1N5408| UNITS Maximum Recurrent Peak Reverse Voitage 50 100 200 300 400 500 600 800 1000 Vv Maximum RMS Voltage 35 70 140 210 280 350 420 560 700 Vv Maximum DC Blocking Voltage to 150C Max. 50 100 200 300 400 500 600 800 1000 Vv Maximum Average Forward al 105C 3.0 A Rectified Current 140C 1.5 A Maximum Overload Surge Current at 1 cycle 200 ; A Maximum Forward Voltage at 3.0 ADC ; 1,2 Poy Maximum Full Load Reverse Current Full Cycte Average at 105C 05 mADG Maximum DC Reverse Current at Rated DC Blocking Voltage and 150C 0.5 mADC Operating Temperature Range 65 to +170 C Storage Temperature Range 65 to +175 C 1775470 C O D I SEMICONDUCTOR INC 90D 00604 D J-o/ /S7 CO DI SEMICONDUCTOR INC qo pe ja77sy70 oooonoy o CODI Semiconductor, Inc. RATING AND CHARACTERISTIC CURVES 1N5400 thru) 1N5408 Fig. 1-Typical Reverse Characteristics lo INSTANTANEDOUS REVERSE CURRENT: A 20 40 660 gO 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE Fig. 3-Capacitance Characteristics b a ui uf TYPICAL a Ee 9 100 it < oO z 9S e oO z > : 10 to to too REVERSE JUNCTION POTENTIAL, VOLTS (APPLIED V+0.7 VOLTS) NOTE: WHEN PLOTTING CAPACITANCE VERSUS VOLTAGE, IT IS CONVENIENT TO PLOT ON LOG-LOG PAPER AND TO PLOT APPLIEO VOLTAGE PLUS BARRIER POTENTIAL (BARRIER POTENTIAL = 0.7 VOLTS) AS THE ASSCISCA. THIS WILL GIVE A STRAIGHT LINE OF SLOPE APPROXIMATELY 1/2 OF WHICH CAN BE EASILY_ EXTRAPOLATED, CAPACITANCE AT ZERO APPLIED VOLTS 'S FOUND AT 0.7 VOLTS ON THE PLOT. THIS TECHNIQUE WAS USED FOR THE CURVE SHOWN. AVERAGE FWD CURRENT (1 9)~ AMP, 40 Fig. 2Forward Derating Curve 30 20 \ 0.5 LOAD LENGTH FORWARD SURGE CURRENT, Apk (HALF SINE-WAVE) 50 75 100 125 150 '75 200 AMBIENT TEMPERATURE (T,)~*C FIG. 4- Typical Forward Characteristics 10 10 0.1 MAXIMUM FORWARD CURRENT ~ | rm(Apk) Ot 0, 0. oo 1 MAXIMUM FORWARD VOLTAGE~Vem (Vpk) 1.2 Fig. 5-Maximum Overload Surge Current 80 MN Ta= 10590 40 eee 1 2 6 10 20 40 60 100 See