DATA SH EET
Product data sheet 2004 Feb 18
DISCRETE SEMICONDUCTORS
PESDxS2UAT series
Double ESD protection diodes
in SOT23 package
2004 Feb 18 2
NXP Semiconductors Product data sheet
Double ESD protection diodes
in SOT23 package PESDxS2UAT series
FEATURES
Unidirectional ESD protection of up to two lines
Common-cathode configu ration
Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs
Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A
Ultra-lo w reverse leakage current: IRM < 700 nA
ESD protection > 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (s urge); Ipp = 18 A at tp = 8/20 µs.
APPLICATIONS
Computers and pe ripherals
Communication syste ms
Audio and video eq uipment
Data lines
CAN bus protection .
DESCRIPTION
Unidirectional double ESD protection diodes in common
cathode configuration in the SOT23 plas tic package.
Designed to protec t up to two transmiss i on or data lines
against damage from Electr oStatic Discharge (ESD) and
other transients.
MARKING
Note
1. * = p : made in Hong Kong .
* = t : made in Malaysia.
* = W : made in China.
QUICK REFERENCE DATA
PINNING
TYPE NUMBER MARKING CODE(1)
PESD3V3S2UAT *7A
PESD5V0S2UAT *7B
PESD12VS2UAT *7C
PESD15VS2UAT *7D
PESD24VS2UAT *7E
SYMBOL PARAMETER VALUE UNIT
VRWM reverse stand-off
voltage 3.3, 5, 12, 15
and 24 V
Cddiode capacitance
VR = 0 V;
f = 1 MHz
207, 152, 38, 32
and 23 pF
number of
protected lines 2
PIN DESCRIPTION
1anode 1
2anode 2
3common cathode
sym002
2
1
3
1
2
001aaa40
1
3
Fig.1 Simplified outline (SOT23 ) and symbo l .
2004 Feb 18 3
NXP Semiconductors Pr oduct data sheet
Double ESD protection diodes
in SOT23 package PESDxS2UAT series
ORDERING INFORMATION
LIMITING VALUES
In accordance with th e Absolute Maximum Rating System (IEC 60134).
Notes
1. Non-repetitive current pulse 8/20µ µs exponential decay waveform; see Fig.2.
2. Measured across either pins 1 and 3 or pins 2 and 3.
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
PESD3V3S2UAT plastic surface mounted package; 3 leads SOT23
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Ppp peak pulse power 8/20 µs pulse; notes 1 and 2
PESD3V3S2UAT 330 W
PESD5V0S2UAT 260 W
PESD12VS2UAT 180 W
PESD15VS2UAT 160 W
PESD24VS2UAT 160 W
Ipp peak pulse current 8/20 µs pulse; notes 1 and 2
PESD3V3S2UAT 18 A
PESD5V0S2UAT 15 A
PESD12VS2UAT 5 A
PESD15VS2UAT 5 A
PESD24VS2UAT 3 A
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
Tstg storage temperature 65 +150 °C
2004 Feb 18 4
NXP Semiconductors Pr oduct data sheet
Double ESD protection diodes
in SOT23 package PESDxS2UAT series
ESD maximum ratings
Notes
1. Device stressed with ten non-repetitive ESD pulses; see Fig.3.
2. Measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
ESD electrostatic discharge IEC 61000-4-2 (c ontact disc harge);
notes 1 and 2
PESD3V3S2UAT 30 kV
PESD5V0S2UAT 30 kV
PESD12VS2UAT 30 kV
PESD15VS2UAT 30 kV
PESD24VS2UAT 23 kV
HBM MIL-Std 883
PESDxS2UAT-series 10 kV
ESD standards compliance
ESD STANDARD CONDITIONS
IEC 61000-4-2 ; level 4 (ESD); see Fig.3 > 15 kV (air); > 8 kV (contact)
HBM MIL-Std 883; class 3 > 4 kV
handbook, halfpage
010
et
20 t (µs)
Ipp
(%)
40
120
0
40
80
30
MLE218
100 % Ipp; 8 µs
50 % Ipp; 20 µs
Fig.2 8/20 µs pulse waveform according to
IEC 61000-4-5.
001aaa19
1
Ipp
1
00 %
90 %
t
30 ns 60 ns
10 %
tr = 0.7 to 1 ns
Fig.3 ElectroStatic Discharge (ESD) pulse
waveform according to IEC 61000-4-2.
2004 Feb 18 5
NXP Semiconductors Pr oduct data sheet
Double ESD protection diodes
in SOT23 package PESDxS2UAT series
ELECTRICAL CHARACTERISTIC S
Tj = 25 °C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VRWM revers e stand-off voltage
PESD3V3S2UAT 3.3 V
PESD5V0S2UAT 5 V
PESD12VS2UAT 12 V
PESD15VS2UAT 15 V
PESD24VS2UAT 24 V
IRM reverse leakage curre nt
PESD3V3S2UAT VRWM = 3.3 V 0.7 2µA
PESD5V0S2UAT VRWM = 5 V 0.1 1µA
PESD12VS2UAT VRWM = 12 V <1 50 nA
PESD15VS2UAT VRWM = 15 V <1 50 nA
PESD24VS2UAT VRWM = 24 V <1 50 nA
VBR breakdown voltage IZ = 5 mA
PESD3V3S2UAT 5.2 5.6 6.0 V
PESD5V0S2UAT 6.4 6.8 7.2 V
PESD12VS2UAT 14.7 15.0 15.3 V
PESD15VS2UAT 17.6 18.0 18.4 V
PESD24VS2UAT 26.5 27.0 27.5 V
Cddiode capacitance f = 1 MHz; VR = 0 V
PESD3V3S2UAT 207 300 pF
PESD5V0S2UAT 152 200 pF
PESD12VS2UAT 38 75 pF
PESD15VS2UAT 32 70 pF
PESD24VS2UAT 23 50 pF
V(CL)R clamping voltage notes 1 and 2
PESD3V3S2UAT Ipp = 1 A 7 V
Ipp = 18 A 20 V
PESD5V0S2UAT Ipp = 1 A 9 V
Ipp = 15 A 20 V
PESD12VS2UAT Ipp = 1 A 19 V
Ipp = 5 A 35 V
PESD15VS2UAT Ipp = 1 A 23 V
Ipp = 5 A 40 V
PESD24VS2UAT Ipp = 1 A 36 V
Ipp = 3 A 70 V
2004 Feb 18 6
NXP Semiconductors Pr oduct data sheet
Double ESD protection diodes
in SOT23 package PESDxS2UAT series
Notes
1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2.
2. Measured either across pins 1 and 3 or pins 2 and 3.
Rdiff differential resistance
PESD3V3S2UAT IR = 1 mA 400
PESD5V0S2UAT IR = 1 mA 80
PESD12VS2UAT IR = 1 mA 200
PESD15VS2UAT IR = 1 mA 225
PESD24VS2UAT IR = 0.5 mA 300
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
GRAPHICAL DATA
001aaa147
103
102
104
Ppp
(W)
10
tp (µs)
110
4
103
10 102
(1)
(2)
Fig.4 Peak pulse power dissipation as a function
of pulse time; typical values.
Tamb = 25 °C.
tp = 8/20 µs exponential decay waveform; see Fig.2.
(1) PESD3V3S2UAT and PESD5V0S2UAT.
(2) PESD12VS2UAT, PESD15VS2UAT, PESD24VS2UAT
Tj (°C)
0 20015050 100
001aaa193
0.4
0.8
1.2
PPP
0
PPP(25°C)
Fig.5 Relative var iation of peak puls e power as a
function of junction temperature; typical
values.
2004 Feb 18 7
NXP Semiconductors Pr oduct data sheet
Double ESD protection diodes
in SOT23 package PESDxS2UAT series
VR (V)
054231
001aaa148
120
160
80
200
240
Cd
(pF)
40
(1)
(2)
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
Tamb = 25 °C; f = 1 MHz.
(1) PESD3V3S2UAT; VRWM = 3.3 V.
(2) PESD5V0S2UAT; VRWM = 5 V.
VR (V)
0252010 155
001aaa149
20
30
10
40
50
Cd
(pF)
0
(1)
(3)
(2)
Fig.7 Diode capacitance as a function of reverse
voltage; typical values.
Tamb = 25 °C; f = 1 MHz.
(1) PESD12VS2UAT; VRWM = 12 V.
(2) PESD15VS2UAT; VRWM = 15 V.
(3) PESD24VS2UAT; VRWM = 24 V.
2004 Feb 18 8
NXP Semiconductors Pr oduct data sheet
Double ESD protection diodes
in SOT23 package PESDxS2UAT series
001aaa270
1
10
101
Tj (°C)
100 15010005050
IR
IR(25˚C)
(1)
Fig.8 Relative variation of reverse leakage
current as a func tion of junction
temperature; typical values.
IR is less than 10 nA at 150 °C for:
PESD12V52UAT; VRWM = 12 V.
PESD15VS2UAT; VRWM = 15 V.
PESD24VS2UAT; VRWM = 24 V.
(1) PESD3V3S2UAT; VRWM = 3.3 V.
PESD5V0S2UAT; VRWM = 5 V.
2004 Feb 18 9
NXP Semiconductors Pr oduct data sheet
Double ESD protection diodes
in SOT23 package PESDxS2UAT series
001aaa15
1
450
50
Note 1: IEC61000-4-2 network
CZ = 150 pF; RZ = 330
D.U.T.: PESDxS2UAT
RG 223/U
50 coax
RZ
CZ
ESD TESTER 4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
vertical scale = 200 V/div
horizontal scale = 50 ns/div vertical scale = 20 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div vertical scale = 10 V/div
horizontal scale = 50 ns/div
G
ND
GND
GND
GND
GND
GND
GND
unclamped +1 kV ESD voltage waveform
(IEC61000-4-2 network) clamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
G
ND
unclamped 1 kV ESD voltage waveform
(IEC61000-4-2 network) clamped 1 kV ESD voltage waveform
(IEC61000-4-2 network)
note 1
PESD24VS2UAT
PESD15VS2UAT
PESD12VS2UAT
PESD5V0S2L
PESD3V3S2UAT
Fig.9 ESD clamping test set-up an d waveforms.
2004 Feb 18 10
NXP Semiconductors Pr oduct data sheet
Double ESD protection diodes
in SOT23 package PESDxS2UAT series
APPLICATION INFORMATION
The PESDxS2UAT series can protect up to two lines against damage caused by unidirectional ElectroStatic Discharge
(ESD) and surge pulses. The PESDxS2UAT series can protect lines whose signal polarities are below ground.
PESDxS2UAT series provide a surge capability of up to 330 Watts peak pulse power pe r line for a 8/20 µs waveform.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The
following guidelines are recommended:
1. Place the PESDxS2UAT as close as possible to the input terminal or connector.
2. Minimize the path length between the PESDxS2UAT and the protected line.
3. Keep parallel signal paths to a minimum.
4. Avoid running prote cted conductors in parallel with unprotected conductors.
5. Minimize all printed-ci rcuit board conductive loops including power an d ground loops.
6. Minimize the length of transien t retur n paths to ground.
7. Avoid using shared trans i ent return paths to a common gro un d point.
8. Ground planes should be used whenever possible.
9. Use vias for multi-layer printed-circuit boards.
001aaa17
9
PESDxS2UAT
line 1 to be protected
unidirectional protection
of two lines bidirectional protection
of one line
line 2 to be protected
ground
PESDxS2UAT
line 1 to be protecte
d
ground
Fig.10 Typical application: ESD protection of data lines.
2004 Feb 18 11
NXP Semiconductors Pr oduct data sheet
Double ESD protection diodes
in SOT23 package PESDxS2UAT series
PACKAGE OUTLINE
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
2004 Feb 18 12
NXP Semiconductors Pr oduct data sheet
Double ESD protection diodes
in SOT23 package PESDxS2UAT series
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document befor e initiating or co mpleting a design.
2. The product s ta tus of device(s) described in this do cument may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the produc t s pecification.
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Limiting values Stress above one or more limiting
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System of IEC 60134) may cause permanent damage to
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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
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Printed in The Netherlands R76/01/pp13 Date of release: 2004 Feb 18 Document order number: 9397 750 12247