PNP Silicon Transistors PNP Silicon Epitaxial Planar Transistors (l-=500mA) in TO-18 and TO-39 (=: TO-5) for fast switching and general purpose applications Common maximum ratings -Veso 5V -le 0,5A Prot(Tamp= 25C) 0,6W (TO-5): 0,4W (TO-18) Prot (Tcase= 25C) Ty 3W (TO-5): 1,8W (TO-18) 200C Common Vegisat) (-le=1 50mA, - Ip=1 5mA) fy (-Vce= 20V, f=100M Hz) Cob (-Vcp= 1 OV) characteristics 0,4V 200MHz 8pF Type Ratings Characteristics @ Tamb= 25C @ Vce=10V -lc=1mA -10mA -150mA' TO-39 TO-18 case case -Veso V -Vceo V -leso nA @ -VegV hoie hate have BSV 42 BSV 46 70 70 20 50 25 35 75...150 BSV 43A BSV 47A 60 60 20 50 40 40 40...120 BSV 43B BSV 47B 60 60 20 50 100 100 100...300 BSV 44A BSV 48A 60 40 20 50 25 35 40...120 BSV 44B BSV 48B 60 40 20 50 50 75 100...300 BSV 45A BSV 49A 30 30 25 20 25 35 40...120 BSV 45B BSV 49B 30 30 25 20 50 75 100...300 1 Pulsed PNP Silicon Epitaxial Planar Transistors (Ic==1A) in TO-39 (= TO-5) Type Maximum ratings Characteristics at Tamb = 25C @ P ab = 25C Tease = 25C Gcase (@ame) VesoV-Vceo Ve -VegoV ICA Prot W Piox W 7; C C/W -icganA = @:s-Vcan V 2.N 4030 60 60 5 1 0,8 4 200 < 44 (< 220) < 50 50 2.N 4031 80 80 5 1 0,8 4 200 < 44 (< 220) <50 60 2 N 4032 60 60 5 1 0,8 4 200 < 44 (< 220) < 50 50 2 N 4033 80 80 5 1 0,8 4 200 < 44 (< 220) < 50 60 Type Characteristics at T,,, = 25 C Gee = 8V @ @ Vce = D D c= O1mA le =100MA -Ig = 0,5A GHA Vee =10V -Vegg = 10V -l = 50 mA @ hate have have have Vee sat VV wtc/-Ig A/A_ fr MHz C22 PF 2 N 4030 > 30 40...120 > 25 > 15 <1 1/0,1 > 100 < 20 2 N 4031 > 30 40...120 > 25 > 10 <0,5 0,5/0,05 > 100 < 20 2 N 4032 > 75 100... 300 > 70 > 40 <1 1/0,1 > 150 < 20 2 N 4033 > 75 100...300 > 70 > 25 <0,5 0,5/0,05 > 150 < 20 TO-18 metal case Weight 0,35p Collector connected to case Dimensions in mm TO-39 (=TO-5) metal case Weight 1p Collector connector to case max, } | ese [> x 23 2 v max94% & E yd max.0,5% 29