NTR4501N, NSTR4501N Power MOSFET 20 V, 3.2 A, Single N-Channel, SOT-23 Features * * * * * Leading Planar Technology for Low Gate Charge / Fast Switching 2.5 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint NSTR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant http://onsemi.com V(BR)DSS 20 V RDS(on) Typ ID Max (Note 1) 70 mW @ 4.5 V 3.6 A 88 mW @ 2.5 V 3.1 A N-Channel Applications * Load/Power Switch for Portables * Load/Power Switch for Computing * DC-DC Conversion D G MAXIMUM RATINGS (TJ= 25C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGS 12 V ID 3.2 A 2.4 A 1.25 W Continuous Drain Current (Note 1) Steady State Steady State Power Dissipation (Note 1) Pulsed Drain Current TA = 25C TA = 85C Steady State PD IDM 10.0 A TJ, Tstg -55 to 150 C Continuous Source Current (Body Diode) IS 1.6 A Lead Temperature for Soldering Purposes (1/8" from case for 10 s) TL 260 C tp = 10 ms Operating Junction and Storage Temperature 3 MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 1 TR1 M G G 2 SOT-23 CASE 318 STYLE 21 TR1 M G 2 Source 1 Gate = Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. THERMAL RESISTANCE RATINGS Parameter S Symbol Max Unit Junction-to-Ambient (Note 1) RqJA 100 C/W Junction-to-Ambient (Note 2) RqJA 300 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size. ORDERING INFORMATION Device Package Shipping NTR4501NT1G SOT-23 (Pb-Free) 3000 / Tape & Reel NSTR4501NT1G SOT-23 (Pb-Free) 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2012 August, 2012 - Rev. 12 1 Publication Order Number: NTR4501N/D NTR4501N, NSTR4501N Electrical Characteristics (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units V(BR)DSS VGS = 0 V, ID = 250 mA 20 24.5 V 22 mV/C OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current V(BR)DSS/TJ IDSS VGS = 0 V TJ = 25C 1.5 mA VDS = 16 V TJ = 85C 10 mA 100 nA IGSS VDS = 0 V, VGS = 12 V VGS(TH) VGS = VDS, ID = 250 mA ON CHARACTERISTICS Gate Threshold Voltage (Note 3) Negative Threshold Temperature Coefficient Drain-to-Source On Resistance Forward Transconductance VGS(TH)/TJ RDS(on) gFS 0.65 1.2 -2.3 V mV/C VGS = 4.5 V, ID = 3.6 A 70 80 VGS = 2.5 V, ID = 3.1 A 88 105 VDS = 5.0 V, ID = 3.6 A 9 mW S CHARGES AND CAPACITANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge 200 VGS = 0 V, f = 1.0 MHz, VDS = 10 V QG(TOT) Gate-to-Source Gate Charge QGS Gate-to-Drain Charge QGD 80 50 2.4 VGS = 4.5 V, VDS = 10 V, ID = 3.6 A pF 6.0 0.5 nC 0.6 SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) VGS = 4.5 V, VDS = 10 V, ID = 3.6 A, RG = 6.0 W tf 6.5 13 12 24 12 24 3 6 0.8 1.2 ns SOURCE-DRAIN DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, ISD = 1.6 A V 7.1 VGS = 0 V, dIS/dt = 100 A/ms, IS = 1.6 A QRR 5 1.9 3.0 3. Pulse Test: Pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns nC NTR4501N, NSTR4501N 8 VGS = 2.0 V T = 25C J VGS = 10 V VGS = 2.2 V 6.0 5.0 VGS = 3.0 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 7.0 VGS = 1.8 V 4.0 3.0 VGS = 1.6 V 2.0 VGS = 1.4 V 1.0 0 VGS = 1.2 V 0 1 2 3 4 5 6 7 8 9 6 5 4 3 2 TJ = -55C 0.5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1.0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID = 3.2 A TJ = 25C 0.20 0.15 0.10 2 4 3 5 6 0.10 TJ = 25C VGS = 2.5 V 0.09 0.08 VGS = 4.5 V 0.07 0.06 0.05 2 3 4 5 6 ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Gate-to-Source Voltage Figure 4. On-Resistance versus Drain Current and Gate Voltage 1000 VGS = 0 V ID = 3.2 A VGS = 4.5 V 1.2 IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1.4 1.0 0.8 0.6 -50 2.0 Figure 2. Transfer Characteristics 0.25 1 1.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics 0.05 TJ = 25C TJ = 125C 1 0 10 VDS 10 V 7 -25 0 25 50 75 100 125 TJ = 150C 100 10 TJ = 100C 1.0 150 2 TJ, JUNCTION TEMPERATURE (C) 4 6 8 10 12 14 16 18 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 20 VGS = 0 V TJ = 25C C, CAPACITANCE (pF) 300 250 Ciss 200 150 100 Coss 50 Crss 0 0 2.5 5 7.5 10 12.5 15 20 17.5 5.0 15 QT 4.0 12 VDS VGS 9 3.0 QGD QGS 2.0 TJ = 25C ID = 3.2 A 0 0.5 Figure 7. Capacitance Variation 1.5 2.0 2.5 0 3.0 Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 100 td(off) IS, SOURCE CURRENT (AMPS) 4 VDS = 10 V ID = 3.2 A VGS = 4.5 V tr 10 t, TIME (ns) 1.0 3 QG, TOTAL GATE CHARGE (nC) DRAIN-TO-SOURCE VOLTAGE (VOLTS) td(on) tf 1 0.1 6 1.0 0 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 350 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) NTR4501N, NSTR4501N 1 10 VGS = 0 V TJ = 25C 3 2 1 0 0.3 100 0.6 1.2 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) RG, GATE RESISTANCE (W) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current TRANSIENT THERMAL RESISTANCE, RqJA (C/W) 1000 D = 0.5 100 10 1 0.2 0.1 0.05 0.02 0.01 0.1 0.000001 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME, tp (s) Figure 11. Thermal Response http://onsemi.com 4 1 10 100 1000 NTR4501N, NSTR4501N PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN L1 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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