CDIL BOXTIJ BOXTIK SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon transistors Marking PACKAGE OUTLINE DETAILS BCX71G = BG ALL DIMENSIONS IN mm BCX71H = BH BCX7]]J = BJ BCX71K = BK 3.0 2.8 0.48 0.14 0.38 | 0.69 . ils 0.50 Pin configuration a6 LY OO bo he ee a - WL . 2 = EMITTER 2.4 4 ; 3 = COLLECTOR 1 2 = 3 | 1.02 | 0.89 ) 0.60 2.00 0.40 1.80 2 ABSOLUTE MAXIMUM RATINGS Collector-emitter voltage (VBE = 0) -Vcgs max. 45 V Collector-emitter voltage (open base) -~VCEQ max. 45 V Collector current (d.c.) -I max. 200 mA Total power dissipation Ptot max. 250 mW Junction temperature T; max. 150 C Transition frequency at f = 100 MHz -Vck =5 V;-Ic =10 mA fr typ. 180 MHz Noise figure at f = 1 kHz -VcE = 5V;-Ic = 200pA F typ. 2 dB RATINGS (at Ta = 25C unless otherwise specified) Limiting values Collector-emitter voltage (VBE = 0) -VcEs max. 45 V Collector-emitter voltage (open base) -VcEo max. 45 V Emitter-base voltage (open collector) -VEBO max. 5 V 67 DIL BCX71G BCX71H BCX71J BCX71K Collector current (d.c.) -Ic max. 200 mA Base current ~lg max. 50 mA Total power dissipation up to Tamb = 25 C Prot max. 250 mW Storage temperature Tstg ~-55 to +150 C Junction temperature Tj max. 150 C THERMAL RESISTANCE From junction to ambient Rthj-a = 500 K/W CHARACTERISTICS Tamb = 25C unless otherwise specified Collector-emitter cut-off current Vep = 0; -Vcg = 45 V -ICES < 20 nA Vep = 0; -VcgE = 45 V; Tamb = 150 C -ICES < 20 pA Emitterbase cut-off current Ic = 0; -Vep =4 V -IgBo < 20 nA Saturation voltages -VcEsat 0,06 to 0,25 V -Ic = 10 mA; ~-Ip = 0,25 mA -VBEsat 0,6 to 0,85 V ~Ic = 50 mA; -Ip = 1,25 mA VGesat_ 0,12 to 055 V -VBEsat 0,68 to 1,05 V Transition frequency at f = 100 MHz - -VcE =5V;-Ic = 10mA fr typ. 180 MHz Collector capacitance at f = 1 MHz -Vcp = 10 V; Ig = Ie = 0 Ce typ. 4,5 pF Emitter capacitance at f = 1 MHz -Vep = 0,5 V; Ic =I. =0 Ce typ. 11 pF Noise figure at Rg = 2 kQ -VcgE = 5 V;-Ic = 200 2A; B = 200 Hz B typ. 2 dB < 6 dB BCX71G 71H 71J 71K D.C. current gain -VcE = 5 V;-Ic = 10pA hee > - 30 40 100 -Vcg =5V;-Ic=2mA HEE > 120| 180] 250] 380 < 220} 310} 460} 630 -VckE = 1V;-Ic = 50 mA hFE > 60 80 100; 110 Small-signal current gain ~Vce =5V;-Ilc =2mA;f=1kHz hfe > 125; 175 250} 350 < 250} 350; 500] 700 Output admittance -VcE =5V;-Ic=2mA;f=1kHz hoe typ. 18 24 30 50 pS Base-emitter voltage ~VcE =5V;-Ic=2mA VBE 0,6 to 0.75 Vv typ. 0,65 Vv -VcE =5 V;-Ic = 10 pA VBE typ. 0,55 Vv -VcE =1V;-Ic = 50 mA VBE typ. 0,72 Vv 68