M29W640GST70ZF6E - Numonyx - Datasheet.Directory

October 2009 Rev 11 1/90

M29W640GH M29W640GL

M29W640GT M29W640GB

64-Mbit (8 Mbit x8 or 4 Mbit x16, uniform block or boot block)

3 V supply flash memory

Feature

Supply voltage

–V

CC = 2.7 to 3.6 V for program/erase/read

–V

PP =12 V for fast program (optional)

Asynchronous random/page read

– Page width: 4 words

– Page access: 25 ns

– Random access: 60 ns, 70 ns, 90 ns

Fast program commands

– 2-word/4-byte program (without VPP=12 V)

– 4-word/8-byte program (with VPP=12 V)

– 16-word/32-byte write buffer

Programming time

–10 μs per byte/word typical

– Chip program time: 10 s (4-word program)

Memory organization

– M29W640GH/L:

128 main blocks, 64 Kbytes each

– M29W640GT/B

Eight 8-Kbyte boot blocks (top or bottom)

127 main blocks, 64 Kbytes each

Program/erase controller

– Embedded byte/word program algorithms

Program/erase suspend and resume

– Read from any block during program

suspend

– Read and program another block during

erase suspend

RoHS compliant packages

128-word extended memory block

Low power consumption:standby and

automatic standby

Unlock Bypass Program command

– Faster production/batch programming

Common flash interface: 64-bit security code

VPP/WP pin for fast program and write protect

Temporary block unprotection mode

100,000 program/erase cycles per block

Electronic signature

– Manufacturer code: 0020h

– Device code (see Table 1)

Automotive Certified Parts Available

FBGA

BGA

TSOP56 (NB)

14 x 20 mm(1)

TBGA64 (ZF)

10 x 13 mm(1)

TSOP48 (NA)

12 x 20 mm

TFBGA48 (ZA)

6x8mm

FBGA

1. Packages only available upon request.

FBGA64 (ZS)

11 x 1 3 mm

Tabl e 1. Device summ ary

Root part number Device code

M29W640GH: uniform, last block protected by VPP/WP 227Eh + 220Ch + 2201h

M29W640GL: uniform, first block protected by VPP/WP 227Eh + 220Ch + 2200h

M29W640GT: top boot blocks 227Eh + 2210h + 2201h

M29W640GB: bottom boot blocks 227Eh + 2210h + 2200h

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Contents M29 W640G H, M29 W640GL, M2 9W640 GT , M29W 640GB
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Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
1 Address Inputs (A0-A21)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
2 Data Inputs/Outputs (DQ0-DQ7)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
3 Data Inputs/Outputs (DQ8-DQ14)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
4 Data Input/Output or Address Input (DQ15A–1)   . . . . . . . . . . . . . . . . . . .  14
5 Chip Enable (E)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
6 Output Enable (G)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
7 Write Enable (W)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  15
8 VPP/Write Protect (VPP/WP)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  15
9 Reset/Block Temporary Unprotect (RP)  . . . . . . . . . . . . . . . . . . . . . . . . . .  17
10 Ready/Busy Output (RB)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  17
11 Byte/Word Organization Select (BYTE)  . . . . . . . . . . . . . . . . . . . . . . . . . .  17
12 VCC supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  18
13 VSS ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  18
Bus operations  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
1 Bus read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  19
2 Bus write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  19
3 Output disable   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  19
4 Standby   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  19
5 Automatic standby  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  20
6 Special bus operations  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  20
6.1 Electronic signature  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6.2 Block protect and chip unprotect  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Command interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
1 Standard commands   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  23
1.1 Read/Reset command  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
1.2 Auto Select command  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
1.3 Read CFI Query command  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

M29 W640G H, M29W 640GL, M29 W640 GT , M29W 640GB Co n tent s
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1.4 Chip Erase command   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
1.5 Block Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
1.6 Erase Suspend command  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
1.7 Erase Resume command   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
1.8 Program Suspend command  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
1.9 Program Resume command  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
1.10 Program command   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
2 Fast program commands  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  28
2.1 Double Byte Program command  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
2.2 Quadruple Byte Program command   . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
2.3 Octuple Byte Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
2.4 Double Word Program command   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
2.5 Quadruple Word Program command  . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
2.6 Unlock Bypass command   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
2.7 Unlock Bypass Program command  . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
2.8 Unlock Bypass Reset command  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
2.9 Write to Buffer and Program command  . . . . . . . . . . . . . . . . . . . . . . . . . 31
2.10 Write to Buffer and Program Confirm command  . . . . . . . . . . . . . . . . . . 32
2.11 Write to Buffer and Program Abort and Reset command   . . . . . . . . . . . 32
3 Block protection commands  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  32
3.1 Enter Extended Block command  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.2 Exit Extended Block command   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.3 Block Protect and Chip Unprotect commands  . . . . . . . . . . . . . . . . . . . . 33
Status register  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
1 Data polling bit (DQ7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  40
2 Toggle bit (DQ6)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  40
3 Error bit (DQ5)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  41
4 Erase timer bit (DQ3)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  41
5 Alternative toggle bit (DQ2)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  41
6 Write to buffer and program abort bit (DQ1) . . . . . . . . . . . . . . . . . . . . . . .  41
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
DC and AC parameters  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56

Contents M29 W640G H, M29 W640GL, M2 9W640 GT , M29W 640GB

4/90

9 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61

Appendix A Block addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62

Appendix B Common flash interface (CFI). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75

Appendix C Extended memory block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80

C.1 Factory locked extended block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80

C.2 Customer lockable extended block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80

Appendix D Block protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82

D.1 Programmer technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82

D.2 In-system technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82

Appendix E Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88

10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89

M29 W640G H, M29W640GL, M29W6 40GT,  M 29W64 0GB List of tables
 5/90
List of tables
Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table 2. Signal names  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 3. Protection granularity on the M29W640GH and M29W640GL. . . . . . . . . . . . . . . . . . . . . . . 9
Table 4. Protection granularity on the M29W640GT  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 5. Protection granularity on the M29W640GB  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 6. Hardware protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 7. Bus operations, BYTE = VIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Table 8. Bus operations, BYTE = VIH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 9. Read electronic signature addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 10. Commands, 16-bit mode, BYTE = VIH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Table 11. Commands, 8-bit mode, BYTE = VIL. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Table 12. Program, erase times and endurance cycles . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Table 13. Status register bits  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Table 14. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Table 15. Operating and AC measurement conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Table 16. Device capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Table 17. DC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Table 18. Read AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Table 19. Write AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Table 20. Reset/Block Temporary Unprotect AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Table 21. Data polling and data toggle AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Table 22. TSOP48 – 48 lead plastic thin small outline, 12 x 20 mm, package mechanical data . . . . 56
Table 23. TSOP56 – 56 lead plastic thin small outline, 14 x 20 mm, package mechanical data . . . . 57
Table 24. TFBGA48 6 x 8 mm - 6 x 8 active ball array, 0.8 mm pitch, package mechanical data . . . 58
Table 25. TBGA64 10 x 13 mm - 8 x 8 active ball array, 1 mm pitch, package mechanical data. . . . 59
Table 26. FBGA64 11 x 13 mm—8 x 8 active ball array, 1 mm pitch, package mechanical data  . . . 60
Table 27. Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Table 28. M29W640GH and M29W640GL block addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Table 29. Top boot block addresses, M29W640GT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
Table 30. Bottom boot block addresses, M29W640GB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Table 31. Query structure overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
Table 32. CFI query identification string . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
Table 33. CFI query system interface information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Table 34.  Device geometry definition  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
Table 35. Primary algorithm-specific extended query table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
Table 36. Security code area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Table 37. Extended block address and data  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Table 38. Programmer technique bus operations, BYTE = VIH or VIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .83
Table 39. Document revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89

List o f figu res M29 W640G H, M29 W640G L , M29W6 40GT,  M 29W64 0GB
6/90   
List of figures
Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Figure 2. TSOP48 connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 3. TSOP56 connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 4. TFBGA48 connections (top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 5. TBGA64 connections (top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 6. Write enable controlled program waveforms (8-bit mode) . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 7. Chip enable controlled program waveforms (8-bit mode). . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 8. Chip/block erase waveforms (8-bit mode)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 9. Data polling flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 10. Data toggle flowchart  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Figure 11. AC measurement I/O waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Figure 12. AC measurement load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Figure 13. Read mode AC waveforms (8-bit mode)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Figure 14. Page read AC waveforms (8-bit mode)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Figure 15. Write AC waveforms, write enable controlled (8-bit mode). . . . . . . . . . . . . . . . . . . . . . . . . 50
Figure 16. Write AC waveforms, chip enable controlled (8-bit mode) . . . . . . . . . . . . . . . . . . . . . . . . . 51
Figure 17. Reset/Block Temporary Unprotect AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Figure 18. Accelerated program timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Figure 19. Data polling AC waveforms  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Figure 20. Toggle/alternative toggle bit polling AC waveforms (8-bit mode) . . . . . . . . . . . . . . . . . . . . 54
Figure 21. TSOP48 –48 lead plastic thin small outline, 12 x 20 mm, package outline, top view   . . . . 56
Figure 22. TSOP56 – 56 lead plastic thin small outline, 14 x 20 mm package outline, top view . . . . . 57
Figure 23. TFBGA48 6 x 8 mm-6 x 8 active ball array, 0.8 mm pitch, package outline, bottom view  . 58
Figure 24. TBGA64 10 x 13 mm-8 x 8 active ball array, 1 mm pitch, package outline, bottom view . . 59
Figure 25. FBGA64 11 x 13 mm - 8 x 8 active ball array, 1 mm pitch, package outline, bottom view . 60
Figure 26. Programmer equipment group protect flowchart  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
Figure 27. Programmer equipment chip unprotect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Figure 28. In-system equipment group protect flowchart. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
Figure 29. In-system equipment chip unprotect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
Figure 30. Write to Buffer and Program flowchart and pseudocode  . . . . . . . . . . . . . . . . . . . . . . . . . . 88

M29 W640G H, M29W640GL, M29W6 40GT, M 29W64 0GB Descrip tion

7/90

1 Description

The M29W640G is a 64-Mbit (8 Mbit x8 or 4 Mbit x16) non-volatile memory that can be

read, erased and reprogrammed. These operations can be performed using a single low

voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its read mode.

The memory is divided into blocks that can be erased independently so it is possible to

preserve valid data while old data is erased. Program and erase commands are written to

the command interface of the memory. An on-chip program/erase controller simplifies the

process of programming or erasing the memory by taking care of all of the special

operations that are required to update the memory contents. The end of a program or erase

operation can be detected and any error conditions identified. The command set required to

control the memory is consistent with JEDEC standards.

The M29W640GH and M29W640GL memory array is organized into 128 uniform blocks of

64 Kbytes each (or 32 Kwords each).

The M29W640GT and M29W640GB feature an asymmetric block architecture. The devices

have an array of 135 blocks, divided into 8 parameter blocks of 8 Kbytes each (or 4 Kwords

each), and 127 main blocks of 64 Kbytes each (or 32 Kwords each). The M29W640GT has

the parameter blocks at the top of the memory address space while the M29W640GB

locates the parameter blocks starting from the bottom.

Blocks are protected by groups to prevent accidental program or erase commands from

modifying the memory.

Table 3, describes the protection granularity on the M29W640GH and M29W640GL.

Table 4, and Table 5. describe the protection granularity on the M29W640GT and

M29W640GB.

The M29W640G support asynchronous random read and page read from all blocks of the

memory array.

Chip Enable, Output Enable and Write Enable signals control the bus operation of the

memory. They allow simple connection to most microprocessors, often without additional

logic.

The VPP/WP signal is used to enable faster programming of the device. Protection from

program/erase operation can be obtained by holding VPP/WP to VSS:

On the M29W640GH and M29W640GL, the last and the first block is protected,

respectively.

On the M29W640GT and M29W640GB, the last two and the first two boot blocks are

protected.

The devices feature a full set of fast program commands to improve the programming

throughput:

2-byte program: it is not necessary to raise VPP/WP to 12 V before issuing this

command

2-words/4-byte program: it is not necessary to raise VPP/WP to 12 V before issuing this

command.

4-word/8-byte program: VPP/WP must be raised to 12 V before issuing this command.

write to buffer and program, allowing to program in one shot a buffer of 16 words/32

bytes.

Descript ion M29 W640G H, M29 W640GL, M2 9W640 GT , M29W 640GB

8/90

The M29W640G has an extra block, the extended block, of 128 words in x16 mode or of

256 bytes in x8 mode that can be accessed using a dedicated command. The extended

block can be protected and so is useful for storing security information. However the

protection is not reversible, once protected the protection cannot be undone.

The M29W640GT, M29W640GB, M29W640GH and M29W640GL, are offered in TSOP48

(12 x 20 mm), TSOP56 (14 x 20 mm), TFBGA48 (6 x 8 mm, 0.8 mm pitch), and TBGA64

(10 x 13 mm, 1 mm pitch) packages.

The memory is delivered with all the bits erased (set to ‘1’).

Figure 1. Logic dia gram

ai13694

A0-A21

DQ0-DQ1

VCC

M29W640GT

M29W640GB

M29W640GH

M29W640GL

VSS

DQ15A–1

BYTE

VPP/WP

Table 2. Signal names(1)

Name Description Direction

A0-A21 Address Inputs Inputs

DQ0-DQ7 Data Inputs/Outputs Inputs/Outputs

DQ8-DQ14 Data Inputs/Outputs Inputs/Outputs

DQ15A–1 (or DQ15) Data Input/Output or Address Input (or Data Input/Output) Inputs/Outputs

EChip Enable Input

GOutput Enable Input

WWrite Enable Input

RP Reset/Block Temporary Unprotect Input

RB Ready/Busy Output

BYTE Byte/Word Organization Select Input

VCC Supply voltage Supply voltage

VPP/WP Supply voltage for fast program (optional) or write protect Supply voltage

VSS Ground –

NC Not connected internally –

1. VPP/WP may be left floating since it is internally connected to an pull-up resistor to enable program/erase operations,

M29 W640G H, M29W640GL, M29W6 40GT, M 29W64 0GB Descrip tion

9/90

Table 3. P ro tec ti o n g ran ula rity on the M29W64 0GH and M29W640GL

Block Kbytes/Kwords Protection block group (x8) (x16)

0 to 3 4 x 64/32 Block level 000000h–03FFFFh(1) 000000h–01FFFFh(1)

4 to 7 4 x 64/32 Protection group 040000h–07FFFFh 020000h–03FFFFh

-- -- -- -- --

120 to 123 4 x 64/32 Protection group 780000h–7BFFFFh 3C0000h–3DFFFFh

124 to 127 4x 64/32 Block level 7C0000h–7FFFFFh 3E0000h–3FFFFFh

1. Used as the extended block addresses in extended block mode.

Table 4 . Pro tec tion gran ula r i ty o n th e M29W640GT

Block Kbytes/Kwords Protection block group (x8) (x16)

0 to 3 4 x 64/32 Protection group 000000h–03FFFFh(1) 000000h–01FFFFh(1)

4 to 7 4 x 64/32 Protection group 040000h–07FFFFh 020000h–03FFFFh

-- -- -- -- --

120 to 123 4 x 64/32 Protection group 780000h–7BFFFFh 3C0000h–3DFFFFh

124 to 126 3 x 64/32 Protection group 7C0000h–7EFFFFh 3E0000h–3F7FFFh

127 to 134 8x 8/4(2) Block level 7F0000h–7FFFFFh 3F8000h–3FFFFFh

1. Used as the extended block addresses in extended block mode.

2. Boot blocks.

Table 5. P ro tec ti o n g ran ula r i ty o n th e M29W640GB

Block Kbytes/Kwords Protection Block Group (x8) (x16)

0 to 7 8x 8/4(1) Block level 000000h–00FFFFh(2) 000000h–007FFFh(2)

8 to 10 3 x 64/32 Protection Group 010000h-03FFFFh 008000h-01FFFFh

11 to 14 4 x 64/32 Protection Group 040000h-07FFFFh 020000h-03FFFFh

-- -- -- -- --

127 to 130 4 x 64/32 Protection Group 780000h-7BFFFFh 3C0000h-3DFFFFh

131 to 134 4 x 64/32 Protection Group 7C0000h–7FFFFFh 3E0000h–3FFFFFh

1. Boot blocks.

2. Used as the extended block addresses in extended block mode.

Descript ion M29 W640G H, M29 W640GL, M2 9W640 GT , M29W 640GB

10/90

Figure 2. TSOP48 con necti ons

DQ3

DQ9

DQ2

A6 DQ0

DQ6

A9 DQ13

A17

A10 DQ14

DQ12

DQ10

DQ15A–1

VCC

DQ4

DQ5

DQ7

PP/WP

A21 M29W640GT

M29W640GB

M29W640GH

M29W640GL

24 25

DQ8

A20

A19

A18

DQ1

DQ11

A12

A13

A16

A11

BYTE

A15

A14 VSS

VSS

AI13695

M29 W640G H, M29W640GL, M29W6 40GT, M 29W64 0GB Descrip tion

11/90

Figure 3. TSOP56 con necti ons

DQ3

DQ9

DQ2

A6 DQ0

DQ6

A9 DQ13

A17

A10 DQ14

DQ12

DQ10

DQ15A–

VCC

DQ4

DQ5

DQ7

PP/WP

A21

M29W640GT

M29W640GB

M29W640GH

M29W640GL

28 29

DQ8

A20

A19

A18

DQ1

DQ11

A12

A13

A16

A11

BYTE

A15

A14 VSS

VSS

ai13696

VCC

14 43

Descript ion M29 W640G H, M29 W640GL, M2 9W640 GT , M29W 640GB

12/90

Figure 4. TFBGA 48 conne ctions (top view thro ugh package)

654321

VSS

A15

A14

A12

A13

DQ3

DQ11

DQ10

A18

VPP

DQ1

DQ9

DQ8

DQ0

A17

DQ2

DQ6

DQ13

DQ14

A10

DQ4

VCC

DQ12

DQ5

A19

A21

A11

DQ7

VSS

A5 A20

A16

BYTE

DQ15

A–1

AI12718

M29 W640G H, M29W640GL, M29W6 40GT, M 29W64 0GB Descrip tion

13/90

Figure 5. TBGA64 connections (top view throu gh package)

1. Pads D8 and F1 are not connected (NC) on the M29W640GT and M29W640GB devices.

654321

VSS

A15

A14

A12

A13

DQ3

DQ11

DQ10

A18

VPP

DQ1

DQ9

DQ8

DQ0

A17

DQ2

DQ6

DQ13

DQ14

A10

DQ4

VCC

DQ12

DQ5

A19

A21

A11

DQ7

VSS

A5 A20

A16

BYTE

DQ15

A–1

AI12719

VCC(1)

VSS

VCC(1)

Signal descrip ti o n s M29 W640G H, M29 W640G L , M29W6 40GT, M 29W640GB

14/90

2 Signal descriptions

See Figure 1: Lo gi c diagr am, and Ta bl e 2: S i gnal names , for a brief overview of the signals

connected to the device.

2.1 Address Inputs (A0-A21)

The Address Inputs select the cells in the memory array to access during bus read

operations. During bus write operations they control the commands sent to the command

interface of the program/erase controller.

2.2 Data Inputs/Outputs (DQ0-DQ7)

The Data I/O outputs the data stored at the selected address during a bus read operation.

During bus write operations they represent the commands sent to the command interface of

the program/erase controller.

2.3 Data Inputs/Outputs (DQ8-DQ14)

The Data I/O outputs the data stored at the selected address during a bus read operation

when BYTE is High, VIH. When BYTE is Low, VIL, these pins are not used and are high

impedance. During bus write operations the command register does not use these bits.

When reading the status register these bits should be ignored.

2.4 Data Input/Output or Address Input (DQ15A–1)

When BYTE is High, VIH, this pin behaves as a Data Input/Output pin (as DQ8-DQ14).

When BYTE is Low, VIL, this pin behaves as an address pin; DQ15A–1 Low will select the

LSB of the addressed word, DQ15A–1 High will select the MSB. Throughout the text

consider references to the Data Input/Output to include this pin when BYTE is High and

references to the Address Inputs to include this pin when BYTE is Low except when stated

explicitly otherwise.

2.5 Chip Enable (E)

The Chip Enable, E, activates the memory, allowing bus read and bus write operations to be

performed. When Chip Enable is High, VIH, all other pins are ignored.

2.6 Output Enable (G)

The Output Enable, G, controls the bus read operation of the memory.

M29 W640G H, M29W 640G L , M29W6 40GT, M 29W64 0GB S ignal descriptions

15/90

2.7 Write Enable (W)

The Write Enable, W, controls the bus write operation of the memory’s command interface.

2.8 VPP/Write Protect (VPP/WP)

The VPP/Write Protect pin provides two functions. The VPP function allows the memory to

use an external high voltage power supply to reduce the time required for Unlock Bypass

Program operations. The Write Protect function performs hardware protection:

It protects the last block at the end of the addressable area (M29W640GH) or the first

block at the beginning of the addressable area (M29W640GL)

It protects the last two blocks at the end of the addressable area (M29W640GT) and

the first two boot blocks at the beginning of the addressable area (M29W640GB).

The VPP/Write Protect pin may be left floating or unconnected (see Table 17: DC

characteristics).

When VPP/Write Protect is Low, VIL, the last or first block in the M29W640GH and

M29W640GL, respectively, and the last or first two blocks in the M29W640GT and

M29W640GB, respectively, are protected. Program and erase operations in this block are

ignored while VPP/Write Protect is Low, even when RP is at VID.

When VPP/Write Protect is High, VIH, the memory reverts to the previous protection status

of the outermost blocks. Program and erase operations can now modify the data in the

outermost blocks unless the block is protected using block protection.

Applying 12 V to the VPP/WP pin will temporarily unprotect any block previously protected

(including the outermost blocks) using a high voltage block protection technique (in-system

or programmer technique). See Table 6: Hard ware p rotection for details.

When VPP/Write Protect is raised to VPP the memory automatically enters the unlock

bypass mode. When VPP/Write Protect returns to VIH or VIL normal operation resumes.

During unlock bypass program operations the memory draws IPP from the pin to supply the

programming circuits. See the description of the Unlock Bypass command in the command

interface section. The transitions from VIH to VPP and from VPP to VIH must be slower than

tVHVPP

, see Figure 18: Accele rate d pro gram timin g wavef orm s.

Never raise VPP/Write Protect to VPP from any mode except read mode, otherwise the

memory may be left in an indeterminate state.

A 0.1 μF capacitor should be connected between the VPP/Write Protect pin and the VSS

ground pin to decouple the current surges from the power supply. The PCB track widths

must be sufficient to carry the currents required during unlock bypass program, IPP

Signal descrip ti o n s M29 W640G H, M29 W640G L , M29W6 40GT, M 29W640GB

16/90

Table 6. Hardware protection

VPP/WP RP Function

VIL

VIH

M29W640GT and

M29W640GB

Last 2 blocks at the end of the addressable area

(M29W640GT) and first 2 blocks at the beginning of the

addressable area (M29W640GB) protected from

program/erase operations

M29W640GH and

M29W640GL

Last block at the end of the addressable area

(M29W640GH) and first block at the beginning of the

addressable area (M29W640GL) protected from

program/erase operations

VID

M29W640GT and

M29W640GB

All blocks temporarily unprotected except the last 2 blocks

at the end of the addressable area (M29W640GT) and first

2 blocks at the beginning of the addressable area

(M29W640GB)

M29W640GH and

M29W640GL

All blocks temporarily unprotected except the last block at

the end of the addressable area (M29W640GH) and first

block at the beginning of the addressable area

(M29W640GL)

VIH or VID VID All blocks temporarily unprotected

VPP VIH or VID All blocks temporarily unprotected

M29 W640G H, M29W 640G L , M29W6 40GT, M 29W64 0GB S ignal descriptions

17/90

2.9 Reset/Block Temporary Unprotect (RP)

The Reset/Block Temporary Unprotect pin can be used to apply a hardware reset to the

memory or to temporarily unprotect all blocks that have been protected.

Note that if VPP/WP is at VIL, then the last and the first block in the M29W640GH and

M29W640GL, respectively, and the last two and first two blocks in the M29W640GT and

M29W640GB, respectively, will remain protected even if RP is at VID.

A hardware reset is achieved by holding Reset/Block Temporary Unprotect Low, VIL, for at

least tPLPX. After Reset/Block Temporary Unprotect goes High, VIH, the memory will be

ready for bus read and bus write operations after tPHEL or tRHEL, whichever occurs last. See

the Sectio n 2.10: Ready /Busy Output ( RB) , Tabl e 20: Re se t/Bl ock Te mp orar y Un prot ec t AC

characteristics and Figure 17: Reset/Block Temporary Unprotect AC waveforms, for more

details.

Holding RP at VID will temporarily unprotect the protected blocks in the memory. Program

and erase operations on all blocks will be possible. The transition from VIH to VID must be

slower than tPHPHH.

2.10 Ready/Busy Output (RB)

The Ready/Busy pin is an open-drain output that can be used to identify when the device is

performing a program or erase operation. During program or erase operations Ready/Busy

is Low, VOL. Ready/Busy is high-impedance during read mode, auto select mode and erase

suspend mode.

After a hardware reset, bus read and bus write operations cannot begin until Ready/Busy

becomes high-impedance. See Table 20: Re set/Bl ock Temporar y Unprotect AC

characteristics and Figure 17: Reset/Block Temporary Unprotect AC waveforms, for more

details.

The use of an open-drain output allows the Ready/Busy pins from several memories to be

connected to a single pull-up resistor. A Low will then indicate that one, or more, of the

memories is busy.

2.11 Byte/Word Organization Select (BYTE)

The Byte/Word Organization Select pin is used to switch between the x8 and x16 bus

modes of the memory. When Byte/Word Organization Select is Low, VIL, the memory is in

x8 mode, when it is High, VIH, the memory is in x16 mode.

Signal descrip ti o n s M29 W640G H, M29 W640G L , M29W6 40GT, M 29W640GB

18/90

2.12 VCC supply voltage

VCC provides the power supply for all operations (read, program and erase).

The command interface is disabled when the VCC supply voltage is less than the lockout

voltage, VLKO. This prevents bus write operations from accidentally damaging the data

during power-up, power-down and power surges. If the program/erase controller is

programming or erasing during this time then the operation aborts and the memory contents

being altered will be invalid.

A 0.1 μF capacitor should be connected between the VCC supply voltage pin and the VSS

ground pin to decouple the current surges from the power supply. The PCB track widths

must be sufficient to carry the currents required during program and erase operations, ICC3.

2.13 VSS ground

VSS is the reference for all voltage measurements. The device features two VSS pins which

must be both connected to the system ground.

M29 W640G H, M29W 640GL, M29 W640 GT , M29W 640GB Bus o p erat ions

19/90

3 Bus operations

There are five standard bus operations that control the device. These are bus read, bus

write, output disable, standby and automatic standby. See Table 7: Bus opera tions, BYTE =

VIL and Table 8: Bus op eratio ns, BY TE = VIH , for a summary. Typically glitches of less than

5 ns on Chip Enable or Write Enable are ignored by the memory and do not affect bus

operations.

3.1 Bus read

Bus read operations read from the memory cells, or specific registers in the command

interface. A valid bus read operation involves setting the desired address on the Address

Inputs, applying a Low signal, VIL, to Chip Enable and Output Enable and keeping Write

Enable High, VIH. The Data Inputs/Outputs will output the value, see Figure 13: Rea d m ode

AC wave for m s (8 -b i t m od e) , and Table 18: Re ad AC characteri stics, for details of when the

output becomes valid.

3.2 Bus write

Bus write operations write to the command interface. To speed up the read operation the

memory array can be read in page mode where data is internally read and stored in a page

buffer. The page has a size of 4 words and is addressed by the address inputs A0-A1.

A valid bus write operation begins by setting the desired address on the Address Inputs.

The Address Inputs are latched by the command interface on the falling edge of Chip

Enable or Write Enable, whichever occurs last. The Data Inputs/Outputs are latched by the

command interface on the rising edge of Chip Enable or Write Enable, whichever occurs

first. Output Enable must remain High, VIH, during the whole bus write operation. See

Figure 15: Write AC wave forms , wri te enable controlled (8-b i t mode), F i gure 16: Write AC

waveforms, chip enable controlled (8-bit mode), and Table 19: Write AC characteristics for

details of the timing requirements.

3.3 Output disable

The Data Inputs/Outputs are in the high impedance state when Output Enable is High, VIH.

3.4 Standby

When Chip Enable is High, VIH, the memory enters standby mode and the Data

Inputs/Outputs pins are placed in the high-impedance state. To reduce the supply current to

the standby supply current, ICC2, Chip Enable should be held within VCC ± 0.2 V. For the

standby current level see Table 17: DC ch aracteris tics.

During program or erase operations the memory will continue to use the program/erase

supply current, ICC3, for program or erase operations until the operation completes.

Bus o peratio n s M29W640G H, M29 W640GL, M2 9W640 GT , M 29W64 0GB

20/90

3.5 Automatic standby

If CMOS levels (VCC ± 0.2 V) are used to drive the bus and the bus is inactive for 300 ns or

more the memory enters automatic standby where the internal supply current is reduced to

the standby supply current, ICC2. The Data Inputs/Outputs will still output data if a bus read

operation is in progress.

3.6 Special bus operations

Additional bus operations can be performed to read the electronic signature and also to

apply and remove block protection. These bus operations are intended for use by

programming equipment and are not usually used in applications. They require VID to be

applied to some pins.

3.6.1 Electronic signature

The memory has two codes, the manufacturer code and the device code, that can be read

to identify the memory. These codes can be read by applying the signals listed in Table 7:

Bus operations, BYTE = VIL and Table 8: Bus operations, BYTE = VIH, with A9 set to VID.

3.6.2 Block protect and chip unprotect

Groups of blocks can be protected against accidental program or erase. The protection

groups are shown in App endix A: Block addre sses, Table 29 and Table 30. The whole chip

can be unprotected to allow the data inside the blocks to be changed.

The VPP/Write Protect pin can be used to protect the blocks as described in Table 6:

Hardware protection.

Block protect and chip unprotect operations are described in Appendix D: Block protection.

M29 W640G H, M29W 640GL, M29 W640 GT , M29W 640GB Bus o p erat ions

21/90

Table 7. Bus operations, BYTE = VIL (1)

Operation E G W Address Inputs

DQ15A–1, A0-A21

Dat a Inputs/Outputs

DQ14-

DQ8 DQ7-DQ0

Bus read VIL VIL VIH Cell address Hi-Z Data Output

Bus write VIL VIH VIL Command address Hi-Z Data Input

Output disable X VIH VIH X Hi-Z Hi-Z

Standby VIH XXXHi-Z Hi-Z

Read manufacturer

code VIL VIL VIH

Table 9

Hi-Z 20h

Read device code

(cycle 1)

VIL VIL VIH Hi-Z

7Eh

Read device code

(cycle 2)

M29W640GH,

M29W640GL 0Ch

M29W640GT,

M29W640GB 10h

Read device code

(cycle 3)

M29W640GH,

M29W640GT 01h

M29W640GL,

M29W640GB 00h

Read extended

memory block

verify code

VIL VIL VIH Hi-Z

M29W640GL,

M29W640GT,

M29W640GB

88h (factory locked)

08h (customer

lockable)

M29W640GH

98h(factory locked)

18h (customer

lockable)

Read block

protection status VIL VIL VIH Hi-Z 01h (protected)

00h (unprotected)

1. X = VIL or VIH.

Bus o peratio n s M29W640G H, M29 W640GL, M2 9W640 GT , M 29W64 0GB

22/90

Table 8. Bus operations, BYTE = VIH(1)

Operation E G W Address Inputs

A0-A21 Data Inputs/Outputs

DQ15A–1, DQ14-D Q0

Bus read VIL VIL VIH Cell Address Data Output

Bus write VIL VIH VIL Command Address Data Input

Output disable X VIH VIH X Hi-Z

Standby VIH X X X Hi-Z

Read manufacturer

code VIL VIL VIH

Table 9

0020h

Read device code

(cycle 1)

VIL VIL VIH

227Eh

Read device code

(cycle 2)

M29W640GH,

M29W640GL 220Ch

M29W640GT,

M29W640GB 2210h

Read device code

(cycle 3)

M29W640GH,

M29W640GT 2201h

M29W640GL,

M29W640GB 2200h

Read extended

memory block verify

code

VIL VIL VIH

M29W640GL,

M29W640GT,

M29W640GB

2288h (factory locked)

2208h (customer

lockable)

M29W640GH

2298h(factory locked)

2218h (customer

lockable)

Read block

protection status VIL VIL VIH

0001h (protected)

0000h (unprotected)

1. X = VIL or VIH.

Table 9. Read electronic signature addresses(1)

Code A7-A0

BYTE = VIH

A6-A0, DQ15A–1

BYTE = VIL

Manufacturer code 00h 00h

Device code (cycle 1) 01h 02h

Device code (cycle 2) 0Eh 1Ch

Device code (cycle 3) 0Fh 1Eh

Extended memory block verify code 03h 06h

Block protection status 02h(2) 04h(2)

1. A9 = VID; other address bits set to VIL or VIH.

2. A12- A21 must be set to the block address.

M29 W640G H, M29W 640G L , M29W6 40GT, M 29W64 0GB Comm and interface

23/90

4 Command interface

All bus write operations to the memory are interpreted by the command interface.

Commands consist of one or more sequential bus write operations. Failure to observe a

valid sequence of bus write operations will result in the memory returning to read mode. The

long command sequences are imposed to maximize data security.

The address used for the commands changes depending on whether the memory is in 16-

bit or 8-bit mode. See either Table 10 or Table 11, depending on the configuration that is

being used, for a summary of the commands.

4.1 Standard commands

4.1.1 Read/Reset command

The Read/Reset command returns the memory to its read mode. It also resets the errors in

the status register. Either one or three bus write operations can be used to issue the

Read/Reset command.

The Read/Reset command can be issued, between bus write cycles before the start of a

program or erase operation, to return the device to read mode. If the Read/Reset command

is issued during the timeout of a block erase operation then the memory will take up to 10 μs

to abort. During the abort period no valid data can be read from the memory. The

Read/Reset command will not abort an erase operation when issued while in erase

suspend.

4.1.2 Auto Select command

The Auto Select command is used to read the manufacturer code, the device code, the

block protection status and the extended memory block verify code. Three consecutive bus

write operations are required to issue the Auto Select command. Once the Auto Select

command is issued the memory remains in auto select mode until a Read/Reset command

is issued. Read CFI Query and Read/Reset commands are accepted in auto select mode,

all other commands are ignored.

In auto select mode, the manufacturer code and the device code can be read by using a bus

read operation with addresses and control signals set as shown in Table 7: Bus operations,

BYTE = VIL and Table 8: Bus operations, BYTE = VIH, except for A9 that is ‘don’t care’.

The block protection status of each block can be read using a bus read operation with

addresses and control signals set as shown in Tab l e 7: Bu s operat i ons, BYT E = VIL and

Table 8: Bus operations, BYTE = VIH, except for A9 that is ‘don’t care’. If the addressed

block is protected then 01h is output on Data Inputs/Outputs DQ0-DQ7, otherwise 00h is

output (in 8-bit mode).

The protection status of the extended memory block, or extended memory block verify

code, can be read using a bus read operation with addresses and control signals set as

shown in Table 7: Bus operations, BYTE = VIL and Table 8: Bus operations, BYTE = VIH,

except for A9 that is ‘don’t care’. If the extended block is ‘factory locked’ then 80h is output

on Data Input/Outputs DQ0-DQ7, otherwise 00h is output (8-bit mode).

Comman d i n terface M29 W640G H, M29 W640G L , M29W6 40GT, M 29W64 0GB

24/90

4.1.3 Read CFI Query command

The Read CFI Query command is used to read data from the common flash interface (CFI)

memory area. This command is valid when the device is in the read array mode, or when

the device is in autoselected mode.

One bus write cycle is required to issue the Read CFI Query command. Once the command

is issued subsequent bus read operations read from the common flash interface memory

area.

The Read/Reset command must be issued to return the device to the previous mode (the

read array mode or autoselected mode). A second Read/Reset command would be needed

if the device is to be put in the read array mode from auto selected mode.

See Appendix B: Common flash interface (CFI), Tables 31, 32, 33, 34, 35 and 36 for details

on the information contained in the common flash interface (CFI) memory area.

4.1.4 Chip Erase command

The Chip Erase command can be used to erase the entire chip. Six bus write operations are

required to issue the Chip Erase command and start the program/erase controller.

If any blocks are protected then these are ignored and all the other blocks are erased. If all

of the blocks are protected the chip erase operation appears to start but will terminate within

about 100 μs, leaving the data unchanged. No error condition is given when protected

blocks are ignored.

During the erase operation the memory will ignore all commands, including the Erase

Suspend command. It is not possible to issue any command to abort the operation. Typical

chip erase times are given in Table 12: Program, erase times and endurance cycles. All bus

read operations during the chip erase operation will output the status register on the Data

Inputs/Outputs. See the section on the status register for more details.

After the chip erase operation has completed the memory will return to the read mode,

unless an error has occurred. When an error occurs the memory will continue to output the

status register. A Read/Reset command must be issued to reset the error condition and

return to read mode.

The Chip Erase command sets all of the bits in unprotected blocks of the memory to ’1’. All

previous data is lost.

Refer to Figur e 8: Chi p/bl ock erase waveforms (8 -bit mode) for a description of Chip Erase

AC waveforms.

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4.1.5 Block Erase command

The Block Erase command can be used to erase a list of one or more blocks. Six bus write

operations are required to select the first block in the list. Each additional block in the list can

be selected by repeating the sixth bus write operation using the address of the additional

block. The block erase operation starts the program/erase controller about 50 μs after the

last bus write operation. Once the program/erase controller starts it is not possible to select

any more blocks. Each additional block must therefore be selected within 50 μs of the last

block. The 50 μs timer restarts when an additional block is selected. The status register can

be read after the sixth bus write operation. See the status register section for details on how

to identify if the program/erase controller has started the block erase operation.

If any selected blocks are protected then these are ignored and all the other selected blocks

are erased. If all of the selected blocks are protected the block erase operation appears to

start but will terminate within about 100 μs, leaving the data unchanged. No error condition

is given when protected blocks are ignored.

During the block erase operation the memory will ignore all commands except the Erase

Suspend command. Typical block erase times are given in Ta bl e 1 2: Program , erase time s

and endu rance cycles. All bus read operations during the block erase operation will output

the status register on the Data Inputs/Outputs. See the Sec tion 5: Statu s regis ter for more

details.

After the block erase operation has completed the memory will return to the read mode,

unless an error has occurred. When an error occurs the memory will continue to output the

status register. A Read/Reset command must be issued to reset the error condition and

return to read mode.

The Block Erase command sets all of the bits in the unprotected selected blocks to ’1’. All

previous data in the selected blocks is lost.

Refer to F igu re 8: Chi p/ bl ock er as e wave for ms (8 -b it mod e) for a description of Block Erase

AC waveforms.

4.1.6 Erase Suspend command

The Erase Suspend command may be used to temporarily suspend a block erase operation

and return the memory to read mode. The command requires one bus write operation.

The program/erase controller will suspend within the erase suspend latency time of the

Erase Suspend command being issued. Once the program/erase controller has stopped the

memory will be set to read mode and the erase will be suspended. If the Erase Suspend

command is issued during the period when the memory is waiting for an additional block

(before the program/erase controller starts) then the erase is suspended immediately and

will start immediately when the Erase Resume command is issued. It is not possible to

select any further blocks to erase after the Erase Resume.

During Erase Suspend it is possible to read and program cells in blocks that are not being

erased; both read and program operations behave as normal on these blocks. If any attempt

is made to program in a protected block or in the suspended block then the Program

command is ignored and the data remains unchanged. The status register is not read and

no error condition is given. Reading from blocks that are being erased will output the status

It is also possible to issue the Auto Select, Read CFI Query and Unlock Bypass commands

during an Erase Suspend. The Read/Reset command must be issued to return the device to

read array mode before the Resume command will be accepted.

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4.1.7 Erase Resume command

The Erase Resume command must be used to restart the program/erase controller after an

Erase Suspend. The device must be in read array mode before the Resume command will

be accepted. An erase can be suspended and resumed more than once.

4.1.8 Program Suspend command

The Program Suspend command allows the system to interrupt a program operation so that

data can be read from any block. When the Program Suspend command is issued during a

program operation, the device suspends the program operation within the program suspend

latency time (see Table 12: Program, erase times and endurance cycles for value) and

updates the status register bits.

After the program operation has been suspended, the system can read array data from any

address. However, data read from program-suspended addresses is not valid.

The Program Suspend command may also be issued during a program operation while an

erase is suspended. In this case, data may be read from any addresses not in Erase

Suspend or Program Suspend. If a read is needed from the extended block area (one-time

program area), the user must use the proper command sequences to enter and exit this

region.

The system may also issue the Auto Select command sequence when the device is in the

program suspend mode. The system can read as many auto select codes as required.

When the device exits the auto select mode, the device reverts to the program suspend

mode, and is ready for another valid operation. See Auto Select command sequence for

more information.

4.1.9 Program Resume command

After the Program Resume command is issued, the device reverts to programming. The

controller can determine the status of the program operation using the DQ7 or DQ6 status

bits, just as in the standard program operation. See write operation status for more

information.

The system must write the Program Resume command, to exit the program suspend mode

and to continue the programming operation.

Further issuing of the Resume command is ignored. Another Program Suspend command

can be written after the device has resumed programming.

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4.1.10 Program command

The Program command can be used to program a value to one address in the memory

array at a time. The command requires four bus write operations, the final write operation

latches the address and data, and starts the program/erase controller.

Programming can be suspended and then resumed by issuing a Program Suspend

command and a Program Resume command, respectively (see Section 4.1.8: Program

Suspend command and Section 4.1.9: Program Resume command).

If the address falls in a protected block then the Program command is ignored, the data

remains unchanged. The status register is never read and no error condition is given.

During the program operation the memory will ignore all commands. It is not possible to

issue any command to abort or pause the operation. Typical program times are given in

Table 12: P rogra m , erase ti m es and endur ance cyc l es . Bus read operations during the

program operation will output the status register on the Data Inputs/Outputs. See the section

on the status register for more details.

After the program operation has completed the memory will return to the read mode, unless

an error has occurred. When an error occurs the memory will continue to output the status

read mode.

Note that the Program command cannot change a bit set to ’0’ back to ’1’. One of the erase

commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’.

Refer to Figur e 6: Write enable controlled program wav e f orms ( 8-bit mode) and Figure 7:

Chip enable controlled program waveforms (8-bit mode) for a description of Program AC

waveforms.

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4.2 Fast program commands

There are five fast program commands available to improve the programming throughput,

by writing several adjacent words or bytes in parallel:

Quadruple and Octuple Byte Program, available for x8 operations

Double and Quadruple Word Program, available for x16 operations

Write to Buffer and Program

Fast program commands can be suspended and then resumed by issuing a Program

Suspend command and a Program Resume command, respectively (see Section 4.1.8:

Pr ogram S uspend command and Section 4.1.9: Program Resume command).

4.2.1 Double Byte Program command

The Double Byte Program command is used to write a page of two adjacent bytes in

parallel. The two bytes must differ only in DQ15A-1. Three bus write cycles are necessary to

issue the Double Byte Program command:

1. The first bus cycle sets up the Double Byte Program command

2. The second bus cycle latches the Address and the Data of the first byte to be written

3. The third bus cycle latches the address and the data of the second byte to be written.

Note: It is not necessary to raise VPP/WP to 12 V bef ore is suing thi s command.

4.2.2 Quadruple Byte Pr ogram command

The Quadruple Byte Program command is used to write a page of four adjacent bytes in

parallel. The four bytes must differ only for addresses A0, DQ15A-1. Five bus write cycles

are necessary to issue the Quadruple Byte Program command:

1. The first bus cycle sets up the Quadruple Byte Program command

2. The second bus cycle latches the address and the data of the first byte to be written

3. The third bus cycle latches the address and the data of the second byte to be written

4. The fourth bus cycle latches the address and the data of the third byte to be written

5. The fifth bus cycle latches the address and the data of the fourth byte to be written and

starts the program/erase controller.

Note: It is not necessary to raise VPP/WP to 12 V bef ore is suing thi s command.

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4.2.3 Octuple Byte Program command

This is used to write eight adjacent bytes, in x8 mode, simultaneously. The addresses of the

eight bytes must differ only in A1, A0 and DQ15A-1.

12 V must be applied to the VPP/Write Protect pin, VPP/WP, prior to issuing an Octuple Byte

Program command. Care must be taken because applying a 12 V voltage to the VPP/WP pin

will temporarily unprotect any protected block.

Nine bus write cycles are necessary to issue the command:

1. The first bus cycle sets up the command.

2. The second bus cycle latches the address and the data of the first byte to be written

3. The third bus cycle latches the address and the data of the second byte to be written

4. The fourth bus cycle latches the address and the data of the third byte to be written

5. The fifth bus cycle latches the address and the data of the fourth byte to be written

6. The sixth bus cycle latches the address and the data of the fifth byte to be written

7. The seventh bus cycle latches the address and the data of the sixth byte to be written

8. The eighth bus cycle latches the address and the data of the seventh byte to be written

9. The ninth bus cycle latches the address and the data of the eighth byte to be written

and starts the program/erase controller.

4.2.4 Double Word Program command

The Double Word Program command is used to write a page of two adjacent words in

parallel. The two words must differ only for the address A0.

Three bus write cycles are necessary to issue the Double Word Program command:

The first bus cycle sets up the Double Word Program command

The second bus cycle latches the address and the data of the first word to be written

The third bus cycle latches the address and the data of the second word to be written

and starts the program/erase controller.

After the program operation has completed the memory will return to the read mode, unless

an error has occurred. When an error occurs bus read operations will continue to output the

status register. A Read/Reset command must be issued to reset the error condition and

return to read mode.

Note that the fast program commands cannot change a bit set to ’0’ back to ’1’. One of the

erase commands must be used to set all the bits in a block or in the whole memory from ’0’

to ’1’.

Typical program times are given in Table 12: Progra m , erase tim es and endur ance cyc l es.

Note: It is not necessary to raise VPP/WP to 12 V bef ore is suing thi s command.

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4.2.5 Quadruple Word Program command

This is used to write a page of four adjacent words (or 8 adjacent bytes), in x16 mode,

simultaneously. The addresses of the four words must differ only in A1 and A0.

12 V must be applied to the VPP/Write Protect pin, VPP/WP, prior to issuing a Quadruple

Byte Program command. Care must be taken because applying a 12 V voltage to the

VPP/WP pin will temporarily unprotect any protected block.

Five bus write cycles are necessary to issue the command:

The first bus cycle sets up the command.

The second bus cycle latches the address and the data of the first word to be written

The third bus cycle latches the address and the data of the second word to be written

The fourth bus cycle latches the address and the data of the third word to be written

The fifth bus cycle latches the address and the data of the fourth word to be written and

starts the program/erase controller.

4.2.6 Unlock Bypass command

The Unlock Bypass command is used in conjunction with the Unlock Bypass Program

command to program the memory faster than with the standard program commands. When

the cycle time to the device is long, considerable time saving can be made by using these

commands. Three bus write operations are required to issue the Unlock Bypass command.

Once the Unlock Bypass command has been issued the memory will only accept the Unlock

Bypass Program command and the Unlock Bypass Reset command. The memory can be

read as if in read mode.

When VPP is applied to the VPP/Write Protect pin the memory automatically enters the

unlock bypass mode and the Unlock Bypass Program command can be issued immediately.

4.2.7 Unl ock Bypass Program command

The Unlock Bypass command is used in conjunction with the Unlock Bypass Program

command to program the memory. When the cycle time to the device is long, considerable

time saving can be made by using these commands. Three bus write operations are

required to issue the Unlock Bypass command.

Once the Unlock Bypass command has been issued the memory will only accept the Unlock

Bypass Program command and the Unlock Bypass Reset command. The memory can be

read as if in read mode.

The memory offers accelerated program operations through the VPP/Write Protect pin.

When the system asserts VPP on the VPP/Write Protect pin, the memory automatically

enters the unlock bypass mode. The system may then write the two-cycle unlock bypass

program command sequence. The memory uses the higher voltage on the VPP/Write

Protect pin, to accelerate the unlock bypass program operation.

Never raise VPP/Write Protect to VPP from any mode except read mode, otherwise the

memory may be left in an indeterminate state.

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4.2.8 Unlock Byp ass Reset command

The Unlock Bypass Reset command can be used to return to read/reset mode from unlock

bypass mode. Two bus write operations are required to issue the Unlock Bypass Reset

command. Read/Reset command does not exit from unlock bypass mode.

4.2.9 Write to Buffer and Program command

The Write to Buffer and Program command makes use of the device’s 32-byte write buffer to

speed up programming. 16 words/32 bytes can be loaded into the write buffer. Each write

buffer has the same A4-A22 addresses.The Write to Buffer and Program command

dramatically reduces system programming time compared to the standard non-buffered

Program command.

When issuing a Write to Buffer and Program command, the VPP/WP pin can be either held

High, VIH or raised to VPPH.

See Table 12 for details on typical Write to Buffer and Program times in both cases.

Five successive steps are required to issue the Write to Buffer and Program command:

1. The Write to Buffer and Program command starts with two unlock cycles

2. The third bus write cycle sets up the Write to Buffer and Program command. The setup

code can be addressed to any location within the targeted block.

3. The fourth bus write cycle sets up the number of words to be programmed. Value n is

written to the same block address, where n+1 is the number of words to be

programmed. n+1 must not exceed the size of the write buffer or the operation will

abort

4. The fifth cycle loads the first address and data to be programmed

5. Use n bus write cycles to load the address and data for each word into the write buffer.

Addresses must lie within the range from the start address+1 to the start address + n-1.

Optimum performance is obtained when the start address corresponds to a 64-byte

boundary. If the start address is not aligned to a 64-byte boundary, the total

programming time is doubled.

All the addresses used in the Write to Buffer and Program operation must lie within the

same page. If an address is written several times during a Write to Buffer and Program

operation, the address/data counter will be decremented at each data load operation and

the data will be programmed to the last word loaded into the buffer. Invalid address

combinations or failing to follow the correct sequence of bus write cycles will abort the Write

to Buffer and Program.

The status register bits DQ1, DQ5, DQ6, DQ7 can be used to monitor the device status

during a Write to Buffer and Program operation. It is possible to detect program operation

fails when changing programmed data from ‘0’ to ‘1’, that is when reprogramming data in a

portion of memory already programmed. The resulting data will be the logical OR between

the previous value and the current value.

To program the content of the write buffer, this command must be followed by a Write to

Buffer and Program Confirm command.

A Write to Buffer and Program Abort and Reset command must be issued to abort the Write

to Buffer and Program operation and reset the device in read mode.

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The write buffer programming sequence can be aborted in the following ways:

Load a value that is greater than the page buffer size during the number of locations to

program step

Write to an address in a block different than the one specified during the Write-Buffer-

Load command

Write an address/data pair to a different write-buffer-page than the one selected by the

starting address during the write buffer data loading stage of the operation

Write data other than the Confirm command after the specified number of data load

cycles.

The abort condition is indicated by DQ1 = 1, DQ7 = DATA# (for the last address location

loaded), DQ6 = toggle, and DQ5=0. A Write-to-Buffer-Abort Reset command sequence

must be written to reset the device for the next operation. Note that the full 3-cycle Write-to-

Buffer-Abort Reset command sequence is required when using write-buffer-programming

features in unlock bypass mode.

See Appendix E : Fl owchart, Figure 30: Write to Buffer and Program flowchart and

pseudocode, for a suggested flowchart on using the Write to Buffer and Program command.

4.2.10 Wri te to Buffer and Program Confirm command

The Write to Buffer and Program Confirm command is used to confirm a Write to Buffer and

Program command and to program the n+1 words loaded in the write buffer by this

command.

4.2.11 Write to Buffer and Program Abort and Reset command

The Write to Buffer and Program Abort and Reset command is used to reset the device after

a Write to Buffer and Program command has been aborted.

4.3 Block protection commands

4.3.1 Enter Extended Block command

The device has an extra 256-byte block (extended block) that can only be accessed using

the Enter Extended Block command. Three bus write cycles are required to issue the

Extended Block command. Once the command has been issued the device enters extended

block mode where all bus read or write operations to the boot block addresses access the

extended block. The extended block (with the same address as the boot blocks) cannot be

erased, and can be treated as one-time programmable (OTP) memory. In extended block

mode the boot blocks are not accessible.

To exit from the extended block mode the Exit Extended Block command must be issued.

The extended block can be protected, however once protected the protection cannot be

undone.

4.3.2 Exit Extended Block command

The Exit Extended Block command is used to exit from the extended block mode and return

the device to read mode. Four bus write operations are required to issue the command.

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4.3.3 Blo ck Protect and Chip Unprotect commands

Groups of blocks can be protected against accidental program or erase. The protection

groups are shown in App endix A: Block addre sses, Table 29: Top boot bloc k addresses ,

M29W640GT and Table 30: Bottom boot block addresses, M29W6 40GB. The whole chip

can be unprotected to allow the data inside the blocks to be changed.

Block protect and chip unprotect operations are described in Appendix D: Block protection.

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Table 10. Commands, 16-bit mode , BYTE = VIH(1)

Command

Length

Bus write operations

1st 2nd 3rd 4th 5th 6th

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

Read/Reset 1XF0

3555AA2AA55 X F0

Auto Select 3 555 AA 2AA 55 555 90

Program 4 555 AA 2AA 55 555 A0 PA PD

Double Word

Program 3 555 50 PA0 PD0 PA1 PD1

Quadruple Word

Program 5 555 56 PA0 PD0 PA1 PD1 PA2 PD2 PA3 PD3

Unlock Bypass 3 555 AA 2AA 55 555 20

Unlock Bypass

Program 2XA0PAPD

Unlock Bypass Reset 2 X 90 X 00

Write to Buffer and

Program N+5 555 AA 2AA 55 BA 25 BA N(2) PA(3) PD WBL

(4) PD

Write to Buffer and

Program Abort and

Reset

3 555 AA 2AA 55 555 F0

Write to Buffer and

Program Confirm 1BA

(5) 29

Chip Erase 6 555 AA 2AA 55 555 80 555 AA 2AA 55 555 10

Block Erase 6+ 555 AA 2AA 55 555 80 555 AA 2AA 55 BA 30

Program/Erase

Suspend 1XB0

Program/Erase

Resume 1X30

Read CFI Query 1 55 98

Enter Extended Block 3 555 AA 2AA 55 555 88

Exit Extended Block 4 555 AA 2AA 55 555 90 X 00

1. X Don’t Care, PA Program Address, PD Program Data, BA any address in the Block. All values in the table are in

hexadecimal.

The command interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A20, DQ8-DQ14 and DQ15

are don’t care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.

2. The maximum number of cycles in the command sequence is 36. N+1 is the number of words to be programmed during the

write to buffer and program operation.

3. Each buffer has the same A4-A22 addresses. A0-A3 are used to select a word within the N+1 word page.

4. The 6th cycle has to be issued N time. WBL scans the word inside the page.

5. BA must be identical to the address loaded during the Write to buffer and Program 3rd and 4th cycles.

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Table 11. C om m ands , 8-bit mode, BYTE = VIL

Command

Length

Bus write operations(1)

1st 2nd 3rd 4th 5th 6th 7th 8th 9th

Add Data Add Data Add Data Add Data Add Data Add Data Add Data Add Data Add Data

Read/Reset 1XF0

3 AAA AA 555 55 X F0

Auto Select 3 AAA AA 555 55 AAA 90

Program 4 AAA AA 555 55 AAA A0 PA PD

Double Byte

Program 3 AAA 50 PA0 PD0 PA1 PD1

Quadruple

Byte Program 5 AAA 56 PA0 PD0 PA1 PD1 PA2 PD2 PA3 PD3

Octuple Byte

Program 9 AAA 8B PA0 PD0 PA1 PD1 PA2 PD2 PA3 PD3 PA4 PD4 PA5 PD5 PA6 PD6 PA7 PD7

Unlock Bypass 3 AAA AA 555 55 AAA 20

Unlock Bypass

Program 2 X A0 PA PD

Unlock Bypass

Reset 2X 90X00

Write to Buffer

and Program

N+

5AAA AA 555 55 BA 25 BA N(2) PA

(3) PD WBL

(4) PD

Write to Buffer

and Program

Abort and

Reset

3 AAA AA 555 55 AAA F0

Write to Buffer

and Program

Confirm

1BA

(5) 29

Chip Erase 6 AAA AA 555 55 AAA 80 AAA AA 555 55 AAA 10

Block Erase 6+ AAA AA 555 55 AAA 80 AAA AA 555 55 BA 30

Program/Erase

Suspend 1XB0

Program/Erase

Resume 1X30

Read CFI

Query 1AA98

Enter

Extended

Block

3 AAA AA 555 55 AAA 88

Exit Extended

Block 4 AAA AA 555 55 AAA 90 X 00

1. X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in

hexadecimal.

The command interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A20, DQ8-DQ14 and DQ15 are

don’t care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.

2. The maximum number of cycles in the command sequence is 68. N+1 is the number of bytes to be programmed during the write to buffer and

program operation.

3. Each buffer has the same A4-A22 addresses. A0-A3 and DQ15A-1 are used to select a byte within the N+1 byte page.

4. The 6th cycle has to be issued N time. WBL scans the byte inside the page.

5. BA must be identical to the address loaded during the Write to buffer and Program 3rd and 4th cycles.

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Table 12. Program, erase tim es and endura nce cycle s

Parameter Symbol Min Typ(1)(2) Max(2) Unit

Chip Erase 80 400(3) s

Block Erase (64 Kbytes)(4)(5) tWHWH2 0.5 s

Erase Suspend Latency Time 50(6) μs

Program (byte or word) 10 200(3) μs

Double Byte 10 200(3) μs

Double Word /Quadruple Byte Program 10 200(3) μs

Quadruple Word / Octuple Byte Program 10 200(3) μs

Single Byte and Word Program(7) tWHWH1 10 μs

32-byte/16-word Program using Write to Buffer and Program 180 μs

32-byte/16-word Program using Write to Buffer and Program

(VPP/WP = 12 V) 45 μs

Chip Program (byte by byte) 80 400(3) s

Chip Program (word by word) 40 200(3) s

Chip Program (Double Word/Quadruple Byte Program) 20 100(3) s

Chip Program (Quadruple Word/Octuple Byte Program) 10 50(3) s

Program Suspend Latency Time 4 μs

Program/Erase Cycles (per block) 100,000 cycles

Data Retention 20 years

1. Typical values measured at room temperature and nominal voltages.

2. Sampled, but not 100% tested.

3. Maximum value measured at worst case conditions for both temperature and VCC after 100,000 program/erase cycles.

4. This time does not include the pre-programming time.

5. Block erase polling cycle time (see Figure 19).

6. Maximum value measured at worst case conditions for both temperature and VCC.

7. Program polling cycle time (see Figure 6, Figure 7 and Figure 19).

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Figure 6. Write enable controll ed program wav ef orm s (8 -bit mode)

1. Only the third and fourth cycles of the Program command are represented. The Program command is followed by the check

of status register data polling bit and by a read operation that outputs the data, DOUT, programmed by the previous

Program command.

2. PA is address of the memory location to be programmed. PD is the data to be programmed.

3. DQ7 is the complement of the data bit being programmed to DQ7 (see Section 5.1: Data polling bit (DQ7)).

4. Addresses differ in x8 mode.

5. See Table 19: Write AC characteristics and Table 18: Read AC characteristics for details on the timings.

AI1277

A0-A20/

A–1

DQ0-DQ7/

DQ8-DQ15

555h

AOh

PA PA

3rd cycle 4th cycle

PD DQ7 DOUT

DOUT

tAVAV tAVAV

tAVWL tWLAX

Data Polling Read cycle

tELWL tWHEH tELQV

tGHWL

tWLWH tWHWL

tWHWH1

tGLQV

tDVWH

tWHDX

tGHQZ tAXQX

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Figure 7. Chi p enable controlled prog ram waveforms (8-bit mode)

1. Only the third and fourth cycles of the Program command are represented. The Program command is followed by the check

of status register data polling bit.

2. PA is address of the memory location to be programmed. PD is the data to be programmed.

3. DQ7 is the complement of the data bit being programmed to DQ7 (see Section 5.1: Data polling bit (DQ7)).

4. Addresses differ in x8 mode.

5. See Table 19: Write AC characteristics and Table 18: Read AC characteristics for details on the timings.

AI1278

A0-A20/

A–1

DQ0-DQ7/

DQ8-DQ15

555h

AOh

PA PA

3rd cycle 4th cycle

PD DQ7 DOUT

tAVAV

tAVEL tELAX

Data Polling

tWLEL tEHWH

tGHEL

tELEH tEHEL1

tWHWH1

tDVEH

tEHDX

M29 W640G H, M29W 640G L , M29W6 40GT, M 29W64 0GB Comm and interface

39/90

Fig ur e 8. Chi p /bloc k erase waveforms (8-bit mode)

1. For a Chip Erase command, addresses and data are 555h and 10h, respectively, while they are BA and 30h for a Block

Erase command.

2. BA is the block address.

3. See Table 19: Write AC characteristics and Table 18: Read AC characteristics for details on the timings.

AI1278

A0-A20/

A–1

DQ0-DQ7/

DQ8-DQ15

555h

AAh

2AAh 555h

55h 80h AAh

tAVAV

tAVWL tWLAX

tELWL tWHEH

tGHWL

tWLWH tWHWL

tDVWH

tWHDX

555h 2AAh 555h/BA

(1)

55h 10h/

30h

Stat u s reg ister M29 W640G H, M29 W640G L , M29W6 40GT, M 29W64 0GB

40/90

5 Status register

Bus read operations from any address always read the status register during program and

erase operations. It is also read during erase suspend when an address within a block being

erased is accessed.

The bits in the status register are summarized in Table 13: Status register bits.

5.1 Data polling bit (DQ7)

The data polling bit can be used to identify whether the program/erase controller has

successfully completed its operation or if it has responded to an erase suspend. The data

polling bit is output on DQ7 when the status register is read.

During program operations the data polling bit outputs the complement of the bit being

programmed to DQ7. After successful completion of the program operation the memory

returns to read mode and bus read operations from the address just programmed output

DQ7, not its complement.

During erase operations the data polling bit outputs ’0’, the complement of the erased state

of DQ7. After successful completion of the erase operation the memory returns to read

mode.

In erase suspend mode the data polling bit will output a ’1’ during a bus read operation

within a block being erased. The data polling bit will change from a ’0’ to a ’1’ when the

program/erase controller has suspended the erase operation.

Figure 9: Data polling flowchart, gives an example of how to use the data polling bit. A valid

address is the address being programmed or an address within the block being erased.

Table 20: Reset/Block Temporary Unprotect AC characteristics gives a description of the

data polling operation and timings.

5.2 Toggle bit (DQ6)

The toggle bit can be used to identify whether the program/erase controller has successfully

completed its operation or if it has responded to an erase suspend. The toggle bit is output

on DQ6 when the status register is read.

During program and erase operations the toggle bit changes from ’0’ to ’1’ to ’0’, etc., with

successive bus read operations at any address. After successful completion of the

operation the memory returns to read mode.

During erase suspend mode the toggle bit will output when addressing a cell within a block

being erased. The toggle bit will stop toggling when the program/erase controller has

suspended the erase operation.

Figure 10: Data toggle f lo wc hart , gives an example of how to use the data toggle bit.

Figure 20: Toggle/alternative toggle bit polling AC waveforms (8-bit mode) gives a

description of the data polling operation and timings.

M29 W640G H, M29W 640GL, M29 W640 GT , M29W 640GB Sta tu s regi ster

41/90

5.3 Error bit (DQ5)

The error bit can be used to identify errors detected by the program/erase controller. The

error bit is set to ’1’ when a program, block erase or chip erase operation fails to write the

correct data to the memory. If the error bit is set a Read/Reset command must be issued

before other commands are issued. The error bit is output on DQ5 when the status register

is read.

Note that the Program command cannot change a bit set to ’0’ back to ’1’ and attempting to

do so will set DQ5 to ‘1’. A bus read operation to that address will show the bit is still ‘0’. One

of the erase commands must be used to set all the bits in a block or in the whole memory

from ’0’ to ’1’.

5.4 Erase timer bit (DQ3)

The erase timer bit can be used to identify the start of program/erase controller operation

during a Block Erase command. Once the program/erase controller starts erasing the erase

timer bit is set to ’1’. Before the program/erase controller starts the erase timer bit is set to ’0’

and additional blocks to be erased may be written to the command interface. The erase

timer bit is output on DQ3 when the status register is read.

5.5 Alternative toggle bit (DQ2)

The alternative toggle bit can be used to monitor the program/erase controller during erase

operations. The alternative toggle bit is output on DQ2 when the status register is read.

During chip erase and block erase operations the toggle bit changes from ’0’ to ’1’ to ’0’,

etc., with successive bus read operations from addresses within the blocks being erased. A

protected block is treated the same as a block not being erased. Once the operation

completes the memory returns to read mode.

During erase suspend the alternative toggle bit changes from ’0’ to ’1’ to ’0’, etc. with

successive bus read operations from addresses within the blocks being erased. Bus read

operations to addresses within blocks not being erased will output the memory cell data as if

in read mode.

After an erase operation that causes the error bit to be set the alternative toggle bit can be

used to identify which block or blocks have caused the error. The alternative toggle bit

changes from ’0’ to ’1’ to ’0’, etc. with successive bus read operations from addresses within

blocks that have not erased correctly. The alternative toggle bit does not change if the

addressed block has erased correctly.

Figure 20: Toggle/alternative toggle bit polling AC waveforms (8-bit mode) gives a

description of the data polling operation and timings.

5.6 Write to buffer and program abort bit (DQ1)

The write to buffer and program abort bit, DQ1, is set to ‘1’ when a write to buffer and

program operation aborts. Otherwise, DQ1 bit is set to ‘0’. The Write to Buffer and Program

Abort and Reset command must be issued to return the device to read mode (see Write to

Buffer and Program in the commands section).

Stat u s reg ister M29 W640G H, M29 W640G L , M29W6 40GT, M 29W64 0GB

42/90

Tabl e 13. S tatu s reg i s ter bits(1)

Operation Address DQ7 DQ6 DQ5 DQ3 DQ2 DQ1 RB

Program Any address DQ7 To g g l e 0 – – 0 0

Program During Erase

Suspend Any address DQ7 To gg l e 0 – – – 0

Write to Buffer and

Program Abort Any address DQ7 To gg l e 0 – – 1 0

Write to Buffer and

Program Any address DQ7 To g g l e 0 – – 0 0

Program Error Any address DQ7 Toggle 1 – – – Hi-Z

Chip Erase Any address 0 Toggle 0 1 Toggle – 0

Block Erase before

timeout

Erasing block 0 Toggle 0 0 Toggle – 0

Non-erasing block 0 Toggle 0 0 No Toggle – 0

Block Erase

Erasing block 0 Toggle 0 1 Toggle – 0

Non-erasing block 0 Toggle 0 1 No Toggle – 0

Erase Suspend

Erasing block 1 No Toggle 0 – Toggle – Hi-Z

Non-erasing block Data read as normal – Hi-Z

Erase Error

Good block address 0 Toggle 1 1 No Toggle – Hi-Z

Faulty block address 0 Toggle 1 1 Toggle – Hi-Z

1. Unspecified data bits should be ignored.

M29 W640G H, M29W 640GL, M29 W640 GT , M29W 640GB Sta tu s regi ster

43/90

Figure 9. Data polling flowchart

READ DQ5 & DQ7

at VALID ADDRESS

START

READ DQ7

at VALID ADDRESS

FAIL PASS

AI90194

DQ7

DATA YES

YES

DQ5

= 1

DQ7

DATA YES

Stat u s reg ister M29 W640G H, M29 W640G L , M29W6 40GT, M 29W64 0GB

44/90

Figure 10. Data toggle flowchart

READ DQ6

START

READ DQ6

TWICE

FAIL PASS

AI90195B

DQ6

TOGGLE NO

YES

DQ5

= 1

YES

DQ6

TOGGLE

READ

DQ5 & DQ6

M29 W640G H, M29W 640GL, M29 W640 GT , M29W 640GB Max im u m ratings

45/90

6 Maximum ratings

Stressing the device above the rating listed in the Table 14: Absolute maximum rat ings may

cause permanent damage to the device. Exposure to absolute maximum rating conditions

for extended periods may affect device reliability. These are stress ratings only and

operation of the device at these or any other conditions above those indicated in the

operating sections of this specification is not implied.

Table 14. Absolute maximu m ratings

Symbol Parameter Min Max Unit

TBIAS Temperature under bias –50 125 °C

TSTG Storage temperature –65 150 °C

VIO Input or output voltage(1)(2)

1. Minimum voltage may undershoot to –2 V during transition and for less than 20 ns during transitions.

2. Maximum voltage may overshoot to VCC +2 V during transition and for less than 20 ns during transitions.

–0.6 VCC +0.6 V

VCC Supply voltage –0.6 4 V

VID Identification voltage –0.6 13.5 V

VPP(3)

3. VPP must not remain at 12 V for more than a total of 80 hrs.

Program voltage –0.6 13.5 V

DC and AC param eters M29 W640G H, M29 W640G L , M29W6 40GT, M 29W64 0GB

46/90

7 DC and AC parameters

This section summarizes the operating and measurement conditions, and the DC and AC

characteristics of the device. The parameters in the DC and AC characteristic tables that

follow are derived from tests performed under the measurement conditions summarized in

the relevant tables. Designers should check that the operating conditions in their circuit

match the measurement conditions when relying on the quoted parameters.

Figure 11. AC measurement I/O waveform

Fig u re 12. AC measurem ent load circuit

Table 15. Operating and AC measu rement conditions

Parameter

M29W640GT, M29W640GB,

M29W640GH, M29W640GL Unit

Min Max

VCC supply voltage 2.7 3.6 V

Ambient operating temperature –40 85 °C

Load capacitance (CL)30pF

Input rise and fall times 10 ns

Input pulse voltages 0 to VCC V

Input and output timing ref. voltages VCC/2 V

AI05557

VCC

VCC/2

AI05558

CL includes JIG capacitance

DEVICE

UNDER

TEST

25kΩ

VCC

25kΩ

VCC

0.1µF

VPP

0.1µF

M29 W640G H, M29W640GL, M29W6 40GT, M 29W64 0GB DC and AC parameters

47/90

1. Sampled only, not 100% tested.

Table 16. Device capacitance

Symbol Parameter Test condition Min Max Unit

CIN Input capacitance VIN = 0 V 6 pF

COUT Output capacitance VOUT = 0 V 12 pF

Tabl e 17. DC ch arac teristics

Symbol Parameter Test condition Min Max Unit

ILI(1)

1. The maximum input leakage current is ± 5 μA on the VPP/WP pin.

Input leakage current 0 V ≤ VIN ≤ VCC ±1 μA

ILO Output leakage current 0 V ≤ VOUT ≤ VCC ±1 μA

ICC1 Supply current (read) E = VIL, G = VIH,

f = 6 MHz 10 mA

ICC2 Supply current (standby) E = VCC ±0.2 V,

RP = VCC ±0.2 V 100 μA

ICC3

Supply current

(program/erase)

Program/erase

controller active

VPP/WP =

VIL or VIH

20 mA

VPP/WP = VPP 20 mA

VIL Input low voltage –0.5 0.8 V

VIH Input high voltage 0.7VCC VCC +0.3 V

VPP

Voltage for VPP/WP

program acceleration VCC = 2.7 V ± 10% 11.5 12.5 V

IPP

Current for VPP/WP

program acceleration VCC = 2.7 V ± 10% 15 mA

VOL Output low voltage IOL = 1.8 mA 0.45 V

VOH Output high voltage IOH =–100μAV

CC –0.4 V

VID Identification voltage 11.5 12.5 V

VLKO(2)

2. Sampled only, not 100% tested.

Program/erase lockout

supply voltage 1.8 2.3 V

DC and AC param eters M29 W640G H, M29 W640G L , M29W6 40GT, M 29W64 0GB

48/90

Figure 13. Read mode AC waveforms (8-bit mode)

1. Data are output on DQ0-DQ7. DQ8-DQ15 are Hi-Z.

Figu r e 14. Page read AC wavefo rms (8-b i t m od e)

AI05559

tAVAX

tAVQV tAXQX

tELQX tEHQZ

tGLQV

tGLQX tGHQX

VALID

A0-A20/

A–1

DQ0-DQ7/

DQ8-DQ15

tELQV tEHQX

tGHQZ

VALID

tBHQV

tELBL/tELBH tBLQZ

BYTE

AI12796b

A2-A20

A–1-A1 VALID

DQ0-DQ7

VALID VALID VALID

VALID ADDRESS

VALID DATA

VALID

DATA VALID DATA VALID DATA

tAVQV1tGLQV

tAVQV

tELQV tEHQX

tEHQZ

tGHQX

tGHQZ

M29 W640G H, M29W640GL, M29W6 40GT, M 29W64 0GB DC and AC parameters

49/90

Table 18. Read AC char ac teristics

Symbol Alt Parameter Test condition

M29W640GT,

M29W640GB,

M29W640GH,

M29W640GL Unit

60 70 90

tAVAX tRC Address Valid to Next Address Valid E = VIL,

G = VIL

Min607090ns

tAVQV tACC Address Valid to Output Valid E = VIL,

G = VIL

Max607090ns

tAVQV1 tPAG E Address Valid to Output Valid (Page) E = VIL,

G = VIL

Max253030ns

tELQX(1) tLZ Chip Enable Low to Output Transition G = VIL Min000ns

tELQV tCE Chip Enable Low to Output Valid G = VIL Max607090ns

tGLQX(1) tOLZ Output Enable Low to Output Transition E = VIL Min000ns

tGLQV tOE Output Enable Low to Output Valid E = VIL Max253030ns

tEHQZ(1) tHZ Chip Enable High to Output Hi-Z G = VIL Max253030ns

tGHQZ

tEHQZ(1) tDF Output Enable High to Output Hi-Z E = VIL Max253030ns

tEHQX

tGHQX

tAXQX

tOH

Chip Enable, Output Enable or Address

Transition to Output Transition Min000ns

tELBL

tELBH

tELFL

tELFH

Chip Enable to BYTE Low or High Max 5 5 5 ns

tBLQZ tFLQZ BYTE Low to Output Hi-Z Max 25 25 25 ns

tBHQV tFHQV BYTE High to Output Valid Max 25 30 30 ns

1. Sampled only, not 100% tested.

DC and AC param eters M29 W640G H, M29 W640G L , M29W6 40GT, M 29W64 0GB

50/90

Figu re 15. Write AC wave fo rms, write ena b le cont ro l le d (8-bit mode)

AI05560

A0-A20/

A–1

DQ0-DQ7/

DQ8-DQ15

VALID

VCC

tVCHEL

tWHEH

tWHWL

tELWL

tAVWL

tWHGL1

tWLAX

tWHDX

tAVAX

tDVWH

tWLWHtGHWL

tWHRL

M29 W640G H, M29W640GL, M29W6 40GT, M 29W64 0GB DC and AC parameters

51/90

Figure 16. Write AC waveforms, chip enable controlled (8-bit mode)

AI0556

A0-A20/

A–1

DQ0-DQ7/

DQ8-DQ15

VALID

VCC

tVCHWL

tEHWH

tEHEL1

tWLEL

tAVEL

tEHGL1

tELAX

tEHDX

tAVAV

tDVEH

tELEHtGHEL

tEHRL

DC and AC param eters M29 W640G H, M29 W640G L , M29W6 40GT, M 29W64 0GB

52/90

Table 19. Wri te AC cha rac teristics

Symbol Alt Parameter

M29W640GT, M29W640GB,

M29W640G H , M29W640GL Unit

60 70 90

tAVAX tWC Address Valid to Next Address Valid Min 60 70 90 ns

tELWL tCS Chip Enable Low to Write Enable Low Min 0 0 0 ns

tWLEL tWS Write Enable Low to Chip Enable Low Min 0 0 0 ns

tWLWH tWP Write Enable Low to Write Enable High Min 35 35 35 ns

tELEH tCP Chip Enable Low to Chip Enable High Min 35 35 35 ns

tDVWH

tDVEH

tDS

Input Valid to Write Enable or Chip Enable

High Min303030ns

tWHDX

tEHDX

tDH

Write Enable or Chip Enable High to Input

Transition Min 0 0 0 ns

tWHEH tCH Write Enable High to Chip Enable High Min 0 0 0 ns

tEHWH tWH Chip Enable High to Write Enable High Min 0 0 0 ns

tWHWL tWPH Write Enable High to Write Enable Low Min 25 25 25 ns

tWHGL1

tEHGL1

tOEH Output Enable Hold time Min 0 0 0 ns

tEHEL1 tCPH Chip Enable High to Chip Enable Low Min 25 25 25 ns

tAVWL

tAVEL

tAS

Address Valid to Write Enable or Chip Enable

Low Min 0 0 0 ns

tWLAX

tELAX

tAH

Write Enable or Chip Enable Low to Address

Transition Min454545ns

tGHWL tGHWL Output Enable High to Write Enable Low Min 0 0 0 ns

tGHEL tGHEL Output Enable High to Chip Enable Low Min 0 0 0 ns

tWHRL(1)

tEHRL

tBUSY Program/Erase Valid to RB Low Max 0 0 0 ns

tVCHEL

tVCHWL

tVCS VCC High to Chip Enable Low Min 50 50 50 μs

1. Sampled only, not 100% tested.

M29 W640G H, M29W640GL, M29W6 40GT, M 29W64 0GB DC and AC parameters

53/90

Fig ur e 17. Reset/Blo ck Temporary Unprotect AC wave fo rm s

Figure 18. Accelera te d program timing wavefo rm s

AI02931B

RP tPLPX

tPHWL, tPHEL, tPHGL

tPLYH

tPHPHH

E, G

tRHWL, tRHEL, tRHGL

AI05563

VPP/WP

VPP

VIL or VIH tVHVPP tVHVPP

Table 20. Reset/B lock Temporary Unprotect AC ch aracte ri stics

Symbol Alt Parameter M29W640G T, M29W640GB,

M29W640GH, M29W640GL Unit

tPHWL(1)

tPHEL

tPHGL(1)

tRH

RP High to Write Enable Low, Chip Enable Low,

Output Enable Low Min 50 ns

tRHWL(1)

tRHEL(1)

tRHGL(1)

tRB

RB High to Write Enable Low, Chip Enable Low,

Output Enable Low Min 0 ns

tPLPX tRP RP pulse width Min 500 ns

tPLYH tREADY RP Low to read mode Max 50 μs

tPHPHH(1)(2) tVIDR RP rise time to VID Min 500 ns

tVHVPP(1) VPP rise and fall time Min 500 ns

1. Sampled only, not 100% tested.

2. For fast program operations using VPP/WP at 12 V.

DC and AC param eters M29 W640G H, M29 W640G L , M29W6 40GT, M 29W64 0GB

54/90

Figure 19. Dat a polling AC waveforms

1. DQ7 returns valid data bit when the ongoing Program or Erase command is completed.

2. See Table 21: Data polling and data toggle AC characteristics and Table 18: Read AC characteristics for details on the

timings.

Figure 20. Toggle/alternat i ve toggl e bit polling AC wav ef orm s (8-bit m ode)

1. DQ6 stops toggling when the ongoing Program or Erase command is completed. DQ2 stops toggling when the ongoing

Chip Erase or Block Erase command is completed.

2. See Table 21: Data polling and data toggle AC characteristics and Table 18: Read AC characteristics for details on the

timings.

AI1278

DQ7

DQ7 DQ7=

Valid data

DQ6-DQ0 DQ6-DQ0=

Output flag

DATA

DATA DQ6-DQ0=

Valid data

Hi-Z

R/B

tWHEH

tGLQV

tEHQZ

tGHQZ

tWHGL2

tELQV

tWHWH1 or tWHWH2

tWHRL

AI1278

A0-A20/

A–1

DQ6/DQ2 Toggle Toggle Toggle Stop

toggling Output

Valid

tGHAX tAXGL

tEHAX tAVEL

tEHEL2

tWHGL2

tGHGL2 tGHGL2

Data

R/B

tWHDX tGLQV tELQV

tWHRL

M29 W640G H, M29W640GL, M29W6 40GT, M 29W64 0GB DC and AC parameters

55/90

Table 21. D ata polling and data toggle AC characteristics

Symbol Alt Parameter

M29W640GT, M29W640GB,

M29W640GH, M29W640GL Unit

60 70 90

tAXGL tASO

Address setup time to Output Enable Low

during toggle bit polling Min 10 10 10 ns

tGHAX

tEHAX

tAHT

Address hold time from Output Enable during

toggle bit polling Min 10 10 10 ns

tEHEL2 tCEPH Chip Enable High during toggle bit polling Min 10 10 10 ns

tWHGL2

tGHGL2

tOEH

Output hold time during data and toggle bit

polling Min 20 20 20 ns

Pack ag e mech anic al M29 W640G H, M29 W640G L , M29W6 40GT, M 29W64 0GB

56/90

8 Package mechanical

To meet environmental requirements, Numonyx offers these devices in RoHS compliant

packages, which are lead-free. The category of second level interconnect is marked on the

package and on the inner box label, in compliance with JEDEC Standard JESD97. The

maximum ratings related to soldering conditions are also marked on the inner box label.

Fig u re 21. TSOP4 8 –48 lead plastic th in small outl ine, 12 x 2 0 mm, package outline, top vi ew

1. Drawing is not to scale.

TSOP-G

DIE

LA1 α

Table 22. TSOP48 – 48 lead p lastic thin small o utline, 12 x 20 mm, packa g e m e chani cal da ta

Symbol millimeters inches

Typ Min Max Typ Min Max

A1.200.047

A1 0.10 0.05 0.15 0.004 0.002 0.006

A2 1.00 0.95 1.05 0.039 0.037 0.041

B 0.22 0.17 0.27 0.009 0.007 0.011

C 0.10 0.21 0.004 0.008

CP 0.10 0.004

D1 12.00 11.90 12.10 0.472 0.468 0.476

E 20.00 19.80 20.20 0.787 0.779 0.795

E1 18.40 18.30 18.50 0.724 0.720 0.728

e 0.50 – – 0.020 – –

L 0.60 0.50 0.70 0.024 0.020 0.028

L1 0.80 0.031

α3° 0° 5° 3° 0° 5°

M29 W640G H, M29W 640GL, M29 W640 GT , M29W 640GB Package mecha n ical

57/90

Fig u re 22. TSOP5 6 – 56 lead plastic thin small o utline, 14 x 20 mm packag e outline, top vi ew

1. Drawing is not to scale.

TSOP-K

DIE

LA1 α

1 56

Table 23. TSOP56 – 56 lead p lastic thin small o utline, 14 x 20 mm, packa g e m e chani cal da ta

Symbol millimeters inches

Typ Min Max Typ Min Max

A1.200.047

A1 0.10 0.05 0.15 0.004 0.002 0.006

A2 1.00 0.95 1.05 0.039 0.037 0.041

B 0.22 0.17 0.27 0.009 0.007 0.011

C 0.10 0.21 0.004 0.008

CP 0.10 0.004

D1 14.00 13.90 14.10 0.551 0.547 0.555

E 20.00 19.80 20.20 0.787 0.780 0.795

E1 18.40 18.30 18.50 0.724 0.720 0.728

e 0.50 – – 0.020 – –

L 0.60 0.50 0.70 0.024 0.020 0.028

α3° 0° 5° 3° 0° 5°

Pack ag e mech anic al M29 W640G H, M29 W640G L , M29W6 40GT, M 29W64 0GB

58/90

Figure 23. TFBGA48 6 x 8 mm-6 x 8 active ball array, 0.8 mm pitch, package outline, bottom view

1. Drawing is not to scale.

E1E

BGA-Z32

ddd

FE SD

BALL "A1"

Table 24. TFBGA48 6x8mm - 6x8 active ball array, 0.8mm pitch, package mechanical data

Symbol millimeters inches

Typ Min Max Typ Min Max

A1.200.047

A1 0.26 0.010

A2 0.90 0.035

b 0.35 0.45 0.014 0.018

D 6.00 5.90 6.10 0.236 0.232 0.240

D1 4.00 – – 0.157 – –

ddd 0.10 0.004

E 8.00 7.90 8.10 0.315 0.311 0.319

E1 5.60 – – 0.220 – –

e0.80– –0.031––

FD 1.00 – – 0.039 – –

FE 1.20 – – 0.047 – –

SD 0.40 – – 0.016 – –

SE 0.40 – – 0.016 – –

M29 W640G H, M29W 640GL, M29 W640 GT , M29W 640GB Package mecha n ical

59/90

Fig ur e 24. TB G A64 10 x 13 m m -8 x 8 acti ve ball array, 1 m m pitch , pack ag e outl ine, bottom view

1. Drawing is not to scale.

E1E

BGA-Z23

ddd

BALL "A1"

Table 25. TBGA64 10 x 13 mm - 8 x 8 active ball array, 1 mm pitch, package mechanical data

Symbol millimeters inches

Typ Min Max Typ Min Max

A 1.20 0.0472

A1 0.30 0.20 0.35 0.012 0.008 0.014

A2 0.80 0.031

b 0.35 0.50 0.014 0.020

D 10.00 9.90 10.10 0.394 0.390 0.398

D1 7.00 – – 0.276 – –

ddd 0.10 0.004

e 1.00 – – 0.039 – –

E 13.00 12.90 13.10 0.512 0.508 0.516

E1 7.00 – – 0.276 – –

FD 1.50 – – 0.059 – –

FE 3.00 – – 0.118 – –

SD 0.50 – – 0.020 – –

SE 0.50 – – 0.020 – –

Pack ag e mech anic al M29 W640G H, M29 W640G L , M29W6 40GT, M 29W64 0GB

60/90

Figure 25. FBGA64 11 x 13 mm - 8 x 8 active ball array, 1 mm pitch, p ackage outline, bottom view

1. Drawing is not to scale.

E1E

BGA-Z23

ddd

BALL "A1"

Table 26. FBGA64 11 x 13 mm—8 x 8 ac tive ba ll array, 1 mm pi tch , pack ag e mech anic al d ata

Symbol millimeters inches

Typ Min Max Typ Min Max

A — — 1.40 — — 0.055

A1 0.48 0.43 0.53 0.018 0.016

A2 0.80 — — 0.031 — —

b — 0.55 0.65 — 0.021 0.025

D 11.00 10.90 11.10 0.433 0.429 0.437

D1 7.00 — — 0.275 — —

ddd — — 0.15 — — 0.0059

e 1.00 — — 0.039 — —

E 13.0 12.90 13.10 0.511 0.507 0.515

E1 7.00 — — 0.275 — —

FD 2.00 — — 0.078 — —

FE 3.00 — — 0.118 — —

SD 0.50 — — 0.0196 — —

SE 0.50 — — 0.0196 — —

M29 W640G H, M29W 640G L , M29W6 40GT, M 29W64 0GB Orderi n g i n fo rmati o n

61/90

9 Ordering information

Note: This product is al so avai l able with the exten ded block fac t ory loc ked. For a list of ava i l abl e

options (speed, package, etc.) or for further information on any aspect of this device, please

contact your nearest Numonyx sales office.

Table 27. Ordering informat io n scheme

Example: M29W640GT 70 NA 6 F

Device type

M29

O per a t in g vo l tag e

W = VCC = 2.7 to 3.6 V

Device function

640G = 64-Mbit (x8/x16), boot block, uniform or boot

block

Array matrix

T = top boot

B = bottom boot

H = last block protected by VPP/WP

L = first block protected by VPP/WP

Speed

60 = 60 ns

70 = 70 ns

90 = 90 ns

7A = 70 ns Automotive -40 °C to 85 °C Certified Part,

used in conjiuction with temperature range option 6 to

distinguish the Automotive Part.

Package

NA = TSOP48: 12 x 20 mm

NB = TSOP56: 14 x 20 mm(1)

1. Packages only available upon request.

ZA= TFBGA48: 6 x 8 mm - 0.8 mm pitch

ZF = TBGA64: 10 x 13 mm -1 mm pitch(1)

ZS = FBGA64: 11 x 13 mm, 1 mm pitch

Temperat u re ran ge

6 = −40 to 85 °C

3 = −40 to 125 °C

Option

E = RoHS package, standard packing

F = RoHS package, tape & reel packing

Block address es M29 W640G H, M29 W640GL, M2 9W640 GT , M29W 640GB

62/90

Appendix A Block addresses

Tabl e 28. M29 W640GH an d M2 9W640 GL block ad d resse s

Block Kbytes/Kwords Protection block group (x8) (x16)

0 64/32 Protection group 000000h–00FFFFh(1) 000000h–007FFFh(1)

1 64/32 Protection group 010000h–01FFFFh(1) 008000h–00FFFFh

2 64/32 Protection group 020000h–02FFFFh(1) 010000h–017FFFh(1)

3 64/32 Protection group 030000h–03FFFFh(1) 018000h–01FFFFh(1)

4 64/32

Protection group

040000h–04FFFFh 020000h–027FFFh

5 64/32 050000h–05FFFFh 028000h–02FFFFh

6 64/32 060000h–06FFFFh 030000h–037FFFh

7 64/32 070000h–07FFFFh 038000h–03FFFFh

8 64/32

Protection group

080000h–08FFFFh 040000h–047FFFh

9 64/32 090000h–09FFFFh 048000h–04FFFFh

10 64/32 0A0000h–0AFFFFh 050000h–057FFFh

11 64/32 0B0000h–0BFFFFh 058000h–05FFFFh

12 64/32

Protection group

0C0000h–0CFFFFh 060000h–067FFFh

13 64/32 0D0000h–0DFFFFh 068000h–06FFFFh

14 64/32 0E0000h–0EFFFFh 070000h–077FFFh

15 64/32 0F0000h–0FFFFFh 078000h–07FFFFh

16 64/32

Protection group

100000h–10FFFFh 080000h–087FFFh

17 64/32 110000h–11FFFFh 088000h–08FFFFh

18 64/32 120000h–12FFFFh 090000h–097FFFh

19 64/32 130000h–13FFFFh 098000h–09FFFFh

20 64/32

Protection group

140000h–14FFFFh 0A0000h–0A7FFFh

21 64/32 150000h–15FFFFh 0A8000h–0AFFFFh

22 64/32 160000h–16FFFFh 0B0000h–0B7FFFh

23 64/32 170000h–17FFFFh 0B8000h–0BFFFFh

24 64/32

Protection group

180000h–18FFFFh 0C0000h–0C7FFFh

25 64/32 190000h–19FFFFh 0C8000h–0CFFFFh

26 64/32 1A0000h–1AFFFFh 0D0000h–0D7FFFh

27 64/32 1B0000h–1BFFFFh 0D8000h–0DFFFFh

28 64/32

Protection group

1C0000h–1CFFFFh 0E0000h–0E7FFFh

29 64/32 1D0000h–1DFFFFh 0E8000h–0EFFFFh

30 64/32 1E0000h–1EFFFFh 0F0000h–0F7FFFh

31 64/32 1F0000h–1FFFFFh 0F8000h–0FFFFFh

M29 W640G H, M29W 640GL, M29 W640 GT , M29W 640GB Block ad d resse s

63/90

32 64/32

Protection group

200000h–20FFFFh 100000h–107FFFh

33 64/32 210000h–21FFFFh 108000h–10FFFFh

34 64/32 220000h–22FFFFh 110000h–117FFFh

35 64/32 230000h–23FFFFh 118000h–11FFFFh

36 64/32

Protection group

240000h–24FFFFh 120000h–127FFFh

37 64/32 250000h–25FFFFh 128000h–12FFFFh

38 64/32 260000h–26FFFFh 130000h–137FFFh

39 64/32 270000h–27FFFFh 138000h–13FFFFh

40 64/32

Protection group

280000h–28FFFFh 140000h–147FFFh

41 64/32 290000h–29FFFFh 148000h–14FFFFh

42 64/32 2A0000h–2AFFFFh 150000h–157FFFh

43 64/32 2B0000h–2BFFFFh 158000h–15FFFFh

44 64/32

Protection group

2C0000h–2CFFFFh 160000h–167FFFh

45 64/32 2D0000h–2DFFFFh 168000h–16FFFFh

46 64/32 2E0000h–2EFFFFh 170000h–177FFFh

47 64/32 2F0000h–2FFFFFh 178000h–17FFFFh

48 64/32

Protection group

300000h–30FFFFh 180000h–187FFFh

49 64/32 310000h–31FFFFh 188000h–18FFFFh

50 64/32 320000h–32FFFFh 190000h–197FFFh

51 64/32 330000h–33FFFFh 198000h–19FFFFh

52 64/32

Protection group

340000h–34FFFFh 1A0000h–1A7FFFh

53 64/32 350000h–35FFFFh 1A8000h–1AFFFFh

54 64/32 360000h–36FFFFh 1B0000h–1B7FFFh

55 64/32 370000h–37FFFFh 1B8000h–1BFFFFh

56 64/32

Protection group

380000h–38FFFFh 1C0000h–1C7FFFh

57 64/32 390000h–39FFFFh 1C8000h–1CFFFFh

58 64/32 3A0000h–3AFFFFh 1D0000h–1D7FFFh

59 64/32 3B0000h–3BFFFFh 1D8000h–1DFFFFh

60 64/32

Protection group

3C0000h–3CFFFFh 1E0000h–1E7FFFh

61 64/32 3D0000h–3DFFFFh 1E8000h–1EFFFFh

62 64/32 3E0000h–3EFFFFh 1F0000h–1F7FFFh

63 64/32 3F0000h–3FFFFFh 1F8000h–1FFFFFh

Tabl e 28. M29W640GH and M29W640 GL b lock ad d resse s (continued)

Block Kbytes/Kwords Protection block group (x8) (x16)

Block address es M29 W640G H, M29 W640GL, M2 9W640 GT , M29W 640GB

64/90

64 64/32

Protection group

400000h–40FFFFh 200000h–207FFFh

65 64/32 410000h–41FFFFh 208000h–20FFFFh

66 64/32 420000h–42FFFFh 210000h–217FFFh

67 64/32 430000h–43FFFFh 218000h–21FFFFh

68 64/32

Protection group

440000h–44FFFFh 220000h–227FFFh

69 64/32 450000h–45FFFFh 228000h–22FFFFh

70 64/32 460000h–46FFFFh 230000h–237FFFh

71 64/32 470000h–47FFFFh 238000h–23FFFFh

72 64/32

Protection group

480000h–48FFFFh 240000h–247FFFh

73 64/32 490000h–49FFFFh 248000h–24FFFFh

74 64/32 4A0000h–4AFFFFh 250000h–257FFFh

75 64/32 4B0000h–4BFFFFh 258000h–25FFFFh

76 64/32

Protection group

4C0000h–4CFFFFh 260000h–267FFFh

77 64/32 4D0000h–4DFFFFh 268000h–26FFFFh

78 64/32 4E0000h–4EFFFFh 270000h–277FFFh

79 64/32 4F0000h–4FFFFFh 278000h–27FFFFh

80 64/32

Protection group

500000h–50FFFFh 280000h–287FFFh

81 64/32 510000h–51FFFFh 288000h–28FFFFh

82 64/32 520000h–52FFFFh 290000h–297FFFh

83 64/32 530000h–53FFFFh 298000h–29FFFFh

84 64/32

Protection group

540000h–54FFFFh 2A0000h–2A7FFFh

85 64/32 550000h–55FFFFh 2A8000h–2AFFFFh

86 64/32 560000h–56FFFFh 2B0000h–2B7FFFh

87 64/32 570000h–57FFFFh 2B8000h–2BFFFFh

88 64/32

Protection group

580000h–58FFFFh 2C0000h–2C7FFFh

89 64/32 590000h–59FFFFh 2C8000h–2CFFFFh

90 64/32 5A0000h–5AFFFFh 2D0000h–2D7FFFh

91 64/32 5B0000h–5BFFFFh 2D8000h–2DFFFFh

92 64/32

Protection group

5C0000h–5CFFFFh 2E0000h–2E7FFFh

93 64/32 5D0000h–5DFFFFh 2E8000h–2EFFFFh

94 64/32 5E0000h–5EFFFFh 2F0000h–2F7FFFh

95 64/32 5F0000h–5FFFFFh 2F8000h–2FFFFFh

Tabl e 28. M29W640GH and M29W640 GL b lock ad d resse s (continued)

Block Kbytes/Kwords Protection block group (x8) (x16)

M29 W640G H, M29W 640GL, M29 W640 GT , M29W 640GB Block ad d resse s

65/90

96 64/32

Protection group

600000h–60FFFFh 300000h–307FFFh

97 64/32 610000h–61FFFFh 308000h–30FFFFh

98 64/32 620000h–62FFFFh 310000h–317FFFh

99 64/32 630000h–63FFFFh 318000h–31FFFFh

100 64/32

Protection group

640000h–64FFFFh 320000h–327FFFh

101 64/32 650000h–65FFFFh 328000h–32FFFFh

102 64/32 660000h–66FFFFh 330000h–337FFFh

103 64/32 670000h–67FFFFh 338000h–33FFFFh

104 64/32

Protection group

680000h–68FFFFh 340000h–347FFFh

105 64/32 690000h–69FFFFh 348000h–34FFFFh

106 64/32 6A0000h–6AFFFFh 350000h–357FFFh

107 64/32 6B0000h–6BFFFFh 358000h–35FFFFh

108 64/32

Protection group

6C0000h–6CFFFFh 360000h–367FFFh

109 64/32 6D0000h–6DFFFFh 368000h–36FFFFh

110 64/32 6E0000h–6EFFFFh 370000h–377FFFh

111 64/32 6F0000h–6FFFFFh 378000h–37FFFFh

112 64/32

Protection group

700000h–70FFFFh 380000h–387FFFh

113 64/32 710000h–71FFFFh 388000h–38FFFFh

114 64/32 720000h–72FFFFh 390000h–397FFFh

115 64/32 730000h–73FFFFh 398000h–39FFFFh

116 64/32

Protection group

740000h–74FFFFh 3A0000h–3A7FFFh

117 64/32 750000h–75FFFFh 3A8000h–3AFFFFh

118 64/32 760000h–76FFFFh 3B0000h–3B7FFFh

119 64/32 770000h–77FFFFh 3B8000h–3BFFFFh

120 64/32

Protection group

780000h–78FFFFh 3C0000h–3C7FFFh

121 64/32 790000h–79FFFFh 3C8000h–3CFFFFh

122 64/32 7A0000h–7AFFFFh 3D0000h–3D7FFFh

123 64/32 7B0000h–7BFFFFh 3D8000h–3DFFFFh

124 64/32 Protection group 7C0000h–7CFFFFh 3E0000h–3E7FFFh

125 64/32 Protection group 7D0000h–7DFFFFh 3E8000h–3EFFFFh

126 64/32 Protection group 7E0000h–7EFFFFh 3F0000h–3F7FFFh

127 64/32 Protection group 7F0000h–7FFFFFh 3F8000h–3FFFFFh

1. Used as the Extended Block Addresses in Extended Block mode.

Tabl e 28. M29W640GH and M29W640 GL b lock ad d resse s (continued)

Block Kbytes/Kwords Protection block group (x8) (x16)

Block address es M29 W640G H, M29 W640GL, M2 9W640 GT , M29W 640GB

66/90

Tabl e 29. Top boot block addres ses, M29W640GT

Block Kbytes/Kwords Protection block group (x8) (x16)

0 64/32

Protection group

000000h–00FFFFh(1) 000000h–007FFFh(1)

1 64/32 010000h–01FFFFh(1) 008000h–00FFFFh(1)

2 64/32 020000h–02FFFFh(1) 010000h–017FFFh(1)

3 64/32 030000h–03FFFFh(1) 018000h–01FFFFh(1)

4 64/32

Protection group

040000h–04FFFFh 020000h–027FFFh

5 64/32 050000h–05FFFFh 028000h–02FFFFh

6 64/32 060000h–06FFFFh 030000h–037FFFh

7 64/32 070000h–07FFFFh 038000h–03FFFFh

8 64/32

Protection group

080000h–08FFFFh 040000h–047FFFh

9 64/32 090000h–09FFFFh 048000h–04FFFFh

10 64/32 0A0000h–0AFFFFh 050000h–057FFFh

11 64/32 0B0000h–0BFFFFh 058000h–05FFFFh

12 64/32

Protection group

0C0000h–0CFFFFh 060000h–067FFFh

13 64/32 0D0000h–0DFFFFh 068000h–06FFFFh

14 64/32 0E0000h–0EFFFFh 070000h–077FFFh

15 64/32 0F0000h–0FFFFFh 078000h–07FFFFh

16 64/32

Protection group

100000h–10FFFFh 080000h–087FFFh

17 64/32 110000h–11FFFFh 088000h–08FFFFh

18 64/32 120000h–12FFFFh 090000h–097FFFh

19 64/32 130000h–13FFFFh 098000h–09FFFFh

20 64/32

Protection group

140000h–14FFFFh 0A0000h–0A7FFFh

21 64/32 150000h–15FFFFh 0A8000h–0AFFFFh

22 64/32 160000h–16FFFFh 0B0000h–0B7FFFh

23 64/32 170000h–17FFFFh 0B8000h–0BFFFFh

24 64/32

Protection group

180000h–18FFFFh 0C0000h–0C7FFFh

25 64/32 190000h–19FFFFh 0C8000h–0CFFFFh

26 64/32 1A0000h–1AFFFFh 0D0000h–0D7FFFh

27 64/32 1B0000h–1BFFFFh 0D8000h–0DFFFFh

28 64/32

Protection group

1C0000h–1CFFFFh 0E0000h–0E7FFFh

29 64/32 1D0000h–1DFFFFh 0E8000h–0EFFFFh

30 64/32 1E0000h–1EFFFFh 0F0000h–0F7FFFh

31 64/32 1F0000h–1FFFFFh 0F8000h–0FFFFFh

M29 W640G H, M29W 640GL, M29 W640 GT , M29W 640GB Block ad d resse s

67/90

32 64/32

Protection group

200000h–20FFFFh 100000h–107FFFh

33 64/32 210000h–21FFFFh 108000h–10FFFFh

34 64/32 220000h–22FFFFh 110000h–117FFFh

35 64/32 230000h–23FFFFh 118000h–11FFFFh

36 64/32

Protection group

240000h–24FFFFh 120000h–127FFFh

37 64/32 250000h–25FFFFh 128000h–12FFFFh

38 64/32 260000h–26FFFFh 130000h–137FFFh

39 64/32 270000h–27FFFFh 138000h–13FFFFh

40 64/32

Protection group

280000h–28FFFFh 140000h–147FFFh

41 64/32 290000h–29FFFFh 148000h–14FFFFh

42 64/32 2A0000h–2AFFFFh 150000h–157FFFh

43 64/32 2B0000h–2BFFFFh 158000h–15FFFFh

44 64/32

Protection group

2C0000h–2CFFFFh 160000h–167FFFh

45 64/32 2D0000h–2DFFFFh 168000h–16FFFFh

46 64/32 2E0000h–2EFFFFh 170000h–177FFFh

47 64/32 2F0000h–2FFFFFh 178000h–17FFFFh

48 64/32

Protection group

300000h–30FFFFh 180000h–187FFFh

49 64/32 310000h–31FFFFh 188000h–18FFFFh

50 64/32 320000h–32FFFFh 190000h–197FFFh

51 64/32 330000h–33FFFFh 198000h–19FFFFh

52 64/32

Protection group

340000h–34FFFFh 1A0000h–1A7FFFh

53 64/32 350000h–35FFFFh 1A8000h–1AFFFFh

54 64/32 360000h–36FFFFh 1B0000h–1B7FFFh

55 64/32 370000h–37FFFFh 1B8000h–1BFFFFh

56 64/32

Protection group

380000h–38FFFFh 1C0000h–1C7FFFh

57 64/32 390000h–39FFFFh 1C8000h–1CFFFFh

58 64/32 3A0000h–3AFFFFh 1D0000h–1D7FFFh

59 64/32 3B0000h–3BFFFFh 1D8000h–1DFFFFh

60 64/32

Protection group

3C0000h–3CFFFFh 1E0000h–1E7FFFh

61 64/32 3D0000h–3DFFFFh 1E8000h–1EFFFFh

62 64/32 3E0000h–3EFFFFh 1F0000h–1F7FFFh

63 64/32 3F0000h–3FFFFFh 1F8000h–1FFFFFh

Tabl e 29. Top boot block addres ses, M29W640GT (co n tinu ed )

Block Kbytes/Kwords Protection block group (x8) (x16)

Block address es M29 W640G H, M29 W640GL, M2 9W640 GT , M29W 640GB

68/90

64 64/32

Protection group

400000h–40FFFFh 200000h–207FFFh

65 64/32 410000h–41FFFFh 208000h–20FFFFh

66 64/32 420000h–42FFFFh 210000h–217FFFh

67 64/32 430000h–43FFFFh 218000h–21FFFFh

68 64/32

Protection group

440000h–44FFFFh 220000h–227FFFh

69 64/32 450000h–45FFFFh 228000h–22FFFFh

70 64/32 460000h–46FFFFh 230000h–237FFFh

71 64/32 470000h–47FFFFh 238000h–23FFFFh

72 64/32

Protection group

480000h–48FFFFh 240000h–247FFFh

73 64/32 490000h–49FFFFh 248000h–24FFFFh

74 64/32 4A0000h–4AFFFFh 250000h–257FFFh

75 64/32 4B0000h–4BFFFFh 258000h–25FFFFh

76 64/32

Protection group

4C0000h–4CFFFFh 260000h–267FFFh

77 64/32 4D0000h–4DFFFFh 268000h–26FFFFh

78 64/32 4E0000h–4EFFFFh 270000h–277FFFh

79 64/32 4F0000h–4FFFFFh 278000h–27FFFFh

80 64/32

Protection group

500000h–50FFFFh 280000h–287FFFh

81 64/32 510000h–51FFFFh 288000h–28FFFFh

82 64/32 520000h–52FFFFh 290000h–297FFFh

83 64/32 530000h–53FFFFh 298000h–29FFFFh

84 64/32

Protection group

540000h–54FFFFh 2A0000h–2A7FFFh

85 64/32 550000h–55FFFFh 2A8000h–2AFFFFh

86 64/32 560000h–56FFFFh 2B0000h–2B7FFFh

87 64/32 570000h–57FFFFh 2B8000h–2BFFFFh

88 64/32

Protection group

580000h–58FFFFh 2C0000h–2C7FFFh

89 64/32 590000h–59FFFFh 2C8000h–2CFFFFh

90 64/32 5A0000h–5AFFFFh 2D0000h–2D7FFFh

91 64/32 5B0000h–5BFFFFh 2D8000h–2DFFFFh

92 64/32

Protection group

5C0000h–5CFFFFh 2E0000h–2E7FFFh

93 64/32 5D0000h–5DFFFFh 2E8000h–2EFFFFh

94 64/32 5E0000h–5EFFFFh 2F0000h–2F7FFFh

95 64/32 5F0000h–5FFFFFh 2F8000h–2FFFFFh

Tabl e 29. Top boot block addres ses, M29W640GT (co n tinu ed )

Block Kbytes/Kwords Protection block group (x8) (x16)

M29 W640G H, M29W 640GL, M29 W640 GT , M29W 640GB Block ad d resse s

69/90

96 64/32

Protection group

600000h–60FFFFh 300000h–307FFFh

97 64/32 610000h–61FFFFh 308000h–30FFFFh

98 64/32 620000h–62FFFFh 310000h–317FFFh

99 64/32 630000h–63FFFFh 318000h–31FFFFh

100 64/32

Protection group

640000h–64FFFFh 320000h–327FFFh

101 64/32 650000h–65FFFFh 328000h–32FFFFh

102 64/32 660000h–66FFFFh 330000h–337FFFh

103 64/32 670000h–67FFFFh 338000h–33FFFFh

104 64/32

Protection group

680000h–68FFFFh 340000h–347FFFh

105 64/32 690000h–69FFFFh 348000h–34FFFFh

106 64/32 6A0000h–6AFFFFh 350000h–357FFFh

107 64/32 6B0000h–6BFFFFh 358000h–35FFFFh

108 64/32

Protection group

6C0000h–6CFFFFh 360000h–367FFFh

109 64/32 6D0000h–6DFFFFh 368000h–36FFFFh

110 64/32 6E0000h–6EFFFFh 370000h–377FFFh

111 64/32 6F0000h–6FFFFFh 378000h–37FFFFh

112 64/32

Protection group

700000h–70FFFFh 380000h–387FFFh

113 64/32 710000h–71FFFFh 388000h–38FFFFh

114 64/32 720000h–72FFFFh 390000h–397FFFh

115 64/32 730000h–73FFFFh 398000h–39FFFFh

116 64/32

Protection group

740000h–74FFFFh 3A0000h–3A7FFFh

117 64/32 750000h–75FFFFh 3A8000h–3AFFFFh

118 64/32 760000h–76FFFFh 3B0000h–3B7FFFh

119 64/32 770000h–77FFFFh 3B8000h–3BFFFFh

120 64/32

Protection group

780000h–78FFFFh 3C0000h–3C7FFFh

121 64/32 790000h–79FFFFh 3C8000h–3CFFFFh

122 64/32 7A0000h–7AFFFFh 3D0000h–3D7FFFh

123 64/32 7B0000h–7BFFFFh 3D8000h–3DFFFFh

124 64/32

Protection group

7C0000h–7CFFFFh 3E0000h–3E7FFFh

125 64/32 7D0000h–7DFFFFh 3E8000h–3EFFFFh

126 64/32 7E0000h–7EFFFFh 3F0000h–3F7FFFh

127 8/4 Protection group 7F0000h–7F1FFFh 3F8000h–3F8FFFh

128 8/4 Protection group 7F2000h–7F3FFFh 3F9000h–3F9FFFh

129 8/4 Protection group 7F4000h–7F5FFFh 3FA000h–3FAFFFh

130 8/4 Protection group 7F6000h–7F7FFFh 3FB000h–3FBFFFh

Tabl e 29. Top boot block addres ses, M29W640GT (co n tinu ed )

Block Kbytes/Kwords Protection block group (x8) (x16)

Block address es M29 W640G H, M29 W640GL, M2 9W640 GT , M29W 640GB

70/90

131 8/4 Protection group 7F8000h–7F9FFFh 3FC000h–3FCFFFh

132 8/4 Protection group 7FA000h–7FBFFFh 3FD000h–3FDFFFh

133 8/4 Protection group 7FC000h–7FDFFFh 3FE000h–3FEFFFh

134 8/4 Protection group 7FE000h–7FFFFFh 3FF000h–3FFFFFh

1. Used as the extended block addresses in extended block mode.

Table 30. Bottom boot block addresses, M29W640GB

Block Kbytes/Kwords Protection block group (x8) (x16)

0 8/4 Protection group 000000h-001FFFh(1) 000000h–000FFFh(1)

1 8/4 Protection group 002000h-003FFFh(1) 001000h–001FFFh(1)

2 8/4 Protection group 004000h-005FFFh(1) 002000h–002FFFh(1)

3 8/4 Protection group 006000h-007FFFh(1) 003000h–003FFFh(1)

4 8/4 Protection group 008000h-009FFFh 004000h–004FFFh

5 8/4 Protection group 00A000h-00BFFFh 005000h–005FFFh

6 8/4 Protection group 00C000h-00DFFFh 006000h–006FFFh

7 8/4 Protection group 00E000h-00FFFFh 007000h–007FFFh

8 64/32

Protection group

010000h-01FFFFh 008000h–00FFFFh

9 64/32 020000h-02FFFFh 010000h–017FFFh

10 64/32 030000h-03FFFFh 018000h–01FFFFh

11 64/32

Protection group

040000h-04FFFFh 020000h–027FFFh

12 64/32 050000h-05FFFFh 028000h–02FFFFh

13 64/32 060000h-06FFFFh 030000h–037FFFh

14 64/32 070000h-07FFFFh 038000h–03FFFFh

15 64/32

Protection group

080000h-08FFFFh 040000h–047FFFh

16 64/32 090000h-09FFFFh 048000h–04FFFFh

17 64/32 0A0000h-0AFFFFh 050000h–057FFFh

18 64/32 0B0000h-0BFFFFh 058000h–05FFFFh

19 64/32

Protection group

0C0000h-0CFFFFh 060000h–067FFFh

20 64/32 0D0000h-0DFFFFh 068000h–06FFFFh

21 64/32 0E0000h-0EFFFFh 070000h–077FFFh

22 64/32 0F0000h-0FFFFFh 078000h–07FFFFh

23 64/32

Protection group

100000h-10FFFFh 080000h–087FFFh

24 64/32 110000h-11FFFFh 088000h–08FFFFh

25 64/32 120000h-12FFFFh 090000h–097FFFh

26 64/32 130000h-13FFFFh 098000h–09FFFFh

Tabl e 29. Top boot block addres ses, M29W640GT (co n tinu ed )

Block Kbytes/Kwords Protection block group (x8) (x16)

M29 W640G H, M29W 640GL, M29 W640 GT , M29W 640GB Block ad d resse s

71/90

27 64/32

Protection group

140000h-14FFFFh 0A0000h–0A7FFFh

28 64/32 150000h-15FFFFh 0A8000h–0AFFFFh

29 64/32 160000h-16FFFFh 0B0000h–0B7FFFh

30 64/32 170000h-17FFFFh 0B8000h–0BFFFFh

31 64/32

Protection group

180000h-18FFFFh 0C0000h–0C7FFFh

32 64/32 190000h-19FFFFh 0C8000h–0CFFFFh

33 64/32 1A0000h-1AFFFFh 0D0000h–0D7FFFh

34 64/32 1B0000h-1BFFFFh 0D8000h–0DFFFFh

35 64/32

Protection group

1C0000h-1CFFFFh 0E0000h–0E7FFFh

36 64/32 1D0000h-1DFFFFh 0E8000h–0EFFFFh

37 64/32 1E0000h-1EFFFFh 0F0000h–0F7FFFh

38 64/32 1F0000h-1FFFFFh 0F8000h–0FFFFFh

39 64/32

Protection group

200000h-20FFFFh 100000h–107FFFh

40 64/32 210000h-21FFFFh 108000h–10FFFFh

41 64/32 220000h-22FFFFh 110000h–117FFFh

42 64/32 230000h-23FFFFh 118000h–11FFFFh

43 64/32

Protection group

240000h-24FFFFh 120000h–127FFFh

44 64/32 250000h-25FFFFh 128000h–12FFFFh

45 64/32 260000h-26FFFFh 130000h–137FFFh

46 64/32 270000h-27FFFFh 138000h–13FFFFh

47 64/32

Protection group

280000h-28FFFFh 140000h–147FFFh

48 64/32 290000h-29FFFFh 148000h–14FFFFh

49 64/32 2A0000h-2AFFFFh 150000h–157FFFh

50 64/32 2B0000h-2BFFFFh 158000h–15FFFFh

51 64/32

Protection group

2C0000h-2CFFFFh 160000h–167FFFh

52 64/32 2D0000h-2DFFFFh 168000h–16FFFFh

53 64/32 2E0000h-2EFFFFh 170000h–177FFFh

54 64/32 2F0000h-2FFFFFh 178000h–17FFFFh

55 64/32

Protection group

300000h-30FFFFh 180000h–187FFFh

56 64/32 310000h-31FFFFh 188000h–18FFFFh

57 64/32 320000h-32FFFFh 190000h–197FFFh

58 64/32 330000h-33FFFFh 198000h–19FFFFh

Table 30. Bottom boot block addresses, M29W640GB (cont inu ed)

Block Kbytes/Kwords Protection block group (x8) (x16)

Block address es M29 W640G H, M29 W640GL, M2 9W640 GT , M29W 640GB

72/90

59 64/32

Protection group

340000h-34FFFFh 1A0000h–1A7FFFh

60 64/32 350000h-35FFFFh 1A8000h–1AFFFFh

61 64/32 360000h-36FFFFh 1B0000h–1B7FFFh

62 64/32 370000h-37FFFFh 1B8000h–1BFFFFh

63 64/32

Protection group

380000h-38FFFFh 1C0000h–1C7FFFh

64 64/32 390000h-39FFFFh 1C8000h–1CFFFFh

65 64/32 3A0000h-3AFFFFh 1D0000h–1D7FFFh

66 64/32 3B0000h-3BFFFFh 1D8000h–1DFFFFh

67 64/32

Protection group

3C0000h-3CFFFFh 1E0000h–1E7FFFh

68 64/32 3D0000h-3DFFFFh 1E8000h–1EFFFFh

69 64/32 3E0000h-3EFFFFh 1F0000h–1F7FFFh

70 64/32 3F0000h-3FFFFFh 1F8000h–1FFFFFh

71 64/32

Protection group

400000h-40FFFFh 200000h–207FFFh

72 64/32 410000h-41FFFFh 208000h–20FFFFh

73 64/32 420000h-42FFFFh 210000h–217FFFh

74 64/32 430000h-43FFFFh 218000h–21FFFFh

75 64/32

Protection group

440000h-44FFFFh 220000h–227FFFh

76 64/32 450000h-45FFFFh 228000h–22FFFFh

77 64/32 460000h-46FFFFh 230000h–237FFFh

78 64/32 470000h-47FFFFh 238000h–23FFFFh

79 64/32

Protection group

480000h-48FFFFh 240000h–247FFFh

80 64/32 490000h-49FFFFh 248000h–24FFFFh

81 64/32 4A0000h-4AFFFFh 250000h–257FFFh

82 64/32 4B0000h-4BFFFFh 258000h–25FFFFh

83 64/32

Protection group

4C0000h-4CFFFFh 260000h–267FFFh

84 64/32 4D0000h-4DFFFFh 268000h–26FFFFh

85 64/32 4E0000h-4EFFFFh 270000h–277FFFh

86 64/32 4F0000h-4FFFFFh 278000h–27FFFFh

87 64/32

Protection group

500000h-50FFFFh 280000h–287FFFh

88 64/32 510000h-51FFFFh 288000h–28FFFFh

89 64/32 520000h-52FFFFh 290000h–297FFFh

90 64/32 530000h-53FFFFh 298000h–29FFFFh

Table 30. Bottom boot block addresses, M29W640GB (cont inu ed)

Block Kbytes/Kwords Protection block group (x8) (x16)

M29 W640G H, M29W 640GL, M29 W640 GT , M29W 640GB Block ad d resse s

73/90

91 64/32

Protection group

540000h-54FFFFh 2A0000h–2A7FFFh

92 64/32 550000h-55FFFFh 2A8000h–2AFFFFh

93 64/32 560000h-56FFFFh 2B0000h–2B7FFFh

94 64/32 570000h-57FFFFh 2B8000h–2BFFFFh

95 64/32

Protection group

580000h-58FFFFh 2C0000h–2C7FFFh

96 64/32 590000h-59FFFFh 2C8000h–2CFFFFh

97 64/32 5A0000h-5AFFFFh 2D0000h–2D7FFFh

98 64/32 5B0000h-5BFFFFh 2D8000h–2DFFFFh

99 64/32

Protection group

5C0000h-5CFFFFh 2E0000h–2E7FFFh

100 64/32 5D0000h-5DFFFFh 2E8000h–2EFFFFh

101 64/32 5E0000h-5EFFFFh 2F0000h–2F7FFFh

102 64/32 5F0000h-5FFFFFh 2F8000h–2FFFFFh

103 64/32

Protection group

600000h-60FFFFh 300000h–307FFFh

104 64/32 610000h-61FFFFh 308000h–30FFFFh

105 64/32 620000h-62FFFFh 310000h–317FFFh

106 64/32 630000h-63FFFFh 318000h–31FFFFh

107 64/32

Protection group

640000h-64FFFFh 320000h–327FFFh

108 64/32 650000h-65FFFFh 328000h–32FFFFh

109 64/32 660000h-66FFFFh 330000h–337FFFh

110 64/32 670000h-67FFFFh 338000h–33FFFFh

111 64/32

Protection group

680000h-68FFFFh 340000h–347FFFh

112 64/32 690000h-69FFFFh 348000h–34FFFFh

113 64/32 6A0000h-6AFFFFh 350000h–357FFFh

114 64/32 6B0000h-6BFFFFh 358000h–35FFFFh

115 64/32

Protection group

6C0000h-6CFFFFh 360000h–367FFFh

116 64/32 6D0000h-6DFFFFh 368000h–36FFFFh

117 64/32 6E0000h-6EFFFFh 370000h–377FFFh

118 64/32 6F0000h-6FFFFFh 378000h–37FFFFh

119 64/32

Protection group

700000h-70FFFFh 380000h–387FFFh

120 64/32 710000h-71FFFFh 388000h–38FFFFh

121 64/32 720000h-72FFFFh 390000h–397FFFh

122 64/32 730000h-73FFFFh 398000h–39FFFFh

Table 30. Bottom boot block addresses, M29W640GB (cont inu ed)

Block Kbytes/Kwords Protection block group (x8) (x16)

Block address es M29 W640G H, M29 W640GL, M2 9W640 GT , M29W 640GB

74/90

123 64/32

Protection group

740000h-74FFFFh 3A0000h–3A7FFFh

124 64/32 750000h-75FFFFh 3A8000h–3AFFFFh

125 64/32 760000h-76FFFFh 3B0000h–3B7FFFh

126 64/32 770000h-77FFFFh 3B8000h–3BFFFFh

127 64/32

Protection group

780000h-78FFFFh 3C0000h–3C7FFFh

128 64/32 790000h-79FFFFh 3C8000h–3CFFFFh

129 64/32 7A0000h-7AFFFFh 3D0000h–3D7FFFh

130 64/32 7B0000h-7BFFFFh 3D8000h–3DFFFFh

131 64/32

Protection group

7C0000h-7CFFFFh 3E0000h–3E7FFFh

132 64/32 7D0000h-7DFFFFh 3E8000h–3EFFFFh

133 64/32 7E0000h-7EFFFFh 3F0000h–3F7FFFh

134 64/32 7F0000h-7FFFFFh 3F8000h–3FFFFFh

1. Used as the extended block addresses in extended block mode.

Table 30. Bottom boot block addresses, M29W640GB (cont inu ed)

Block Kbytes/Kwords Protection block group (x8) (x16)

M29 W640G H, M29W 640GL, M29 W640 GT , M29W 640GB Com m o n flash interface (CFI)

75/90

Appendix B Common flash interface (CFI)

The common flash interface is a JEDEC approved, standardized data structure that can be

read from the Flash memory device. It allows a system software to query the device to

determine various electrical and timing parameters, density information and functions

supported by the memory. The system can interface easily with the device, enabling the

software to upgrade itself when necessary.

When the CFI Query command is issued the device enters CFI query mode and the data

structure is read from the memory. Tables 31, 32, 33, 34, 35, and 36, show the addresses

used to retrieve the data. The CFI data structure also contains a security area where a 64-

bit unique security number is written (see Table 36: Security code area). This area can be

accessed only in read mode by the final user. It is impossible to change the security number

after it has been written by Numonyx.

Tabl e 31. Query struct u re overv iew(1)

1. Query data are always presented on the lowest order data outputs.

Address Sub-section name Des cri ption

x16 x8

10h 20h CFI Query Identification String Command set ID and algorithm data offset

1Bh 36h System Interface Information Device timing & voltage information

27h 4Eh Device geometry definition Flash device layout

40h 80h Primary algorithm-specific extended

query table

Additional information specific to the

primary algorithm (optional)

61h C2h Security code area 64-bit unique device number

Table 32. CFI query identificat ion string(1)

1. Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.

Address Data Description Value

x16 x8

10h 20h 0051h ‘Q’

11h 22h 0052h Query unique ASCII string ‘QRY’ ‘R’

12h 24h 0059h ‘Y’

13h 26h 0002h Primary algorithm command set and control interface ID code

16-bit ID code defining a specific algorithm

AMD

compatible

14h 28h 0000h

15h 2Ah 0040h Address for primary algorithm extended query table (see

Table 35)P = 40h

16h 2Ch 0000h

17h 2Eh 0000h Alternate vendor command set and control interface ID code

second vendor - specified algorithm supported NA

18h 30h 0000h

19h 32h 0000h

Address for alternate algorithm extended query table NA

1Ah 34h 0000h

Common flash interfac e (CFI ) M29W6 40GH, M 29W64 0GL, M29W640GT, M 29W64 0GB

76/90

Table 33. CFI query system interface information

Address Data Description Value

x16 x8

1Bh 36h 0027h

VCC logic supply minimum program/erase voltage

bit 7 to 4BCD value in volts

bit 3 to 0BCD value in 100 mV

2.7 V

1Ch 38h 0036h

VCC logic supply maximum program/erase voltage

bit 7 to 4BCD value in volts

bit 3 to 0BCD value in 100 mV

3.6 V

1Dh 3Ah 00B5h

VPP [programming] supply minimum program/erase voltage

bit 7 to 4HEX value in volts

bit 3 to 0BCD value in 100 mV

11.5 V

1Eh 3Ch 00C5h

VPP [programming] supply maximum program/erase voltage

bit 7 to 4HEX value in volts

bit 3 to 0BCD value in 100 mV

12.5 V

1Fh 3Eh 0004h Typical timeout per single Byte/Word Program = 2n μs16μs

20h 40h 0004h Typical timeout for minimum size write buffer program = 2n μs16μs

21h 42h 000Ah Typical timeout per individual Block Erase = 2n ms 1 s

22h 44h 0000h Typical timeout for full Chip Erase = 2n ms NA

23h 46h 0004h Maximum timeout for Byte/Word Program = 2n times typical 256 μs

24h 48h 0004h Maximum timeout for Write Buffer Program = 2n times typical 200 μs

25h 4Ah 0003h Maximum timeout per individual Block Erase = 2n times typical 8 s

26h 4Ch 0000h Maximum timeout for Chip Erase = 2n times typical NA

M29 W640G H, M29W 640GL, M29 W640 GT , M29W 640GB Com m o n flash interface (CFI)

77/90

Table 34. D evice geomet ry de finiti on(1)

Address Data Description Value

x16 x8

27h 4Eh 0017h Device size = 2n in number of bytes 8 Mbytes

28h

29h

50h

52h

0002h

0000h Flash device interface code description x8, x16

async.

2Ah

2Bh

54h

56h

0005h

0000h

Maximum number of bytes in multi-byte program or page =

2n 32 bytes

2Ch 58h

M29W640GH,

M29W640GL 0001h Number of erase block regions. It specifies the number of

regions containing contiguous Erase blocks of the same

size.

M29W640GT,

M29W640GB 0002h 2

2Dh

2Eh

5Ah

5Ch M29W640GH,

M29W640GL

007Fh

0000h

Region 1 information

Number of erase blocks of identical size = 007Fh+1 128

2Fh

30h

5Eh

60h

0000h

0001h

Region 1 information

Block size in region 1 = 0100h * 256 byte 64 Kbytes

2Dh

2Eh

5Ah

5Ch M29W640GT,

M29W640GB

0007h

0000h

Region 1 information

Number of erase blocks of identical size = 0007h+1 8

2Fh

30h

5Eh

60h

0020h

0000h

Region 1 information

Block size in region 1 = 0020h * 256 byte 8Kbytes

31h

32h

62h

64h

M29W640GT,

M29W640GB

only

007Eh

0000h

Region 2 information

Number of erase blocks of identical size= 007Eh+1 127

33h

34h

66h

68h

0000h

0001h

Region 2 information

Block size in region 2 = 0100h * 256 byte 64 Kbytes

35h

36h

37h

38h

6Ah

6Ch

6Eh

70h

0000h

Region 3 information

Number of erase blocks of identical size=007Fh+1

Region 3 information

Block size in region 3 = 0000h * 256 byte

39h

3Ah

3Bh

3Ch

72h

74h

76h

78h

0000h

Region 4 information

Number of erase blocks of identical size=007Fh+1

Region 4 information

Block size in region 4 = 0000h * 256 byte

1. For bottom boot devices, erase block region 1 is located from address 000000h to 007FFFh and erase block region 2 from

address 008000h to 3FFFFFh.

For top boot devices, erase block region 1 is located from address 000000h to 3F7FFFh and erase block region 2 from

address 3F8000h to 3FFFFFh.

Common flash interfac e (CFI ) M29W6 40GH, M 29W64 0GL, M29W640GT, M 29W64 0GB

78/90

Table 35. P rim ary algorithm-spec ifi c extended query table

Address Data Description Value

x16 x8

40h 80h 0050h

Primary algorithm extended query table unique ASCII string ‘PRI’

‘P’

41h 82h 0052h ‘R’

42h 84h 0049h ‘I’

43h 86h 0031h Major version number, ASCII ‘1’

44h 88h 0033h Minor version number, ASCII ‘3’

45h 8Ah 0000h

Address sensitive unlock (bits 1 to 0)

00h = required, 01h = not required

Silicon revision number (bits 7 to 2)

Yes

46h 8Ch 0002h Erase Suspend

00h = not supported, 01h = Read only, 02 = Read and Write 2

47h 8Eh 0004h Block Protection

00h = not supported, x = number of blocks per protection group 4

48h 90h 0001h Temporary Block Unprotect

00h = not supported, 01h = supported Yes

49h 92h 0004h Block Protect /Unprotect 04

4Ah 94h 0000h Simultaneous operations, 00h = not supported No

4Bh 96h 0000h Burst mode: 00h = not supported, 01h = supported No

4Ch 98h 0001h Page mode: 00h = not supported, 01h = 4 page word, 02h = 8 page word Yes

4Dh 9Ah 00B5h

VPP supply minimum program/erase voltage

bit 7 to 4 HEX value in volts

bit 3 to 0 BCD value in 100 mV

11.5 V

4Eh 9Ch 00C5h

VPP supply maximum program/erase voltage

bit 7 to 4 HEX value in volts

bit 3 to 0 BCD value in 100 mV

12.5 V

4Fh 9Eh

0002h

0003h

0004h

0005h

M29W640GB

M29W640GT

M29W640GL

M29W640GH

Top/bottom boot block flag

02h = bottom boot device

03h = top boot device

04h = uniform blocks bottom VPP/WP protect

05h = uniform blocks top VPP/WP protect

–

50h A0h 0001h

Program Suspend

00h = not supported

01h = supported

Support

M29 W640G H, M29W 640GL, M29 W640 GT , M29W 640GB Com m o n flash interface (CFI)

79/90

Tabl e 36. Security code are a

Address Data Description

x16 x8

61h C3h, C2h XXXX

64 bit: unique device number

62h C5h, C4h XXXX

63h C7h, C6h XXXX

64h C9h, C8h XXXX

Exte n d ed m emor y blo ck M29 W640G H, M29 W640GL, M2 9W640 GT ,  M 29W64 0GB
80/90   
Appendix C  Extended memory block
The M29W640G has an extra block, the extended block, that can be accessed using a 
dedicated command.
This extended block is 128 words in x16 mode and 256 bytes in x8 mode. It is used as a 
security block to provide a permanent security identification number) or to store additional 
information. 
The extended block is either factory locked or customer lockable, its status is indicated by 
bit DQ7. This bit is permanently set to either ‘1’ or ‘0’ at the factory and cannot be changed. 
When set to ‘1’, it indicates that the device is factory locked and the extended block is 
protected. When set to ‘0’, it indicates that the device is customer lockable and the extended 
block is unprotected. Bit DQ7 being permanently locked to either ‘1’ or ‘0’ is another security 
feature which ensures that a customer lockable device cannot be used instead of a factory 
locked one.
Bit DQ7 is the most significant bit in the extended block verify code and a specific procedure 
must be followed to read it. See ‘extended memory block verify code’ in Table 7: Bus 
operatio ns, BYTE = VIL and Table 8: Bus operations, BYTE = VIH, for details of how to read 
bit DQ7.
The extended block can only be accessed when the device is in extended block mode. For 
details of how the extended block mode is entered and exited, refer to the Section 4.3.1: 
Enter Extended Block command and Sectio n 4.3.2: Exit Extended Block command, and to 
Table 10 and Table 11: Commands, 8-bit mode, BYTE = VIL.
C.1  Factory locked extended block
In devices where the extended block is factory locked, the security identification number is 
written to the extended block address space (see Table 37: Ext ende d bl ock addre ss  and 
data) in the factory. The DQ7 bit is set to ‘1’ and the extended block cannot be unprotected.
C.2  Customer lockable extended block
A device where the extended block is customer lockable is delivered with the DQ7 bit set to 
‘0’ and the extended block unprotected. It is up to the customer to program and protect the 
extended block but care must be taken because the protection of the extended block is not 
reversible.
There are two ways of protecting the extended block:
Issue the Enter Extended Block command to place the device in extended block mode, 
then use the In-system technique with RP either at VIH or at VID (refer to10 Section D.2: 
In-s ystem te chn iq ue  and to the corresponding flowcharts, Figure 28 and Figure 29, for 
a detailed explanation of the technique).
Issue the Enter Extended Block command to place the device in extended block mode, 
then use the programmer technique (refer to10, Section D.1: Programmer technique 
and to the corresponding flowcharts, Figure 26 and Figure 27, for a detailed 
explanation of the technique).
Once the extended block is programmed and protected, the Exit Extended Block command 
must be issued to exit the extended block mode and return the device to read mode.

M29 W640G H, M29W 640G L , M29W6 40GT, M 29W64 0GB E xtended m em o ry block

81/90

Table 37. Extended block address and data

Address Data

x8 x16 Factory locked Customer lockable

000000h-00007Fh 000000h-00003Fh Security identification number Determined by

customer

000080h-0000FFh 000040h-00007Fh Unavailable

Block prote ction M29 W640G H, M29 W640GL, M2 9W640 GT , M29W 640GB
82/90   
Appendix D  Block protection
Block protection can be used to prevent any operation from modifying the data stored in the 
memory. The blocks are protected in groups, refer to Ap pendix  A:  B lo ck addresses, 
Table 29 and Table 30 for details of the protection groups. Once protected, program and 
erase operations within the protected group fail to change the data.
There are three techniques that can be used to control block protection, these are the 
programmer technique, the in-system technique and temporary unprotection. Temporary 
unprotection is controlled by the Reset/Block Temporary Unprotection pin, RP; this is 
described in the Section 2: Signal descriptions.
D.1 Programmer technique
The programmer technique uses high (VID) voltage levels on some of the bus pins. These 
cannot be achieved using a standard microprocessor bus, therefore the technique is 
recommended only for use in programming equipment.
To protect a group of blocks follow the flowchart in Fi gur e 26 : Pr ogr amm er eq u ipme nt  grou p 
protect flowchart. To unprotect the whole chip it is necessary to protect all of the groups first, 
then all groups can be unprotected at the same time. To unprotect the chip follow Figure 27: 
Pr ogramm er eq ui pm ent chip unp rotect  fl owchart. Table 38: P rogra m m er techniqu e bus 
operati ons, B YTE = VIH or VIL, gives a summary of each operation.
The timing on these flowcharts is critical. Care should be taken to ensure that, where a 
pause is specified, it is followed as closely as possible. Do not abort the procedure before 
reaching the end. Chip unprotect can take several seconds and a user message should be 
provided to show that the operation is progressing.
D.2 In-system technique
The in-system technique requires a high voltage level on the Reset/Blocks Temporary 
Unprotect pin, RP(1). This can be achieved without violating the maximum ratings of the 
components on the microprocessor bus, therefore this technique is suitable for use after the 
memory has been fitted to the system.
To protect a group of blocks follow the flowchart in Fi gure 28:  In -syst em equi pment  group  
protect flowchart. To unprotect the whole chip it is necessary to protect all of the groups first, 
then all the groups can be unprotected at the same time. To unprotect the chip follow 
Figure 29: I n-syst em  equipmen t c hi p unpr otect fl owchart.
The timing on these flowcharts is critical. Care should be taken to ensure that, where a 
pause is specified, it is followed as closely as possible. Do not allow the microprocessor to 
service interrupts that will upset the timing and do not abort the procedure before reaching 
the end. Chip unprotect can take several seconds and a user message should be provided 
to show that the operation is progressing.
Note: RP can be ei t her at V IH or at VID when u sing the i n -system te chn i que to protect  the 
extended block.

M29 W640G H, M29W640GL, M29W6 40GT, M 29W64 0GB Block protec ti o n

83/90

Table 38. Programme r techni que bus operati ons, BYTE = VIH or VIL

Operation E G W Address Inputs

A0-A21

Data

Inputs/Outputs

DQ15A–1, DQ14-

DQ0

Block (Group)

Protect(1)

1. Block protection groups are shown in Appendix A, Tables 29 and 30.

VIL VID VIL Pulse A9 = VID, A12-A21 = Block Address

Others = X X

Chip Unprotect VID VID VIL Pulse A9 = VID, A12 = VIH, A15 = VIH

Others = X X

Block (Group)

Protection Verify VIL VIL VIH

A0, A2, A3 = VIL, A1 = VIH, A6 = VIL,

A9 = VID, A12-A21 = Block Address

Others = X

Pass = XX01h

Retry = XX00h

Block (Group)

Unprotection Verify VIL VIL VIH

A0, A2, A3 = VIL, A1 = VIH, A6 = VIH,

A9 = VID, A12-A21 = Block Address

Others = X

Retry = XX01h

Pass = XX00h

Block prote ction M29 W640G H, M29 W640GL, M2 9W640 GT , M29W 640GB

84/90

Figure 26. Programmer equipment group protect flowchart

1. Block protection groups are shown in Appendix A, Tables 29 and 30.

ADDRESS = GROUP ADDRESS

AI11555

G, A9 = VID,

E = VIL

n = 0

Wait 4µs

Wait 100µs

W = VIL

W = VIH

E, G = VIH,

A0, A2, A3 = VIL, A1 =VIH,

A6 =VIL, A9 = VID, Others = X

A9 = VIH

E, G = VIH

++n

= 25

START

FAIL

PASS

YES

DATA

01hYES

W = VIH

E = VIL

Wait 4µs

G = VIL

Wait 60ns

Read DATA

Verify Protect Set-upEnd

A9 = VIH

E, G = VIH

M29 W640G H, M29W640GL, M29W6 40GT, M 29W64 0GB Block protec ti o n

85/90

Figure 27. Programmer equipment chip unprotect flowchart

1. Block protection groups are shown in Appendix A, Tables 29 and 30.

PROTECT ALL GROUPS

AI11556b

A6, A12, A15 = VIH(1)

E, G, A9 = VID

DATA

W = VIH

E, G = VIH

ADDRESS = CURRENT GROUP ADDRESS

A0, A2, A3 = VIL, A1 =VIH,

A6 =VIH, A9 = VID, Others = X

Wait 10ms

00h

INCREMENT

CURRENT GROUP

n = 0

CURRENT GROUP = 0

Wait 4µs

W = VIL

++n

= 1000

START

YES

YESNO

NO LAST

GROUP

YES

E = VIL

Wait 4µs

G = VIL

Wait 60ns

Read DATA

FAIL PASS

Verify Unprotect Set-upEnd

A9 = VIH

E, G = VIH A9 = VIH

E, G = VIH

Block prote ction M29 W640G H, M29 W640GL, M2 9W640 GT , M29W 640GB

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Figure 28. In- sy st em equipm ent group protect flowchart

2. Block protection groups are shown in Appendix A, Tables 29 and 30.

3. RP can be either at VIH or at VID when using the In-system technique to protect the extended block.

AI11563

WRITE 60h

ADDRESS = GROUP ADDRESS

A0, A2, A3, A6 = VIL, A1 = VIH

n = 0

Wait 100µs

WRITE 40h

ADDRESS = GROUP ADDRESS

A0, A2, A3, A6 = VIL, A1 = VIH

RP = VIH ++n

= 25

START

FAIL

PASS

YES

DATA

01hYES

RP = VIH

Wait 4µs

Verify Protect Set-upEnd

READ DATA

ADDRESS = GROUP ADDRESS

A0, A2, A3, A6 = VIL, A1 = VIH

RP = VID

ISSUE READ/RESET

COMMAND

ISSUE READ/RESET

COMMAND

WRITE 60h

ADDRESS = GROUP ADDRESS

A0, A2, A3, A6 = VIL, A1 = VIH

M29 W640G H, M29W640GL, M29W6 40GT, M 29W64 0GB Block protec ti o n

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Figure 29. In-system equipment chip unprotect flowchart

1. Block protection groups are shown in Appendix A, Tables 29 and 30.

AI11564

WRITE 60h

ANY ADDRESS WITH

A0, A2, A3 = VIL, A1, A6 = VIH

n = 0

CURRENT GROUP = 0

Wait 10ms

WRITE 40h

ADDRESS = CURRENT GROUP ADDRESS

A0, A2, A3 = VIL, A1, A6 = VIH

RP = VIH

++n

= 1000

START

FAIL PASS

YES

DATA

00h

YESNO

RP = VIH

Wait 4µs

READ DATA

ADDRESS = CURRENT GROUP ADDRESS

A0, A2, A3 = VIL, A1, A6 = VIH

RP = VID

ISSUE READ/RESET

COMMAND

ISSUE READ/RESET

COMMAND

PROTECT ALL GROUPS

INCREMENT

CURRENT GROUP

LAST

GROUP

YES

WRITE 60h

ANY ADDRESS WITH

A0, A2, A3, A6 = VIL, A1 = VIH

Verify Unprotect Set-upEnd

Flo wch art M29 W640G H, M29 W640G L , M29W6 40GT, M 29W64 0GB

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Appendix E Flowchart

Figure 30. Write to Buffer and Program flow char t and pseudocode

1. n+1 is the number of addresses to be programmed.

2. A Write to Buffer and Program Abort and Reset must be issued to return the device in read mode.

3. When the block address is specified, any address in the selected block address space is acceptable. However when

loading write buffer address with data, all addresses must fall within the selected write buffer page.

4. DQ7 must be checked since DQ5 and DQ7 may change simultaneously.

5. If this flowchart location is reached because DQ5=’1’, then the Write to Buffer and Program command failed. If this

flowchart location is reached because DQ1=’1’, then the Write to Buffer and Program command aborted. In both cases, the

appropriate reset command must be issued to return the device in read mode: a Reset command if the operation failed, a

Write to Buffer and Program Abort and Reset command if the operation aborted.

6. See Table 10 and Table 11, for details on Write to Buffer and Program command sequence.

Write to Buffer F0h

Command,

Block Address

AI12777

Start

Write Buffer Data,

Start Address

YES

Abort Write

to Buffer

FAIL OR ABORT(5)

Write n(1),

Block Address

X = 0

Write Next Data,

Program Address Pair

X = X-1

Program Buffer

to Flash Block Address

Read Status Register

(DQ1, DQ5, DQ7) at

Last Loaded Address

YES

DQ7 = Data

Check Status Register

(DQ5, DQ7) at

Last Loaded Address

(3)

YES

Write to a Different

Block Address

Write to Buffer and

Program Aborted(2)

NO DQ5 = 1

YES

DQ1 = 1

YES

DQ7 = Data

(4)

END

First Part of the

Write to Buffer and Program Command

X=n

M29 W640G H, M29W640GL, M29W6 40GT, M 29W64 0GB Revi sion history

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10 Revision history

Table 39. D ocument revision history

Date Version Changes

20-Jul-2006 1 Initial release.

21-Aug-2006 2

Datasheet status updated to full datasheet; added an explanation of how to abort the

Write Buffer Programming Sequence in Section 4.2.9 : Write to Buffer and P r ogram

command; amended text of 4.2.11: Write to Buffer and Prog ram Abort and Res et

command.

25-Oct-2006 3 Table 13: Status Register bits updated.

22-Feb-2007 4 90 ns access time added.

27-Mar-2008 5 Applied Numonyx branding.

09-Jun-2008 6

Updated: Section 1 : Description, Section 2.8: VPP/Wri te Prot ect ( VPP/WP),

Sec t ion 2 .9 : R ese t/ Bl o ck Tempo r ary Unp r ot ec t (R P), and Tab le 6: Hardware

protection.

Minor text changes.

16-Dec-2008 7

Added the following:

– To cover page, bullet stating: Automotive Certified Parts Available for Version

M29W640GT/M29W640GB.

–To Table 27. : Or dering information scheme, under “Speed”: 7A = 70 ns Automotive -

40C to 85C Certified Part.

11-March-2009 8 Added FBGA (ZS) package information.

26-March-2009 9

Updated CFI addresses 20h and 24h with the correct timeout value for write buffer

program. Devices with date code 913 (ww13-2009) or later include this CFI

correction.

20-July-2009 10 Corrected tPHWL from 200 to 50 in Table 20.: Reset/Block Temporary Unprotect AC

characteristics.

8-October-

2009 11

Made the following revision to cover page:

– Removed specific part numbers from the bullet, Automotive Certified Parts

Available.

Made the following revision to Order Information:

– Add temperature range, option: 3 = -40 °C to 125 °C

– Added to speed: 7A = 70 ns Automotive -40 °C to 85 °C Certified Part, used in

conjiuction with temperature range option 6 to distinguish the Automotive Part"

M29 W640G H, M29 W640G L , M29W6 40GT, M 29W64 0GB

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