HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200605
Issued Date : 2006.02.01
Revised Date : 2006.02.07
Page No. : 1/5
H2N7002SN HSMC Product Specification
H2N7002SN
N-Channel MOSFET (60V, 0.2A)
Description
N-channel enhancement-mode MOS transistor.
Absolute Maximum Ratings
Drain-Source Voltage ............................................................................................................................................ 60 V
Drain-Gate Voltage (RGS=1MΩ) ............................................................................................................................. 60 V
Gate-Source Voltage ........................................................................................................................................... ±20 V
Continuous Drain Current (TA=25°C)(1) ............................................................................................................. 200 mA
Continuous Drain Current (TA=100°C)(1) ........................................................................................................... 115 mA
Pulsed Drain Current (TA=25°C)(2) .................................................................................................................... 800 mA
Total Power Dissipation (TC=25°C).................................................................................................................. 200 mW
Derate above 25°C .................................................................................................................................. 0.16 mW / °C
Storage Temperature................................................................................................................................ -55 to 150 °C
Operating Junction Temperature .............................................................................................................. -55 to 150 °C
Lead Temperature, for 10 second Soldering ...................................................................................................... 260 °C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient................................................................................................... 625 °C / W
Electrical Characteristics (TA=25°C)
Parameter Symbol Test Conditions Min Typ. Max Unit
Drain-Source Breakdown Voltage BVDSS VGS=0, ID=10uA 60 - - V
Gate Threshold Voltage VGS(th) VDS=2.5V, ID=0.25mA 1 - 2.5 V
Gate Source Leakage Current, Forward IGSS/F VGS=+20V, VDS=0 - - 100 nA
Gate Source leakage Current, Reverse IGSS/R VGS=-20V, VDS=0 - - -100 nA
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0 - - 1 uA
On-State Drain Current ID(ON) VDS>2VDS(ON), VGS=10V 500 - - mA
ID=50mA, VGS=5V - - 0.375 V
Static Drain-Source On-State Voltage VDS(ON) ID=500mA, VGS=10V - - 3.75 V
VGS=4.5V, ID=75mA - 3.3 5.3 Ω
VGS=5V, ID=50mA - 2.8 5 Ω
Static Drain-Source On-State Resistance RDS(ON)
VGS=10V, ID=500mA - 2.3 5 Ω
Forward Transconductance GFS VDS>2VDS(ON), ID=200mA 80 - - mS
Turn-on Delay Time td(on) -20-nS
Turn-off Delay Time td(off)
(VDD=50V, RD=250Ω,
VGS=10V, RG=50Ω)-40-nS
Input Capacitance Ciss - - 50 pF
Output Capacitance Coss - - 25 pF
Reverse Transfer Capacitance Crss
VDS=25V, VGS=0, f=1MHz
--5pF
(1)The Power Dissipation of the package may result in a continuous drain current.
(2)Pulse Width≤300us, Duty cycle≥2%.
H2N7002SN Pin Assignment & Symbol
3-Lead Plastic SOT-323
Package Code: SN
Pin 1: Gate 2: Source 3: Drain
12
3
G
D
S
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200605
Issued Date : 2006.02.01
Revised Date : 2006.02.07
Page No. : 2/5
H2N7002SN HSMC Product Specification
Characteristics Curve
Output Characteristics
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0246810
VDS(V)
ID(A)
VGS=10V
9V 8V
7V 6V
5V
4V
3V
Transfer Characteristics
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
024681012
VGS(V)
ID(A)
TJ= -55ºC Tj=25ºC
Tj=150ºC
VDS=10V
Typical Transconductance
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0 0.2 0.4 0.6 0.8 1
ID(A)
gFS(S)
Tj=-55ºC
Tj=25ºC
Tj=150ºC
VDS=7V
Capacitance
0
10
20
30
40
50
60
70
0 1020304050
VDS(V)
C(pF)
Ciss
Coss
Crss
On-Resistance Variation With Temperature
0
0.5
1
1.5
2
2.5
-50 0 50 100 150
Tj Junction Temperature
RDS(on) (m
Ω
)
VGS=10V
ID=0. 5A
Breakdown Voltage Variation With Temperature
0.6
0.7
0.8
0.9
1
1.1
1.2
-50 0 50 100 150
Tj Junction Temperature
BVDSS(V)
VGS=0
ID=0.25mA
Source-Drain Diode Forward Voltage
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD(V)
Is(m A)
Tj=150ºC Tj=25ºC
Tj= -55ºC
On-resistance & Drain Current
0
0.5
1
1.5
2
2.5
3
0 0.1 0.2 0.3 0.4 0.5 0.6
I
D
(A)
R
DS(on)
(Ω)
V
GS
=10V
V
GS
=4.5V
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200605
Issued Date : 2006.02.01
Revised Date : 2006.02.07
Page No. : 3/5
H2N7002SN HSMC Product Specification
Safe Operating Area
0.001
0.01
0.1
1
10
110100
Vds ( V)
Id (A)
DC
100m
s
10ms
1ms
100us
Power Derating
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0 25 50 75 100 125 150 175
T,EMPERATURE
PD ,Power Dissipation (W)
Thermal Response
0.01
0.1
1
0.1 1 10 100 1000
t ,Time(ms)
r(t) ,Transient Thermal Resistance
(normalized)
single pluse
0.5
0.2
0.1
0.05
0.02
0.01
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200605
Issued Date : 2006.02.01
Revised Date : 2006.02.07
Page No. : 4/5
H2N7002SN HSMC Product Specification
SOT-323(SC-70) Dimension
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-2521-2056 Fax: 886-2-2563-2712
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-598-3621~5 Fax: 886-3-598-2931
He
E
A
A1 Q
Lp
e1
e
bp
12
3
D
W B
v A
Z
detail Z
A
C
θ
01 2
scale
mm
DIM Min. Max.
A0.801.10
A1 0.00 0.10
bp 0.30 0.40
C0.100.25
D1.802.20
E1.151.35
e1.3 -
e1 0.65 -
He 2.00 2.25
Lp 0.15 0.45
Q0.130.23
v0.2-
w0.2 -
θ10°0°
*: Typical, Unit: mm
3-Lead SOT-323 Plastic
Surface Mounted Package
HSMC Package Code: SN
Marking:
70
Pb Free Mark
Pb-Free: " "
(Note)
Normal: None
2
Note: Pb-free product can distinguish by the green
label or the extra description on the right
side of the label.
Pin Style: 1.Gate 2.Source 3.Drain
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200605
Issued Date : 2006.02.01
Revised Date : 2006.02.07
Page No. : 5/5
H2N7002SN HSMC Product Specification
Solderi ng Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate (TL to TP)<3
oC/sec <3oC/sec
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
100oC
150oC
60~120 sec
150oC
200oC
60~180 sec
Tsm ax to T L
- Ramp-up Rate <3oC/sec <3oC/sec
Time maintained above:
- Temperature (TL)
- Time (tL)
183oC
60~150 sec
217oC
60~150 sec
Peak Temperature (TP) 240oC +0/-5oC 260oC +0/-5oC
Time within 5oC of actual Peak
Temperature (tP)10~30 sec 20~40 sec
Ramp-down Rate <6oC/sec <6oC/sec
Time 25oC to Peak Temperature <6 minutes <8 minutes
3. Flow (wave) soldering (solder dipping)
Products Peak temperature Dipping time
Pb devices. 245oC ±5oC 10sec ±1sec
Pb-Free devices. 260oC ±5oC 10sec ±1sec
Figure 1: Temperature profile
t
P
t
L
Ramp-down
Ramp-up
Ts
max
Ts
min
Critical Zone
T
L
to T
P
t
S
Preheat
T
L
T
P
25
t 25
o
C to Peak
Time
Temperature
