2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013
IRLHS6342PbF
S
D
G
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.39mH, RG = 50Ω, IAS = 8.5A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Rθ is measured at TJ of approximately 90°C.
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature.
Package is limited to 12A by die-source to lead-frame bonding technology
Parameter Typ. Max. Units
R
(Bottom)
––– 13
°C/W
R
––– 60
Junction-to-Ambient (<10s)
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient ––– 22 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 12.0 15.5
––– 15.0 19.5
V
GS(th)
Gate Threshold Voltage 0.5 ––– 1.1 V
V
GS(th)
Gate Threshold Voltage Coefficient ––– -4.2 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 39 ––– ––– S
Q
g
Total Gate Charge ––– 11 ––– V
DS
= 15V
Q
gs
Gate-to-Source Charge ––– 0.5 –––
Q
gd
Gate-to-Drain Charge ––– 4.6 –––
R
G
Gate Resistance ––– 2.1
Ω
t
d(on)
Turn-On Delay Time ––– 4.9 –––
t
r
Rise Time –––13–––
t
d(off)
Turn-Off Delay Time ––– 19 –––
t
f
Fall Time ––– 13 –––
C
iss
Input Capacitance ––– 1019 –––
C
oss
Output Capacitance ––– 97 –––
C
rss
Reverse Transfer Capacitance ––– 70 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
A
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
c
V
SD
Diode Forward Voltage ––– ––– 1.2 V
t
rr
Reverse Recovery Time ––– 11 17 ns
Q
rr
Reverse Recovery Charge ––– 13 20 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
V
DS
= V
GS
, I
D
= 10μA
V
GS
= 2.5V, I
D
= 8.5A
e
Typ.
mΩ
V
DD
= 15V, V
GS
= 4.5V
–––
R
G
=1.8Ω
V
DS
= 10V, I
D
= 8.5A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
μA
I
D
= 8.5A (See Fig. 6 & 17)
I
D
= 8.5A
V
GS
= 0V
V
DS
= 25V
V
DS
= 24V, V
GS
= 0V
T
J
= 25°C, I
F
= 8.5A, V
DD
= 15V
di/dt = 300 A/μs
e
T
J
= 25°C, I
S
= 8.5A, V
GS
= 0V
e
showing the
integral reverse
p-n junction diode.
Conditions
See Fig.18
Max.
14
8.5
ƒ = 1.0MHz
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 4.5V, I
D
= 8.5A
e
––– ––– 76
––– ––– 12
i
MOSFET symbol
nA
ns
A
pF
nC V
GS
= 4.5V
–––
V
GS
= 12V
V
GS
= -12V