MCR100-3 … MCR100-8
G
A K
TO-92 Plastic Package
Weight approx. 0.18g
MAXIMUM RATINGS (TJ=25°C unless otherwise noted.)
SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.)
®
Dated : 06/12/2003
Rating Symbol Value Unit
Peak Repetitive Forward and Reverse Blocking
Voltage, Note 1
(TJ=25 to 125°C, RGK=1KΩ)
MCR100-3
MCR100-4
MCR100-5
MCR100-6
MCR100-7
MCR100-8
VDRM
and
VRRM
100
200
300
400
500
600
Volts
Forward Current RMS
(All Conduction Angles) IT(RMS) 0.8 Amps
Peak Forward Surge Current, TA=25°C
(1/2 Cycle, Sine Wave, 60Hz) ITSM 10 Amps
Circuit Fusing (t=8.3ms) I2t 0.415 A2s
Peak Gate Power - Forward, TA=25°C PGM 0.1 Watts
Average Gate Power - Forward, TA=25°C PGF(AV) 0.01 Watt
Peak Gate Current - Forward, TA=25°C
(300µs,120PPS) IGFM 1 Amp
Peak Gate Voltage - Reverse VGRM 5 Volts
Operating Junction Temperature Range @ Rated VRRM and VDRM T
J -40 to +125 °C
Storage Temperature Range Ts -40 to +150 °C
Note 1. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied
concurrent with negative potential on the anode.
GSP FORM A IS AVAILABLE
MCR100-3 … MCR100-8
CHARACTERISTICS (TC=25°C, RGK=1KΩ unless otherwise noted.)
Characteristic Symbol Min Max Unit
Peak Forward or Reverse Blocking Current
(VAK=Rated VDRM or VRRM)
IDRM,IRRM
-
10
µA
Forward “On” Voltage
(ITM=1A Peak @TA=25°C)
VTM - 1.7 Volts
Gate Trigger Current(Continuous dc),Note 1
(Anode Voltage=7Vdc,RL=100 Ohms)
IGT - 200 µA
Gate Trigger Voltage(Continuous dc)
(Anode Voltage=7Vdc,RL=100 Ohms)
(Anode Voltage=Rated VDRM,RL=100 Ohms)
VGT -
0.8 Volts
Holding Current
(Anode Voltage=7Vdc,initiating current=20mA)
IH - 5 mA
Note 1. RGK current is not included in measurement.
GSP FORM A IS AVAILABLE
SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.)
®
Dated : 06/12/2003
MCR100-3 … MCR100-8
SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.)
®
Dated : 06/12/2003
Latching Current
Holding Current
Figure 5. Typical RMS Current Derating
TJ, Junction Temperature (〜
C)
Figure 3. Typical Holding Curent Versus
Junction Temperature
30〜
C
35
TC, Maximum Allowable Case
Temperature (〜
C)
0.1
80
60
50
40
70
00.2
120
110
100
90
-10-40 -25
10 520
Figure 6. Typical On-State Characteristics
VT, Instantaneous On-State Voltage (volts)
TJ, Junction Temperature (〜
C)
Figure 4. Typical Latching Curent Versus
Junction Temperature
MAXIMUM @ TJ=25〜
C
5
IT,Instantaneous On-State
Current (AMPS)
DC
90〜
C
0.4
60〜
C
0.3
180〜
C
0.5
0.1
1.10.80.5
1
8050 65 95 110
10
-40
10 -10-25
2.01.71.4 2.92.62.3 3.53.2
MAXIMUM @ TJ=110〜
C
95
503520 8065 110
Figure 1. Typical Gate Trigger Curent Versus
Junction Temperature
TJ, Junction Temperature (〜
C)
Gate Trigger Current
20
-40
1000
10
100
-10-25 20
5
70
60
50
40
30
100
90
80
TJ, Junction Temperature (〜
C)
Figure 2. Typical Gate Trigger Voltage
Versus Junction Temperature
Gate Trigger Voltage (volts)
655035 9580
100
0.2
110
1000
-25 -10-40
0.7
0.6
0.5
0.4
0.3
1.0
0.9
0.8
35
520 8050 65 11095
IT(RMS), RMS On-State Current (AMPS)
(µA)
(µA)
(µA)
