Standard Power MOSFETs 2N6755, 2N6756 File Number 1586 Power MOS Field-Effect Transistors N-Channel Enhancernent-Mode = CHANNEL ENHANCEMENT MODE Power Field-Effect Transistors 0 12A and 14A, 60V - 100V 'ps(On) = 0.18. Q and 0.259 Features: @ SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics 3 @ High input impedance 9208-33741 m@ Majority carrier device TERMINAL DIAGRAM The 2N6755 and 2N6756 are n-channel enhancement- mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching TERMINAL DESIGNATION converters, motor drivers, relay drivers, and drivers for DRAIN high-power bipolar switching transistors requiring high SOURCE (FLANGE ) speed and low gate-drive power. These types can be oper- ated directly from integrated circuits. These types are supplied in the JEDEC TO-204AA steel O package. GATE 92Cs- 3780! JEDEC TO-204AA Absolute Maximum Ratings Paramuter 2N6755 v Drain Source Voltage 60 Drain - Gate Voltage 60 ws Drain Current 12 Continuous Drain 8.0" Pulsed 5 Gate Source Voltage 420 Dissipation 75 (See Fig. 11) 30 (See Fig. 11) {See WwW and -85* to 180 Storage Ternperature Range 3-472 Standard Power MOSFETs 2N6755, 2N6756 Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) Parameter Type Min. Typ. Max. Units Test Conditions BVpss rain Source Breakdown Voltege | 2N6755 | 60 = ~ Vv | Vgs-0 2N6756 | 100 - - Vo] ip + 1.0 mA Vsith) Gate Threshold Voltage ALL 2.0" ~ 4.0" Vv | Vos ~*~ Ves. Ip 2 mA lgsse Gate ~ Body Leakage Forward ALL ~ 100 aa | Vgs = 20V IGssn Gate Body Leakage Reverse ALL ~ = 100 nA | Vgg = -20V : logs Zero Gate Voltage Drain Current ALL - 0.1 1.0 mA | Vog = Max. Rating, Vgg = 0 - 0.2 4.0 mA | Vgg = Max. Rating, Vgg = 0, Te = 125C Vpston) vate Os On-State 2N6755 - - 3.0 v Vgg 7 10V, tp = 112A 2N6756 = = 252 Vv | Veg = 19. Ip = 144 Rpston} Static Drain-Source Or-State 2N6755 - 0.20 | 0.25 2 | Vgg = 10V, Ip = BA Fasintance (7) = . z ; 2N6756 014 | 0.18 2 [Vg = 10V, Ip = 9A Rosion) Static Drain-Source On-State 2N6755 - - 0.45 2 Vgg = 10V, Ip BA, To = 125C Resistance (1) 2N6756 = = 0.33 a Vas 10V, Ip = 9A, Te = 125C 5 Forward Tcansconductance (7) ALL 4.0" 5.5 | 12.0 | S(t) | Vg = 15V, Ip = 9a Cigs Input Capacitance ALL 350 600 800 pF Vgg 0. Vag = 25V. 4 = 1.0 M2 Coss Output Capacitance ALL ae Be a er Cres Reverse Transfer Capacitance ALL so | 100 | 150 oF ta ton) Turn-On Delay Time ALL - = 30 es | Vo 2 36Y, Ip = 9A, Zy = 150 tt Rise Tima ALL - - 75 ns {See Figs. 13 and 14) Tg toft) Turn-Oft Delay Time ALL ~ = 40 ns | (MOSFET switching times are essentially % Fall Time ALL = = 45 ns | independent of operating temperature.) Thermal Resistance Amuc Junction-to-Case ALL _ - 167" | C/W Rincs Case-to-Sink ALL - O14 - C/W | Mounting surface flat, smooth, and greased. Rinsa Junction-ta-Ambient ALL - - 30 | C/W [ Free Air Operation Body-Drain Diode Ratings and Characteristics 1s Continuous Source Current 2NG755 = = 12 A | Modified MOSFET symbol o (Body Diode! anerss {| = [ ~ | 14 coverse PN junction rectifier gna Pulsed Source Current 2N6755 = 25 A G {Body Diode) 2N6756 = = 30 s Vsp Diode Forward Voltage (4) 2ne755 | oss" | ~ 178 V__| Te = 286, Ig = 128, Vag = 9 2n6756 [ 090 | - 18 Vo | Te: 25C, Ie - 144, Vag 0 tee Reverse Recovery Time ALL - 300 ms | Ty = 150C, Ip = tggy, dig sdt = 100 Alus QpR Reverse Recovered Charge ALL = 40 ~ uC | Ty = 190C, Ip = iggy, dip /dt = 100 Alus *JEDEC registered values. oO Pulse Test: Pulse Width < 300 usec, Duty Cycle & 2% VARY ty TO OBTAIN REQUIRED PEAK t, y r os , mz 1) =0.58Vos5 our 1 ve + 0.758y; Vgg + 20V boty == c Dss _ L_ \ ' _ Fig. 1 Clamped Inductive Test Circuit Fig. 2 Clamped inductive Waveforms tp. ORAIN CURRENT (AMPERES) Ip, ORAIN CURRENT (AMPERES) 0 10 20 30 a 50 0 2 6 6 to Vpg. ORAIN-TD SOURCE VOLTAGE (VOLTS! Vgs. GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Output Characteristics Fig. 4 Typical Transfer Characteristics 3-473 Standard Power MOSFETs 2N6755, 2N6756 10 80 ys PULSE TEST 8 a 3 a $ = 2 = = = <6 . = z= & = = = = S S a 3 z 4 3 =< = = 5 5 8 . s 2 0 oa as 12 16 20 9 o4 os 4a 16 20 Vps, DAAIN-TO-SOURCE VOLTAGE (VOLTS) Vos. DRAIN.TO- SOURCE VOLTAGE (VOLTS) . - . a . os . , Fig. 6 Typical Saturation Characteristics Fig. 5 Typical Saturation Characteristics {2N6756) {2N6755) 50 10 20 a 8 a = = z 2 10 2 = g 6 2 5 g% 3 Ss 3 3 2 g z 2 = = So 20 = a = = z Vps* 15V 2 80 ys PULSE TEST 10 as 0 5 10 15 20 2 4.0 5.0 10 2 50 100 200 Ip, DRAIN CURRENT (AMPERES) Vps. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 7 Typical Transconductance Vs. Drain Current Fig. 8 Maximum Safe Operating Area ae - ef fe ote ff 3 + + 4+. 2 Z / & 14h-- + | A 2 - 2 ' -~L A s oo ~~ SS ab L ZA 3 Sz a 2 ae a 4 5 es "| = Sz gz pp el. s & | z = oe a Vos = tov E08 Fat TT Ty - 9A Po Pi | t a 02 -40 0 40 80 120 160 0 10 28 30 0 50 Ty, JUNCTION TEMPERATURE (C) Vps. DRAIN-TO-SOUACE VOLTAGE (VOLTS) Fig.9N lized Typical On-Resi Vs. Te Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage 3-474 Standard Power MOSFETs Po, POWER DISSIPATION (WATTS) o 20 40 60 80 100 120 140 Tc. CASE TEMPERATURE (C) Fig. 11 Power Vs. Temperature Derating Curve Vop = 36V 42 PRE = TkHz v, vi 0 , to scope Fig. 13 Switching Time Test Circuit 2N6755, 2N6756 26756 2N6756 Ty= 180C Ty = 2506. Ig, SOURCE CURRENT (AMPERES) 0 1 z Vp, SOURCE-TO-ORAIN VOLTAGE (VOLTS) Fig. 12 Typical Body-Drain Diode Forward Voltage tp - PULSE WIDTH YGS ton) 90% INPUT, Vj 50% 10% Vas jot ~nd INPUT PULSE INPUT PULSE ~ "RISE TIME FALL TIME i (ont c a (off) ty >| t Vos {off} To OUTPUT, Vp 90% VS (on) --> LL ton [a tos ~ Fig. 14 Switching Time Waveforms 3-475