MMSD914T1 Preferred Device Switching Diode The switching diode has the following features: * SOD-123 Surface Mount Package * High Breakdown Voltage * Fast Speed Switching Time http://onsemi.com 1 CATHODE 2 ANODE MAXIMUM RATINGS 2 Rating Symbol Value Unit Continuous Reverse Voltage VR 100 Vdc Peak Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit Total Device Dissipation FR-5 Board (1) TA = 25C Derate above 25C PD 225 mW 1.8 mW/C Thermal Resistance Junction to Ambient RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Peak Forward Surge Current 1 PLASTIC SOD-123 CASE 425 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Alumina Substrate (2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range DEVICE MARKING 5D ORDERING INFORMATION Device MMSD914T1 Package Shipping SOD-123 3000 / Tape & Reel Max Unit ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min V(BR) 100 -- Vdc IR -- -- 25 5.0 nAdc Adc Forward Voltage (IF = 10 mAdc) VF -- 1000 mVdc Diode Capacitance (VR = 0 Vdc, f = 1.0 MHz) CD -- 4.0 pF Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr -- 4.0 ns OFF CHARACTERISTICS Reverse Breakdown Voltage (IBR = 100 Adc) Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 March, 2000 - Rev. 3 1 Publication Order Number: MMSD914T1/D MMSD914T1 820 +10 V 2k 100 H 0.1 F IF tr tp IF t trr 10% 0.1 F DUT 50 OUTPUT PULSE GENERATOR 90% 50 INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL t iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 100 10 I R, REVERSE CURRENT (A) 10 TA = 85C TA = -40C 1.0 0.1 0.2 0.4 0.6 0.8 TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 TA = 25C 1.0 0.001 1.2 TA = 25C 0 10 20 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 CD , DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150C 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 2 8 40 50 MMSD914T1 INFORMATION FOR USING THE SOD-123 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.91 0.036 EEE EEE EEE EEE EEE EEE EEE EEE 2.36 0.093 4.19 0.165 1.22 0.048 mm inches SOD-123 SOD-123 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOD-123 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOD-123 package, PD can be calculated as follows: PD = The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excesi h l h k d hi h l i d TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 milliwatts The 556C/W for the SOD-123 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOD-123 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. http://onsemi.com 3 MMSD914T1 PACKAGE DIMENSIONS SOD-123 PLASTIC PACKAGE CASE 425-04 ISSUE C A AAA AAA C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. H 1 K DIM A B C D E H J K B E 2 D INCHES MIN MAX 0.055 0.071 0.100 0.112 0.037 0.053 0.020 0.028 0.004 --0.000 0.004 --0.006 0.140 0.152 MILLIMETERS MIN MAX 1.40 1.80 2.55 2.85 0.95 1.35 0.50 0.70 0.25 --0.00 0.10 --0.15 3.55 3.85 STYLE 1: PIN 1. CATHODE 2. ANODE J Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800-282-9855 Toll Free USA/Canada http://onsemi.com 4 MMSD914T1/D