APTML1002U60R020T3AG
APTML1002U60R020T3AG – Rev 1 March, 2010
www.microsemi.com 1
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16
15
182023 22
13
11 12
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87
29
30
28 27 26
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32
31
10
19
2
25
4
Pins 13/14 ; 29/30 ; 31/32 must be shorted together
Absolute maximum ratings (per leg)
n In saturation mode
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 1000 V
Tc = 25°C 20
ID Continuous Drain Current Tc = 80°C 14
IDM Pulsed Drain current 74 A
VGS Gate - Source Voltage ±30 V
RDSon Drain - Source ON Resistance 720 mΩ
PD Maximum Power Di ssi pation n T
c = 25°C 520 W
Application
• Electronic load dedicated to power supplies and
battery discharge testing
Features
• Linear MOSFET
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration
• AlN substrate for improved thermal performance
Benefits
• Direct mounting to heatsink (isolated package)
• easy series and parallels combinations for power and
voltage improvements
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Linear MOSFET
Power Module
VDSS = 1000V
RDSon = 600mΩ typ @ Tj = 25°C
ID = 20A @ Tc = 25°C
APTML1002U60R020T3AG
APTML1002U60R020T3AG – Rev 1 March, 2010
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics (per leg)
Symbol Characteristic Test Conditions Min Typ Max Unit
VDS = 1000V ; VGS = 0V Tj = 25°C 250
IDSS Zero Gate Voltage Drain Current VDS = 800V ; VGS = 0V Tj = 125°C 1000
µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 10A 600 720
mΩ
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2.5mA 2 4 V
IGSS Gate – Source Leakage Current VGS = ±30 V ±100 nA
Dynamic Characteristics (per leg)
Symbol Characteristic Test Conditions Min Typ Max Unit
Ciss Input Capacitance 6000
Coss Output Capacitance 775
Crss Reverse Transfer Capacitan ce
VGS = 0V
VDS = 25V
f = 1MHz 285 pF
Shunt Electrical Characteristics (per leg)
Symbol Characteristic Min Typ Max Unit
Rsh Resistance value 20 mΩ
Tsh Tolerance 2 %
TC=25°C 20
Psh Load capacity TC=80°C 10
W
TC=25°C 31
Ish Current capacity TC=80°C 22 A
Temperature sensor PTC
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 1980 2020 Ω
R100/R25 Resistance ratio Tamb=100°C & 25°C 1.676 1.696 1.716
R-55/R25 Resistance ratio Tamb=-55°C & 25°C 0.48 0.49 0.50
B Temperature coefficient 7900 ppm/K
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
RthJC Junction to Case Thermal Resistance MOSFET (per leg) 0.24 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 4000 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100 °C
Torque Mounting torque To heatsink M4 2.5 4.7 N.m
Wt Package Weight 110 g
APTML1002U60R020T3AG
APTML1002U60R020T3AG – Rev 1 March, 2010
www.microsemi.com 3
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SP3 Package outline (dimensions in mm)
17
12
28
1
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsem i's products are covered by one o r more of U.S patents 4,8 95,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,7 86 5,256,583 4,748,103
5,283,202 5,231,474 5,4 34,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,2 83 7,196, 634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.