METAL SMALL-SIGNAL TRANSISTORS (continued) Darlington Transistors These transistors are characterized for very high gain and input impedance applications. Devices are of monolithic con- struction. V(BR) CEO Ic Ic VCE (sat) Device Volts mA hee @ Volts @ Ic & \p Package Type Min Max Min | Max I mA Max | mA | mA NPN TO-18 MM6427 40 300 5000 10 1.5 100 0.1 TO-39 BSS52 80 4000 2000 _ 500 1.6 1000 4.0 BSS51 60 1000 2000 _ 500 1.6 1000 1.0 BSS50 45 1000 2000 500 1.6 1000 4.0 High-Frequency Amplifiers/Oscillators The transistors shown are designed for use as both oscillators and amplifiers at UHF and VHF frequencies. Devices are listed in decreasing order of ViBR)CEQ with each line. V(BR)CEO Gpe NF tr Cobo Device Volts here Ic dB dB @ f MHz @ ~ Ic pF | Package Type Min Min | mA Min Max ; MHz Min | mA Max NPN | TO-72 | 2Notst | 15 | 20 | 3.0 | 15 | 6.0 | 60 | 600 | 4.0 | 17 | PNP [ TO-72 | 2N4261# [ 15 | 30 | 10 [ = | - | - | 1600 | 10 | | *JAN available **JAN/JANTX available High-Voltage/High-Current Amplifiers +JANMANTX/SANTXVIJANS available #JANNANTXIJANTXV available The following table lists Motorola standard devices that have high Collector-Emitter Breakdown Voltage. Devices are listed in decreasing order of VigRycEO within each package type. Verceo | 'c VCE (sat) fr Device Volts mA | hee Ie Volts @ Ic & Ig MHz @ Ic Comments Package Type Min Max Min | mA Max mA | mA Min {| mA NPN TO-18 BSS73 300 500 40 30 0.5 50 5 100 20 BSS72 250 500 40 30 0.5 50 5 100 20 8SS71 200 500 40 30 0.5 50 5 100 20 BC394 180 500 30 10 0.3 10 1.0 50 20 TO-39 2N3439#4 350 1000 40 20 0.5 50 4 15 10 Exists under CECC MM421 325 1000 25 30 5.0 30 3 15 10 BF259 300 100 25 30 1.0 30 6 110 30 BF258 250 100 25 30 1.0 30 6 110 30 2N344 250 1000 40 20 0.5 50 4 15 10 Exists under CECC BSS78 250 500 40 30 0.4 30 3 70 20 BF337 200 200 20 30 _ _ _ 80 30 BSS77 200 500 40 30 0.4 30 3 70 20 Ey JAN JANTX, JANTXV available MOTOROLA EUROPEAN MASTER SELECTION GUIDE 3-46