©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
KSC2335
NPN Epitaxia l Si licon Transistor
Absolute Maximum Ratin g s TC=25°C unless otherwise noted
* PW≤300µs, Duty Cycle≤10%
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
hFE Classification
Symbol Parameter Value Units
VCBO Collector-Base Voltage 500 V
V CEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current (DC) 7 A
ICP *Collector Current (Pulse) 15 A
IB Base Current (DC) 3.5 A
PC Collector Dissipation (Ta=25°C) 1.5 W
PC Collector Dissipation (TC=25°C) 40 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage IC = 3A, IB1 = 0.6A, L = 1mH 400 V
VCEX(sus)1 Collector-Emitter Sustaining Voltage IC = 3A, IB1 = -IB2 = 0.6A
VBE(off) = -5V, L = 180µH, Clamped 450 V
VCEX(sus)2 Collector-Emitter Sustaining Voltage IC = 6A,IB1= 2A, IB2 = -0.6A
VBE(off) = -5V, L = 180µH, Clamped 400 V
ICBO Collector Cut-of f Current VCB = 400V, IE = 0 10 µA
ICER Collector Cut-of f Current VCE = 400V, RBE= 51Ω @ TC=125°C 1mA
ICEX1 Collector Cut- off Current VCE = 400V, VBE(off)= -1.5V 10 µA
ICEX2 Collector Cut-of f Current VCE = 400V, VBE(off)= -1.5V @
TC=125°C 1mA
IEBO Em itter Cut-off Current VEB = 5V, IC = 0 10 µA
hFE1
hFE2
hFE3
* DC Current Gain VCE = 5V, IC = 0.1A
VCE = 5V, IC = 1A
VCE = 5V, IC = 3A
20
20
10
80
80
VCE(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 0.6A 1 V
VBE(sat) * Base-Emitter Satur ation Voltage IC = 3A, IB = 0.6A 1.2 V
tON Turn ON Time VCC =150V, IC= 3A
IB1 = - IB2 = 0.6A
RL= 50Ω
1 µs
tSTG St orage Time 2.5 µs
tF Fa ll Time 1 µs
Classification R O Y
hFE2 20 ~ 40 30 ~ 60 40 ~ 80
KSC2335
High Speed, High Voltage Switching
• Industrial Use
1.Base 2.Collector 3.Emitter
1TO-220