SQJQ904E
www.vishay.com Vishay Siliconix
S17-0256-Rev. A, 20-Feb-17 1Document Number: 68442
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 8 x 8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
PRODUCT SUMMARY
VDS (V) 40
RDS(on) () at VGS = 10 V 0.0034
ID (A) per leg 100
Configuration Dual
Package PowerPAK 8 x 8L
PowerPAK® 8 x 8L Dual
Top View Bottom View
1
8 mm
8.1 mm
1
G1
2
S1
3
S2
4
G2
D1
D2
1
8 mm
8.1 mm
N-Channel MOSFET
D1
G1
S1
N-Channel MOSFET
D2
G2
S2
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 40 V
Gate-source voltage VGS ± 20
Continuous drain current TC = 25 °Ca ID
100
A
TC = 125 °C 64
Continuous source current (diode conduction) a IS100
Pulsed drain current bIDM 300
Single pulse avalanche current L = 0.1 mH IAS 50
Single pulse avalanche energy EAS 125 mJ
Maximum power dissipation bTC = 25 °C PD
75 W
TC = 125 °C 25
Operating junction and storage temperature range TJ, Tstg -55 to +175 °C
Soldering recommendations (peak temperature) d, e 260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-ambient PCB mount c RthJA 85 °C/W
Junction-to-case (drain) RthJC 2
SQJQ904E
www.vishay.com Vishay Siliconix
S17-0256-Rev. A, 20-Feb-17 2Document Number: 68442
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0, ID = 250 μA 40 - - V
Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2.5 3 3.5
Gate-source leakage IGSS V
DS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero gate voltage drain current IDSS
VGS = 0 V VDS = 20 V - - 1
μA VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50
VGS = 0 V VDS = 40 V, TJ = 175 °C - - 150
On-state drain current a I
D(on) V
GS = 10 V VDS 5 V 40 - - A
Drain-source on-state resistance a R
DS(on)
VGS = 10 V ID = 20 A - 0.0029 0.0034
VGS = 10 V ID = 20 A, TJ = 125 °C - - 0.0074
VGS = 10 V ID = 20 A, TJ = 175 °C - - 0.0091
Forward transconductance b gfs VDS = 15 V, ID = 15 A - 80 - S
Dynamic b
Input capacitance Ciss
VGS = 0 V VDS = 20 V, f = 1 MHz
- 4530 5900
pF Output capacitance Coss - 2750 3300
Reverse transfer capacitance Crss - 168 220
Total gate charge c Qg
VGS = 10 V VDS = 20 V, ID = 40 A
-6075
nC Gate-source charge c Qgs -16-
Gate-drain charge c Qgd -5-
Gate resistance Rgf = 1 MHz 0.5 1 2
Turn-on delay time c td(on)
VDD = 20 V, RL = 0.5
ID 40 A, VGEN = 10 V, Rg = 1
-15.520
ns
Rise time c tr -4.66.2
Turn-off delay time c td(off) -3038
Fall time c tf -47
Source-Drain Diode Ratings and Characteristics b
Pulsed current a ISM --200A
Forward voltage VSD IF = 40 A, VGS = 0 - 1 1.5 V
SQJQ904E
www.vishay.com Vishay Siliconix
S17-0256-Rev. A, 20-Feb-17 3Document Number: 68442
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Transfer Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
10
100
1000
10000
0
30
60
90
120
150
0 6 12 18 24 30
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
2nd line
V
GS
= 10 V thru 5 V
V
GS
= 4 V
10
100
1000
10000
0
20
40
60
80
100
120
03691215
Axis Title
1st line
2nd line
2nd line
gfs - Transconductance (S)
ID- Drain Current (A)
2nd line
T
C
= 25 °C
TC=-55 °C
TC= 125 °C
10
100
1000
10000
0
2
4
6
8
10
0246810
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VGS - Gate-to-Source Voltage (V)
2nd line
TC= 25 °C
TC=-55 °C
TC= 125 °C
10
100
1000
10000
0
16
32
48
64
80
0246810
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VGS - Gate-to-Source Voltage (V)
2nd line
TC= 25 °C
TC=-55 °C
TC= 125 °C
10
100
1000
10000
0.000
0.002
0.004
0.006
0.008
0.010
0 20406080100120
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
ID- Drain Current (A)
2nd line
VGS = 4.5 V
VGS = 10 V
10
100
1000
10000
0
2
4
6
8
10
0 20406080100
Axis Title
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
2nd line
ID= 15 A
VDS = 20 V
SQJQ904E
www.vishay.com Vishay Siliconix
S17-0256-Rev. A, 20-Feb-17 4Document Number: 68442
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
10
100
1000
10000
0.5
0.8
1.1
1.4
1.7
2.0
-50-25 0 255075100125150175
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
TJ- Junction Temperature (°C)
2nd line
ID= 10 A
VGS = 10 V
VGS = 7 V
10
100
1000
10000
0.000
0.003
0.006
0.009
0.012
0.015
0246810
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
2nd line
TJ= 25 °C
TJ= 150 °C
10
100
1000
10000
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
IS- Source Current (A)
VSD - Source-to-Drain Voltage (V)
2nd line
TJ= 150 °C TJ= 25 °C
10
100
1000
10000
-1.5
-1.1
-0.7
-0.3
0.1
0.5
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
VGS(th) Variance (V)
TJ- Temperature (°C)
2nd line
ID= 5 mA
ID= 250 µA
10
100
1000
10000
35
39
43
47
51
55
-50-25 0 255075100125150175
Axis Title
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
TJ- Junction Temperature (°C)
2nd line
I
D
= 1 mA
SQJQ904E
www.vishay.com Vishay Siliconix
S17-0256-Rev. A, 20-Feb-17 5Document Number: 68442
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
Limited by R
DS(on)
*
1 ms
I
DM
Limited
T
C
= 25 °C
Single Pulse
BVDSS Limited
10 ms
1 s, 10 s, DC
I
D
Limited 100 ms
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty cycle = 0.5
0.2
0.1
0.05
0.02
Single pulse
P
DM
t
1
t
2
1. Duty cycle, D =
2. Per unit base = R
thJA
= 65 °C/W
3. T
JM
-T
A
= P
DM
Z
thJA (t)
4. Surface mounted
t
1
t
2
Notes:
SQJQ904E
www.vishay.com Vishay Siliconix
S17-0256-Rev. A, 20-Feb-17 6Document Number: 68442
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68442.
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty cycle = 0.5
0.2
0.1
0.05
0.02
Single pulse
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Revision: 08-Feb-17 1Document Number: 91000
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