FCD7N60TM - Fairchild - Datasheet.Directory

FCD7N60/FCU7N60 Rev. A1

FCD7N60/FCU7N60 600V N-Channel MOSFET

FCD7N60 / FCU7N60

600V N-Channel MOSFET

Features

•650V @T

J = 150°C

• Typ. Rds(on)=0.53Ω

• Ultra low gate charge (typ. Qg=23nC)

• Low effective output capacitance (typ. Coss.eff=60pF)

• 100% avalanche tested

Description

SuperFETTM is, Fairchild’s proprietary, new generation of high

voltage MOSFET family that is utilizing an advanced charge

balance mechanism for outstanding low on-resistance and

lower gate charge performance.

This advanced technology has been tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate and higher avalanche energy.

Consequently, SuperFET is very suitable for various AC/DC

power conversion in switching mode operation for system

miniaturization and higher efficiency.

D-PAK

FCD Series

GSDI-PAK

FCU Series

Absolute Maximum Ratings

Symbol Parameter FCD7N60/FCU7N60 Unit

VDSS Drain-Source Voltage 600 V

IDDrain Current - Continuous (TC = 25°C)

- Continuous (TC = 100°C) 7

4.4 A

IDM Drain Current - Pulsed (Note 1) 21 A

VGSS Gate-Source voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 230 mJ

IAR Avalanche Current (Note 1) 7 A

EAR Repetitive Avalanche Energy (Note 1) 8.3 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns

PDPower Dissipation (TC = 25°C)

- Derate above 25°C83

0.67 W

W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds 300 °C

Thermal Characteristics

Symbol Parameter FCD7N60/FCU7N60 Unit

RθJC Thermal Resistance, Junction-to-Case 1.5 °C/W

RθJA Thermal Resistance, Junction-to-Ambient 83 °C/W

December 2008

SuperFET

•RoHS Compliant

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FCD7N60/FCU7N60 600V N-Channel MOSFET

FCD7N60/FCU7N60 Rev. A1

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FCD7N60 FCD7N60TM D-PAK 380mm 16mm 2500

FCD7N60 FCD7N60TF D-PAK 380mm 16mm 2000

FCU7N60 FCU7N60 I-PAK - - 70

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C600 -- -- V

VGS = 0V, ID = 250µA, TJ = 150°C-- 650 -- V

∆BVDSS

/ ∆TJ

Breakdown Voltage Temperature

Coefficient ID = 250µA, Referenced to 25°C-- 0.6 -- V/°C

BVDS Drain-Source Avalanche Breakdown

Voltage VGS = 0V, ID = 7A -- 700 -- V

IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V

VDS = 480V, TC = 125°C--

-- --

-- 1

10 µA

µA

IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

On Characteristics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA3.0 -- 5.0 V

RDS(on) Static Drain-Source

On-Resistance VGS = 10V, ID = 3 . 5A -- 0.53 0.6 Ω

gFS Forward Transconductance VDS = 40V, ID = 3.5A (Note 4) -- 6-- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25V, VGS = 0V,

f = 1.0MHz -- 710 920 pF

Coss Output Capacitance -- 380 500 pF

Crss Reverse Transfer Capacitance -- 34 -- pF

Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 22 29 pF

Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 60 -- pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 300V, ID = 7A

RG = 25Ω

(Note 4, 5)

-- 35 80 ns

trTurn-On Rise Time -- 55 120 ns

td(off) Turn-Off Delay Time -- 75 160 ns

tfTurn-Off Fall Time -- 32 75 ns

QgTotal Gate Charge VDS = 480V, ID = 7A

VGS = 10V

(Note 4, 5)

-- 23 30 nC

Qgs Gate-Source Charge -- 4.2 5.5 nC

Qgd Gate-Drain Charge -- 11.5 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 7 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 21 A

VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 7A -- -- 1.4 V

trr Reverse Recovery Time VGS = 0V, IS = 7A

dIF/dt =100A/µs (Note 4) -- 360 -- ns

Qrr Reverse Recovery Charge -- 4.5 -- µC

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. IAS = 3.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 7A, di/dt ≤ 1200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature

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FCD7N60/FCU7N60 600V N-Channel MOSFET

FCD7N60/FCU7N60 Rev. A1

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characterist ics

10-1 100101

10-1

100

101

VGS

Top : 15.0 V

10.0 V

8 .0 V

7 .0 V

6 .5 V

6 .0 V

Bottom : 5.5 V

* Notes :

1. 250µs Pulse Test

2. TC = 25oC

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

246810

10-1

100

101

* Note

1. VDS = 40V

2. 250µs Pulse Test

-55oC

150oC

25oC

ID , Drain Current [A ]

VGS , Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

0 5 10 15 20

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

VGS = 20V

VGS = 10V

* Note : TJ = 25oC

RDS(ON) [Ω],

Drain-Source On-Resistance

ID, Drain Current [A] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

10-1

100

101

25oC

150oC

* Notes :

1. V GS = 0V

2. 250µs Pulse Test

IDR , Reverse Drain Current [A]

VSD , Source-Drain Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10-1 100101

1000

2000

3000 Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

* Notes :

1. VGS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Capacitance [pF]

VDS, Drain-S ource Voltage [V] 0 5 10 15 20 25

VDS = 250V

VDS = 100V

VDS = 400V

* Note : ID = 7A

VGS, Gate-Source Voltage [V]

QG, Tota l Ga te Charg e [oC]

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FCD7N60/FCU7N60 600V N-Channel MOSFET

FCD7N60/FCU7N60 Rev. A1

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

* Note s :

1. VGS = 0V

2. ID = 250µA

BVDSS, (Normalized)

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC] -100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

* Notes :

1. VGS = 10 V

2. ID = 3.5 A

RDS(ON), (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

100101102103

10-2

10-1

100

101

102Operation in This Area

is Limited by R DS(on)

DC 10 ms

1 ms

100 µs

* Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. S in g le Pulse

ID, Drain Current [A]

VDS, Drain-Source Vo ltage [V]

25 50 75 100 125 150

0.0

2.5

5.0

7.5

10.0

ID, Drain Curr ent [A]

TC, Case Temperature [oC]

Figure 11. Transient Thermal Response Curve

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

* N ote s :

1 . Z θJC(t) = 1 .5 oC/W Max.

2 . Duty Fac to r, D= t1/t2

3 . T JM - T C = PDM * ZθJC(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZθJC(t), Thermal Response

t1, S quare Wave Pulse D uration [se c]

PDM

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FCD7N60/FCU7N60 600V N-Channel MOSFET

FCD7N60/FCU7N60 Rev. A1

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & W aveforms

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FCD7N60/FCU7N60 600V N-Channel MOSFET

FCD7N60/FCU7N60 Rev. A1

Peak Diode Recovery dv/dt Test Circuit & Waveforms

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FCD7N60/FCU7N60 600V N-Channel MOSFET

FCD7N60/FCU7N60 Rev. A1

Mechanical Dimensions

D-PAK

Dimensions in Millimeters

Package Dimensions (Continued)

I-PAK

Dimensions in Millimeters

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FCD7N60/FCU7N60 600V N-Channel MOSFET

FCD7N60/FCU7N60 Rev. A1

Rev. I37

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Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications

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FCD7N60/FCU7N60 600V N-Channel MOSFET

FCD7N60/FCU7N60 Rev. A1