© 2007 Microchip Technology Inc. DS21293C-page 1
MCP3001
Features
10-bit resolution
±1 LSB max DNL
±1 LSB max INL
On-chip sample and hold
SPI™ serial interface (modes 0,0 and 1,1)
Single supply operation: 2.7V - 5.5V
200 ksps sampling rate at 5V
75 ksps sampling rate at 2.7V
Low power CMOS technology
- 5 nA typical standby current, 2 µA max
- 500 µA max active current at 5V
Industrial temp range: -40°C to +85°C
8-pin PDIP, SOIC, MSOP and TSSOP packages
Applications
Sensor Interface
Process Control
Data Acquisition
Bat ter y Operated Systems
Description
The Microchip Technology Inc. MCP3001 is a succes-
sive approximation 10-bit A/D converter (ADC) with on-
board s am ple and hold c irc uit ry. The devic e p rov id es a
single pseudo-differential input. Differential Nonlinear-
ity (DNL ) and Inte gral Non linear ity (IN L) are bo th spe c-
ified at ±1 LSB max. Communication with the device is
done usin g a simple serial inter face compatible with the
SPI prot oc ol. The de vi ce is c ap a ble of samp le rates up
to 200 k sps at a clo ck rate of 2.8 MHz. Th e MCP3001
operates over a broad voltage range (2.7V- 5.5V).
Low current design permits operation with a typical
stan dby current of only 5 nA and a typical active current
of 400 µA. The device is offered in 8-pin PDIP, MSOP,
TSSOP and 150 mil SOIC packages.
Package Types
Functional Block Diagram
VREF
IN+
IN–
VSS
VDD
CLK
DOUT
CS/SHDN
1
2
3
4
8
7
6
5
PDIP, MSOP, SOIC, TSSOP
MCP3001
Illustration not to scale
Comparator
Sample
and
Hold
10-Bit SAR
DAC
Control Logic
CS/SHDN
VREF
IN+
IN-
VSS
VDD
CLK DOUT
Shift
Register
2.7V 10-Bit A/D Converter with SPI Serial Interface
SPI™ is a trademark of Motorola Inc.
MCP3001
DS21293C-page 2 © 2007 Microchip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
1.1 Maximum Ratings*
VDD.........................................................................7.0V
All inputs and outputs w.r.t. VSS ...... -0.6V to VDD +0.6V
Storage temperature ..........................-65°C to +150°C
Ambient temp. with power applied .....-65°C to +125°C
ESD protection on all pins (HBM)........................> 4kV
*Notice: S tresses above those li sted under “Maximum ratings”
may cause permanent damage t o the device. This is a st res s
rating only and functional operation of the device at those or
any other conditions above those indicated in the operational
listings of this specification is not implied. Expos ure to maxi-
mum rating conditions for extended periods may affect device
reliability.
PIN FUNCTION TABLE
ELECTRICAL CHARACTERISTICS
Name Function
VDD +2.7V to 5.5V Power Supply
VSS Ground
IN+ Positive Analog Input
IN- Negative Analog Input
CLK Serial Clock
DOUT Serial Data Out
CS/SHDN Chip Select/Shutdown Input
VREF Refe renc e Voltage Input
All pa rameter s ap ply at VDD = 5V, VSS = 0V, VREF = 5V, TAMB = -40°C to +85°C, fSAMPLE = 200 ksp s an d fCLK = 14*fSAMPLE,
unless otherwise noted. Typical values apply for VDD = 5V, TAMB =25°C, unless otherwise noted.
Parameter Sym Min Typ Max Units Conditions
Conversion Rate:
Conve r si on Time tCONV 10 clock
cycles
Analog Input Sample Time tSAMPLE 1.5 clock
cycles
Throughput Rate fSAMPLE 200
75 ksps
ksps VDD = VREF = 5V
VDD = VREF = 2.7V
DC Accuracy:
Resolution 10 bits
Integral Nonl ine ari ty INL ±0 .5 ±1 LSB
Differential Nonlinearity DNL ±0.25 ±1 LSB No missing codes over tem-
perature
Offset Error ±1.5 LSB
Gain Error ±1 LSB
Dynamic Performance:
Total Harmonic Distortion THD -76 dB VIN = 0.1V to 4.9V@1 kHz
Signal to Noise and Distortion
(SINAD) SINAD 61 dB VIN = 0.1V to 4.9V@1 kHz
Spurious Free Dynamic Range SFDR 80 dB VIN = 0.1V to 4.9V@1 kHz
Reference Input:
Voltage Rang e VREF 0.25 VDD VNote 2
Current Drain IREF —90
0.001 150
3µA
µA CS = VDD = 5V
Note 1: This parameter is guaranteed by characterization and not 100% tested.
2: See graph that relates linearity performance to VREF level.
3: Because the sample cap will eventually lose charge, clock rates below 10 kHz can affect linearity perfor-
mance, especially at elevated temperatures.
© 2007 Microchip Technology Inc. DS21293C-page 3
MCP3001
Temperature Ranges:
Specified Temperature Range TA-40 +85 °C
Operati ng Temperature Range TA-40 +85 °C
Storage Temperature Range TA-65 +150 °C
Thermal Package Resistance:
Thermal Resistance, 8L-PDIP θJA —85°C/W
Thermal Resistance, 8L-SOIC θJA —163°C/W
Thermal Resistance, 8L-MSOP θJA —206°C/W
Thermal Resistance, 8L-TSSOP θJA ——°C/W
Analog Inputs:
Input Voltage Range (IN+) IN+ IN- VREF+IN- V
Input Voltage Range (IN-) IN- VSS-100 VSS+100 mV
Leakage Current 0.001 ±1 µA
Switch Resistance RSS —1K ΩSee Figure 4-1
Sample C apacitor CSAMPLE 20 pF See Figure 4-1
Digital Input/Output:
Data Coding Format Straight Binary
High Level Input Voltage VIH 0.7 VDD ——V
Low Level Input Voltage VIL ——0.3 V
DD V
High Level Output Voltage VOH 4.1 V IOH = -1 mA, VDD = 4.5V
Low Level Output Voltage VOL ——0.4VI
OL = 1 mA, VDD = 4.5V
Input Leakage Current ILI -10 10 µA VIN = VSS or VDD
Output Lea ka ge Cu rren t ILO -10 10 µA VOUT = VSS or VDD
Pin Capacitance
(all inputs/ou tpu t s) CIN, COUT 10 pF VDD = 5.0V (Note 1)
TAMB = 25°C, f = 1 MHz
Timing Parameters:
Clock Frequency fCLK ——2.8
1.05 MHz
MHz VDD = 5V (Note 3)
VDD = 2.7V (Note 3)
Clock High Time tHI 160 ns
Clock Low Time tLO 160 ns
CS Fall To First Rising CLK Edge tSUCS 100 ns
CLK Fall To Output Data Valid tDO 125
200 ns
ns VDD = 5V, See Figure 1-2
VDD = 2.7, See Figure 1-2
CLK Fall To Output Enable tEN 125
200 ns
ns VDD = 5V, See Figure 1-2
VDD = 2.7, See Figure 1-2
CS Rise To Output Disable tDIS 100 ns See test circuits, Figure 1- 2
(Note 1)
CS Disable Time tCSH 350 ns
DOUT Rise Time tR 100 ns See t est circu i ts, Figure 1-2
(Note 1)
DOUT Fall Ti me tF 100 ns See test circuits, Figure 1-2
(Note 1)
All pa rameter s ap ply at VDD = 5V, VSS = 0V, VREF = 5V, TAMB = -40°C to +85°C, fSAMPLE = 200 ksp s an d fCLK = 14*fSAMPLE,
unless otherwise noted. Typical values apply for VDD = 5V, TAMB =25°C, unless otherwise noted.
Parameter Sym Min Typ Max Units Conditions
Note 1: This parameter is guaranteed by characterization and not 100% tested.
2: See graph that relates linearity performance to VREF level.
3: Because the sample cap will eventually lose charge, clock rates below 10 kHz can affect linearity perfor-
mance, especially at elevated temperatures.
MCP3001
DS21293C-page 4 © 2007 Microchip Technology Inc.
FIGURE 1-1: Serial Timing.
Power Requireme nts:
Operati ng Volt age VDD 2.7 5.5 V
Operati ng Curren t IDD —400
210 500 µA
µA VDD = 5.0V, DOUT unloaded
VDD = 2.7V, DOUT unloaded
Standby Current IDDS —0.005 2 µACS = VDD = 5.0V
All pa rameter s ap ply at VDD = 5V, VSS = 0V, VREF = 5V, TAMB = -40°C to +85°C, fSAMPLE = 200 ksp s an d fCLK = 14*fSAMPLE,
unless otherwise noted. Typical values apply for VDD = 5V, TAMB =25°C, unless otherwise noted.
Parameter Sym Min Typ Max Units Conditions
Note 1: This parameter is guaranteed by characterization and not 100% tested.
2: See graph that relates linearity performance to VREF level.
3: Because the sample cap will eventually lose charge, clock rates below 10 kHz can affect linearity perfor-
mance, especially at elevated temperatures.
CS
CLK
tSUCS
tCSH
tHI tLO
DOUT
tEN tDO tRtF
LSB
MSB OUT
tDIS
Null BIT
HI-Z HI-Z
© 2007 Microchip Technology Inc. DS21293C-page 5
MCP3001
FIGURE 1-2: Test Circuits.
VIH
tDIS
CS
DOUT
Waveform 1*
DOUT
Waveform 2
90%
10%
* Waveform 1 is for an output with internal condi-
tions such that the output is high, unless disabled
by the output control.
Waveform 2 is for an output with internal condi-
tions such that the outp ut is low, unless disabled
by the output control.
Voltage Waveforms for tDIS
Test Point
1.4V
DOUT
Load circuit for tR, tF, tDO
3kΩ
CL = 30 pF
Test Point
DOUT
Load circuit for tDIS and tEN
3kΩ
30 pF
tDIS Waveform 2
tDIS Waveform 1
CS
CLK
DOUT
tEN
12
B9
Voltage Waveforms for tEN
tEN Waveform
VDD
VDD/2
VSS
34
DOUT
tR
Vo ltage Waveforms for tR, tF
CLK
DOUT
tDO
Vo ltage Waveforms for tDO
tF
VOH
VOL
MCP3001
DS21293C-page 6 © 2007 Microchip Technology Inc.
2.0 TYPICAL PERFORMANCE CHARACTERISTICS
Note: Unless otherwise indicated, VDD = VREF = 5V, fSAMPLE = 200 ksps, fCLK = 14*Sample Rate, TA = 25°C
FIGURE 2-1: Integral Nonlinearity (INL) vs. Sample
Rate.
FIGURE 2-2: Integral Nonlinearity (INL) vs. VREF.
FIGURE 2-3: Integral Nonlinearity (INL) vs. Code
(Representative Part).
FIGURE 2-4: Integral Nonlinearity (INL) vs. Sample
Rate (VDD = 2.7V).
FIGURE 2-5: Integral Nonlinearity (INL) vs. VREF
(VDD = 2.7V).
FIGURE 2-6: Integral Nonlinearity (INL) vs. Code
(Representative Part, VDD = 2.7V).
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0 25 50 75 100 125 150 175 200 225 250
Sample Rate (ksps)
INL (LSB)
Positive INL
Negati ve INL
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
0123456
VREF (V)
INL (LSB)
Positive INL
Negat i ve INL
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
0 128 256 384 512 640 768 896 1024
Di g ita l Code
INL (LSB)
VDD = VREF = 5V
fSAMPLE = 200 ksps
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0 25 50 75 100
Sample Rate (ksps)
INL (LSB)
Positive INL
Negat ive INL
V
DD = VREF = 2.7V
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VREF (V)
INL (LSB)
Positive INL
Negat ive INL
VDD = VREF= 2.7V
fSAMPLE = 75 k sps
-0.50
-0.40
-0.30
-0.20
-0.10
0.00
0.10
0.20
0.30
0.40
0.50
0 128 256 384 512 640 768 896 1024
Di gita l Code
INL (LSB)
VDD = VREF = 2.7V
fSAMPLE = 75 ksps
© 2007 Microchip Technology Inc. DS21293C-page 7
MCP3001
Note: Unless otherwise indicated, VDD = VREF = 5V, fSAMPLE = 200 ksps, fCLK = 14*Sample Rate,TA = 25°C
FIGURE 2-7: Integral Nonlinearity (INL) vs.
Temperature.
FIGURE 2-8: Differential Nonlinearity (DNL) vs.
Sample Rate.
FIGURE 2-9: Differential Nonlinearity (DNL) vs.
VREF.
FIGURE 2-10: Integral Nonlinearity (INL) vs.
Temperature (VDD = 2.7V).
FIGURE 2-11: Differential Nonlinearity (DNL) vs.
Sample Rate (VDD = 2.7V) .
FIGURE 2-12: Differe ntia l N onl in eari ty (DN L) vs . VREF
(VDD = 2.7V).
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
-50 -25 0 25 50 75 100
Temper atur e (°C)
INL (LSB)
Positive INL
Negat i ve INL
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0 25 50 75 100 125 150 175 200 225 250
Sample Rate (ksps)
DNL (LSB)
Positive DNL
Nega ti ve DNL
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
012345
VREF (V)
DNL (LSB)
Negat i ve DNL
Positive DNL
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
-50-250 255075100
Tem per a t ure (°C)
INL (LSB)
Positive INL
VDD = VREF = 2.7V
fSAMPLE = 75 ksps
Negative INL
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0 25 50 75 100
Sample Rate (ksps)
DNL (LSB)
Positive DNL
Negati ve DNL
VDD = VREF = 2.7V
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VREF(V)
DNL (LSB)
P ositive DNL
Nega t i v e DNL
VDD = VREF = 2. 7V
fSAMPLE = 75 k s ps
MCP3001
DS21293C-page 8 © 2007 Microchip Technology Inc.
Note: Unless otherwise indicated, VDD = VREF = 5V, fSAMPLE = 200 ksps, fCLK = 14*Sample Rate,TA = 25°C
FIGURE 2-13: Differential Nonlinearity (DNL) vs.
Code (Representative Part).
FIGURE 2-14: Differential Nonlinearity (DNL) vs.
Temperature.
FIGURE 2-15: Gain Error vs. VREF.
FIGURE 2-16: Differential Nonlinearity (DNL) vs.
Code (Representat ive Part, VDD = 2.7V).
FIGURE 2-17: Differential Nonlinearity (DNL) vs.
Temperature (VDD = 2.7V).
FIGURE 2-18: Offset Error vs. VREF.
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
0 128 256 384 512 640 768 896 1024
Digi t al Code
DNL (LSB)
VDD = VREF = 5V
fSAMPLE = 200 k sps
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
-50 -25 0 25 50 75 100
Tem pe r a t ur e ( ° C)
DNL (LSB)
Positive DNL
Negati ve DNL
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
012345
VREF(V)
Gain Error (LSB)
VDD = 2.7V
fSAMPLE = 75 ksps
VDD = 5V
fSAMPLE = 200 ksps
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
0 128 256 384 512 640 768 896 1024
Di gital Code
DNL (LSB)
VDD = VREF = 2.7V
fSAMPLE = 75 k sps
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
-50 -25 0 25 50 75 100
Temper at ure ( ° C)
DNL (LSB)
Po sitive DNL
VDD = VREF = 2.7V
fSAMPLE = 75 ksps
Negat i ve DNL
0
1
2
3
4
5
6
7
8
0.0 1.0 2.0 3.0 4.0 5.0
VREF (V)
Offset Error (LSB)
VDD = 5V
fSAMPLE = 200 ksps
VDD = 2. 7V
fSAMPLE = 75 ksps
© 2007 Microchip Technology Inc. DS21293C-page 9
MCP3001
Note: Unless otherwise indicated, VDD = VREF = 5V, fSAMPLE = 200 ksps, fCLK = 14*Sample Rate,TA = 25°C
FIGURE 2-19: Gain Error vs. Temperature.
FIGURE 2-20: Signal to Noise Ratio (SNR) vs. Input
Frequency.
FIGURE 2-21: Total Harmonic Distortion (THD) vs.
Input Frequency.
FIGURE 2-22: Offset Error vs. Temperature.
FIGURE 2-23: Signal to Noise Ratio and Distortion
(SINAD) vs. Input Freq uen cy.
FIGURE 2-24: Signal to Noise and Distortion
(SINAD) vs. Input Sign al Level .
-0.4
-0.3
-0.2
-0.1
0.0
0.1
-50 -25 0 25 50 75 100
Temperat ur e ( °C)
Gain Error (LSB)
VDD = VREF = 5V
fSAMPLE = 200 ksps
VDD = VREF = 2. 7V
fSAMPLE = 75 k s ps
0
10
20
30
40
50
60
70
1 10 100
Input Frequency ( kHz)
SNR (dB)
VDD = VREF = 2. 7V
fSAMPLE = 75 ksps
VDD = VREF = 5V
fSAMPLE = 200 ksps
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
110100
I nput Frequency (kHz)
THD (dB)
VDD = VREF = 5V
fSAMPLE = 200 k sps
VDD = VREF = 2. 7V
fSAMPLE = 75 k sps
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-50 -25 0 25 50 75 100
Temp erat u re ( ° C)
Offset Error (LSB)
VDD = VREF = 5V
f
SAMPLE
= 200 ksps
VDD = VREF = 2.7V
fSAMPLE = 75 ksps
0
10
20
30
40
50
60
70
1 10 100
I nput Frequency ( k Hz)
SINAD (dB)
VDD = VREF = 2.7V
fSAMPLE = 75 ksps VDD = VREF = 5V
fSAMPLE = 200 k sps
0
10
20
30
40
50
60
70
80
-40 -35 -30 -25 -20 -15 -10 -5 0
I nput Signal Level ( dB)
SINAD (dB)
VDD = VREF = 2.7V
fSAMPLE = 75 ks ps
VDD = VREF = 5V
fSAMPLE = 20 0 ks ps
MCP3001
DS21293C-page 10 © 2007 Microchip Technology Inc.
Note: Unless otherwise indicated, VDD = VREF = 5V, fSAMPLE = 200 ksps, fCLK = 14*Sample Rate,TA = 25°C
FIGURE 2-25: Effective Number of Bits (ENOB) vs.
VREF.
FIGURE 2-26: Spurious Free Dynamic Range
(SFDR) vs. Input Frequency.
FIGURE 2-27: Frequency Spectrum of 10 kHz Input
(Representative Part).
FIGURE 2-28: Effective Number of Bits (ENOB) vs.
Input Frequency.
FIGURE 2-29: Power Supply Rejection (PSR) vs.
Ripple Frequency.
FIGURE 2-30: Frequency Spectrum of 1 kHz Input
(Representative Part, VDD = 2.7V).
9.0
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
10.0
0.0 1.0 2.0 3.0 4.0 5.0
VREF (V)
ENOB (rms)
VDD = VREF = 2.7V
fSAMPLE = 75 ksps
VDD = VREF = 5V
fSAMPLE = 200 ks ps
0
10
20
30
40
50
60
70
80
90
100
110100
I nput Frequenc y ( k Hz)
SFDR (dB)
VDD = VREF = 5V
fSAMPLE = 200 ksps
VDD = VREF = 2.7V
fSAMPLE = 75 ksps
-130
-120
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0 20000 40000 60000 80000 100000
Freque ncy ( Hz)
Amplitude (dB)
VDD = VREF = 5V
fSAMPLE = 20 0 k sps
fINPUT = 10. 0097 k Hz
4096 poi n ts
8.0
8.2
8.4
8.6
8.8
9.0
9.2
9.4
9.6
9.8
10.0
1 10 100
I nput Frequency (k Hz)
ENOB (rms)
VDD = VREF = 2.7V
fSAMPLE = 75 ksps
VDD = VREF = 5V
fSAMPLE = 200 k sps
-80
-70
-60
-50
-40
-30
-20
-10
0
1 10 100 1000 10000
Ripple Fre quency ( kHz)
Power Supply Rejection (dB)
VDD = VREF = 5V
fSAMPLE = 200 ks ps
-130
-120
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0 5000 10000 15000 20000 25000 30000 35000
Fr equency (Hz)
Amplitude (dB)
VDD = VREF = 2. 7V
fSAMPLE = 75 ksps
fINPUT = 1.00708 kHz
4096 poi nts
© 2007 Microchip Technology Inc. DS21293C-page 11
MCP3001
Note: Unless otherwise indicated, VDD = VREF = 5V, fSAMPLE = 200 ksps, fCLK = 14*Sample Rate,TA = 2 C
FIGURE 2-31: IDD vs. VDD.
FIGURE 2-32: IDD vs. Clock Frequency.
FIGURE 2-33: IDD vs. Temperature.
FIGURE 2-34: IREF vs. VDD.
FIGURE 2-35: IREF vs. Clock Frequency.
FIGURE 2-36: IREF vs. Temperature.
0
50
100
150
200
250
300
350
400
450
500
2.02.53.03.54.04.55.05.56.0
VDD (V)
IDDA)
VREF = VDD
All poi nts at fCLK = 2.8 MHz except
at V REF = VDD = 2. 5V, fCLK
=1.05 M Hz
0
50
100
150
200
250
300
350
400
450
500
10 100 1000 10000
Clock Frequency (kHz)
IDD (µA)
VDD = VREF = 5V
VDD = VREF = 2.7V
0
50
100
150
200
250
300
350
400
450
500
550
600
-50 -25 0 25 50 75 100
Tem per ature ( °C)
IDDA)
VDD = VREF = 5V
fCLK = 2.8 M Hz
VDD = VREF = 2.7V
fCLK = 1. 05 M Hz
0
10
20
30
40
50
60
70
80
90
100
110
120
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VDD (V)
IREF (µA)
VREF = VDD
A ll points at fCLK = 2. 8 M Hz ex c e pt
at VREF = VDD = 2. 5V, fCLK
= 1.05 MHz
0
10
20
30
40
50
60
70
80
90
100
110
120
10 100 1000 10000
Clock Frequency (kHz)
IREF
A)
VDD = VREF = 5V
VDD = VREF = 2.7V
0
10
20
30
40
50
60
70
80
90
100
110
120
-50-250 255075100
Tem p er a ture (°C)
IREF
(µA)
VDD = VREF = 5V
fCLK = 2.8 M Hz
VDD = VREF = 2. 7V
fCLK = 1.05 MHz
MCP3001
DS21293C-page 12 © 2007 Microchip Technology Inc.
Note: Unless otherwise indicated, VDD = VREF = 5V, fSAMPLE = 200 ksps, fCLK = 14*Sample Rate,TA = 25 °C
FIGURE 2-37: IDDS vs. VDD.
FIGURE 2-38: IDDS vs. Temperature.
FIGURE 2-39: Analog Input Leakage Current vs.
Temperature.
0
10
20
30
40
50
60
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VDD (V)
IDDS (pA)
VREF = CS = VDD
0.01
0.10
1.00
10.00
100.00
-50 -25 0 25 50 75 100
Temperature ( ° C)
IDDS (nA)
VDD = VREF = CS = 5V
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50-25 0 255075100
Temperature ( °C)
Analog Input Leakage (nA)
VDD = VREF = 5V
© 2007 Microchip Technology Inc. DS21293C-page 13
MCP3001
3.0 PIN DESCRIPTIONS
3.1 IN+
Positive analog input. This input can vary from IN- to
VREF + IN-.
3.2 IN-
Negative analog input. This input can vary ±100 mV
from VSS.
3.3 CS/SHDN(Chip Select/Shutdown)
The CS/SHDN pin is used to initiate communication
with the device when pulled low and will end a conver-
sion and put the device in low power standby when
pulled high. The CS/SHDN pin must be pulled high
between conversions.
3.4 CLK (Serial Clock)
The SPI c lock pi n is used to initi ate a co nversion and to
clock out each bit of the conversion as it takes place.
See S ection 6.2 for constraints on cloc k speed.
3.5 DOUT (Serial Data output)
The SPI serial data output pin is used to shift out the
results of the A/D conversion. Data will always change
on the falling edge of each clock as the conversion
takes place.
4.0 DEVICE OPERATION
The MCP3001 A/D converter employs a conventional
SAR architecture. With this architecture, a sample is
acquired on an internal sample/hold capacitor for
1.5 clock cycles starting on the first rising edge of the
serial clock after CS has been pulled low . Following this
sample time, the input switch of the converter opens
and the device uses the collected charge on the inter-
nal sample and hold capacitor to produce a serial 10-bit
digital output code. Conversion rates of 200 ksps are
possible on the MCP3001. See Section 6.2 for informa-
tion on minimum clock rates. Communication with the
device is done using a 3-wire SPI-comp atible i nterface.
4.1 Analog Inputs
The MCP3001 provides a single pseudo-differential
input. The IN+ input can range from IN- to (VREF +IN-).
The IN- input is limited to ±100 mV from the VSS rail.
The IN- input can be used to cancel small signal com-
mon-mode noise which is present on both the IN+ and
IN- inputs .
For the A/D Converter to m eet specifi cation, the charg e
holdi ng capa citor, CSAMPLE must be given enough time
to acquire a 10-bit accurate voltage level during the
1.5 clock cycle sampling period. The analog input
model is shown in Figure 4-1.
In this diagram, it is shown that the source impedance
(RS) adds to the intern al sam pli ng swi tch , (RSS) impe d-
ance, directly affecting the time that is required to
charge the capacitor, CSAMPLE. Consequently, a larger
source impedance increases the offset, gain, and inte-
gral linearity errors of the conversion.
Ideally, the impedance of the signal source should be
near zero. Th is is achievab le with an operat ional ampli-
fier such as t he M CP601 , w hic h h as a clo se d lo op ou t-
put imped anc e of tens of ohm s. The ad verse af fe cts of
higher source impedances are shown in Figure 4-2.
If the voltage level of IN+ is equal to or less than IN-, th e
result ant code will be 000h. If the voltage at IN+ is e qual
to or greater than {[VREF + (IN-)] - 1 LSB}, then the out-
put cod e wi ll be 3FFh. If the volt age level at IN - is more
than 1 LSB below VSS, then the volt age l evel at the IN+
input will have to go below VSS to see the 000h output
code. C onve rsely, if IN- i s mor e than 1 LSB a bove Vss,
then the 3FFh code will not be seen unless the IN+
input level goes above VREF level.
4.2 Reference Input
The refer ence input (VREF) determi nes the an alog inp ut
voltage range and the LSB size, as shown below.
As the reference input is reduced, the LSB size is
reduced accordin gly . The theoreti cal digital output code
produ ced by the A/D Converter is a functi on of the ana-
log input signal and the reference input as shown
below.
where:
VIN = analog input voltage = V(IN+) - V(IN-)
VREF = reference voltage
When using an external voltage reference device, the
system designer should always refer to the manufac-
turer’s recom mendations for circ uit layo ut. Any in stabi l-
ity in the operation of the reference device will have a
direct effect on the operation of the ADC.
LSB Size VREF
1024
-------------=
Digital Output Code 1024*VIN
VREF
------------------------=
MCP3001
DS21293C-page 14 © 2007 Microchip Technology Inc.
FIGURE 4-1: Analog Input Model.
FIGURE 4-2: Maximum Clock Frequency vs. Input
Resistance (RS) to maintain less than a 0.1LSB
deviati on in IN L from nom in al con di tion s.
CPIN
VA
RSS CHx
7pF
VT = 0.6V
VT = 0.6V ILEAKAGE
Sampling
Switch
SS RS = 1 kΩ
CSAMPLE
= DAC capacitance
VSS
VDD
= 20 pF
±1 nA
Legend
VA = sig na l s o urce
RSS = source impedance
CHx = input channel pad
CPIN = input pin capacitance
VT= thresho ld voltage
ILEAKAGE = leakage current at the pin
due to various junctions
SS = sampling switch
RS= sampling switch resistor
CSAMPLE = sample/hold capacitance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
100 1000 10000
Input Resist ance (O hms)
Clock Frequency (MHz)
VDD = VREF = 5V
fSAMPLE = 200 ks ps
VDD = VREF = 2.7V
fSAMPLE = 75 ks ps
© 2007 Microchip Technology Inc. DS21293C-page 15
MCP3001
5.0 SERIAL COMMUNICATIONS
Communication with the device is done using a stan-
dard SPI compatible serial interface. Initiating commu-
nication with the MCP3001 begins with the CS going
low. If the device was powered up with the CS pin low,
it mus t be b rought hig h and bac k low to initia te comm u-
nication. The device will begin to sample the analog
input on the first rising edge after CS goes low. The
sample period wil l end i n the fa lling e dge of the se cond
clock , at which time th e devic e will o utput a low nul l bit.
The next 10 clocks will output the result of the conver-
sion with MSB first, as shown in Figure 5-1. Data is
always out put from the device on the falling edg e of the
clock. If all 10 data bits have been transmitted and the
device contin ues to rec eive cl ocks whi le the CS is held
low, the device will output the conversion result LSB
first, as shown in Figure 5-2. If more clocks are pro-
vided to th e devi ce whi le C S is still low (after the LSB
first data has been transmitted), the device will clock
out zeros indefinitely.
If it is desired, the CS can be raised to end the co nv er-
sion period at any time during the transmission. Faster
conversion rates can be obtained by using this tech-
nique if not all the bits are captured before starting a
new c ycle. Some syste m des igners use this met hod b y
capturing only the highest order 8 bits and ‘throwing
away’ the lower 2 bits.
FIGURE 5-1: Communication with MCP3001 (MSB first Format).
FIGURE 5-2: Communication with MCP3001 (LSB first Format).
CS
CLK
DOUT
tCYC
Power
Down
tSUCS
tSAMPLE tCONV tDATA**
* After completing the data transfer , if further clocks are applied with CS low , the ADC will output LSB first data,
followed by zeros indefinitely. See Figure below.
** tDATA: during this time, the bias current and the comparator powers down and the reference input becomes a
high impedance node.
tCSH
B9 B8 B7 B6 B5 B4 B3 B2 B1 B0*
HI-Z HI-Z NULL
BIT B9 B8 B7 B6
NULL
BIT
CS
CLK
DOUT
tCYC
Power Down
tSUCS
tSAMPLE tCONV tDATA**
* After completing the data transfer, if further clocks are applied with CS low, the ADC will output zeros indefi-
nitely.
** tDATA: during this time, the bias current and the comparator powers down and the reference input becomes a
high impedance node leaving the CLK running to clock out the LSB-first data or zeros.
tCSH
NULL
BIT B9 B8 B7 B6 B5 B4 B3 B2 B1 B0
HI-Z B1 B2 B3 B4 B5 B6 B7 B8 B9 HI-Z
MCP3001
DS21293C-page 16 © 2007 Microchip Technology Inc.
6.0 APPLICATIONS INFORMATION
6.1 Using the MCP3001 with
Microcontroller SPI Ports
With most microcontroller SPI ports, it is required to
clock out e ight b its at a time. If this i s the case , it will be
necessary to provide more clocks than are required for
the MCP3001. As an example, Figure 6-1 and
Figure 6-2 show how the MCP3001 can be interfaced
to a mi cro con trol le r w ith a st a nda rd SPI port. Si nc e th e
MCP30 01 alway s cl ocks dat a out o n t he fall ing ed ge of
clock, the MCU SPI port must be configured to match
this operation. SPI Mode 0,0 (clock idles low) and SPI
Mode 1,1 (clock idles high) are both compatible with
the MCP3001. Figure 6-1 depicts the operation shown
in SPI Mode 0,0, which requires that the CLK from the
microcontroller idles in the ‘low’ state. As shown in the
diagram , the MSB is clocked out of the ADC on the fal l-
ing edge of the third clock pulse. After the first eight
clocks have been sent to the device, the microcontrol-
ler’s receive buffer will contain two unknown bits (the
output is at high im pedance fo r the first two cloc ks), the
null bi t and the h ighest o rder five b its of the conv ersion.
After the second eight clocks have been sent to the
device , the MCU re ceive regist er will conta in the lowes t
order five bits and the B1-B4 bi t s re pea ted as the ADC
has begun to shift out LSB first data with the extra
clocks. Typical procedure would then call for the lower
order byte of data to be shifted right by three bits to
remove the extra B1-B4 bits. The B9-B5 bits are then
rotated 3 bits to the right with B7-B5 rotating from the
high ord er byte to th e low e r ord er byt e. Easier ma nip u-
lation of the converted data can be obtained by using
this method.
Figure 6-2 shows SPI Mode 1,1 communication which
requires that the clock idles in the high state. As with
mode 0,0, the ADC outputs data on the falling edge of
the cloc k and the MCU latc hes data from the ADC in on
the rising edge of the clock.
FIGURE 6-1: SPI Communic ati on with the MC P3 001 using 8-bit segments (Mode 0,0: SCLK idles low).
FIGURE 6-2: SPI Communication with the MCP3001 using 8-bit segments (Mode 1,1: SCLK idles high).
CS
CLK 910111213141516
DOUT NULL
BIT B9 B8 B7 B6 B5 B4 B3 B2 B1 B0 B1 B2
HI-Z
B5 B4 B3 B2 B1 B0 B1 B2B9 B8 B7 B6??0
MCU latches data from ADC
Data is clocked out of
ADC on falling edges
on rising edges of SCLK
12345678
HI-Z
B3
B3
LSB first data begins
to come out
B4
Data stored into MCU receive register
after transmission of first 8 bits Data stored i nto M CU receive r egister
after transmission of second 8 bits
CS
CLK 910111213141516
DOUT NULL
BIT B9 B8 B7 B6 B5 B4 B3 B2 B1 B0 B1 B2
HI-Z
B5 B4 B3 B2 B1 B0 B1 B2
B9 B8 B7 B6??0
MCU latches data from ADC
Data is clocked out of
ADC on falling edges
on rising edges of SCLK
1234567 8
B3
B3
LSB first data begins
to come out
HI-Z
Data stored i nto M CU receive r egister
after transmission of first 8 bits Data stored into MCU receive register
after transmission of second 8 bits
© 2007 Microchip Technology Inc. DS21293C-page 17
MCP3001
6.2 Maintaining Minimum Clock Speed
When the MCP300 1 initiates the samp le period, charge
is stored on the sample capacitor. When the sample
period is comple te, the device co nverts one bi t for each
clock tha t is rec eived. It is import ant for th e user to note
that a slow clock rate will allow charge to bleed off the
sample cap while the conversion is taking place. At
85°C (worst case condition), the part will maintain
proper charge on the sample cap for 700 µs at
VDD = 2.7V and 1.5 ms at VDD = 5V. This means that at
VDD = 2.7V, the time it takes to transmit the first 14
clock s must not exce ed 700 µs. Failu re to mee t this c ri-
terion may induce linearity errors into the conversion
outside the rated specifications.
6.3 Buffering/Filtering the Analog Inputs
If the s ignal sourc e for th e ADC i s not a low i mped ance
source, it wi ll hav e to be bu ffe red or i naccu rate co nver-
sion results may occur. See Figure 4-2. It is also rec-
ommen ded that a filte r be us ed to e liminate any sig nals
that may be aliased back into the conversion results.
This is illustrated in Figure 6-3 where an op amp is
used to drive, filter and gain the analog input of the
MCP3001. This amplifier provides a low impedance
source for the converter input and a low pass filter,
which eliminates unwanted high frequency noise.
Low pass (anti-aliasing) filters can be designed using
Microchip’s interactive FilterLab software. FilterLab
will calculate capacitor and resistor values, as well as
determi ne the numbe r of po les th at are require d for th e
application. For more information on filtering signals,
see the application note AN699 “Anti-Aliasing Analog
Filters for Data Acquisition Systems.”
FIGURE 6-3: The MCP601 operational amplifier is
used to implement a 2nd order anti-aliasing filter for
the signal being converted by the MCP3001.
6.4 Layout Considerations
When laying out a printed circuit board for use with
analog components, care should be taken to reduce
noise wherever possible. A bypass capacitor should
alwa ys b e us ed wi th t his devi ce a nd shoul d be pl aced
as clos e as possi ble to the device p in. A byp ass ca pac-
itor value of 1 µF is recommended.
Digit al and analog t races should be sep arated as much
as possible on the board and no traces should run
underneath the device or the bypass capacitor. Extra
precautions should be taken to keep traces with high
frequenc y s ign al s (s uch as clo ck lines) as far as possi-
ble from analog traces.
Use of an analog ground plane is recommended in
order to keep the ground potential the same for all
devices on the board. Providing VDD connections to
devices in a “star” configuration can also reduce noise
by eliminating current return paths and associated
errors. See Figure 6-4. For more information on layout
tips when using ADC, refer to AN-688 “Layout Tips for
12-Bit A/D Converter Applications.
FIGURE 6-4: VDD traces arranged in a ‘Star’
configuration in order to reduce errors caused by
current return paths.
MCP3001
VDD
10 µF
IN-
IN+
-
+
VIN
C1
C2
VREF
4.096V
Reference
F
10 µF
0.1 µF
MCP601
R1
R2
R3R4
MCP1541 CL
VDD
Connection
Device 1
Device 2
Device 3
Device 4
MCP3001
DS21293C-page 18 © 2007 Microchip Technology Inc.
7.0 PACKAGING INFORMATION
7.1 Package Marking Information
Legend: XX...X Cus tom er-s pec if ic inf orm atio n
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the event the full Mic rochi p pa rt number can not be ma rked on on e line, it wi
ll
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
XXXXXXXX
XXXXXNNN
YYWW
8-Lead PDIP (300 mil) Example:
8-Lead SOIC (150 mil) Example:
XXXXXXXX
XXXXYYWW
NNN
8-Lead TSSOP Example:
MCP3001
I/PNNN
0736
MCP3001
NNN
8-Lead MSOP Example:
XXXX
YYWW
NNN
XXXXXX
YWWNNN
3001
0716
NNN
3001I
725NNN
3
e
ISN 0736
3
e
3
e
3
e
© 2007 Microchip Technology Inc. DS21293C-page 19
MCP3001
8-Lead Plastic Dual In-Line (P) – 300 mil Body [PDIP]
N
otes:
1
. Pin 1 visual index feature may vary, but must be located with the hatched area.
2
. § Significant Characteristic.
3
. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" per side.
4
. Dimens ioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units INCHES
Dimension Limits MIN NOM MAX
Number of Pins N 8
Pitch e .100 BSC
Top to Seating Plane A .210
Molded Package Thickness A2 .115 .130 .195
Base to Seating Plane A 1 .015
Shoulder to Shoulder Width E .290 .310 .325
Molded Package Width E1 .240 .250 .280
Overall Length D .348 .365 .400
Tip to Seating Plane L .115 . 130 .150
Lead Thickness c .008 .010 .015
Upper Lead Width b1 .040 .060 .070
Lower Lead Width b .014 .018 .022
Overall Row Spacing § eB .430
N
E1
NOTE 1
D
12
3
A
A1
A2
L
b1
b
e
E
eB
c
Microchip Technology Drawing C04-018
B
MCP3001
DS21293C-page 20 © 2007 Microchip Technology Inc.
8-Lead Plastic Small Outline (SN) – Narrow, 3.90 mm Body [SOIC]
N
otes:
1
. Pin 1 visual index feature may vary, but must be located within the hatched area.
2
. § Significant Characteristic.
3
. Dimens ions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15 mm per side.
4
. Dimens ioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units MILLMETERS
Dimension Limits MIN NOM MAX
Number of Pins N 8
Pitch e 1.27 BSC
Overall Height A 1.75
Molded Package Thickness A2 1.25
Standoff §A1 0.10 0.25
Overall Width E 6.00 BSC
Molded Package Width E1 3.90 BSC
Overall Length D 4.90 BSC
Chamfer (optional) h 0.25 0.50
Foot Length L 0.40 1.27
Footprint L1 1.04 REF
Foot Angle φ
Lead Thickness c 0.17 0.25
Lead Width b 0.31 0.51
Mold Draft Angle Top α 15°
Mold Draft Angle Bottom β 15°
D
N
e
E
E1
NOTE 1
12 3
b
A
A1
A2
L
L1
c
h
h
φ
β
α
Microchip Technology Drawing C04-057
B
© 2007 Microchip Technology Inc. DS21293C-page 21
MCP3001
8-Lead Plastic Micro Small Outline Package (MS) [MSOP]
N
otes:
1
. Pin 1 visual index feature may vary, but must be located within the hatched area.
2
. Dimens ions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15 mm per side.
3
. Dimens ioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units MILLIMETERS
Dimension Limits MIN NOM MAX
Number of Pins N 8
Pitch e 0.65 BSC
Overall Height A 1.10
Molded Package Thickness A2 0.75 0.85 0.95
Standoff A1 0.00 0.15
Overall Width E 4.90 BSC
Molded Package Width E1 3.00 BSC
Overall Length D 3.00 BSC
Foot Length L 0.40 0 .60 0.80
Footprint L1 0.95 REF
Foot Angle φ
Lead Thickness c 0.08 0.23
Lead Width b 0.22 0.40
D
N
E
E1
NOTE 1
12
e
b
A
A1
A2
c
L1 L
φ
Microchip Technology Drawing C04-111
B
MCP3001
DS21293C-page 22 © 2007 Microchip Technology Inc.
8-Lead Plastic Thin Shri nk Small Outline (ST) – 4.4 mm Body [TSSOP]
N
otes:
1
. Pin 1 visual index feature may vary, but must be located within the hatched area.
2
. Dimens ions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15 mm per side.
3
. Dimens ioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units MILLIMETERS
Dimension Limits MIN NOM MAX
Number of Pins N 8
Pitch e 0.65 BSC
Overall Height A 1.20
Molded Package Thickness A2 0.80 1.00 1.05
Standoff A1 0.05 0.15
Overall Width E 6.40 BSC
Molded Package Width E1 4.30 4.40 4.50
Molded Package Length D 2.90 3.00 3.10
Foot Length L 0.45 0 .60 0.75
Footprint L1 1.00 REF
Foot Angle φ
Lead Thickness c 0.09 0.20
Lead Width b 0.19 0.30
D
N
E
E1
NOTE 1
12
b
e
c
A
A1
A2
L1 L
φ
Microchip Technology Drawing C04-086
B
© 2007 Microchip Technology Inc. DS21293C-page 23
MCP3001
APPENDIX A: REVISION HISTORY
Revision C (January 2007)
This revision includes updates to the packaging
diagrams.
DS21293C-page 24 © 2007 Microchip Technology Inc.
NOTES:
© 2007 Microchip Technology Inc. DS21293C-page25
MCP3001
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO. X/XX
PackageTemperature
Range
Device
Device: MCP3001: 10-Bit Serial A/D Converter
MCP3001T: 10-Bit Se ri al A/ D Con ver ter
(Tape and Reel) (SOIC and TSSOP only)
Temp er atu re Rang e: I = -40° C to +85°C
Package: P = Plastic DIP (300 mil Body), 8-lead
SN = Plastic SOIC (150 mil Body), 8-lead
MS = Plastic Micro Small Outline (MSOP), 8-lead
ST = Plastic TSSOP (4.4 mm), 8-lead
Examples:
a) MCP3001-I/P: Industrial Temperature,
PDIP package.
b) MCP3001-I/SN: Indus trial Temperature,
SOIC package.
c) MCP3001-I/ST: Industrial Temperature,
TSSOP package.
d) MCP3001-I/MS: In dustrial Temperature,
MSOP package.
MCP3001
DS21293C-page26 © 2007 Microchip Technology Inc.
NOTES:
© 2007 Microchip Technology Inc. DS21293C-page 27
Information contained in this publication regarding device
applications a nd the lik e is pro vid ed only fo r yo ur c onvenien ce
and may be supers eded by updates. It is y our resp o ns i bil it y to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
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OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
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suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
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dsPICDEM, dsPICDEM.net, dsPICworks, ECAN,
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© 2007, Microchip Technology Incorporated, Printed in the
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Printed on recycled paper.
Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.
Code protection is c onstantly evolving. We a t Microchip are commit ted to continuously improving the code protect ion f eatures of our
products. Attempts to break Microchip’ s code protection f eature may be a violati on of t he Digit al Millennium Copyright Act. If such act s
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
T empe, Arizona, Gresham, Oregon and Mountain View , California. The
Company’s quality system processes and procedures are for its PIC®
MCUs and dsPIC DSCs, KEELOQ® code hopping devices, Serial
EEPROMs, microperipherals, nonvolatile memory and analog
products. In addition, Microchip’s quality system for the design and
manufacture of development systems is ISO 9001:2000 certified.
DS21293C-page 28 © 2007 Microchip Technology Inc.
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12/08/06