VS-10BQ040PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1.0 A FEATURES * Small foot print, surface mountable * Low forward voltage drop Cathode * High frequency operation Anode * Guard ring for enhanced ruggedness and long term reliability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C SMB * Designed and qualified for industrial level PRODUCT SUMMARY * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Package SMB IF(AV) 1.0 A VR 40 V VF at IF 0.49 V IRM max. 4 mA at 125 C TJ max. 150 C Diode variation Single die EAS 3 mJ DESCRIPTION The VS-10BQ040PbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES UNITS 1.0 A 40 V Rectangular waveform VRRM IFSM tp = 5 s sine 430 A VF 1.0 Apk, TJ = 125 C 0.49 V TJ Range -55 to +150 C VS-10BQ040PbF UNITS 40 V VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy EAS TJ = 25 C, IAS = 1 A, L = 6 mH 3.0 mJ IAR Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A Repetitive avalanche current 50 % duty cycle at TL = 112 C, rectangular waveform 1.0 5 s sine or 3 s rect. pulse 430 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied A 45 Revision: 28-Aug-14 Document Number: 94112 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10BQ040PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 1A Maximum forward voltage drop See fig. 1 VFM (1) TJ = 25 C 2A 1A TJ = 125 C 2A Maximum reverse leakage current See fig. 2 Typical junction capacitance Typical series inductance Maximum voltage rate of charge IRM (1) CT LS dV/dt TJ = 25 C VR = Rated VR TJ = 125 C VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 C Measured lead to lead 5 mm from package body Rated VR VALUES UNITS 0.53 0.70 V 0.49 0.64 0.1 mA 4 80 pF 2.0 nH 10 000 V/s VALUES UNITS -55 to +150 C Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ (1), TStg Maximum thermal resistance, junction to lead RthJL (2) Maximum thermal resistance, junction to ambient RthJA TEST CONDITIONS DC operation C/W 80 Approximate weight Marking device 36 Case style SMB (similar DO-214AA) 0.10 g 0.003 oz. 1F Notes (1) (2) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Mounted 1" square PCB Revision: 28-Aug-14 Document Number: 94112 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10BQ040PbF www.vishay.com Vishay Semiconductors 10 TJ = 150 C IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) 10 TJ = 150 C TJ = 125 C TJ = 25 C 1 0.1 0.2 1 TJ = 125 C TJ = 100 C 0.1 TJ = 75 C 0.01 TJ = 50 C 0.001 TJ = 25 C 0.0001 0.4 0.6 0.8 1.0 0 5 10 15 20 25 30 35 40 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 100 TJ = 25 C 10 0 10 20 30 40 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 100 10 PDM D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 1 Single pulse (thermal resistance) 0.1 0.00001 0.0001 0.001 0.01 0.1 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 1 10 . 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 28-Aug-14 Document Number: 94112 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10BQ040PbF www.vishay.com Vishay Semiconductors 0.8 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 140 130 Average Power Loss (W) Allowable Lead Temperature (C) 160 150 120 110 100 Square wave (D = 0.50) Rated VR applied 90 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 0.6 RMS limit 0.4 DC 0.2 80 See note (1) 70 0 0 0.4 0.8 1.6 1.2 0 0.3 0.6 0.9 1.2 1.5 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Average Forward Current vs. Allowable Lead Temperature Fig. 6 - Maximum Average Forward Dissipation vs. Average Forward Current IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 100 At any rated load condition and with rated VRRM applied following surge 10 10 100 1000 10 000 tp - Square Wave Pulse Duration (s) Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 28-Aug-14 Document Number: 94112 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10BQ040PbF www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 10 B Q 040 TR PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating 3 - B = single lead diode 4 - Q = Schottky "Q" series 5 - Voltage rating (040 = 40 V) 6 - TR = tape and reel 7 - PbF = lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-10BQ040TRPbF PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 5BT 3200 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95401 Part marking information www.vishay.com/doc?95403 Packaging information www.vishay.com/doc?95404 SPICE model www.vishay.com/doc?95406 Revision: 28-Aug-14 Document Number: 94112 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay High Power Products SMB DIMENSIONS in millimeters (inches) 2.15 (0.085) 1.80 (0.071) 3.80 (0.150) 3.30 (0.130) 1 2 1 Polarity 4.70 (0.185) 4.10 (0.161) 2.5 TYP. (0.098 TYP.) 2 Part Number Soldering pad 2.40 (0.094) 1.90 (0.075) 1.30 (0.051) 0.76 (0.030) 5.60 (0.220) 5.00 (0.197) 0.30 (0.012) 0.15 (0.006) 2.0 TYP. (0.079 TYP.) 4.2 (0.165) 4.0 (0.157) Document Number: 95017 Revision: 25-Jun-07 For technical questions concerning discrete products, contact: diodes-tech@vishay.com For technical questions concerning module products, contact: ind-modules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000