©2000 Fairchild Semiconductor International Rev. A, February 2000
BD375/377/379
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed
hFE Classification
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BD375
: BD377
: BD379
50
75
100
V
V
V
VCEO Collector-Emitter Voltage : BD375
: BD377
: BD379
45
60
80
V
V
V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 2 A
ICP *Collector Current (Pulse) 3 A
IB Base Current 1 A
PC Collector Dissipation (TC=25°C) 25 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condi tion Min. Typ. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage
: BD375
: BD377
: BD379
IC = 100mA , IB = 0 45
60
80
V
V
V
BVCBO Collector-Base : BD375
Breakdown Voltage : BD377
: BD379
IC = 100µA, IE = 0 50
75
100
V
V
V
ICBO Collect o r Cut- o ff Current : BD375
: BD377
: BD379
VCB = 45V, IE = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
2
2
2
µA
µA
µA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 100 µA
hFE1
hFE2
* DC Current Gain VCE = 2V, IC = 0.15A
VCE = 2V, IC = 1A 40
20 375
VCE(sat) * Collector-Emitter Saturation Voltage IC = 1A, IB = 0.1A 1 V
VBE(on) * Base-Emitter ON Voltage VCE = 2V, IC = 1A 1.5 V
tON Turn ON Time VCC = 30V, IC = 0.5A
IB1 = - IB2 = 0.05A
RL = 60Ω
50 ns
tOFF Turn OFF Time 500 ns
Classification 6 10 16 25
hFE1 40 ~ 100 63 ~ 160 100 ~ 250 150 ~ 375
BD375/377/379
Medium Power Linear and Switching
Applications
• Complement to BD376, BD378 and BD380 respectively
1TO-126
1. Emitter 2.Collector 3.Base
©2000 Fairchild Semiconductor International
BD375/377/379
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter Voltage Figure 4. Safe Operating Area
Figure 5. Power Derating
10 100 1000
0
20
40
60
80
100
VCE = -2V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1E-3 0.01 0.1 1 10
0
100
200
300
400
500
IC = 20 . IB
I
C
= 10.I
B
VCE(sat)(mV), SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
1E-3 0.01 0.1 1 10
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V
BE
(sat)
Ic = 10.I
B
V
BE
(on)
V
CE
= 5V
VBE(V), BASE EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10 100
0.01
0.1
1
10
S/b LIMITED
BD379
BD375
VCEO MA X.
BD377
ICMAX. (Continuous)
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
5
10
15
20
25
30
35
40
PC[W], POWER DISSIPATION
Tc[oC], CASE TEMPERATURE
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BD375/377/379
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2000 Fairchild Semiconductor International Rev. E
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