SQJQ904E www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V (D-S) 175 C MOSFET FEATURES PowerPAK(R) 8 x 8L Dual * TrenchFET(R) power MOSFET * AEC-Q101 qualified D1 * 100 % Rg and UIS tested D2 8 m m 1 8.1 mm Top View 4 G2 3 S2 2 S1 1 G1 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D1 Bottom View PRODUCT SUMMARY VDS (V) G1 40 RDS(on) () at VGS = 10 V G2 0.0034 ID (A) per leg 100 Configuration Dual Package D2 S1 N-Channel MOSFET PowerPAK 8 x 8L S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 40 Gate-source voltage VGS 20 Continuous drain current TC = 25 Ca TC = 125 C Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b L = 0.1 mH TC = 25 C TC = 125 C Operating junction and storage temperature range ID 64 100 IDM 300 IAS 50 EAS 125 TJ, Tstg Soldering recommendations (peak temperature) d, e V 100 IS PD UNIT 75 25 -55 to +175 260 A mJ W C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c SYMBOL LIMIT RthJA 85 RthJC 2 UNIT C/W Notes a. Package limited. b. Pulse test; pulse width 300 s, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 8 x 8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S17-0256-Rev. A, 20-Feb-17 Document Number: 68442 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ904E www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0, ID = 250 A 40 - - VGS(th) VDS = VGS, ID = 250 A 2.5 3 3.5 VDS = 0 V, VGS = 20 V UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b IGSS IDSS ID(on) RDS(on) gfs - - 100 VGS = 0 V VDS = 20 V - - 1 VGS = 0 V VDS = 40 V, TJ = 125 C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 C - - 150 VGS = 10 V VDS 5 V 40 - - VGS = 10 V ID = 20 A - 0.0029 0.0034 VGS = 10 V ID = 20 A, TJ = 125 C - - 0.0074 VGS = 10 V ID = 20 A, TJ = 175 C - - 0.0091 - 80 - VDS = 15 V, ID = 15 A V nA A A S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Gate-source charge c Gate-drain charge c Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c VGS = 0 V VDS = 20 V, f = 1 MHz Qg Qgs VGS = 10 V VDS = 20 V, ID = 40 A Qgd Rg f = 1 MHz td(on) tr td(off) VDD = 20 V, RL = 0.5 ID 40 A, VGEN = 10 V, Rg = 1 tf Source-Drain Diode Ratings and Characteristics - 4530 5900 - 2750 3300 - 168 220 - 60 75 - 16 - - 5 - 0.5 1 2 - 15.5 20 pF nC - 4.6 6.2 - 30 38 - 4 7 - - 200 A - 1 1.5 V ns b Pulsed current a ISM Forward voltage VSD IF = 40 A, VGS = 0 Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-0256-Rev. A, 20-Feb-17 Document Number: 68442 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ904E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Axis Title Axis Title 150 80 10000 64 1000 1st line 2nd line 90 60 100 30 1000 48 1st line 2nd line VGS = 10 V thru 5 V 2nd line ID - Drain Current (A) 120 2nd line ID - Drain Current (A) 10000 TC = 25 C 32 100 16 TC = 125 C VGS = 4 V 0 0 6 12 18 24 TC = -55 C 0 10 30 10 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 10 Axis Title Axis Title 10000 120 0.010 10000 1000 60 40 100 TC = 125 C 20 0.008 1000 0.006 1st line 2nd line TC = 25 C 80 2nd line RDS(on) - On-Resistance () 100 1st line 2nd line 2nd line gfs - Transconductance (S) TC = -55 C 0.004 100 VGS = 4.5 V 0.002 VGS = 10 V 0 10 0 3 6 9 12 0.000 10 0 15 20 40 Transconductance On-Resistance vs. Drain Current Axis Title 100 2 TC = -55 C 0 10 4 6 8 10 10000 ID = 15 A VDS = 20 V 8 1000 6 1st line 2nd line TC = 25 C 2nd line VGS - Gate-to-Source Voltage (V) 1000 6 1st line 2nd line 2nd line ID - Drain Current (A) 8 TC = 125 C 4 100 2 0 10 0 20 40 60 80 VGS - Gate-to-Source Voltage (V) 2nd line Qg - Total Gate Charge (nC) 2nd line Transfer Characteristics Gate Charge S17-0256-Rev. A, 20-Feb-17 120 10 10000 2 100 ID - Drain Current (A) 2nd line Axis Title 0 80 ID - Drain Current (A) 2nd line 10 4 60 100 Document Number: 68442 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ904E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 ID = 10 A 10 VGS = 10 V 1000 1.4 1.1 100 VGS = 7 V 0.8 0.5 0 25 50 0.1 100 0.01 0.001 10 -50 -25 75 100 125 150 175 10 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (C) 2nd line VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 0.015 0.5 10000 10000 0.1 1000 0.009 TJ = 150 C 0.006 100 0.003 ID = 5 mA 1000 -0.3 1st line 2nd line 2nd line VGS(th) Variance (V) 0.012 1st line 2nd line 2nd line RDS(on) - On-Resistance () 1000 TJ = 25 C TJ = 150 C 1 1st line 2nd line 2nd line IS - Source Current (A) 1.7 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.0 -0.7 100 ID = 250 A -1.1 TJ = 25 C 0.000 -1.5 10 0 2 4 6 8 10 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Temperature (C) 2nd line On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title 10000 ID = 1 mA 51 1000 47 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 55 43 100 39 35 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (C) 2nd line Drain Source Breakdown vs. Junction Temperature S17-0256-Rev. A, 20-Feb-17 Document Number: 68442 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ904E www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 C, unless otherwise noted) 1000 IDM Limited 100 ID - Drain Current (A) 1 ms 10 10 ms 100 ms ID Limited Limited by RDS(on)* 1 s, 10 s, DC 1 0.1 0.01 0.01 BVDSS Limited TC = 25 C Single Pulse 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Normalized Effective Transient Thermal Impedance Safe Operating Area 1 Duty cycle = 0.5 Notes: 0.2 0.1 PDM 0.1 t1 0.05 t2 t 1. Duty cycle, D = t1 2 2. Per unit base = RthJA = 65 C/W 3. TJM - TA = PDMZthJA (t) 4. Surface mounted 0.02 Single pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S17-0256-Rev. A, 20-Feb-17 Document Number: 68442 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ904E www.vishay.com Vishay Siliconix Normalized Effective Transient Thermal Impedance THERMAL RATINGS (TA = 25 C, unless otherwise noted) 1 Duty cycle = 0.5 0.2 0.1 0.1 0.05 Single pulse 0.02 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note * The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) - Normalized Transient Thermal Impedance Junction-to-Case (25 C) are given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68442. S17-0256-Rev. A, 20-Feb-17 Document Number: 68442 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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