TOSHIBA {DISCRETE/OPTO} . b? dePsoqzeso ooosas 7 Li 9097250 TOSHIBA (DISCRETE/OPTO) . . | 67C 09285. 0 T7O3-09 - - 1 NOQ1 4, 1 NO1 4A, Silicon Epitaxial : Planar Type ___1N914B Diode a a ae TENTATIVE : COMMUNICATION AND INDUSTRIAL APPLICATIONS. \ HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS. FEATURES: | . Low Forward Voltage : Vp=1.0V (Max.) Small Total Capacitance : Cr=4pF (Max.) Unit in mn IN, | | BRO MAX, + Fast Reverse Recovery Time : tyy=4ns (Max.) Hermetically Sealded Miniature Glass Package, 260M. 4.2MAX CATHODE MARK MAXIMUM RATINGS" (Ta=25C) CHARACTERISTIC SYMBOL RATING UNIT gos = Maximum (Peak) Reverse Voltage VRM 100 v 5 Reverse Voltage Vp 75 Vv * Maximum (Peak) Forward Current Ipu 450 mA TEDEO es Average Forward Current Io 150 mA EIAS 5C40 : Surge Current (lus) Irsy 2 A TOSHIBA 1-2AlA Power Dissipation " P 500 mW Weight : 0.142 , Junction Temperature Tj 200 c Storage Temperature Range Tstg | -65~ 200} c ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT 1N914 vr(1) | Ip=10mA = lo75 {1.0 |v Forvard Voltage IN9I4A | _Vp(2) | Tr=20mA - 0.79 | 1.0] v 1N9148 VE(3) | Ir=5mA 0.62 |0,67 |0.72 Vv VF (4) | Ip=100mA - 0.9 | 1.0 Vv IR(1) | VR=20V - - 25 | na Reverse Current .- TR(2) | Vp=20V, Ta=150C - - 50 | 4A TR(3) | Vp=75V - - 5 | aA Total Capacitance Cr Vp=0, f=1MHz - 1.5 4 pF Reverse Recovery Time trr Tp~l0mA, Vp=6V - 2.0 4 ns RL=1008, Ipy=lmA TOSHIBA CORPORATION 120