SOW E22)MOS [FET [!RF742,743 FIELD EFFECT POWER TRANSISTOR 400, 360 VOLTS RDS(ON) = 9.80 0 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology N-CHANNEL to achieve low on-resistance with excellent device rugged- s ness and reliability. \ This design has been optimized to give superior performance G in most switching applications including: switching power s supplies, inverters, converters and solenoid/relay drivers. on CASE STYLE TO-220AB Also, the extended safe operating area with good linear 4041076) 18298 sao transfer characteristics makes it well suited for many linear jr soot fPe rea gee applications such as audio amplifiers and servo motors. C ! wctn | Features / 7 f ste _H TEMPERATURE ili ili tabili | t a INT e Polysilicon gate Improved stability and reliability sasiaee/, + 3819.00) Ie -141(3.58) . .220(5,59) e No secondary breakdown Excellent ruggedness | \ _ + .430(3.3) je :906(0.15) e Ultra-fast switching Independent of temperature A I fonens TERM.1 * Voltage controlled High transconductance semua | wie e Low input capacitance Reduced drive requirement Tenms~| _ 1033(0.84) . 67) Ot~*~~C .107(2.72) Excellent thermal stability Ease of paralleling 02710.68) ea ma ene Se UNIT TYPE |TERM.1TERM.2) TERM. TAB POWER MOS FET |T0-220-AB] GATE }ORAIN| SOURCE} DRAIN maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF742 IRF743 UNITS Drain-Source Voltage Vpss 400 350 Volts Drain-Gate Voltage, Reg = 1MQ VDGR 400 350 Volts Continuous Drain Current @ To = 25C Ip 8 8 A @ Tc = 100C 5 5 A Pulsed Drain Current" IDM 32 32 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 125 125 Watts Derate Above 25C 1.0 1.0 Ww/C Operating and Storage Junction Temperature Range TJ, TSTG -55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rac 1.00 1.00 C/W Thermal Resistance, Junction to Ambient Reva 80 80 C/W Maximum Lead Temperature for Soldering Purposes: %" from Case for 5 Seconds Th 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 219 electrical characteristics (Tc = 25C) (unless otherwise specified) |. CHARACTERISTIC | SYMBOL | MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRF742 | BVoss 400 Volts (Vas = OV, Ip = 250 pA) IRF743 350 Zero Gate Voltage Drain Current Ipss . (Vps = Max Rating, Vgg = OV, Tc = 25C) _ 250 pA (Vpg = Max Rating, 0.8, Vgg = OV, Tc = 125C) = 1000 Gate-Source Leakage Current on characteristics* Gate Threshold Voltage To = 25C | Vasctn) 2.0 _ 4.0 Volts (Vos = Vas; Ip = 250 vA) On-State Drain Current | 8 _ _ A (Vgs = 10V, Vpg = 10V) D(ON) Static Drain-Source On-State Resistance (Vag = 10V, Ip = 5A) Rps(ON) _ 0.70 0.80 Ohms Forward Transconductance (Vps = 10V, Ip = 5A) Ofs 3.2 4.5 _ mhos dynamic characteristics input Capacitance Vas = OV Ciss _ 1400 1600 pF Output Capacitance Vps = 25V Coss _ 210 450 pF Reverse Transfer Capacitance f= 1 MHz Crss _ 37 150 pF switching characteristics Turn-on Delay Time Vps = 175V ta(on) _ 20 _ ns Rise Time Ip = 5A, Veg = 15V tr 20 ns Turn-off Delay Time RGEN = 500, Res = 12.50. ta (off) _ 70 ns Fall Time (Ras (EQuiv.) = 100) tt _ 30 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ 8 A Pulsed Source Current Ism _ _ 32 A Diode Forward Voltage _ (To = 25C, Vag = OV, Ig = 8A) Vso 0.8 1.9 Volts Reverse Recovery Time ter _ 420 _ ns (is = 10A, dig/dt = 100A/usec, To = 125C) Qrar _ 5.5 uC *Pulse Test: Pulse width < 300 us, duty cycle <= 2% 100 80 60 40 20 a ano n OPERATION IN THIS AREA MAY BE LIMITED BY Rygiony Ip. DRAIN CURRENT (AMPERES) 2 eer + ano SINGLE PULSE To= 25C IRF 743 (RF742 N 0.1 2 4 6 810 20 40 60 80100 Vps- DRAIN~SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 200 400 600 1000 220 Rostons AND Vggcrq) NORMALIZED 2.4 CONDITIONS: Fog(an) CONDITIONS: Ip = 5.0.A, Vag = 10V V@g(TH) CONDITIONS: Ip = 250uA, Vg = Vag 2.2 Rosion) 2.0 1.8 1.6 14 12 1.0 0.8 VesitH) 0.6 0.4 0.2 0 ~40 0 40 80 Ty, JUNCTION TEMPERATURE (C) 120 160 TYPICAL NORMALIZED Rosin; AND Vositu) VS. TEMP.