MJD122-1 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

 

 

DPAK For Surface Mount Applications

Designed for general purpose amplifier and low speed switching applications.

•Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

•Straight Lead Version in Plastic Sleeves (“–1” Suffix)

•Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix)

•Surface Mount Replacements for 2N6040–2N6045 Series, TIP120–TIP122

Series, and TIP125–TIP127 Series

•Monolithic Construction With Built–in Base–Emitter Shunt Resistors

•High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc

•Complementary Pairs Simplifies Designs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

MJD122

MJD127

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎ

120

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎ

0.16

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation* @ TA = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎ

1.75

0.014

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

6.25

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient*

ÎÎÎÎ

RθJA

ÎÎÎÎÎÎ

71.4

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage

(IC = 30 mAdc, IB = 0)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

100

ÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 50 Vdc, IB = 0)

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎ

µAdc

*These ratings are applicable when surface mounted on the minimum pad sizes recommended.

(continued)

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJD122/D

 Motorola, Inc. 1995





CASE 369A–13

SILICON

POWER TRANSISTORS

8 AMPERES

100 VOLTS

20 WATTS

*Motorola Preferred Device

CASE 369–07

MINIMUM PAD SIZES

RECOMMENDED FOR

SURFACE MOUNTED

APPLICATIONS

0.243

6.172

0.063

1.6

0.118

3.0

0.07

1.8 0.165

4.191

0.190

4.826

inches





 

REV 1

 

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS — continued (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS — continued

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 125

ÎÎÎÎÎ

ICEX

ÎÎÎÎÎ

—

ÎÎÎÎ

500

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

ÎÎÎÎÎ

ICBO

ÎÎÎÎÎ

—

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎÎÎ

—

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 4 Adc, VCE = 4 Vdc)

(IC = 8 Adc, VCE = 4 Vdc)

ÎÎÎÎÎ

hFE

ÎÎÎÎÎ

1000

100

ÎÎÎÎ

12,000

—

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 4 Adc, IB = 16 mAdc)

(IC = 8 Adc, IB = 80 mAdc)

ÎÎÎÎÎ

VCE(sat)

ÎÎÎÎÎ

—

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage (1)

(IC = 8 Adc, IB = 80 mAdc)

ÎÎÎÎÎ

VBE(sat)

ÎÎÎÎÎ

—

ÎÎÎÎ

4.5

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 4 Adc, VCE = 4 Vdc)

ÎÎÎÎÎ

VBE(on)

ÎÎÎÎÎ

—

ÎÎÎÎ

2.8

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain–Bandwidth Product

(IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz)

ÎÎÎÎÎ

|hfe|

ÎÎÎÎÎ

ÎÎÎÎ

—

ÎÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD127

MJD122

ÎÎÎÎÎ

Cob

ÎÎÎÎÎ

—

ÎÎÎÎ

300

200

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 3 Adc, VCE = 4 Vdc, f = 1 kHz)

ÎÎÎÎÎ

hfe

ÎÎÎÎÎ

300

ÎÎÎÎ

—

ÎÎÎÎ

—

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2%.

Figure 1. Power Derating

25 T, TEMPERATURE (

050 75 100 125 150

PD, POWER DISSIPATION (WATTS)

2.5

1.5

0.5

TATC

SURFACE

MOUNT

 

Motorola Bipolar Power Transistor Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (AMP)

500

0.2

5000

2000

10,000

hFE, DC CURRENT GAIN

0.1 0.7

3000

0.5 1

20,000

1000

2 3 5

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

0.3 0.5 1 73 52

IC, COLLECTOR CURRENT (AMP)

1.5

V, VOLTAGE (VOLTS)

2.5

0.5 0.2 30.1 0.70.3 1 5

10 20 30

200

300

0.3 7 10

0.7

0.5 7

210

PNP MJD127 NPN MJD122

IC, COLLECTOR CURRENT (AMP)

500

0.2

5000

2000

10,000

hFE, DC CURRENT GAIN

VCE = 4 V

TJ = 150

7000

0.1 0.7

–55

3000

0.5 1

20,000

700

1000

2 3 5

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

0.3 0.5 1 73 5

4 A

IC = 2 A

TJ = 25

IC, COLLECTOR CURRENT (AMP)

1.5

V, VOLTAGE (VOLTS)

2.5

0.5

TJ = 25

VBE(sat) @ IC/IB = 250

VBE @ VCE = 4 V

VCE(sat) @ IC/IB = 250

0.2 30.1 0.70.3 1 5

10 20 30

Figure 2. DC Current Gain

Figure 3. Collector Saturation Region

Figure 4. “On” Voltages

200

300

0.3 7 10

0.7

0.5 7

210

6 A

VCE = 4 V

TJ = 150

–55

TJ = 25

4 A

IC = 2 A 6 A

TJ = 25

VBE @ VCE = 4 V

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

TYPICAL ELECTRICAL CHARACTERISTICS

 

4 Motorola Bipolar Power Transistor Device Data

V, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

IC, COLLECTOR CURRENT (AMP)

0.2

*IC/IB

≤

hFE/3

0.1

–55

C to 25

1 2 3 10

104

VBE, BASE–EMITTER VOLTAGE (VOLTS)

10–1 0+0.4

, COLLECTOR CURRENT ( A)

103

102

101

100

–0.2 –0.4 –0.6

TJ = 150

100

REVERSE FORWARD

VCE = 30 V

105

+0.6 +0.2 –0.8 –1 –1.2 –1.4

104

VBE, BASE–EMITTER VOLTAGE (VOLTS)

10–1

, COLLECTOR CURRENT ( A)

103

102

101

100

105

–5

VB for VBE 25

C to 150

VC for VCE(sat)

Figure 5. Temperature Coefficients

VR, REVERSE VOLTAGE (VOLTS)

Cib

30 1 5 20 100

TJ = 25

300

100

0.1 2 10 50

PNP

NPN

0.50.2

Figure 6. Collector Cut–Off Region

Figure 7. Small–Signal Current Gain

1f, FREQUENCY (kHz)

100

2 10

500

5000

TC = 25

VCE = 4 Vdc

IC = 3 Adc

3000

5 5020 100

10,000

200

300

200 500 1000

PNP MJD127 NPN MJD122

–4

–3

–2

–1

0.50.3 75 IC, COLLECTOR CURRENT (AMP)

0.20.1 1 2 30.50.3 75

2000

1000

30 PNP

NPN

200

Figure 8. Capacitance

V, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

–5

–4

–3

–2

–1

0.7 10

0–0.4 +0.2 +0.4 +0.6–0.6 –0.2 +0.8 +1 +1.2 +1.4

hfe, SMALL–SIGNAL CURRENT GAIN

C, CAPACITANCE (pF)

–55

C to 25

C to 150

*IC/IB

≤

hFE/3

C to 150

–55

C to 25

C to 150

C–55

C to 25

VC for VCE(sat)

VB for VBE

REVERSE FORWARD

VCE = 30 V

TJ = 150

100

Cob

TYPICAL ELECTRICAL CHARACTERISTICS

 

Motorola Bipolar Power Transistor Device Data

t, TIME OR PULSE WIDTH (ms)

0.01 1000

0.3

0.2

0.07

r(t), EFFECTIVE TRANSIENT

JC(t) = r(t) R

JC = 6.25

C/W

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk)

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

0.01

THERMAL RESISTANCE (NORMALIZED)

0.7

0.5

0.1

0.05

0.03

0.02

0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500

0.2

SINGLE PULSE

D = 0.5

0.05

0.1 0.5 30.3

0.2 0.7 1

IC, COLLECTOR CURRENT (AMP)

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25

t, TIME ( s)

0.7

0.5

0.3

0.2

td @ VBE(off) = 0 V

PNP

NPN

Figure 9. Switching Times Test Circuit Figure 10. Switching Times

0.1

10752

Figure 11. Thermal Response

APPROX

+8 V 0

≈

8 k

SCOPE

VCC

–30 V

FOR td AND tr, D1 IS DISCONNECTED

AND V2 = 0

FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.

tr, tf

≤

10 ns

DUTY CYCLE = 1%

+ 4 V

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB

≈

100 mA

MSD6100 USED BELOW IB

≈

100 mA

APPROX

–12 V

TUT

≈

120

0.07

0.05

0.1

0.01

IC, COLLECTOR CURRENT (AMP)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.3

100

0.5

0.2 BONDING WIRE LIMIT

THERMAL LIMIT

TC = 25

C (SINGLE PULSE)

SECOND BREAKDOWN LIMIT

10 507

TJ = 150

100

1 ms

0.1

3020 70

CURVES APPLY BELOW RATED VCEO

5 ms

Figure 12. Maximum Forward Bias

Safe Operating rea

321

0.05

0.02

0.03

500

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 12 is based on TJ(pk) = 150

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

< 150

C. TJ(pk) may be calculated from the data in Fig-

ure 11. At high case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the

limitations imposed by second breakdown.

 

6 Motorola Bipolar Power Transistor Device Data

Figure 13. Darlington Schematic

BASE

EMITTER

COLLECTOR

≈

8 k

≈

120

PNP

BASE

EMITTER

COLLECTOR

≈

8 k

≈

120

NPN

 

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 369A–13

ISSUE W

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

123

–T–

SEATING

PLANE

GD3 PL

0.13 (0.005) T

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.250 5.97 6.35

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.033 0.040 0.84 1.01

F0.037 0.047 0.94 1.19

G0.090 BSC 2.29 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.350 0.380 8.89 9.65

R0.175 0.215 4.45 5.46

S0.050 0.090 1.27 2.28

V0.030 0.050 0.77 1.27

CASE 369–07

ISSUE K

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

2 PL

0.13 (0.005) T

–T–

SEATING

PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.250 5.97 6.35

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.033 0.040 0.84 1.01

F0.037 0.047 0.94 1.19

G0.180 BSC 4.58 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.102 0.114 2.60 2.89

L0.090 BSC 2.29 BSC

R0.175 0.215 4.45 5.46

S0.020 0.050 0.51 1.27

U0.020 ––– 0.51 –––

V0.030 0.050 0.77 1.27

Z0.138 ––– 3.51 –––

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

1 2 3

 

8 Motorola Bipolar Power Transistor Device Data

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MJD122/D

*MJD122/D*

◊