(R) SEMICONDUCTOR 500 mW DO-34 Hermetically Sealed Glass Zener Voltage Regulators AXIAL LEAD DO34 TA = 25C unless otherwise noted Parameter Power Dissipation Storage Temperature Range DEVICE MARKING DIAGRAM Value Units 500 mW -65 to +175 C Operating Junction Temperature +175 C Lead Temperature (1/16" from case for 10 seconds) 230 C L xxx T Absolute Maximum Ratings L xxx T (tolerance) Band color These ratings are limiting values above which the serviceability of the diode may be impaired. =Tak Cheong Logo =Device Code TCMTZJxxx =A, B, C or D =Black Specification Features: Zener Voltage Range 2.0 to 39 Volts DO-34 Package (JEDEC DO-204) Through-Hole Device Type Mounting Cathode Anode Hermetically Sealed Glass Compression Bonded Construction ELECTRICAL SYMBOL All External Surfaces Are Corrosion Resistant And Lads Are Readily Solderable RoHS Compliant Solder Hot Dip Tin (Sn) Terminal Finish Cathode Indicated By Polarity Band Electrical Characteristics TA = 25C unless otherwise noted VZ@IZT T Device Type Tolerance Min Nom Max TCMTZJ2V0 TCMTZJ2V2 TCMTZJ2V4 TCMTZJ2V7 TCMTZJ3V0 TCMTZJ3V3 TCMTZJ3V6 TCMTZJ3V9 TCMTZJ4V3 Number: DB-054 July 2008 / C A B A B A B A B A B A B A B A B A B C 5.5% 4.3% 4.0% 4.1% 3.9% 4.0% 4.0% 3.9% 3.7% 3.4% 3.4% 3.1% 3.6% 3.3% 3.5% 3.3% 3.0% 3.0% 3.0% 1.880 2.020 2.120 2.220 2.330 2.430 2.540 2.690 2.850 3.010 3.160 3.320 3.455 3.600 3.740 3.890 4.040 4.170 4.300 1.990 2.110 2.210 2.315 2.425 2.530 2.645 2.800 2.960 3.115 3.270 3.425 3.575 3.723 3.875 4.025 4.165 4.300 4.435 2.100 2.200 2.300 2.410 2.520 2.630 2.750 2.910 3.070 3.220 3.380 3.530 3.695 3.845 4.010 4.160 4.290 4.430 4.570 Izt (mA) Zzt@Izt (Ohms) Max Zzk@Izk (Ohms) Max Izk (mA) IR @VR (uA) Max VR (V) 5 100 1000 0.5 120 0.5 5 100 1000 0.5 100 0.7 5 100 1000 0.5 120 1.0 5 110 1000 0.5 100 1.0 5 120 1000 0.5 50 1.0 5 120 1000 0.5 20 1.0 5 100 1000 1 10 1.0 5 100 1000 1 5 1.0 5 100 1000 1 5 1.0 Page 1 TCMTZJ2V0 through TCMTZJ39V TAK CHEONG TAK CHEONG (R) SEMICONDUCTOR Electrical Characteristics TA = 25C unless otherwise noted Izt VZ@Izt T Device Type (mA) Tolerance Min Nom Max TCMTZJ4V7 TCMTZJ5V1 TCMTZJ5V6 TCMTZJ6V2 TCMTZJ6V8 TCMTZJ7V5 TCMTZJ8V2 TCMTZJ9V1 TCMTZJ10V TCMTZJ11V TCMTZJ12V TCMTZJ13V TCMTZJ15V TCMTZJ16V TCMTZJ18V TCMTZJ20V Number: DB-054 July 2008 / C A B C A B C A B C A B C A B C A B C A B C A B C A B C D A B C A B C A B C A B C A B C A B C A B C D 2.6% 2.8% 2.7% 2.6% 2.6% 2.7% 2.4% 2.5% 2.6% 2.7% 2.6% 2.5% 2.6% 2.6% 2.6% 2.7% 2.6% 2.5% 2.6% 2.6% 2.5% 2.6% 2.5% 2.6% 2.6% 2.6% 2.5% 2.5% 2.6% 2.6% 2.5% 2.5% 2.6% 2.6% 2.6% 2.6% 2.6% 2.5% 2.6% 2.5% 2.6% 2.6% 2.5% 2.5% 2.5% 2.6% 2.5% 2.5% 2.5% 2.5% 4.44 4.55 4.68 4.81 4.94 5.09 5.28 5.45 5.61 5.78 5.96 6.12 6.29 6.49 6.66 6.85 7.07 7.29 7.53 7.78 8.03 8.29 8.57 8.83 9.12 9.41 9.70 9.94 10.18 10.50 10.82 11.13 11.44 11.74 12.11 12.55 12.99 13.44 13.89 14.35 14.80 15.25 15.69 16.22 16.82 17.42 18.02 18.63 19.23 19.72 4.56 4.68 4.81 4.94 5.07 5.23 5.41 5.59 5.76 5.94 6.12 6.28 6.46 6.66 6.84 7.04 7.26 7.48 7.73 7.99 8.24 8.51 8.79 9.07 9.36 9.66 9.95 10.19 10.45 10.78 11.10 11.42 11.74 12.05 12.43 12.88 13.33 13.79 14.26 14.72 15.19 15.65 16.10 16.64 17.26 17.88 18.49 19.11 19.73 20.22 4.68 4.80 4.93 5.07 5.20 5.37 5.55 5.73 5.91 6.09 6.27 6.44 6.63 6.83 7.01 7.22 7.45 7.67 7.92 8.19 8.45 8.73 9.01 9.30 9.59 9.90 10.20 10.44 10.71 11.05 11.38 11.71 12.03 12.35 12.75 13.21 13.66 14.13 14.62 15.09 15.57 16.04 16.51 17.06 17.70 18.33 18.96 19.59 20.22 20.72 Zzt@Izt (Ohms) Max Zzk@Izk (Ohms) Max Izk (mA) IR@VR (uA) Max VR (V) 5 80 900 1 5 1.0 5 80 800 1 5 1.5 5 60 500 1 5 2.5 5 60 300 1 5 3.0 5 20 150 0.5 2 3.5 5 20 120 0.5 0.5 4.0 5 20 120 0.5 0.5 5.0 5 25 120 0.5 0.5 6.0 5 30 120 0.5 0.2 7.0 5 30 120 0.5 0.2 8.0 5 30 110 0.5 0.2 9.0 5 35 110 0.5 0.2 10 5 40 110 0.5 0.2 11 5 40 150 0.5 0.2 12 5 45 150 0.5 0.2 13 5 55 200 0.5 0.2 15 Page 2 TAK CHEONG (R) Electrical Characteristics TA = 25C unless otherwise noted VZ@Izt T Device Type Tolerance Min Nom Max SEMICONDUCTOR Izt (mA) A 2.2% 20.15 20.68 21.20 B 2.5% 20.64 21.18 21.71 TCMTZJ22V 5 C 2.5% 21.08 21.63 22.17 D 2.5% 21.52 22.08 22.63 A 2.5% 22.05 22.62 23.18 B 2.5% 22.61 23.19 23.77 TCMTZJ24V 5 C 2.5% 23.12 23.72 24.31 D 2.5% 23.63 24.24 24.85 A 2.5% 24.26 24.89 25.52 B 2.5% 24.97 25.62 26.26 TCMTZJ27V 5 C 2.5% 25.63 26.29 26.95 D 2.5% 26.29 26.97 27.64 A 2.5% 26.99 27.69 28.39 B 2.5% 27.70 28.42 29.13 TCMTZJ30V 5 C 2.5% 28.36 29.09 29.82 D 2.5% 29.02 29.77 30.51 A 2.5% 29.68 30.45 31.22 B 2.5% 30.32 31.10 31.88 TCMTZJ33V 5 C 2.5% 30.90 31.70 32.50 D 2.5% 31.49 32.30 33.11 A 2.5% 32.14 32.97 33.79 B 2.5% 32.79 33.64 34.49 TCMTZJ36V 5 C 2.5% 33.40 34.27 35.13 D 2.5% 34.01 34.89 35.77 A 2.5% 34.68 35.58 36.47 B 2.5% 35.36 36.28 37.19 TCMTZJ39V 5 C 2.5% 36.00 36.93 37.85 D 2.5% 36.63 37.58 38.52 VF (forward voltage) = 1.2 V maximum @ IF = 200mA for all types Zzt@Izt (Ohms) Max Zzk@Izk (Ohms) Max Izk (mA) IR@VR (uA) Max VR (V) 30 200 0.5 0.2 17 35 200 0.5 0.2 19 45 250 0.5 0.2 21 55 250 0.5 0.2 23 65 250 0.5 0.2 25 75 250 0.5 0.2 27 85 250 0.5 0.2 30 Note: 1. The zener voltage subdivision (VZ) is measured 40mS after diode is powered up. 2. The operating resistance (Zzt and Zzk) is measured by superimposing a minute alternation current in the regulated current (Iz). 3. When ordering, please specify tolerance A, B, C or D. Number: DB-054 July 2008 / C Page 3 TAK CHEONG (R) SEMICONDUCTOR Typical Characteristics 1000 500 Total Capacitance [pF] PD-Power Passipation [mW] 600 400 300 200 100 VR = 0V 100 VR = 2V VR = 5V VR = 20V 10 1 0 0 40 80 120 160 Temperature [ ] 0 200 5 10 15 20 25 30 35 40 VZ - Reverse Voltage [V] Figure 1. Power Dissipation vs Ambient Temperature Figure 2. Total Capacitance Valid provided leads at a distance of 0.8mm from case are kept at ambient temperature 1000 10000 Iz=1mA Iz=2mA Ta = 25 Ta = 25 Iz=5mA Forward Current [mA] Differential Zener Impedance [] f = 1MHz Ta = 25 Iz=10mA 100 1 100 10 1 0.1 0.01 0 5 10 15 20 25 30 VZ - Reverse Voltage [V] 35 Figure 3. Differential Impedance vs. Zener Voltage 40 0 0.2 0.4 0.6 0.8 VF - Forw ard Voltage [m V] 1 1.2 Figure 4. Forward Current vs. Forward Voltage 1000 Reverse Current [mA] PD = 500mW Ta = 25 10 0.1 0.001 0 5 10 15 20 25 30 VZ - Reverse Voltage [V] 35 40 Figure 5. Reverse Current vs. Reverse Voltage Number: DB-054 July 2008 / C Page 4 TAK CHEONG (R) SEMICONDUCTOR Package Outline Package Case Outline DO-34 DO-34 Dimension Millimeters Inches Min Max Min Max A 0.46 0.55 0.018 .0022 B 2.16 3.04 0.085 0.120 C 25.40 38.10 1.000 1.500 D 1.27 1.90 0.050 0.075 Note: 1.0 All dimensions are within JEDEC standard. 2.0 DO-34 polarity denoted by cathode band. Number: DB-054 July 2008 / C Page 5 TAK CHEONG (R) DISC LA I MER NOTIC E NOTICE The information presented in this document is for reference only. Tak Cheong reserves the right to make changes without notice for the specification of the products displayed herein. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such improper use of sale. This publication supersedes & replaces all information reviously supplied. For additional information, please visit our website http://www.takcheong.com, or consult your nearest Tak Cheong's sales office for further assistance. Number: DB-100 April 14, 2008 / A