Zowie Technology Corporation Switching Transistor NPN Silicon COLLECTOR 3 3 MMBT4401 BASE 1 1 2 2 EMITTER SOT-23 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 600 mAdc Symbol Max. Unit PD 225 1.8 mW mW / oC R JA 556 PD 300 2.4 R JA TJ,TSTG 417 -55 to +150 Rating Collector Current-Continuous THERMAL CHARACTERISTICS Characteristic (1) Total Device Dissipation FR-5 Board o Derate above 25 C o TA=25 C Thermal Resistance Junction to Ambient (2) Total Device Dissipation Alumina Substrate, o Derate above 25 C o TA=25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature o C/W mW mW / oC o C/W o C DEVICE MARKING MMBT4401=2X o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Symbol Min. Max. Unit Collector-Emitter Breakdowe Voltage ( IC=1.0mAdc, IB=0 ) V(BR)CEO 40 - Vdc Collector-Base Breakdowe Voltage ( IC=0.1 mAdc, IE=0 ) V(BR)CBO 60 - Vdc Emitter-Base Breakdowe Voltage ( IE=0.1 mAdc, IC=0 ) V(BR)EBO 6.0 - Vdc Base Cutoff Current ( VCE=35 Vdc, VEB=0.4 Vdc ) IBEV - 0.1 nAdc Collector Cutoff Current ( VCE=35 Vdc, VEB=0.4 Vdc ) ICEX - 0.1 nAdc Characteristic OFF CHARACTERISTICS (3) REV. : 0 Zowie Technology Corporation Zowie Technology Corporation o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued) Min. Max. 20 40 80 100 40 300 - VCE(sat) - 0.4 0.75 Vdc VBE(sat) 0.75 - 0.95 1.2 Vdc fT 250 - MHZ Collector-Base Capacitance ( VCB=5.0 Vdc, IE=0, f=1.0 MHZ ) Ccb - 6.5 pF Emitter-Base Capacitance ( VEB=0.5 Vdc, IC=0, f=1.0 MHZ ) Ceb - 30 pF Input Impedance ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) hie 1.0 15 k ohms Voltage Feedback Ratio ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) hre 0.1 8.0 X 10 Small-Signal Current Gain ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) hfe 40 500 - Output Admittance ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) hoe 1.0 30 u mhos ( VCC=30 Vdc, VBE=2.0 Vdc, IC=150 mAdc, IB1=15 mAdc ) td - 15 tr - 20 ( VCC=30 Vdc, IC=150 mAdc, IB1=IB2=15 mAdc ) ts - 225 tf - 30 Symbol Characteristic Unit ON CHARACTERISTICS(3) DC Current Gain ( IC=0.1 mAdc, VCE=1.0 Vdc ) ( IC=1.0 mAdc, VCE=1.0 Vdc ) ( IC=10 mAdc, VCE=1.0 Vdc ) ( IC=150 mAdc, VCE=1.0 Vdc ) ( IC=500 mAdc, VCE=2.0 Vdc ) HFE - (3) Collector-Emitter Saturation Voltage ( IC=150 mAdc, IB=15 mAdc ) ( IC=500 mAdc, IB=50 mAdc ) (3) Base-Emitter Saturation Voltage ( IC=150 mAdc, IB=15 mAdc ) ( IC=500 mAdc, IB=50 mAdc ) SMALL-SIGNAL CHARACTERISTIC Current-Gain-Bandwidth Product ( IC=20 mAdc, VCE=10 Vdc, f=100 MHZ ) -4 SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina. (3) Pulse Test : Pulse Width 300uS, Duty Cycle REV. : 0 nS nS 2.0%. Zowie Technology Corporation Zowie Technology Corporation MMBT4401 SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V 1.0 to 100 us, DUTY CYCLE = 2% +16 V +30 V 1.0 to 100 us, DUTY CYCLE = 2% 200 +16 V 200 1.0 k 1.0 k 0 -2.0 V 0 CS* < 10 pF* CS* < 10 pF* -14 V < 20 ns < 2.0 ns -4.0V Scope rise time < 4.0 ns * Total shunt capacitance of test jig and connectors Figure 1. Turn-On Time Figure 2. Turn-Off Time TRANSIENT CHARACTERISTICS 10 30 7.0 5.0 Q, CHARGE (pC) CAPACITANCE ( pF ) 20 Cobo 10 7.0 5.0 2.0 0.2 0.3 0.5 1.0 2.0 3.0 QT 1.0 0.7 0.3 0.2 3.0 5.0 10 REVERSE BIAS VOLTAGE ( VOLTS ) Figure 3. Capacitance REV. : 0 3.0 2.0 0.5 Ccb 0.1 VCC=30 V IC/IB=10 20 30 50 0.1 10 o TJ=25 C QA o TJ=100 C 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT ( mA ) Figure 4. Charge Data Zowie Technology Corporation Zowie Technology Corporation MMBT4401 TRANSIENT CHARACTERISTICS 100 100 70 70 IC/IB=10 50 tr @ VCC=30V tr @ VCC=10V tb @ VEB=2.0V td @ VEB=0V 30 20 t, TIME ( ns ) t, TIME ( ns ) 50 tr 30 20 10 10 7.0 7.0 5.0 5.0 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 5. Turn-On Time Figure 6. Rise and Fall Times 300 300 500 100 200 VCC=30 V IB1=IB2 70 tS4 = tS - 1/8tf IB1 = IB2 IC/IB = 10 to 20 tf, FALL TIME ( ns ) t's, STORAGE TIME ( ns ) VCC=30 V IC/IB=10 tr 100 70 50 IC/IB=20 30 IC/IB=10 20 10 50 7.0 5.0 30 10 20 30 50 70 100 200 300 500 10 20 30 IC, COLLECTOR CURRENT ( mA ) 50 70 100 200 300 500 IC, COLLECTOR CURRENT ( mA ) Figure 7. Storage Time Figure 8. Fall Time SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE o VCE=10 Vdc, TA=25 C Bandwidth=1.0HZ 8.0 10 IC=1.0mA, RS=150 IC=500uA, RS=200 IC=100uA, RS=2.0k IC=50uA, RS=4.0k RS=OPTIMUM SOURCE RESISTANCE NF, NOISE FIGURE ( bB ) NF, NOISE FIGURE ( bB ) 10 6.0 4.0 2.0 IC=50uA IC=100uA IC=500uA IC=1.0mA 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0 0.5 1.0 2.0 5.0 10 f, FREQUENCY (kHz) Figure 9.Frquency Effects REV. : 0 f = 1.0 kHz 8.0 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k10 k 20 k 50 k100 k RS, SOURCE RESISTANCE ( OHMS ) Figure 10.Source Resistance Effects Zowie Technology Corporation Zowie Technology Corporation MMBT4401 h PARAMETERS o VCE = 10 Vdc, f = 1.0 kHZ, TA = 25 C This group of graphs illustrates the relationship between hfe and and other " h " parameters for this series of transistors. To obtain these curves, a high-gain and a low-gain unit were selected from the MMBT4401LT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. 50k hfe, CURRENT GAIN 200 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 100 70 50 30 hie, INPUT IMPEDANCE (OHMS) 300 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0k 2.0k 1.0k 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 11. Current Gain Figure 12. Input Impedance 10 5.0 7.0 10 100 hoe, OUTPUT ADMITTANCE(umhos) -4 hre, VOLTAGE FEEDBACK RATIO (X 10 ) 10k 500 0.1 7.0 5.0 3.0 2.0 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 1.0 0.7 0.5 0.3 0.2 50 MMBT4401LT1 UNIT 1 20 MMBT4401LT1 UNIT 2 10 5.0 2.0 1.0 0.1 REV. : 0 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 20k 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance 5.0 7.0 10 Zowie Technology Corporation Zowie Technology Corporation MMBT4401 STATIC CHARACTERISTICS hFE, NORMALIZED CURRENT GAIN 3.0 VCE=1.0V 2.0 VCE=10V o TJ=125 C 1.0 o TJ=25 C 0.7 o TJ= -55 C 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT ( mA ) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 o TJ= 25 C 0.8 IC = 1.0mA IC = 10mA IC = 100mA IC = 500mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 100 200 500 IB, BASE CURRENT ( mA ) Figure 16. Collector Saturation Region 1.0 +0.5 o TJ= 25 C VBE(SAT) @ IC/IB = 10 0 VC for VCE(sat) VOLTAGE ( VOLTS ) o COEFFICIENTS (mV / C) 0.8 0.6 VBE @ VCE = 10 V 0.4 0.2 -1.0 -1.5 VB for -2.0 VCE(SAT) @ IC/IB = 10 0 VBE -2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT ( mA ) Figure 17. " ON " Voltage REV. : 0 -0.5 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT ( mA ) Figure 18. Temperature Coefficients Zowie Technology Corporation