© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 9
1Publication Order Number:
2N6107/D
PNP - 2N6107, 2N6109,
2N6111; NPN - 2N6288,
2N6292
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and
switching applications.
Features
•DC Current Gain Specified to 7.0 Amperes
hFE = 30−150 @ IC
= 3.0 Adc − 2N6111, 2N6288
= 2.3 (Min) @ IC = 7.0 Adc − All Devices
•Collector−Emitter Sustaining Voltage −
VCEO(sus) = 30 Vdc (Min) − 2N6111, 2N6288
= 50 Vdc (Min) − 2N6109
= 70 Vdc (Min) − 2N6107, 2N6292
•High Current Gain − Bandwidth Product
fT= 4.0 MHz (Min) @ IC = 500 mAdc − 2N6288, 90, 92
= 10 MHz (Min) @ IC = 500 mAdc − 2N6107, 09, 11
•TO−220AB Compact Package
•Pb−Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating Symbol Value Unit
Collector−Emitter Voltage
2N6111, 2N6288
2N6109
2N6107, 2N6292
VCEO 30
50
70
Vdc
Collector−Base Voltage
2N6111, 2N6288
2N6109
2N6107, 2N6292
VCB 40
60
80
Vdc
Emitter−Base Voltage VEB 5.0 Vdc
Collector Current − Continuous
− Peak
IC7.0
10
Adc
Base Current IB3.0 Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
PD40
0.32
W
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +150 °C
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 3.125 _C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
7 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
30 − 50 − 70 VOLTS, 40 WATTS
TO−220AB
CASE 221A
STYLE 1
123
4
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MARKING
DIAGRAM
2N6xxxG
AYWW
2N6xxx = Specific Device Code
xxx = See Table on Page 4
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
See detailed ordering, marking, and shipping information in
the package dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
PNP − 2N6107, 2N6109, 2N6111; NPN − 2N6288, 2N6292
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2
40
00 20 40 60 80 100 120 160
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
20
30
140
10
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 100 mAdc, IB = 0) 2N6111, 2N6288
2N6109
2N6107, 2N6292
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VCEO(sus)
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
30
50
70
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
−
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 20 Vdc, IB = 0) 2N6111, 2N6288
(VCE = 40 Vdc, IB = 0) 2N6109
(VCE = 60 Vdc, IB = 0) 2N6107, 2N6292
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ICEO
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
1.0
1.0
1.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc) 2N6111, 2N6288
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc) 2N6109
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc) 2N6107, 2N6292
(VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) 2N6111, 2N6288
(VCE = 50 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) 2N6109
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) 2N6107, 2N6292
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ICEX
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
−
−
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
100
100
100
2.0
2.0
2.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
1.0
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 2.0 Adc, VCE = 4.0 Vdc) 2N6107, 2N6292
(IC = 2.5 Adc, VCE = 4.0 Vdc) 2N6109
(IC = 3.0 Adc, VCE = 4.0 Vdc) 2N6111, 2N6288
(IC = 7.0 Adc, VCE = 4.0 Vdc) All Devices
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
hFE
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
30
30
30
2.3
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
150
150
150
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage (IC = 7.0 Adc, IB = 3.0 Adc)
ÎÎÎÎÎ
ÎÎÎÎÎ
VCE(sat)
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
3.5
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage (IC = 7.0 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(on)
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
3.0
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current Gain — Bandwidth Product (Note 4)
(IC = 500 mAdc, VCE = 4.0 Vdc, ftest = 1.0 MHz) 2N6288, 92
2N6107, 09, 11
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
fT
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
4.0
10
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
Cob
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
250
ÎÎÎ
ÎÎÎ
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small−Signal Current Gain (IC = 0.5 Adc, VCE = 4.0 Vdc, f = 50 kHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
hfe
ÎÎÎ
ÎÎÎ
20
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
−
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. fT = |hfe| • ftest
PNP − 2N6107, 2N6109, 2N6111; NPN − 2N6288, 2N6292
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3
Figure 2. Switching Time Test Circuit
+11 V
25 ms
0
-9.0 V
RB
-4 V
D1
SCOPE
VCC
+30 V
RC
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
51
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS
2.0
0.07
Figure 3. Turn−On Time
IC, COLLECTOR CURRENT (AMP)
1.0
0.7
0.5
0.3
0.2
0.1
0.02 0.1 0.2 0.3 0.5 2.0 3.0 7.0
TJ = 25°C
VCC = 30 V
IC/IB = 10
0.05
t, TIME (s)μ
tr
1.0 5.0
td @ VBE(off) ≈ 5.0 V
0.07
0.03
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.5
0.2
0.1
0.05
0.02
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0.05 1.0 2.0 5.0 10 20 50 100 200 1.0 k500
ZqJC(t) = r(t) RqJC
RqJC = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02 0.1 0.50.2
PNP − 2N6107, 2N6109, 2N6111; NPN − 2N6288, 2N6292
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4
15
1.0
Figure 5. Active−Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
7.0
5.0
2.0
0.15 5.0 10
CURRENT LIMIT
SECONDARY
BREAKDOWN LIMIT
THERMAL LIMIT
@ TC = 25°C (SINGLE PULSE)
7.0
IC,
CO
LLE
C
T
O
R
C
URRENT (AMP
S
)
dc
0.1 ms
1.0
0.5
0.2
0.3
2.0 3.0
0.5 ms
20 30 50 70 100
3.0
0.7
0.1
ms
5.0 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
TJ(pk) v 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
300
0.5
VR, REVERSE VOLTAGE (VOLTS)
30 3.0 5.0 501.0 2.0
C, CAPACITANCE (pF)
200
70
50
TJ = 25°C
Cib
100
Figure 6. Turn−Off Time
10 20 30
5.0
0.07
Figure 7. Capacitance
IC, COLLECTOR CURRENT (AMP)
3.0
2.0
1.0
0.7
0.5
0.3
0.05 0.1 0.2 0.3 0.5 2.0 3.0 7.0
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
0.1
t, TIME (s)μ
tr
1.0 5.0
0.2
0.07
ts
Cob
ORDERING INFORMATION
Device Device Marking Package Shipping
2N6107
2N6107
TO−220AB
50 Units / Rail
2N6107G TO−220AB
(Pb−Free)
2N6109
2N6109
TO−220AB
50 Units / Rail
2N6109G TO−220AB
(Pb−Free)
2N6111
2N6111
TO−220AB
50 Units / Rail
2N6111G TO−220AB
(Pb−Free)
2N6288
2N6288
TO−220AB
50 Units / Rail
2N6288G TO−220AB
(Pb−Free)
2N6292
2N6292
TO−220AB
50 Units / Rail
2N6292G TO−220AB
(Pb−Free)
PNP − 2N6107, 2N6109, 2N6111; NPN − 2N6288, 2N6292
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5
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.036 0.64 0.91
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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2N6107/D
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