2N3476~2N3581 Numerical Index gle MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS = ory = = = &| ce | REPLACE- | PAGE Po JE] Ts | Vee | Woe | = fre @ Ic Veesan @ Ic e| ft. le WE 1215 | ment | numper| USE & 5 2 Sg) |B] Tel =a @ 25C | S| C | (volts) | (volts) | = | (min) (max) 3S} (volts) 3 3 5|3 2N3476 S| N LPA 150W{ Cf 150} 150 150 O} 700) LOK 4.0A 3.5 9.0A1 100 E 4.0K] E 2N3477 S| N LPA 150W] C| 150] 200 200 O| 700) 1OK 4.0A 3.5 9.0A|{ 100 E 4.0K] E 2N3478 Ss} N RFA O.2W} A} 200 30 45 0 25) 150 2,0M 25 E 750M] T 2N3479 thru Unijunction Transistors, see Table on Page 1-174 2N3484 2N3485 | S| P 8-169 | HSS| 2.0W|] C] 200|/ 60 40 | O} 40] 120) 0.15A 0.4} O.15A 200M| T 2N3485A| S| P 8-169 ASS 2.0W!) GC} 200 60 60 0 40) 120) 0.154 0.4) 0.154 200M) T 2N3486 | S} P 8-169 | HSS} 2.0W] C}] 200} 60 40 | Q} 100] 300] 0.15A 0.4] 0,15A 200M; T 2N3486A| S| P 8-169 | HSS} 2.0W] C|] 200] 60 60 | O| 100; 300} 0.15A 0.47 0.154 200M; T 2N3487 S| N 7-169 LPA 115W] C] 200 80 60 0 20 60 3.0A 0.3 1.0A 20 E 10M} T 2N3488 | S| N 7-169 | LPA] 115w] C] 200] 100 80 | O} 20} 60} 3.0A 0.3) 1.0A] 20 | E 10M} T 2N3489 S| N 7-169 LPA 115W} C| 200; 120 100 0 15 45 3.0A 0.3 1.0A 20 E 10M] T 2N3490 S| N 7-169 LPA 115W} C{ 200 80 60 a 40] 120 5.0A 0.3 1.0A 40 E 10M] T 2N3491 | S| N 7-169 | LPA| 1L15W] C] 200} 100 80 | OF 40} 120] 5.0A 0.3] 1.0A} 40 | E 10M] T 2N3492 S| N 7-169 LPA 115W] C} 200] 120 100 0 30 90 5.0A 0.3 1.0A 40 E 10M] T 2N3493 8| N 8-228 HSS| 0.15W} AJ] 200 12 8.0 0 40] 120 0.5M 0.15 10* 400M; T 2N3494 | S| P 8-230 ) VID} 06.6W}) A} 200) 80 80 | OF 35 0.14 0.3 1OM} 40 ] E}] 200M] T 2N3495 | S] P 8-230 | VID} 0.6W] A] 200) 120 | 120 | O| 35 O.1M] 0.35 10M} 40 | EJ} 150M; T 2N3496 | S| P 8-230 | VID}; O.4wW] A} 200] 80 80 | Oo} 35 0.1A 0.3 1oM{ 40 ; E|} 200M] T 2N3497 | S| P 8-230 | VID} O.4w{ A} 200] 120 | 120 | Of 35 O.1M] 0.35 10M; 40 | E|] 150M} T 2N3498 S| N 8-232 VID 1.0w] A] 200] 100 100 Q 40} 120] 0.15A 0.2 LOM 50 E 150M] T 2N3499 { S| N 8-232 | VID} L.0w! Al 200) 106 | 100 | GO} 100] 300) 0.154 0.2 LOM) 75 ) E} 150M) T 2N3500 S|_N 8-232 VID 1.0W] A} 200} 150 150 0 40{ 120] 0.15A 0.2 10M 50 E 150M] T 2N3501 | S| N 8-232 | VID} 1.0W}] A} 200] 150 | 150 | O| 100] 300] 0.15A 0.2 LOM] 75 | Ef 150M] T 2N3502 | S| Pj 2N2905 | 8-169 | HSS| 0.7W] A] 200) 45 45 | O|] 115] 300 50M} 0.25 50M} 135 ] E| 200M} T 2N3503 | S| P| 2N2905A| 8-169 | HSS} 0.7W{ A] 200] 60 60 | O}] 115] 300 50M} 0.25 50M] 135 } E|] 200M] T 2N3504 S} Pj} 2N2907 8-169 HSS O.4W} A} 200 45 45 ) 115) 300 50M 0.25 50M} 135 E Z00M| T 2N3505 S| P|] 2N2907A| 8-169 HSs 0.4wW| A} 200 60 60 O; 115] 300 50M 0.25 50M] 135 E 200M| T 2N3506 S| N 8-238 HSS 1.0w] A] 200 60 40 0 40] 200 1.5A 1.0 1.5A 60M] T 2N3507 5S] N 8-238 HSs 1.0Ww] AJ] 200 80 50 0 30} 150 1.5A 1.0 1.5A 60M] T 2N3508 Ss; N 8-240 HSS 0.4w] A} 200 40 20 0 40] 120 10M 0,25 10M 500M| T 2N3509 S| N 8-240 HSS 0.4W1 Al 200 40 20 QO}; 100!) 300 10M 0.25 10M SOOM} T 2N3510 S|] N 8-243 HSS| 0.36W] A] 200 40 10 25] 150] 0.15A 0.25 10M 20 E 350M| T 2N3511 SEN 8-243 HSS; 0.36W] Ay 200 40 15 oO 30{ 120] 0.154 0.25 10M 20 E 450M| T 2N3512 S| N] 2N2537 8-151 HSs 0.8W| A} 200 60 35 a 10 . 1.0 0.5A 250M| T 2N3513 S| N] 2N2480A| 11-6 DFA| 0.25W] A} 200 80 40 Qa 50] 200 1.2 50M 50 E 50M} T 2N3514 S|) N DFA] 0.25W) Ay 175 80 40 0 50) 260 1.2 50M 50 E 50M| T 2N3515 S|] N 11-39 DFA] 0.25w] A| L75 80 40 0 50} 200 1.2 50M 50 E 50M! T 2N3516 S| N DFA{ 0.25Wi A| 200] 100 60 0 50! 200 1.2 50M 50 E 60M| T 2N3517 S| N DFA] 0.25W] A} 175] 100 60 50| 200 1,2 50M 50 E 60M] T 2N3518 S| N 11-39 DFA| 0.25W] A] 175] 100 60 oO 50] 200 1.2 50M 50 E 60M| T 2N3519 S| N DFA) Q.25W) A} 175 60 30 QO} 150) 600 1.0 5.0M] 150 Ez 60M) T 2N3520 | S| N DFA] 0.25W] A| 175] 60 30 | Of 150] 600 1.0]; 5.0M] 150 | E 60M] T 2N3521 S| N DFA 0.3W| A} 200 70 55 O} 100] 300 1.0 10M 30M| T 2N3522 S} ON DFA} 0.25W} A} 200 70 55 QO} 100; 300 1.0 10M 30M| T 2N3523 S| N DFA] 0.25Wy} A} 175 70 53 O} 100; 300 1.0 10M 30M} T 2N3524 S| N DFA| 0.25W] Al 175 70 55 QO! L100} 300 1.0 LOM 30M) T 2N3525 Thyristor, see Table on Page 1-154 2N3526 | S{ N VID} O.8wl| A} 200] 130 } 120 | O} 30] 120 30M 1.0 5OM| 25 | E 40M] T 2N3527 S} P AFA O.4wj A] 200 30 30 0 25 75 0.1N 0.1N] 100 E 5.0M| T 2N3528 thru Thyristors, see Table on Page 1-154 2N3541 2N3543 s{ N HPA 6ow|] Cc] 200 65 60 0 10 80 4.5A 1.0 4.5A L50M| T 2N3544 S| N 9-78 RFC O.3W} A] 175 25 25 Ss 25 10M 600M] T 2N3545 | S} P HSS] 0.36W] A] 200] 20 20 | O] 40) 120 10M 0.2 10M 250M| T 2N3546 S| P 8-246 HSS; 0.36W| Al 200 15 12 0 30; 120 10M 0.15 10M 7OOM) T 2N3547 | S| P LNA] 0.36W] A] 200| 60 60 | O}| 100] 500) 1.0m 1.0 10M/ 120 | E 45M] T 2N3548 | S| P LNA| 0.4W] A] 200] 60 45 1 O| 100] 300 10* 1.0 10M} 150 |] E 60M) T 2N3549 | S| P LNA} 0.4W;] Aj] 200] 60 60 | O| 100) 500 10* 1.0 10M] 150 | E 60M] T 2N3550 S| P LNA O.4w} A} 200 60 45 Oy; 200] 600 10* 0.9 5,0M} 300 E 60M| T 2N3551 Ss) N PHS 40w) Cy} 175] 115 60 o 20 90 210A 1.0 10A 40M| T 2N3552 8S] N PHS 40w] C| 175] 140 80 0 20 90 10A 1,0 LOA 40M| T 2N3553 S| N 6-69 HPA 7.0W}] C}] 200 65 40 10] 100] 0.254 1.0] 0,254 400M] T 2N3554 S| N Hss 0.8Ww; A} 200 60 30 0 25] 100} 0.75A O.7{ 0.754 150M] T 2N3555 thru 2N3562 2N3563 S| N RFA O.2W{ A] 125 30 12 0 20| 200 8.0M 20 E 600M] T 2N3564 | S| N RFA] 0.2W} Aj 125} 30 15 | 0; 20} 500 15M 0.3 20M] 20 | E{ 400M] T 2N3565 S| N} MPS6514| 5-109 AFA 0.2W] Af 125 30 25 OF 150] 600 1.0M 120 E 40M) T 2n3566 | s| N} mesesia] 5-109 | ara} o.3w] A] 125{ 40 } 30 | of 150] ooo) lom] i.o} Ov ta 40m] T 2N3567 | S| N| MPS6530] 5-118 | AFA] O.3w| A] 125] 80 | 40 | O} 40} 120] 0.15A] 0.25) 0.15A 60M] T 2N3568 Sj N AFA O.3w}] A} 125 80 60 Oo 40] 120] 0.154 0.25] O.15A 60M, T 2N3569 S|} N} MPS6531} 5-118 AFA O.3W} Ay 125 80 40 Of 100] 300] 0.15A 0.25} O,15A 60M| T 2N3570 S| N RFA 0.2W}] A] 200 30 15 0 20} 150 5.0M 20 E 1.5G] T 2N3571 S| N RFA O.2w} A} 200 25 15 0 20{ 200 5.0M 20 E 1.5) T 2N3572 S| N RFA O.2w] A} 200 25 13 0 20| 300 5.0M 20 E 1.0G] T 2N3573 thru 2N3575 2N3576 Ss; P HSS| 0.36wW| A[ 200 20 15 Oo 40| 120 10M 0.15 LOM 400m| T 2N3577 S|] N HPA 85w] C] 175] 100 80 oO 12 60 1.0A 5.25 1,0A 12 E 10M] T 2N3578 2N3579 P VID] O.4W|] Aj 200; 60 60 | O| 30) 120); 1.0m 0.5) 5.0M/ 30] E 80M) T 2N3580 | S| P VID] O.4w] A} 200] 60 60 | O} 60; 240/ 1.0M 0.5) 5.0M} 60] E 80M] T 2N3581 S| P VID 0.4W} A} 200 50 40 0 50} 150 0.1M 0.5 5.0M 50 E 30M| T 1-140Power Transistors SILICON POWER TRANSISTOR SELECTOR GUIDE (continued) Type Veto hee @ Ne Voce sat) @ Ne & \y - PNP Volts (Max) Min/Max Amp Volts (Mex) Amp | Amp 3.0 AMP (Timay = 200C) a Lo: 01 he O21 oS 6,15 Po = 6.0W : 1.5. 0.48 fr 3.0 MHz Go noe 0.195. *7 60 MHz : 0.6" 1,0: 0,325 80. Au O26 0.6 100 6.4125 Case 31 40 30/150 0.25 0.6 1.0 0.1 Solid Header 2N4238 60 30/150 0.25 0.6 1.0 0.1 , 2N4239 80 30/150 0.25 0.6 1.0 0.1 4.0 AMP (Tomax) = 200C) Po =10W | I J Case 31 tf; 4.0 MHz 2N4877 60 20/100 4.0 1.0 4.0 0.4 (T0-5) Pp =20W 2N3054* 60 25/100 0.5 1.0 0.5 0. 05 tf; 10 MHz 2N3766 60 40/160 0.5 1.0 0.5 0. 05 2N3767 80 40/160 0.5 1,0 0.5 0.05 : 0.280 0.8" 1,0 0.125 Pp = 25W 2b: . . : 16 *f 1.0 MHz gk : : st f 3.0 MHz ONag00. 1b 20/100. O68. : Te: . by ont, 4.0 MHz BO i af A0 : Case 80 re 2N4910 40 20/100 0.8 0.6 1,0 0.4 (10-66) 2N4911 60 20/100 O.5 0.6 1.0 0.1 2N4912 80 20/100 .5 0.6 1.0 0.1 MJ4101** 40 25/100 1.5 1,0 1.5 0,15 2N4231 40 25/100 1.5 0.7 1.5 0.15 = 35 . Po = 2 He 2N4232 60 25/100 1.5 0.7 1.5 0,15 mT" 2N4233 | 80 25/100 1.5 0.7 1.5 0.15 5.0 AMP (Tacmax) = 200C) o2N4905 Pp = 87.5W 5 -2N4006 f+ 4.0 MHz Case 11 r 2N4913 40 25/100 2.5 1.0 2.5 0.25 . 2N4914 60 25/100 2.5 1.0 2.5 0.25 2N4915 80 25/100 2.5 1.0 2.5 0.25 2N5067 40 20/80 1.0 0.4 1.0 O.1 2N5068 60 20/80 1.0 0.4 1,0 0.1 2N5069 80 20/80 1.0 0.4 1.0} 9.3 Pp=li7Ww 2N1724 80 20/90 2.0 1.0 2.0 0.2 - fy 10 MHz 2N1725 80 50/150 2.0 1,0 2.0 0.2 Case 9 (T0-61) 7.5 AMP (Tucan = 200C) 2N3445 60 20/60 3.9 1.5 3.0 0.3 Pp = 115 W 2N3446 80 20/60 3.0 1.5 3,0 0.3 f- 10 MHz 2N3447 60 40/120 3.0 1.5 5.0 0.5 Case 11 2N3448 80 40/120 5.0 1.5 5.0 0.5 (T0-3) Pp =117W fy 1.0 MHz 2N3232 60 15/75 3.0 2.5 3.0 0.2 Case l (70-3) 2N3487 60 20/60 3.0 1.2 3.0 0.3 2N3488 80 20/60 3.0 1,2 3.0 0.3 Po = 117W 2N3489 100 15/45 3.0 1.2 3.0 0.3 fr 10 MHz 2N3490 60 40/120 5.0 1.0 3.0 0.3 Case 9 2N3491 80 40/120 5.0 1.0 3.0 0.3 (70-61) 2N3492 100 30/90 5.0 1.0 3.0 0.3 II\QQKL},]} WN A QGV,. WC X DK QQ) WW Ql |'"M)NWWWWWD oe F AGDA nz i|I\){ Power Transistors 2N9487 thru 2N 3492 (siticon) CASE 9 (10-61) MAXIMUM RATINGS Vos = 80-120 V lo =7.5A Pp = 117W NPN silicon power transistors designed for switch- ing and amplifier applications. . 2N3487 | 2N3488 | 2N3489 . Rating Symbol | 9N3490 | 2N3491 | 2N3492 | Unit Collector -Base Voltage Yop 80 100 120 Vde Collector-Emitter Voltage Voro 60 80 100 Vde Emitter -Base Voltage EB 10 10 10 Vde Collector Current (Continuous) Io 7.5 7.5 7.5 Adc Base Current (Continuous) Ib 4.0 4.0 4.0 Ade Power Dissipation Py 117 117 117 Watts Thermal Resistance, Junction to Case Ic 1.5 1.5 1.5 c/w Junction Operating Temperature Range T J -65C to + 200C c 7-1152N3487 thru 2N3492 (continued) Power Transisfors ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) Characteristic Symbol {Min{ Max | Unit Emitter -Base Cutoff Current TBO mAdc (Vig = 10 Vde All Types - | 0.10 EB Collector-Emitter Cutoff Current lorx yAdC Vor = 60 Vdc, Vor = -1 Vdc) 2N3487, 2N3490 - 25 Vor = 80 Vdc, Ver? -1 Vdc) 2N3 488, 2N3491 - 25 (Vor = 100 Vac, Vor -1 Vdc) 2N3 489 , 2N3492 - 25 Vor = 60 Vdc, Vor = -1 Vde, To = 150C) 2N3487, 2N3490 - 250 Vag = 80 Vde, Vi. = -1 Vde, T, = 150C) 2N3488, 2N3491 - 250 CE BE Cc Vor = 100 Vdc, Vor = -1 Vdc, Te = 150C) 2N3489, 2N3492 - 250 Collector-Emitter Cutoff Current loro Adc Vor = 40 Vdc, In= 0) 2N3 487, 2N3490 - 250 Vor = 60 Vdc, I, = 0) 2N3488, 2N3491 - 250 Vor = 80 Vdc, I,7 0) 2N3 489 , 2N3492 - 250 Collector-Base Breakdown Voltage BYR Vde Gp = 100 pAdc, L. = 0) 2N3487, 2N3490 80; - 2N3 488, 2N3491 100| - 2N3 489, 2N3492 120| - Collector-Emitter Sustaining Voltage V crO(sus) Vde Ig = 100 mAdc, In = 0) 2N3487, 2N3490 60} - 2N3488, 2N3491 80; - 2N3 489 , 2N3490 100] - DC Current Gain her - (Ig = 0.5 Adc, Vor = 5 Vdc) 2N3487, 2N3488, 2N3489 20} - 2N3490, 2N3491, 2N3492 40; - (Ip = 3.0 Ade, Vor = 5 Vdc) 2N3487, 2N3488 20| 60 2N3.489 15/ 45 Mg = 5.0 Adc, Vor = 5 Vdc) 2N3490, 2N3491 40| 120 2N3492 30] 90 Collector -Emitter Saturation Voltage VoR(s at) Vde (lg = 1 Adc, In = 0.1 Adc) - 0.3 (Ig = 8 Adc, I, = 0.3 Adc) 2N3487, 2N3488, 2N3489 - 4.2 2N3 490, 2N3491, 2N3492 - 1.0 Ug = 5 Adc, IL = 0.5 Adc) 2N3490, 2N3491, 2N3492 - 1.5 Base-Emitter Saturation Voltage Viex(sat) Vde (Ig = 3 Adc, I, = 0.3 Adc) 2N3487, 2N3488, 2N3489 - 1.5 (I, = 5 Ade, L, = 0.5 Adc) 2N3490, 2N3491, 2N3492 - 1.5 Cc B Base-Emitter Voltage VBE Vde (Ip = 3 Adc, Vor = 5 Vdc) 2N3 487, 2N3488, 2N3489 - 1. (I, = 5 Ade, V. = 5 Vdc) 2N3490, 2N3491, 2N3492 - 1. Cc "CE Small Signal Current Gain Ne - (Vop= 10 Vdc, In = 0.5 Adc, f = 1 kHz) 2N3487, 2N3488, 2N3489 20| 100 2N3 490, 2N3491, 2N3492 40 | 200 (Vap= 10 Vde, 1, = 0.5 Ade, f = 10 MHz) 1.0} - Common Base Output Capacitance Cc ob pF (Vag = 10 Vde, f = 0.1 MHz) - 400 CB , Switching Times LS (Vog = 25 Vde, Ry = 50, 1, = 5 Ade, Ip, Ip, = 0-5 Adc) - | - Delay Time plus Rise Time t at t,. - 0.35 us Storage Time t, - 2.0 Fall Time t - | 0.35 7-116Power Transistors 2N3487 thru 2N3492 (continued) FIGURE 1 - POWER-TEMPERATURE DERATING CURVE 120 100 80 oe 60 <a Py Power Dissipation (Watts) 40 p> 20 ~ 0 P| 0 25 50 15 100 125 150 175 200 T.., Case Temperature (c) Cc FIGURE 2 DC CURRENT GAIN versus COLLECTOR CURRENT 100 = nt 2N3490/ | 2 2N3491 [-~ g 80 2N3492 o M 2 IN f 60 N by 40 3 + ba 2N3487 2N3488 _ a ~~ 2N3489 ~ 20 0 0.1 0.2 0.3 0.4 0.5 0.8 1.0 2.0 3.0 4.0 5.0 8.0 10 To Collector Current (Amps) ACTIVE - REGION SAFE OPERATING AREAS FIGURE 3 FIGURE 4 FIGURE 5 2N3487, 2N3490 2N3489, 2N3492 2N3488, 2N3491 ims 0.5ms 0.5ms 0.5ms = o 50 BS or less 5.0 US or less 5ms 5ms rors . o 0.5 ims o m Io (Collector Current (Amps) o ot 2 20 40 60 80 0 20 40 60 80 100 0 20 40 60 80 100) 120 Vor Collector-Emitter Voltage (Volts) 7-117