BSS84W
Document number: DS30205 Rev. 17 – 2
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© Diodes Incorporated
BSS84W
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
BVDSS
RDS(ON)
ID
TA = +25°C
-50V
10Ω @ VGS = -5V
-130mA
Description
This MOSFET has been designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
Ordering Information (Notes 4 & 5)
Part Number
Compliance
Case
Packaging
BSS84W-7-F
Standard
SOT323
3000 / Tape & Reel
BSS84WQ-7-F
Automotive
SOT323
3000 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Date Code Key
Year
2012
~
2019
2020
2021
2022
2023
2024
2025
2026
2027
Code
Z
~
G
H
I
J
K
L
M
N
O
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
SOT323
Top View
Equivalent Circuit
Top View
G S
D
e3
Shanghai A/T Site
K84 = Product Type Marking Code
YM or YM = Date Code Marking
Y or Y = Year (ex: G = 2019)
M = Month (ex: 9 = September)
D
S
G
BSS84W
Document number: DS30205 Rev. 17 – 2
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BSS84W
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-50
V
Drain-Gate Voltage (Note 6)
VDGR
-50
V
Gate-Source Voltage Continuous
VGSS
20
V
Drain Current (Note 6) Continuous
ID
-130
mA
Pulsed Drain Current (Note 6)
IDM
-1
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 6)
PD
200
mW
Thermal Resistance, Junction to Ambient
RθJA
625
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
-50
-75
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
-1
-2
-100
µA
µA
nA
VDS = -50V, VGS = 0V, TJ = +25°C
VDS = -50V, VGS = 0V, TJ = +125°C
VDS = -25V, VGS = 0V, TJ = +25°C
Gate-Body Leakage
IGSS
10
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
-0.8
-1.6
-2.0
V
VDS = VGS, ID = -1mA
Static Drain-Source On-Resistance
RDS(ON)
6
10
Ω
VGS = -5V, ID = -0.1A
Forward Transconductance
gFS
0.05
S
VDS = -25V, ID = -0.1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
45
pF
VDS = -25V, VGS = 0V, f = 1.0MHz
Output Capacitance
Coss
25
pF
Reverse Transfer Capacitance
Crss
12
pF
SWITCHING CHARACTERISTICS (Note 8)
Turn-On Delay Time
tD(ON)
10
ns
VDD = -30V, ID = -0.27A,
RGEN = 50Ω, VGS = -10V
Turn-Off Delay Time
tD(OFF)
18
ns
Notes: 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Incorporated’s suggested pad layout document, which
can be found on our website at http://www.diodes.com/package-outlines.html.
7. Short duration pulse test used to minimize self-heating effect.
8. Guarantee by design. Not subject to production testing.
BSS84W
Document number: DS30205 Rev. 17 – 2
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BSS84W
0
50
100
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (
癈
)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
A
150
200
250
0
0
-600
-500
-400
-300
-200
-100
0-2-1 -5
-4
-3
I , DRAIN-SOURCE CURRENT (mA)
D
V , DRAIN SOURCE (V)
DS
Fig. 2 Drain Source Current vs.Drain Source Voltage
T = 25 C
A°
V = -5V
GS
-4.5V
-3.5V
-3.0V
-2.5V
-0.0
-1.0
-0.8
-0.6
-0.4
-0.2
0-2 -3 -4
-1 -8-7-6
-5
I , DRAIN CURRENT (A)
D
V , GATE-TO-SOURCE VOLTAGE (V)
GS
Fig. 3 Drain Current vs. Gate Source Voltage
T = -55 C
A °
T = 25 C
A °
T = 125 C
A °
0
3
6
9
12
15
-50 -25 025 50 125
100
75 150
T , JUNCTION TEMPERATURE (
癈
)
Fig. 5 On-Resistance vs. Junction Temperature
J
V = -10V
I = -0.13A
GS
D
R , ON-RESISTANCE ( )
DS(ON)
0.0
5.0
10.0
-0.0 -0.2 -0.4 -0.6 -0.8 1.0
I , DRAIN-CURRENT (A)
Fig. 6 On-Resistance vs. Drain-Current
D
15.0
20.0
25.0
V = -8V
GS
V = -10V
GS
V = -3V
GS
V = -3.5V
GS
V = -4V
GS
V = -4.5V
GS
V = -6V
GS
V = -5V
GS
R , ON-RESISTANCE ( )
DS(ON)
(°C)
(°C)
VDS, DRAIN SOURCE VOLTAGE (V)
0
2
4
6
8
10
12
14
16
18
20
0 4 8 12 16 20
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Ω)
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 4 Typical Transfer Characteristic
ID = -100mA
BSS84W
Document number: DS30205 Rev. 17 – 2
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June 2019
© Diodes Incorporated
BSS84W
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT323
SOT323
Dim
Min
Max
Typ
A1
0.00
0.10
0.05
A2
0.90
1.00
0.95
b
0.25
0.40
0.30
c
0.10
0.18
0.11
D
1.80
2.20
2.15
E
2.00
2.20
2.10
E1
1.15
1.35
1.30
e
0.650 BSC
e1
1.20
1.40
1.30
F
0.375
0.475
0.425
L
0.25
0.40
0.30
a
0°
8°
--
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT323
Dimensions
Value
(in mm)
C
0.650
G
1.300
X
0.470
Y
0.600
Y1
2.500
a
E1E
Fe1
b
L
c
e
A2
A1
D
Y1 G
Y
X
C
BSS84W
Document number: DS30205 Rev. 17 – 2
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June 2019
© Diodes Incorporated
BSS84W
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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