VBP104S, VBP104SR
www.vishay.com Vishay Semiconductors
Rev. 1.4, 24-Aug-11 1Document Number: 81170
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
VBP104S and VBP104SR are high speed and high sensitive
PIN photodiodes. It is a surface mount device (SMD)
including the chip with a 4.4 mm2 sensitive area detecting
visible and near infrared radiation.
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2
• Radiant sensitive area (in mm2): 4.4
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 65°
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• High speed photo detector
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
VBP104S
VBP104SR
PRODUCT SUMMARY
COMPONENT Ira (μA) ϕ (deg) λ0.1 (nm)
VBP104S 35 ± 65 430 to 1100
VBP104SR 35 ± 65 430 to 1100
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VBP104S Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Gullwing
VBP104SR Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Reverse gullwing
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR60 V
Power dissipation Tamb ≤ 25 °C PV215 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature Acc. reflow solder profile fig. 8 Tsd 260 °C
Thermal resistance junction/ambient RthJA 350 K/W
VBP104S, VBP104SR
www.vishay.com Vishay Semiconductors
Rev. 1.4, 24-Aug-11 2Document Number: 81170
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 50 mA VF11.3V
Breakdown voltage IR = 100 μA, E = 0 V(BR) 60 V
Reverse dark current VR = 10 V, E = 0 Iro 230nA
Diode capacitance VR = 0 V, f = 1 MHz, E = 0 CD48 pF
VR = 3 V, f = 1 MHz, E = 0 CD17 40 pF
Open circuit voltage Ee = 1 mW/cm2, λ = 950 nm Vo350 mV
Temperature coefficient of VoEe = 1 mW/cm2, λ = 950 nm TKVo - 2.6 mV/K
Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik32 μA
Temperature coefficient of IkEe = 1 mW/cm2, λ = 950 nm TKIk 0.1 %/K
Reverse light current Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V Ira 25 35 μA
Angle of half sensitivity ϕ± 65 deg
Wavelength of peak sensitivity λp940 nm
Range of spectral bandwidth λ0.1 430 to 1100 nm
Noise equivalent power VR = 10 V, λ = 950 nm NEP 4 x 10-14 W/√Hz
Rise time VR = 10 V, RL = 1 kΩ,
λ = 820 nm tr100 ns
Fall time VR = 10 V, RL = 1 kΩ,
λ = 820 nm tf100 ns
20 40 60 80
1
10
100
1000
100
94 8403
VR = 10 V
Tamb - Ambient Temperature (°C)
I
ro
- Reverse Dark Current (nA)
0.6
0.8
1.0
1.2
1.4
94 8409
V
R
=5V
λ = 950 nm
100806040200
I - Relative Reverse Light Current
T - Ambient Temperature (°C)
amb
ra rel
VBP104S, VBP104SR
www.vishay.com Vishay Semiconductors
Rev. 1.4, 24-Aug-11 3Document Number: 81170
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
0.01 0.1 1
0.1
1
10
100
1000
10
94 8421
VR = 5 V
λ = 950 nm
Ee - Irradiance (mW/cm2)
I
ra
- Reverse Light Current (µA)
0.1 1 10
1
10
100
VR - Reverse Voltage (V)
100
94 8422
Ira - Reverse Light Current (µA)
1 mW/cm2
0.5 mW/cm2
0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
λ = 950 nm
0.1 1 10
0
20
40
60
80
CD - Diode Capacitance (pF)
VR - Reverse Voltage (V)
100
94 8423
E = 0
f = 1 MHz
350 550 750 950
0
0.2
0.4
0.6
0.8
1.0
1150
94 8420
λ - Wavelength (nm)
S(λ)
rel
- Relative Spectral Sensitivity
0.4 0.2 0
S
rel
- Relative Radiant Sensitivity
94 8406
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
VBP104S, VBP104SR
www.vishay.com Vishay Semiconductors
Rev. 1.4, 24-Aug-11 4Document Number: 81170
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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PACKAGE DIMENSIONS FOR VBP104S in millimeters
Drawing-No.: 6.541-5088.01-4
Issue: 1; 15.04.10
22107
8.9
5.4
1.8
Recommended solder pad
specications
according to DIN
technical drawings
Anode Cathode
2.2 0.18 ± 0.2
4.4 ± 0.1
1.95
3.9 ± 0.1
1 ± 0.15
6.4 ± 0.3
0.8 ± 0.1
1.6 ± 0.1
1.2 ± 0.1
Chip Size
2.4 x 2.4
0.1 - 0.1
(0.47 ref.)
Flat area 0.3 min.
0.75 ± 0.050.15 ± 0.02
VBP104S, VBP104SR
www.vishay.com Vishay Semiconductors
Rev. 1.4, 24-Aug-11 5Document Number: 81170
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS FOR VBP104SR in millimeters
Drawing-No.: 6.541-5087.01-4
Issue: 1; 15.04.10
22106
8.9
5.4
1.8
Recommended solder pad
specications
according to DIN
technical drawings
A
node Cathode
2.2 0.18 ± 0.2
4.4 ± 0.1
1.95
3.9 ± 0.1
1 ± 0.15
6.4 ± 0.3
0.8 ± 0.1
1.6 ± 0.1
Chip Size
2.4 x 2.4
1.2 ± 0.1
0.1 min.
(0.47 ref.)
Flat area 0.3 min.
0.75 ± 0.050.15 ± 0.02
VBP104S, VBP104SR
www.vishay.com Vishay Semiconductors
Rev. 1.4, 24-Aug-11 6Document Number: 81170
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TAPING DIMENSIONS FOR VBP104S in millimeters
TAPING DIMENSIONS FOR VBP104SR in millimeters
21730
VBP104S, VBP104SR
www.vishay.com Vishay Semiconductors
Rev. 1.4, 24-Aug-11 7Document Number: 81170
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
REEL DIMENSIONS FOR VBP104S AND VBP104SR in millimeters
SOLDER PROFILE
Fig. 8 - Lead (Pb)-free Reflow Solder Profile
acc. J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Time between soldering and removing from MBB must not
exceed the time indicated in J-STD-020:
Moisture sensitivity: level 3
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or
recommended conditions:
192 h at 40 °C (+ 5 °C), RH < 5 %
or
96 h at 60 °C (+ 5 °C), RH < 5 %.
21732
0
50
100
150
200
250
300
0 50 100 150 200 250 300
Time (s)
Temperature (°C)
240 °C 245 °C
max. 260 °C
max. 120 s max. 100 s
217 °C
max. 30 s
max. ramp up 3 °C/s max. ramp down 6 °C/s
19841
255 °C
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Revision: 12-Mar-12 1Document Number: 91000
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