SRAM
MT5C1008
Austin Semiconductor, Inc.
MT5C1008
Rev. 6.0 2/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
FEATURES
• High Speed: 12, 15, 20, 25, 30, 35, 45, 55 and 70 ns
• Battery Backup: 2V data retention
• Low power standby
• High-performance, low-power CMOS process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE1\, CE2, and OE\
options.
• All inputs and outputs are TTL compatible
OPTIONS MARKING
• Timing
12ns access -12 (contact factory)
15ns access -15
20ns access -20
25ns access -25
35ns access -35
45ns access -45
55ns access -55*
70ns access -70*
• Package(s)•
Ceramic DIP (400 mil) C No. 111
Ceramic DIP (600 mil) CW No. 112
Ceramic LCC EC No. 207
Ceramic LCC ECA No. 208
Ceramic Flatpack F No. 303
Ceramic SOJ DCJ No. 501
Ceramic SOJ SOJ No. 507
• 2V data retention/low power L
*Electrical characteristics identical to those provided for the 45ns
access devices.
PIN ASSIGNMENT
(Top View)
AVAILABLE AS MILITARY
SPECIFICATIONS
•SMD 5962-89598
•MIL-STD-883
NC 1 32 V
CC
A16 2 31 A15
A14 3 30 CE2
A12 4 29 WE\
A7 5 28 A13
A6 6 27 A8
A5 7 26 A9
A4 8 25 A11
A3 9 24 OE\
A2 10 23 A10
A1 11 22 CE\
A0 12 21 DQ8
DQ1 13 20 DQ7
DQ2 14 19 DQ6
DQ3 15 18 DQ5
V
SS
16 17 DQ4
NC 1 32 V
CC
A16 2 31 A15
A14 3 30 CE2
A12 4 29 WE\
A7 5 28 A13
A6 6 27 A8
A5 7 26 A9
A4 8 25 A11
A3 9 24 OE\
A2 10 23 A10
A1 11 22 CE\
A0 12 21 DQ8
DQ1 13 20 DQ7
DQ2 14 19 DQ6
DQ3 15 18 DQ5
V
SS
16 17 DQ4
NC 1 32 V
CC
A16 2 31 A15
A14 3 30 CE2
A12 4 29 WE\
A7 5 28 A13
A6 6 27 A8
A5 7 26 A9
A4 8 25 A11
A3 9 24 OE\
A2 10 23 A10
A1 11 22 CE\
A0 12 21 DQ8
DQ1 13 20 DQ7
DQ2 14 19 DQ6
DQ3 15 18 DQ5
V
SS
16 17 DQ4
32-Pin DIP (C, CW)
32-Pin CSOJ (SOJ) 32-Pin LCC (EC)
32-Pin SOJ (DCJ)
32-Pin Flat P ack (F) 32-Pin LCC (ECA)
GENERAL DESCRIPTION
The MT5C1008 SRAM employs high-speed, low power
CMOS designs using a four-transistor memory cell, and are
fabricated using double-layer metal, double-layer polysilicon
technology.
For design flexibility in high-speed memory
applications, this device offers dual chip enables (CE1\, CE2)
and output enable (OE\). These control pins can place the
outputs in High-Z for additional flexibility in system design.
All devices operate from a single +5V power supply and all
inputs and outputs are fully TTL compatible.
Writing to these devices is accomplished when write
enable (WE\) and CE1\ inputs are both LOW and CE2 is HIGH.
Reading is accomplished when WE\ and CE2 remain HIGH and
CE1\ and OE\ go LOW. The devices offer a reduced power
standby mode when disabled, allowing system designs to
achieve low standby power requirements.
The “L” version offers a 2V data retention mode, re-
ducing current consumption to 1mA maximum.
128K x 8 SRAM
WITH DUAL CHIP ENABLE
For more products and information
please visit our web site at
www.austinsemiconductor.com
4 3 2 1 32 31 30
A12
A14
A10
NC
V
CC
A15
CE2
14 15 16 17 18 19 20
DQ2
DQ3
V
SS
DQ4
DQ5
DQ6
DQ7
5
6
7
8
9
10
11
12
13
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
29
28
27
26
25
24
23
22
21
WE
A13
A8
A9
A11
OE
A10
CE1
DQ8
\
\
\
6
SRAM
MT5C1008
Austin Semiconductor, Inc.
MT5C1008
Rev. 6.0 2/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
FUNCTIONAL BLOCK DIAGRAM
ROW DECODER
1,048,576-BIT
MEMORY ARRAY
I/O CONTROL
V
CC
GND
D
Q
8
DQ1
CE1\
CE2
OE\
WE\
A
A
A
A
A
A
A
A
A
COLUMN DECODER
A A A A A A A A POWER
DOWN
(LSB)
(LSB)
NOTE: The two least significant row address bits (A8 and A6) are encoded using gray code.
MODE OE\ CE1\ CE2 WE\ DQ POWER
STANDBY X H X X HIGH-Z STANDBY
STANDBY X X L X HIGH-Z STANDBY
READ L L H H Q ACTIVE
READ H L H H HIGH-Z ACTIVE
WRITE X L H L D ACTIVE
TRUTH TABLE
SRAM
MT5C1008
Austin Semiconductor, Inc.
MT5C1008
Rev. 6.0 2/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage Range (Vcc)...............................-.5V to +6.0V
Storage Temperature ....................................-65°C to +150°C
Short Circuit Output Current (per I/O)….......................20mA
Voltage on any Pin Relative to Vss................-.5V to Vcc+1 V
Max Junction Temperature**.......................................+150°C
Power Dissipation .....................................................................1 W
*Stresses at or greater than those listed under "Absolute Maxi-
mum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated
in the operation section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended
periods will affect reliability. Refer to page 17 of this
datasheet for a technical note on this subject.
** Junction temperature depends upon package type, cycle
time, loading, ambient temperature and airflow , and humidity .
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TC < 125oC & -45oC to +85oC; VCC = 5.0V +10%)
DESCRIPTION CONDITIONS SYM MAX UNITS NOTES
Input Capacitance (A0-A16) C
I
12 pF 4
Output Capacitance C
O
14 pF 4
Input Capacitance (CE\, WE\, OE\) C
I
20 pF 4
T
A
= 25
o
C, f = 1MHz
V
CC
= 5V
CAPACITANCE
SYM -12 -15 -20 -25 -35 -45 UNITS NOTES
I
CCSP
250 180 150 140 135 125 mA 3
I
CCLP *
250 180 140 130 125 115 mA
Power Supply
Current: Standby I
SBT
25 25 25 25 25 25 mA
I
SBC
10 10 10 10 10 10 mA
PARAMETER
Power Supply
Current: Operating
CE\ < VIL; OE\, WE\, and CE2>V
IH
VCC = MAX, f = MAX = 1/tRC (MIN)
Output Open
*L version only
CE\ > VCC -0.2V; VCC = MAX
VIL < VSS -0.2V
VIH > VCC -0.2V; F = 0 Hz
CE\=VIH, CE2=V
IL
; Other Inputs at
<V
IL
, >V
IH
, VCC = MAX
f = 0 Hz
MAX
CONDITIONS
DESCRIPTION CONDITIONS SYM MIN MAX UNITS NOTES
Input High (Logic 1) Voltage VIH 2.2 VCC+0.5 V1
Input Low (Logic 0) Voltage VIL -0.5 0.8 V 1, 2
Input Leakage Current 0V<VIN<VCC ILI-10 10 µA
Output Leakage Current Output(s) disabled
0V<VOUT<VCC ILO-10 10 µA
Output High Voltage IOH=-4.0mA VOH 2.4 V 1
Output Low Voltage IOL=8.0mA VOL 0.4 V 1
SRAM
MT5C1008
Austin Semiconductor, Inc.
MT5C1008
Rev. 6.0 2/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (-55oC < TC < 125oC & -40oC to +85oC; VCC = 5.0V +10%)
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES
READ CYCLE
READ cycle time tRC 12 15 20 25 35 45 ns
Address access time tAA 12 15 20 25 35 45 ns
Chip Enable access time tACE 12 15 20 25 35 45 ns
Output hold from address change tOH 333333 ns
Chip Enable to output in Low-Z tLZCE 333333 ns4, 6, 7
Chip disable to output in High-Z tHZCE 7 7 8 10 15 20 ns 4, 6, 7
Output Enable access time tAOE 7 7 7 10 15 20 ns 4, 6, 7
Output Enable to output in Low-Z tLZOE 000000 ns
Output disable to output in High-Z tHZOE 7 7 8 10 15 20 ns 4, 6, 7
WRITE CYCLE
WRITE cycle time tWC 12 15 20 25 35 45 ns
Chip Enable to end of write tCW 11 12 15 20 25 35 ns
Address valid to end of write tAW 11 12 15 20 25 35 ns
Address setup time tAS 000000 ns
Address hold from end of write tAH 000005 ns
WRITE pulse width tWP 11 12 15 20 25 35 ns
Data setup time tDS 8 8 10 15 20 20 ns
Data hold time tDH 000000 ns
Write disable to output in Low-Z tLZWE 555555 ns4, 6, 7
Write Enable to output in High-Z tHZWE 7 7 9 10 15 20 ns 4, 6, 7
DESCRIPTION -20
SYMBOL -25 -35 -45-15-12
SRAM
MT5C1008
Austin Semiconductor, Inc.
MT5C1008
Rev. 6.0 2/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
AC TEST CONDITIONS
Input pulse levels ................................... Vss to 3.0V
Input rise and fall times ....................................... 5ns
Input timing reference levels ............................. 1.5V
Output reference levels ..................................... 1.5V
Output load .............................. See Figures 1 and 2
NOTES
1 . All voltages referenced to VSS (GND).
2 . -2V for pulse width < 20ns
3. ICC is dependent on output loading and cycle rates.
The specified value applies with the outputs
unloaded, and f = 1 Hz.
tRC (MIN)
4. This parameter is guaranteed but not tested.
5. Test conditions as specified with the output loading
as shown in Fig. 1 unless otherwise noted.
6. tLZCE, tLZWE, tLZOE, t HZCE, tHZOE and tHZWE
are specified with CL = 5pF as in Fig. 2. Transition is
measured ±200mV typical from steady state voltage,
allowing for actual tester RC time constant.
7. At any given temperature and voltage condition,
tHZCE is less than tLZCE, and tHZWE is less than
tLZWE and tHZOE is less than tLZOE.
8 . WE\ is HIGH for READ cycle.
9. Device is continuously selected. Chip enables and
output enables are held in their active state.
10. Address valid prior to, or coincident with, latest
occurring chip enable.
11. tRC = Read Cycle Time.
1 2 . CE2 timing is the same as CE1\ timing. The
waveform is inverted.
1 3. Chip enable (CE1\, CE2) and write enable (WE\) can
initiate and terminate a WRITE cycle.
Fig. 1 Output Load
Equivalent Fig. 2 Output Load
Equivalent
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
+5V
Q
255 30
480
5 pF
+5V
Q
255
480
123
1
2
3
1
2
3
123
1
23
4
1
23
4
1
23
4
1234
DON’T CARE
UNDEFINED
LOW Vcc DATA RETENTION WAVEFORM
123456789
123456789
123456789
123456789
123
1
2
3
1
2
3
123
1234
1
23
4
1
23
4
1234
12345678
12345678
12345678
12345678
123
1
2
3
1
2
3
123
1234
1
23
4
1
23
4
1234
123456789
123456789
123456789
123456789
123
1
2
3
1
2
3
123
1234
1
23
4
1
23
4
1234
12345678
12345678
12345678
12345678
123
1
2
3
1
2
3
123
1234
1
23
4
1
23
4
1234
DA TA RETENTION MODE
VDR > 2V
4.5V 4.5V
VDR
tCDR tR
<VSS + 0.2V
VIH
VIL
VIH
VIL
VCC
CE1\
CE2
DESCRIPTION SYMBOL MIN MAX UNITS NOTES
V
CC
for Retention Data V
DR
2 --- V
Data Retention Current CE\ > (V
CC
- 0.2V)
V
IN
> (V
CC
- 0.2V)
or < 0.2V, f=0 V
CC
= 2V I
CCDR
1.0 mA
Chip Deselect to Data
Retention Time t
CDR
0 --- ns 4
Operation Recovery Time t
R
t
RC
ns 4, 11
CONDITIONS
SRAM
MT5C1008
Austin Semiconductor, Inc.
MT5C1008
Rev. 6.0 2/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
tAA
tOH
tRCtRC
PREVIOUS DATA VALID
VALID
DATA VALID
ADDRESS
DQ
tPD
tPU
tHZCEtACE
tLZCE
tHZOE
tLZOE
tAOE
tRCtRC
DATA VALID
CE\
OE\
DQ
Icc
READ CYCLE NO. 1 8, 9
READ CYCLE NO. 2 7, 8, 10, 12
SRAM
MT5C1008
Austin Semiconductor, Inc.
MT5C1008
Rev. 6.0 2/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
7
WRITE CYCLE NO. 1 12, 13
(Chip Enabled Controlled)
WRITE CYCLE NO. 2 7, 12, 13
(W rite Enabled Controlled)
tDHtDS
tWP1tWP1
tAH
tCW
tAW
tCWtAS
tWCtWC
HIGH Z
DATA VAILD
ADDRESS
CE\
WE\
D
Q
tDH
tWP1tWP1
tAS
tAW
tCW tAH
tCW
tWCtWC
DATA VALID
ADDRESS
CE\
WE\
D
Q
HIGH-Z
NOTE: Output enable (OE\) is inactive (HIGH).
SRAM
MT5C1008
Austin Semiconductor, Inc.
MT5C1008
Rev. 6.0 2/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
MECHANICAL DEFINITIONS*
ASI Case #111 (Package Designator C)
SMD 5962-89598, Case Outline Z
*All measurements are in inches.
D
S1
Pin 1
Se
b
b1
AS2
Q
LL1
MIN MAX
A --- 0.232
b 0.014 0.023
b1 0.038 0.065
c 0.008 0.015
D --- 1.700
E 0.350 0.405
E1 0.390 0.420
e
L 0.125 0.200
L1 0.150 ---
Q 0.015 0.060
S --- 0.100
S1 0.005 ---
S2 0.005 ---
NOTE:
SYMBOL
0.100 BSC
SMD SPECIFICATIONS
Either configuration in detail A is allowed on SMD.
c
NOTE
E
0o to 15oE1
SRAM
MT5C1008
Austin Semiconductor, Inc.
MT5C1008
Rev. 6.0 2/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
ASI Case #112 (Package Designator CW)
SMD 5962-89598, Case Outline X
MECHANICAL DEFINITIONS*
MIN
A 0.089 0.111
b 0.016 0.020
b1 0.045 0.055
b2 0.009 0.011
D 1.585 1.615
E 0.585 0.605
E1 0.595 0.610
e 0.090 0.110
L 0.040 0.060
L1 0.125 0.175
SYMBOL SMD SPECIFICATIONS
eb
b1
L
L1
A
D
Pin 1
E
E1 b2
*All measurements are in inches.
SRAM
MT5C1008
Austin Semiconductor, Inc.
MT5C1008
Rev. 6.0 2/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
MECHANICAL DEFINITIONS*
ASI Case #207 (Package Designator EC)
SMD 5962-89598, Case Outline U
*All measurements are in inches.
b1
L2
Detail A
A
b2
MIN MAX
A 0.080 0.100
b 0.022 0.028
b1 0.006 0.022
b2 0.040 ---
D 0.800 0.840
E 0.392 0.408
e
h
L 0.070 0.080
L1 0.090 0.110
L2 0.003 0.015
SYMBOL
0.012 REF
SMD SPECIFICATIONS
0.050 BSC
D
E
See Detail A
L1
L
ebh x 45o
SRAM
MT5C1008
Austin Semiconductor, Inc.
MT5C1008
Rev. 6.0 2/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11
ASI Case #208 (Package Designator ECA)
SMD 5962-89598, Case Outline M
MECHANICAL DEFINITIONS*
*All measurements are in inches.
E
D
b1
Detail A
A
b2
E1
L1
b
D1
L
See Detail A
e
MIN MAX
A 0.060 0.120
b 0.022 0.028
b1 0.004 0.014
b2 0.040 ---
D 0.442 0.458
D1
E 0.540 0.560
E1
e
L 0.045 0.055
L1 0.075 0.095
0.050 BSC
SYMBOL SMD SPECIFICATIONS
0.300 BSC
0.400 BSC
SRAM
MT5C1008
Austin Semiconductor, Inc.
MT5C1008
Rev. 6.0 2/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
12
MECHANICAL DEFINITIONS*
ASI Case #303 (Package Designator F)
SMD 5962-89598, Case Outline T
*All measurements are in inches.
c
E2
A
Q
E3
MIN MAX
A 0.097 0.125
b 0.015 0.019
c 0.003 0.009
D --- 0.830
E 0.400 0.420
E1 --- 0.450
E2 0.180 ---
E3 0.030 ---
e
L 0.250 0.370
Q 0.026 0.045
S --- 0.045
S1 0.000 ---
SYMBOL SMD SPECIFICATIONS
0.050 BSC
Pin 1
Index
32
17 16
1
Bottom View
D
E
L
e
b
T op View
E1
S1 S
SRAM
MT5C1008
Austin Semiconductor, Inc.
MT5C1008
Rev. 6.0 2/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
13
*All measurements are in inches.
ASI Case #501 (Package Designator DCJ)
SMD 5962-89598, Case Outline 7
MECHANICAL DEFINITIONS*
MIN MAX
A 0.132 0.144
A2 0.026 0.036
B1 0.030 0.040
b 0.015 0.019
D 0.812 0.828
D1 0.740 0.760
E 0.405 0.415
E1 0.435 0.445
E2 0.360 0.380
e
SYMBOL SMD SPECIFICATIONS
0.050 BSC
A
A2
e
b
D
E
D1
E1
E2
B1
SRAM
MT5C1008
Austin Semiconductor, Inc.
MT5C1008
Rev. 6.0 2/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
14
*All measurements are in inches.
ASI Case #507 (Package Designator SOJ)
SMD 5962-89598, Case Outline Y
MECHANICAL DEFINITIONS*
S
e
A
A1
1234567890123456789012345
1
23456789012345678901234
5
1
23456789012345678901234
5
1
23456789012345678901234
5
1
23456789012345678901234
5
1234567890123456789012345
E2
B
B2 B1
MIN MAX
A 0.120 0.165
A1 0.088 0.120
A2
B
B1
B2
B3 0.025 0.045
D 0.816 0.838
D1
E 0.419 0.431
E1 0.430 0.445
E2 0.360 0.380
e
e1
e2 0.005
j
S 0.030 0.040
S1
0.038 TYP
0.005 TYP
0.020 TYP
SYMBOL SMD SPECIFICATIONS
0.050 BSC
0.070 REF
0.010 REF
.030R TYP
0.020 REF
0.75 REF
123
1
2
3
123
123
1
2
3
123
e1
A2
e2
S1
B3
Base
Plane
Seating
Plane
D
E
D1
j
32 1
17 16
E1
See Detail A
Detail A
SRAM
MT5C1008
Austin Semiconductor, Inc.
MT5C1008
Rev. 6.0 2/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
15
*AVAILABLE PROCESSES
IT = Industrial T emperature Range -40oC to +85oC
XT = Extended T emperature Range -55oC to +125oC
883C = Full Military Processing -55oC to +125oC
** OPTIONS
L = 2V Data Retention/Low Power
ORDERING INFORMA TION
EXAMPLE: MT5C1008CW-45/883C EXAMPLE: MT5C1008ECA-25L/XT
Device
Number Package
T
yp
eSpeed
ns Options** Process Device
Number Package
T
yp
eSpeed
ns Options** Process
MT5C1008
MT5C1008 C
CW -12
-12 L
L /*
/* MT5C1008
MT5C1008 EC
ECA -12
-12 L
L /*
/*
MT5C1008
MT5C1008 C
CW -15
-15 L
L /*
/* MT5C1008
MT5C1008 EC
ECA -15
-15 L
L /*
/*
MT5C1008
MT5C1008 C
CW -20
-20 L
L /*
/* MT5C1008
MT5C1008 EC
ECA -20
-20 L
L /*
/*
MT5C1008
MT5C1008 C
CW -25
-25 L
L /*
/* MT5C1008
MT5C1008 EC
ECA -25
-25 L
L /*
/*
MT5C1008
MT5C1008 C
CW -35
-35 L
L /*
/* MT5C1008
MT5C1008 EC
ECA -35
-35 L
L /*
/*
MT5C1008
MT5C1008 C
CW -45
-45 L
L /*
/* MT5C1008
MT5C1008 EC
ECA -45
-45 L
L /*
/*
MT5C1008
MT5C1008 C
CW -55
-55 L
L /*
/* MT5C1008
MT5C1008 EC
ECA -55
-55 L
L /*
/*
MT5C1008
MT5C1008 C
CW -70
-70 L
L /*
/* MT5C1008
MT5C1008 EC
ECA -70
-70 L
L /*
/*
EXAMPLE: MT5C1008F-25L/883C EXAMPLE: MT5C1008DCJ-35/IT
Device
Number Package
T
yp
eSpeed
ns Options** Process Device
Number Package
T
yp
eSpeed
ns Options** Process
MT5C1008 F -12 L /* MT5C1008
MT5C1008 DCJ
SOJ -12
-12 L
L /*
/*
MT5C1008 F -15 L /* MT5C1008
MT5C1008 DCJ
SOJ -15
-15 L
L /*
/*
MT5C1008 F -20 L /* MT5C1008
MT5C1008 DCJ
SOJ -20
-20 L
L /*
/*
MT5C1008 F -25 L /* MT5C1008
MT5C1008 DCJ
SOJ -25
-25 L
L /*
/*
MT5C1008 F -35 L /* MT5C1008
MT5C1008 DCJ
SOJ -35
-35 L
L /*
/*
MT5C1008 F -45 L /* MT5C1008
MT5C1008 DCJ
SOJ -45
-45 L
L /*
/*
MT5C1008 F -55 L /* MT5C1008
MT5C1008 DCJ
SOJ -55
-55 L
L /*
/*
MT5C1008 F -70 L /* MT5C1008
MT5C1008 DCJ
SOJ -70
-70 L
L /*
/*
SRAM
MT5C1008
Austin Semiconductor, Inc.
MT5C1008
Rev. 6.0 2/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
16
ASI TO DSCC PART NUMBER
CROSS REFERENCE
ASI Package Designator EC & ECA
ASI Part # SMD Part #
MT5C1008EC-20/883C 5962-8959838MUA
MT5C1008EC-20L/883C 5962-8959821MUA
MT5C1008EC-25/883C 5962-8959837MUA
MT5C1008EC-25L/883C 5962-8959820MUA
MT5C1008EC-35/883C 5962-8959836MUA
MT5C1008EC-35L/883C 5962-8959819MUA
MT5C1008EC-45/883C 5962-8959835MUA
MT5C1008EC-45L/883C 5962-8959818MUA
MT5C1008EC-55/883C 5962-8959834MUA
MT5C1008EC-55L/883C 5962-8959817MUA
MT5C1008EC-70/883C 5962-8959833MUA
MT5C1008EC-70L/883C 5962-8959816MUA
MT5C1008ECA-20/883C 5962-8959838MMA
MT5C1008ECA-20L/883C 5962-8959821MMA
MT5C1008ECA-25/883C 5962-8959837MMA
MT5C1008ECA-25L/883C 5962-8959820MMA
MT5C1008ECA-35/883C 5962-8959836MMA
MT5C1008ECA-35L/883C 5962-8959819MMA
MT5C1008ECA-45/883C 5962-8959835MMA
MT5C1008ECA-45L/883C 5962-8959818MMA
MT5C1008ECA-55/883C 5962-8959834MMA
MT5C1008ECA-55L/883C 5962-8959817MMA
MT5C1008ECA-70/883C 5962-8959833MMA
MT5C1008ECA-70L/883C 5962-8959816MMA
ASI Package Designator C & CW
ASI Part # SMD Part #
MT5C1008C-20/883C 5962-8959838MZA
MT5C1008C-20L/883C 5962-8959821MZA
MT5C1008C-25/883C 5962-8959837MZA
MT5C1008C-25L/883C 5962-8959820MZA
MT5C1008C-35/883C 5962-8959836MZA
MT5C1008C-35L/883C 5962-8959819MZA
MT5C1008C-45/883C 5962-8959835MZA
MT5C1008C-45L/883C 5962-8959818MZA
MT5C1008C-55/883C 5962-8959834MZA
MT5C1008C-55L/883C 5962-8959817MZA
MT5C1008C-70/883C 5962-8959833MZA
MT5C1008C-70L/883C 5962-8959816MZA
MT5C1008CW-20/883C 5962-8959838MXA
MT5C1008CW-20L/883C 5962-8959821MXA
MT5C1008CW-25/883C 5962-8959837MXA
MT5C1008CW-25L/883C 5962-8959820MXA
MT5C1008CW-35/883C 5962-8959836MXA
MT5C1008CW-35L/883C 5962-8959819MXA
MT5C1008CW-45/883C 5962-8959835MXA
MT5C1008CW-45L/883C 5962-8959818MXA
MT5C1008CW-55/883C 5962-8959834MXA
MT5C1008CW-55L/883C 5962-8959817MXA
MT5C1008CW-70/883C 5962-8959833MXA
MT5C1008CW-70L/883C 5962-8959816MXA
ASI Package Designator DCJ & SOJ
ASI Part # SMD Part #
MT5C1008DCJ-20/883C 5962-8959838M7A
MT5C1008DCJ-20L/883C 5962-8959821M7A
MT5C1008DCJ-25/883C 5962-8959837M7A
MT5C1008DCJ-25L/883C 5962-8959820M7A
MT5C1008DCJ-35/883C 5962-8959836M7A
MT5C1008DCJ-35L/883C 5962-8959819M7A
MT5C1008DCJ-45/883C 5962-8959835M7A
MT5C1008DCJ-45L/883C 5962-8959818M7A
MT5C1008DCJ-55/883C 5962-8959834M7A
MT5C1008DCJ-55L/883C 5962-8959817M7A
MT5C1008DCJ-70/883C 5962-8959833M7A
MT5C1008DCJ-70L/883C 5962-8959816M7A
MT5C1008SOJ-20/883C 5962-8959838MYA
MT5C1008SOJ-20L/883C 5962-8959821MYA
MT5C1008SOJ-25/883C 5962-8959837MYA
MT5C1008SOJ-25L/883C 5962-8959820MYA
MT5C1008SOJ-35/883C 5962-8959836MYA
MT5C1008SOJ-35L/883C 5962-8959819MYA
MT5C1008SOJ-45/883C 5962-8959835MYA
MT5C1008SOJ-45L/883C 5962-8959818MYA
MT5C1008SOJ-55/883C 5962-8959834MYA
MT5C1008SOJ-55L/883C 5962-8959817MYA
MT5C1008SOJ-70/883C 5962-8959833MYA
MT5C1008SOJ-70L/883C 5962-8959816MYA
ASI Package Designator F
ASI Part # SMD Part #
MT5C1008F-20/883C 5962-8959838MTA
MT5C1008F-20L/883C 5962-8959821MTA
MT5C1008F-25/883C 5962-8959837MTA
MT5C1008F-25L/883C 5962-8959820MTA
MT5C1008F-35/883C 5962-8959836MTA
MT5C1008F-35L/883C 5962-8959819MTA
MT5C1008F-45/883C 5962-8959835MTA
MT5C1008F-45L/883C 5962-8959818MTA
MT5C1008F-55/883C 5962-8959834MTA
MT5C1008F-55L/883C 5962-8959817MTA
MT5C1008F-70/883C 5962-8959833MTA
MT5C1008F-70L/883C 5962-8959816MTA
* ASI part number is for reference only. Orders received referencing
the SMD part number will be processed per the SMD.
SRAM
MT5C1008
Austin Semiconductor, Inc.
MT5C1008
Rev. 6.0 2/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
17
D ATE: 2/6/01
Technical Note:
128Kx8 SRAM – Maximum Recommended Supply
Voltage and Ambient T emperature
Compliance:
This product fully meets and is tested in compliance with SMD# 5962-89598 and tested in accordance
with JESD78.
Specific Product Affected:
Die Manufacturer: Alliance Semiconductor Corporation
Die Name: AS2008SA
Device Types: MT5C1008 , MT5C1009
Speed Grades: All
Package Designators: All
Identifying Date Code Marking: Change implemented on product starting with date code 0100.
Characteristic Identified:
Austin Semiconductor, Inc. has received notification from this die vendor, Alliance Semiconductor Corp.,
that operation at high Vcc’ s of 6 volts and beyond may result in a latch-up condition. This can cause
permanent damage to the device.
Recommendation:
During use in system applications and during manufacturing processes, including Burn-In and T est, the
devices should not be subjected to Vcc Supply Voltages higher than 5.5Volts at 125°C.