© Semiconductor Components Industries, LLC, 2012
August, 2012 − Rev. 12
1Publication Order Number:
NTR4501N/D
NTR4501N, NSTR4501N
Power MOSFET
20 V, 3.2 A, Single N−Channel, SOT−23
Features
•Leading Planar Technology for Low Gate Charge / Fast Switching
•2.5 V Rated for Low Voltage Gate Drive
•SOT−23 Surface Mount for Small Footprint
•NSTR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free and are RoHS Compliant
Applications
•Load/Power Switch for Portables
•Load/Power Switch for Computing
•DC−DC Conversion
MAXIMUM RATINGS (TJ= 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 20 V
Gate−to−Source Voltage VGS ±12 V
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°CID3.2 A
TA = 85°C 2.4 A
Steady State Power
Dissipation (Note 1)
Steady State PD1.25 W
Pulsed Drain Current tp = 10 msIDM 10.0 A
Operating Junction and Storage Temperature TJ,
Tstg
−55 to
150
°C
Continuous Source Current (Body Diode) IS1.6 A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL260 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient (Note 1) RqJA 100 °C/W
Junction−to−Ambient (Note 2) RqJA 300
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
G
D
S
Device Package Shipping†
ORDERING INFORMATION
20 V
88 mW @ 2.5 V
70 mW @ 4.5 V
RDS(on) Typ
3.6 A
ID Max
(Note 1)
V(BR)DSS
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM &
PIN ASSIGNMENT
2
1
3
N−Channel
3.1 A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NTR4501NT1G SOT−23
(Pb−Free)
3000 / Tape & Reel
TR1 = Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
3
Drain
1
Gate
2
Source
TR1 M G
G
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NSTR4501NT1G 3000 / Tape & ReelSOT−23
(Pb−Free)
NTR4501N, NSTR4501N
http://onsemi.com
2
Electrical Characteristics (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3) V(BR)DSS VGS = 0 V, ID = 250 mA20 24.5 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ22 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V TJ = 25°C 1.5 mA
VDS = 16 V TJ = 85°C 10 mA
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±12 V ±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage (Note 3) VGS(TH) VGS = VDS, ID = 250 mA0.65 1.2 V
Negative Threshold
Temperature Coefficient
VGS(TH)/TJ−2.3 mV/°C
Drain−to−Source On Resistance
RDS(on)
VGS = 4.5 V, ID = 3.6 A 70 80
mW
VGS = 2.5 V, ID = 3.1 A 88 105
Forward Transconductance gFS VDS = 5.0 V, ID = 3.6 A 9 S
CHARGES AND CAPACITANCES
Input Capacitance Ciss
VGS = 0 V, f = 1.0 MHz,
VDS = 10 V
200
pF
Output Capacitance Coss 80
Reverse Transfer Capacitance Crss 50
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 10 V,
ID = 3.6 A
2.4 6.0
nC
Gate−to−Source Gate Charge QGS 0.5
Gate−to−Drain Charge QGD 0.6
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time td(on)
VGS = 4.5 V, VDS = 10 V,
ID = 3.6 A, RG = 6.0 W
6.5 13
ns
Rise Time tr12 24
Turn−Off Delay Time td(off) 12 24
Fall Time tf3 6
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V, ISD = 1.6 A 0.8 1.2 V
Reverse Recovery Time tRR
VGS = 0 V,
dIS/dt = 100 A/ms,
IS = 1.6 A
7.1
ns
Charge Time ta5
Discharge Time tb1.9
Reverse Recovery Charge QRR 3.0 nC
3. Pulse Test: Pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTR4501N, NSTR4501N
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3
VDS ≥ 10 V
VGS = 1.8 V
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
012345678910
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 1. On−Region Characteristics
VGS = 10 V
VGS = 1.6 V
VGS = 1.4 V
VGS = 3.0 V
VGS = 2.0 V TJ = 25°C
8
0.5 1.0 1.5 2.0 2.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 2. Transfer Characteristics
TJ = 25°C
TJ = −55°C
TJ = 125°C
0.25
123 6
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
ID = 3.2 A
TJ = 25°C
0.05
0.06
0.07
0.08
0.09
23 456
ID, DRAIN CURRENT (AMPS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
1.4
−50 −25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
Figure 5. On−Resistance Variation with
Temperature
ID = 3.2 A
VGS = 4.5 V
1.0
10
1000
2 6 10 14 18
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage
Current versus Voltage
VGS = 0 V
TJ = 150°C
TJ = 100°C
IDSS, LEAKAGE (nA)
VGS = 2.5 V
VGS = 4.5 V
150
VGS = 2.2 V
VGS = 1.2 V
6
5
4
3
2
1
0
0.20
0.15
0.10
0.05 45
0.10
TJ = 25°C
1.2
1.0
0.8
0.6
2012 1648
7
NTR4501N, NSTR4501N
http://onsemi.com
4
td(on)
0
350
0 2.5 5 7.5 10 15 20
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Crss
Coss
Ciss
VGS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
0
1.0
2.0
4.0
5.0
0 0.5 1.0 1.5 2.0
QG, TOTAL GATE CHARGE (nC)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. Gate−to−Source and Drain−to−Source
Voltage versus Total Charge
TJ = 25°C
ID = 3.2 A
QT
QGD
QGS
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
100
1 10 100
10
t, TIME (ns)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
VDS = 10 V
ID = 3.2 A
VGS = 4.5 V
tr
td(off)
tf
RG, GATE RESISTANCE (W)
0
1
2
3
4
0.3 0.6 0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
IS, SOURCE CURRENT (AMPS)
Figure 10. Diode Forward Voltage versus
Current
VGS = 0 V
TJ = 25°C
12.5 17.5
300
250
200
150
100
50
3.0
2.5 3.0
15
12
9
6
3
0
VGS
VDS
0.1
1.2
0.1
1
10
100
1000
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
0.1
0.2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
PULSE TIME, tp (s)
Figure 11. Thermal Response
TRANSIENT THERMAL RESISTANCE,
RqJA (°C/W)
NTR4501N, NSTR4501N
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5
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q°°°°
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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Phone: 81−3−5817−1050
NTR4501N/D
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