Continental Device India Limited Data Sheet Page 1 of 3
TIP29, 29A, 29B, 29C NPN PLASTIC POWER TRANSISTORS
TIP30, 30A, 30B, 30C PNP PLASTIC POWER TRANSISTORS
General Purpose Amplifier and Switching Applications
ABSOLUTE MAXIMUM RATINGS 29 29A 29B 29C
30 30A 30B 30C
Collector-base voltage (open emitter) VCBO max. 40 60 80 100 V
Collector-emitter voltage (open base) VCEO max. 40 60 80 100 V
Collector current ICmax. 1.0 A
Total power dissipation up to TC = 25°C Ptot max. 30 W
Junction temperature Tjmax. 150 °C
Collector-emitter saturation voltage
IC = 1 A; IB = 125 mA VCEsat max. 0.7 V
D.C. current gain
IC = 1 A; VCE = 4 V hFE min. 15
max. 75
RATINGS (at TA=25°C unless otherwise specified)
Limiting values 29 29A 29B 29C
30 30A 30B 30C
Collector-base voltage (open emitter) VCBO max. 40 60 80 100 V
Collector-emitter voltage (open base) VCEO max. 40 60 80 100 V
TIP29, TIP29A, TIP29B, TIP29C
TIP30, TIP30A, TIP30B, TIP30C
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
B
123
J
M
G
D
H
A
O
O
K
N
L
FE
C
DIM MIN. MAX.
All dim insions in m m .
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
ODEG 7
123
4
IS / IECQ C 700000
IS / IECQ C 750100
IS/IS O 9002
Lic# QSC/L- 000019 .2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-220 Plastic Package
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Boca Semiconductor Corp. BSC
Continental Device India Limited Data Sheet Page 2 of 3
Emitter-base voltage (open collector) VEBO max. 5.0 V
Collector current ICmax. 1.0 A
Collector current (Peak) ICM max. 3.0 A
Base current IBmax. 0.4 A
Total power dissipation upto TC=25°C Ptot max. 30 W
Derate above 25°C max. 0.24
W/
°
C
Total power dissipation upto TA=25°C Ptot max. 2 W
Derate above 25°C max. 0.016
W/
°
C
Junction temperature Tjmax. 150 °C
Storage temperature Tstg –65 to +150
ºC
THERMAL RESISTANCE
From junction to ambient Rth j–a 62.5 °
C/W
From junction to case Rth j–c 4.167 °
C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified 29 29A 29B 29C
30 30A 30B 30C
Collector cutoff current
IB = 0; VCE = 30V ICEO max. 0.3 0.3 – – mA
IB = 0; VCE = 60V ICEO max. – – 0.3 0.3 mA
VEB = 0; VCE = V CEO ICES max. 0.2 mA
Emitter cut-off current
IC = 0; VEB = 5 V IEBO max. 1.0 mA
Breakdown voltages
IC = 30 mA; IB = 0 VCEO(sus)* min. 40 60 80 100 V
IC = 1 mA; IE = 0 VCBO min. 40 60 80 100 V
IE = 1 mA; IC = 0 VEBO min. 5.0 V
Saturation voltages
IC = 1 A; IB = 125 mA VCEsat* max. 0.7 V
Base emitter on voltage
IC = 1 A; VCE = 4 V VBE(on)* max. 1.3 V
D.C. current gain
IC = 0.2 A; VCE = 4 V hFE* min. 40
IC = 1 A; VCE = 4 V hFE* min. 15
max. 75
Small-signal current gain
IC = 0.2A; VCE = 10V; f = 1 KHz hfe min. 20
Transition frequency
IC = 0.2A; VCE = 10V; f = 1 MHz fT (2) min. 3 MHz
* Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%.
(2) fT = |hfe |• ftest.
TIP29, TIP29A, TIP29B, TIP29C
TIP30, TIP30A, TIP30B, TIP30C
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