2N6287 Silicon PNP Darlington Transistor Power Amplifier Description: The 2N6287 is silicon PNP Darlington transistor in a TO3 type case designed for general-purpose amplifier and low-frequency switching applications. Features: D High DC Current Gain @ IC = 10A: hFE = 4000 Typ (NTE252) D Collector-Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Monolithic Construction with Built-In Base-Emitter Shunt Resistors Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.915W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.09C/W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 100 - - V OFF Characteristics Collector-Emitter SustainingVoltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 100mA, IB = 0 ICEO VCE = 50V, IE = 0 - - 1.0 mA ICEX VCE = 100V, VBE(off) = 1.5V - - 0.5 mA VCE = 100V, VBE(off) = 1.5V, TA = +150C - - 5.0 mA VBE = 5V, IC = 0 - - 2.0 mA IEBO Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 3V, IC = 10A 750 - 18000 VCE = 3V, IC = 20A 100 - - IC = 10A, IB = 40mA - - 2.0 V IC = 20A, IB = 200mA - - 3.0 V ON Characteristics (Note 1) DC Current Gain hFE Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) IC = 20A, IB = 200mA - - 4.0 V Base-Emitter ON Voltage VBE(on) VCE = 3V, IC = 10A - - 2.8 V Dynamic Characteristics Small-Signal Current Gain hfe VCE = 3V, IC = 10A, f = 1kHz 300 - - Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio |hfe| VCE = 3V, IC = 10A, f = 1MHz 4.0 - - MHz Output Capacitance Cob VCB = 10V, IE = 0, f = 0.1MHz - - 600 pF Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2% .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane C B .312 (7.93) Min Emitter .040 (1.02) E 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case