SD823C..C SERIES
FAST RECOVERY DIODES Hockey Puk Version
810A
910A
1
Bulletin I2074 rev. D 04/00
www.irf.com
SD823C..C
S20 S30
Features
High power FAST recovery diode series
2.0 to 3.0 µs recovery time
High voltage ratings up to 2500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Press-puk encapsulation
Hockey Puk version case style B-43
Maximum junction temperature 150°C
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
IF(AV) 810 910 A
@ Ths 55 55 °C
IF(RMS) 1500 1690 A
IFSM @ 50Hz 9300 9600 A
@ 60Hz 9730 10050 A
VRRM range 1200 to 2500 1200 to 2500 V
trr 2.0 3.0 µs
@ TJ25 25 °C
TJ- 40 to 150 °C
Parameters Units
Major Ratings and Characteristics
case style B-43
SD823C..C Series
2
Bulletin I2074 rev. D 04/00
www.irf.com
Voltage VRRM , maximum repetitive VRSM , maximum non- IRRM max.
Type number Code peak reverse voltage repetitive peak rev. voltage @ TJ = TJ max.
VVmA
12 1200 1300
16 1600 1700
20 2000 2100
25 2500 2600
ELECTRICAL SPECIFICATIONS
Voltage Ratings
SD823C..C 50
IF(AV) Max. average forward current 810 (425) 910 (470) A 180° conduction, half sine wave
@ heatsink temperature 55 (85) 55 (85) °C Double side (single side) cooled
IF(RMS) Max. RMS forward current 1500 1690 A @ 25°C heatsink temperature double side cooled
IFSM Max. peak, one-cycle forward, 9300 9600 t = 10ms No voltage
non-repetitive surge current 9730 10050 t = 8.3ms reapplied
7820 8070 t = 10ms 100% VRRM
8190 8450 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 432 460 t = 10ms No voltage Initial TJ = TJ max.
395 420 t = 8.3ms reapplied
306 326 t = 10ms 100% VRRM
279 297 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 4320 4600 KA2√s t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level value of threshold
voltage
VF(TO)2 High level value of threshold
voltage
rf1Low level value of forward
slope resistance
rf2High level value of forward
slope resistance
VFM Max. forward voltage drop 2.20 1.85 V Ipk= 1500A, TJ = TJ max, tp = 10ms sinusoidal wave
0.76 0.57 (I > π x IF(AV)),TJ = TJ max.
0.80 0.60 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
1.11 1.06 (I > π x IF(AV)),TJ = TJ max.
1.00 0.95 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
KA2s
A
V
mΩ
Forward Conduction
Parameter Units Conditions
SD823C..C
S20 S30
Code
(µs) (A) (A/µs) (V) (µs) (µC) (A)
Test conditions Max. values @ TJ
= 150 °C
Recovery Characteristics
Typical trr Ipk di/dt Vrtrr Qrr Irr
@ 25% IRRM Square Pulse @ 25% IRRM
S20 2.0 1000 50 - 50 3.5 240 110
S30 3.0 1000 50 - 50 5.0 380 130
TJ
= 25 oC
SD823C..C Series
3
Bulletin I2074 rev. D 04/00
www.irf.com
SD823C..C
S20 S30
TJMax. junction operating temperature range -40 to 15 0
Tstg Max. storage temperature range -40 to 150
RthJ-hs Max. thermal resistance, case junction 0.076 DCoperation single side cooled
to heatsink 0.038 DCoperation double side cooled
F Mounting force, ± 10% 9800 N
(1000) (Kg)
wt Approximate weight 83 g
Case style B-43 See Outline Table
°C
Parameter Units Conditions
Thermal and Mechanical Specifications
K/W
Conduction angle Units Conditions
Single Side Double Side Single Side Double Side
Sinusoidal conduction Rectangular conduction
180°0.007 0.007 0.005 0.005 TJ = TJ max.
120°0.008 0.008 0.008 0.008
90°0.010 0.010 0.011 0.011 K/W
60°0.015 0.015 0.016 0.016
30°0.026 0.026 0.026 0.026
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Ordering Information Table
1- Diode
2- Essential part number
3-3 = Fast recovery
4- C = Ceramic Puk
5- Voltage code: Code x 100 = VRRM (See Voltage Ratings table)
6-t
rr code
7- C = Puk Case B-43
SD 82 3 C 25 S20 C
123 4 5 6 7
Device Code
SD823C..C Series
4
Bulletin I2074 rev. D 04/00
www.irf.com
Outline Table
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
0.8(0.03) MIN.
3.5 (0.14) DIA. NOM. x
1.8 (0.07) DEEP MIN. BOTH ENDS
14 .4 ( 0 .57 )
15 .4 ( 0 .61 )
BOTH ENDS
40.5 (1.59) DIA. MAX.
25.3 (1) DIA. MAX.
TWO PLACES
42 (1.65) DIA. MAX.
Conform to JEDEC B-43
All dimensions in millimeters (inches)
20
40
60
80
100
120
140
160
0 100 200 300 400 500 600 700
30°
60° 90° 120°
180°
Average Forward Current (A)
Maxim um Allowable Heatsink Temperature (°C)
Conduction Angle
SD 823C ..S20C Series
(Single Side Cooled)
R (D C) = 0.0 76 K/W
th J-hs
20
40
60
80
100
120
140
160
0 200 400 600 800 1000
30°60°90°
180°DC
120°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Period
SD823C..S20C Series
(Single Side Cooled)
R (DC) = 0.076 K/W
th J-hs
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
SD823C..C Series
5
Bulletin I2074 rev. D 04/00
www.irf.com
Fig. 3 - Current Ratings Characteristics
Fig. 5 - Current Ratings Characteristics Fig. 6 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 7 - Current Ratings Characteristics Fig. 8 - Current Ratings Characteristics
20
40
60
80
100
120
140
160
0 100 200 300 400 500 600 700
30°60°90°120°180°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD823C..S30C Series
(Single Side Cooled)
R (DC) = 0.076 K/W
thJ-h s
0
20
40
60
80
100
120
140
160
0 200 400 600 800 1000 1200
30°60°
90°
180°DC
120°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Period
SD823C..S30C Series
(Single Side Cooled)
R (DC) = 0.076 K/W
thJ-h s
0
20
40
60
80
100
120
140
160
0 200 400 600 800 1000 1200
30°
60°90°120°
180°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD 823C..S30C Series
(Double Side Cooled)
R (DC) = 0.0 38 K/W
thJ-h s
0
20
40
60
80
100
120
140
160
0 400 800 1200 1600 2000
30°60°
90°
180°
DC
120°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Period
SD823C..S30C Series
(Double Side Cooled)
R (DC) = 0.038 K/W
th J- hs
0
20
40
60
80
100
120
140
160
0 200 400 600 800 1000
30°60°90°120°
180°
Ave ra g e F orw a rd C urre nt (A )
M axim um Allow able Heatsink Tem perature (°C)
Conduction Angle
SD823C ..S20C Series
(Double Side C ooled)
R (DC) = 0.0 38 K/W
thJ-h s
0
20
40
60
80
100
120
140
160
0 250 500 750 1000 1250 1500
30°60°90°
180°DC
120°
Ave ra g e F orw a rd C urre nt (A )
Maximum Allowable Heatsink Temperature (°C)
Conduction Period
SD823C ..S20C Series
(Double Side Cooled)
R (DC ) = 0.038 K/W
thJ- hs
SD823C..C Series
6
Bulletin I2074 rev. D 04/00
www.irf.com
Fig. 9 - Forward Power Loss Characteristics Fig. 10 - Forward Power Loss Characteristics
Fig. 11 - Forward Power Loss Characteristics Fig. 12 - Forward Power Loss Characteristics
Fig. 13 - Maximum Non-repetitive Surge Current Fig. 14 - Maximum Non-repetitive Surge Current
0
500
1000
1500
2000
2500
3000
0 200 400 600 800 1000
180°
120°
90°
60°
30°
A ve ra ge F orw a rd C urre n t (A )
Maxim um Average Forward Power Loss (W )
RMS Limit
Conduction Angle
SD823C ..S20C Series
T = 150°C
J
0
500
1000
1500
2000
2500
3000
3500
0 200 400 600 800 10001200 1400 1600
DC
180°
120°
90°
60°
30°
Av erag e Fo rw a rd C urren t (A )
RMS Limit
Maximum Average Forward Power Loss (W)
Conduction Period
SD 823C ..S20C Series
T = 150°C
J
2000
3000
4000
5000
6000
7000
8000
9000
110100
Nu m ber O f Equ al Am plitud e H alf C ycle C urren t Pulses (N)
Peak Half Sine Wave Forward Current (A)
SD823C ..S20C Series
Initial T = 150 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
At Any Rated Load Condition And With
Rated V A p plied Follo w in g Surge.
RRM
J
2000
3000
4000
5000
6000
7000
8000
9000
10000
0.01 0.1 1
Pulse Train Duration (s)
Ma ximu m No n Rep etitive Surge C urrent
Peak Half Sine W ave Forward Current (A)
In itia l T = 1 50 °C
N o Voltag e Reap plied
Rated V Reapplied
Versu s P ulse Train D ura tio n.
SD823C ..S20C Series
RRM
J
0
500
1000
1500
2000
2500
3000
3500
0 400 800 1200 1600 2000
DC
180°
120°
90°
60°
30°
Av erag e Fo rw a rd C urre nt (A )
RM S Lim it
Maximum Average Forward Power Loss (W)
Conduction Period
SD 823C ..S30C Series
T = 150°C
J
0
500
1000
1500
2000
2500
3000
0 200 400 600 800 1000 1200
180°
120°
90°
60°
30°
A vera g e Fo rw a rd C urre nt (A )
M aximum Average Forw ard Power Loss (W)
RMS Limit
Conduction Angle
SD 823C ..S30C Series
T = 150°C
J
SD823C..C Series
7
Bulletin I2074 rev. D 04/00
www.irf.com
Fig. 16 - Maximum Non-repetitive Surge CurrentFig. 15 - Maximum Non-repetitive Surge Current
Fig. 17 - Forward Voltage Drop Characteristics Fig. 18 - Forward Voltage Drop Characteristics
Fig. 19 - Thermal Impedance ZthJ-hs Characteristic
0.001
0.01
0.1
0.001 0.01 0.1 1 10 100
Squa re W ave P ulse D uratio n (s)
thJ-hs
Transien t Thermal Impedance Z (K/W )
Steady State Value
R = 0.076 K/W
(Single Side C ooled)
R = 0.038 K/W
(D ouble Side C ooled)
(D C O p e ra t io n )
th J- hs
th J- hs
SD823C ..S20/S30C Series
100
1000
10000
0.511.522.533.544.55
T = 25°C
J
Instantaneous Forward Voltage (V)
Instantaneous Forw ard Current (A)
T = 150°C
J
SD 823C ..S20C Series
3000
4000
5000
6000
7000
8000
9000
1 10 100
Number O f Equal Amplitude H alf Cycle Current Pulses (N)
Peak Half Sine W ave Forward Current (A)
SD823C..S30C Se ries
Initial T = 1 50 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
At Any Rated Load Condition And With
R a te d V A p p lie d Fo ll o w in g S u r g e .
RRM
J
2000
3000
4000
5000
6000
7000
8000
9000
10000
0.01 0.1 1
Pulse Train Duration (s)
Peak Half Sine W ave Forward Current (A)
In it ia l T = 1 5 0 °C
No Voltage Reapplied
Rated V Reapplied
J
RRM
SD823C ..S30C Series
Ve rsus P ulse Train D ura tion.
Maxim um Non Repetitive Surge Current
100
1000
10000
0.511.522.533.54
T = 25°C
J
Instantaneous Forward Voltage (V)
In stantaneous Forward Current (A)
T = 150°C
J
SD823C..S30C Series
SD823C..C Series
8
Bulletin I2074 rev. D 04/00
www.irf.com
Fig. 25 - Recovery Time Characteristics Fig. 26 - Recovery Charge Characteristics Fig. 27 - Recovery Current Characteristics
Fig. 20 - Typical Forward Recovery Characteristics Fig. 21 - Typical Forward Recovery Characteristics
0
20
40
60
80
100
0 400 800 1 200 1600 2000
T = 25°C
J
Forward Recovery (V)
T = 150°C
J
Rate O f Rise Of Forw ard Current - di/dt (A/us)
SD 823C ..S30C Series
I
V
FP
0
50
100
150
200
250
300
350
400
450
500
550
0 50 100 150 200 2 50 300
M axim um R e ve rse Reco ve ry C urren t - Irr (A)
500 A
Rate Of Fall Of Forward Current - di/dt (A/µs)
150 A
I = 1000 A
Sine Pulse
FM
SD 823C..S30C Series
T = 150 °C; V > 100V
J
r
0
200
400
600
800
1000
1200
0 50 100 150 200 250 300
Maxim um Reverse Recovery Charge - Qrr (µC)
Rate Of Fall O f Forward Current - di/dt (A/µs)
500 A
I = 1000 A
Sin e Pulse
150 A
FM
SD 823C ..S30C Series
T = 150 °C ; V > 100V
J
r
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
10 100 1000
Rate Of Fall Of Forward Current - di/dt (A/µs)
Maximum Reverse Recovery Time - Trr (µs)
500 A
I = 10 00 A
Sin e Pu lse
FM
150 A
SD 823C..S30C Series
T = 150 °C ; V > 100V
J
r
0
50
100
150
200
250
300
350
400
450
0 50 100 150 200 250 300
M axim um R e verse Rec o very C urren t - Irr (A )
500 A
Rate Of Fall O f Forward Current - di/dt (A/µs)
I = 1000 A
Sine P u ls e
150 A
FM
SD 823C ..S20C Series
T = 150 °C ; V > 100V
r
J
0
100
200
300
400
500
600
700
800
0 50 100 150 200 250 300
M ax im um Reve rse Rec ove ry C ha rg e - Qrr (µ C )
R ate O f Fall Of Forwa rd Current - d i/dt (A/µs)
500 A
I = 1000 A
Sine Pulse
150 A
FM
SD 823C ..S20C Series
T = 150 °C ; V > 100V
J
r
Fig. 24 - Recovery Current Characteristics
Fig. 22 - Recovery Time Characteristics Fig. 23 - Recovery Charge Characteristics
2
2.5
3
3.5
4
4.5
5
5.5
6
10 100 1000
Rate Of Fall Of Forward Current - di/dt (A/µs)
M axim um Re verse Rec o ve ry Tim e - Trr (µs)
500 A
I = 1 000 A
Sine P ul se
150 A
FM
SD 823C ..S20C Series
T = 150 °C ; V > 100V
J
r
0
20
40
60
80
100
0 400 800 1200 1600 2000
T = 25°C
J
Forw ard Recovery (V)
T = 150°C
J
Rate Of Rise Of Forw ard Current - di/dt (A/us)
SD823C..S20C Se ries
I
V
FP
SD823C..C Series
9
Bulletin I2074 rev. D 04/00
www.irf.com
nt Characteristics
Fig. 30 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 32 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 33 - Frequency Characteristics
nt Characteristics
Fig. 28 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 29 - Frequency Characteristics
Fig. 31 - Frequency Characteristics
1E2
1E3
1E4
1E11E21E31E4
1
2
Pulse Basewid th (µs)
Peak Forward Current (A)
10 joules per pulse
6
4
dv/dt = 100 0V/µs
Si nu soid al Pu lse
0.6
0.4
0.2
0.1
T = 150°C, V = 800V
J
RRM
SD823C..S20C Series
tp
0.08
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse Basewidth (µs)
50 Hz
200
10000
100
4000
dv/dt = 1000V/us
20000
400
15000
1000
2000
6000
Peak Forward Current (A)
T = 55°C, V = 800V
C
RRM
SD823C..S20C Series
Sinusoidal Pulse
tp
3000
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
Pulse Basew idth (µs)
4
10 joules p er pulse
6
Trap ez oidal P uls e
Peak Forward Current (A)
T = 150°C, V = 800V
dv/dt = 1000V/µs
di/dt = 300A/µs
0.6
0.4
J
RR M
SD823C..S20C Series
tp
0.8
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse Basew idth (µs)
50 H z
100
200
400
1000
2000
4000
3000
600
6000
10000
1500 0
Peak Forward Current (A)
20000
SD823C..S20C Series
T = 55°C, V = 800V
dv/dt = 1000V/us,
di/dt = 300A/us
Trapezoidal Pulse
CRRM
tp
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
Pulse Basewidth (µs)
4
10 joules per pulse
6
Tra p e zoida l Pul se
Peak Forward Current (A)
0.6
0.4
T = 150°C, V = 800V
dv/dt = 1000V/µs
di/dt = 100A/µs
J
RRM
SD823C..S20C Series
tp
0.2
1E2
1E3
1E4
1E11E21E31E4
Pulse Basewidth (µs)
Trapezoidal Pulse
50 Hz100200400
1000
2000
4000
3000
600
6000
10000
15000
Peak Forward Current (A)
20000
dv/dt = 1000V/us,
di/dt = 100A/us
T = 55 °C , V = 80 0V
C
RR M
SD823C..S20C Series
tp
SD823C..C Series
10
Bulletin I2074 rev. D 04/00
www.irf.com
Fig. 34 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 35 - Frequency Characteristics
Fig. 38 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 39 - Frequency Characteristics
1E2
1E3
1E4
1E1 1E2 1E3 1E4
12
Pulse Basewidth (µs)
Peak Forward Current (A)
10 jo u le s p e r p u lse
6
4
dv/dt = 1000V/µs
Sinusoid al Pu lse
T = 15 0°C, V = 8 00V
J
RRM
0.6
0.4
0.2
0.1
SD823C..S30C Series
tp
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse Basewidth (µs)
50 H z
200
10000
100
4000
dv/dt = 100 0V/us
20000
400
15000
1000
2000
6000
Peak Forward Current (A)
T = 55°C, V = 800V
CRRM
SD823C..S30C Series
Sinusoidal P ulse
tp
3000
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse Basewidth (µs)
Tra p e zoid al Pu lse
50 H z
100
200
400
1000
1500
2000
4000
3000
600
6000
10000
15000
Peak Forward Current (A)
T = 55°C, V = 8 00V
dv/dt = 1000V/us,
di/dt = 30 0A/us
C
RR M
SD823C..S30C Series
tp
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
Pulse Basew idth (µs)
4
10 joules per pulse
6
Peak Forw ard Current (A)
dv/dt = 1000V/µs
di/dt = 300A/µs
T = 150°C, V = 800V
0.6
0.4
J
RR M
SD823C..S30C Series
Trapezoidal Pulse
tp
0.8
1E2
1E3
1E4
1E11E21E31E4
1
2
Pulse Basew idth (µs)
4
10 joules p er pulse
6
Trapezoidal Pulse
Peak Forward Current (A )
0.6
0.4
T = 150°C, V = 800V
dv/dt = 1000V/µs
d i/ dt = 10 0A /µ s
J
RRM
SD823C..S30 C Series
tp
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse Basewidth (µs)
50 H z
200
10000
100
4000
dv/dt = 100 0V/us
20000
400
15000
1000
2000
6000
Peak Forward Current (A)
T = 55°C, V = 800V
CRRM
SD823C..S30C Series
Sinusoidal P ulse
tp
3000
Fig. 36 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 37 - Frequency Characteristics
