FDMA1028NZ
Dual N-Channel PowerTrench MOSFET
General Description
This device is designed specifically as a single package
solution for dual switching requirements in cellular
handset and other ultra-portable applications. It
features two independent N-Channel MOSFETs with
low on-state resistance for minimum conduction losses.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
linear mode applications.
Features
x 3.7 A, 20V. RDS(ON) = 68 m: @ VGS = 4.5V
R
DS(ON) = 86 m: @ VGS = 2.5V
x Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
x RoHS Compliant
3
2
1
4
5
6
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source
Voltage r12 V
Drain Current – Continuous (Note 1a) 3.7
ID– Pulsed 6
A
Power Dissipation for Single Operation (Note 1a) 1.4
PD
(Note 1b) 0.7
W
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 qC
Thermal Characteristics
RTJA Thermal Resistance, Junction-to-Ambient (Note 1a) 86 (Single Operation)
RTJA Thermal Resistance, Junction-to-Ambient (Note 1b) 173 (Single Operation)
RTJA Thermal Resistance, Junction-to-Ambient (Note 1c) 69 (Dual Operation)
RTJA Thermal Resistance, Junction-to-Ambient (Note 1d) 151 (Dual Operation)
qC/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
028 FDMA1028NZ 7’’ 8mm 3000 units
FDMA1028NZ Dual N-Channel PowerTrench MOSFET
MicroFET 2x2
S1
G1
D1
S2
G2
D2
PIN 1
S1 G1 D2
D1 G2 S2
D1 D2
xHBM ESD protection level > 2kV (Note 3)
Free from halogenated compounds and antimony
oxides
Publication Order Number:
FDMA1028NZ/D
203 Semiconductor Components Industries, LLC.
October-2017, Rev. 2
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Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 PA20 V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 PA, Referenced to 25qC 15
mV/qC
IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 PA
IGSSGate–Body Leakage VGS = ± 12 V, VDS = 0 V ±10 PA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 PA0.6 1.0 1.5 V
'VGS(th)
'TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 PA, Referenced to 25qC–4
mV/qC
RDS(on) Static Drain–Source
On–Resistance
VGS = 4.5 V, ID = 3.7 A
VGS = 2.5 V, ID = 3.3 A
VGS= 4.5 V, ID = 3.7 A, TJ=125qC
37
50
53
68
86
90
m:
gFS Forward Transconductance VDS = 10 V, ID = 3.7 A 16 S
Dynamic Characteristics
Ciss Input Capacitance 340 pF
Coss Output Capacitance 80 pF
Crss Reverse Transfer Capacitance
VDS = 10 V, V GS = 0 V,
f = 1.0 MHz
60 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 8 16 ns
trTurn–On Rise Time 8 16 ns
td(off) Turn–Off Delay Time 14 26 ns
tfTurn–Off Fall
Time
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6 :
3
6 ns
Qg Total Gate Charge 4 6 nC
Qgs Gate–Source Charge 0.7
nC
Qgd Gate–Drain Charge
VDS = 10 V, ID = 3.7 A,
VGS = 4.5 V
1.1 nC
FDMA1028NZ Dual N-Channel PowerTrench
MOSFET
Rg Gate Resistance 25 Ω
FDMA1028NZ Dual N-Channel PowerTrench MOSFET
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Electrical Characteristics TJ = 25 °C unless otherwise noted
Notes:
1. RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the
user's board design.
(a) RθJA = 86 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation.
(b) RθJA = 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation.
(c) RθJA = 69 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation.
(d) RθJA = 151 oC/W when mounted on a minimum pad of 2 oz copper. For dual operation.
a. 86 °C/W when mounted on
a 1 in2 pad of 2 oz copper b. 173 °C/W when mounted on
a minimum pad of 2 oz copper
c. 69 °C/W when mounted on
a 1 in2 pad of 2 oz copper d. 151 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
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Typical Characteristics
0
1
2
3
4
5
6
00.2 0.4 0.6 0.8 1 1.2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
2.5V 2.0V
V
GS
= 4.5V
3.0V
3.5V
1.5V
0.8
1
1.2
1.4
1.6
1.8
2
0123456
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 2.0V
2.5V
3.5V
4.5V
3.0V
4.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
-50 -25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 3.7A
V
GS
= 4.5V
0.03
0.05
0.07
0.09
0.11
0.13
0246810
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 1.85A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
1
2
3
4
5
6
0.511.522.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDMA1028NZ Dual N-Channel PowerTrench MOSFET
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Typical Characteristics
0
2
4
6
8
10
0246810
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 3.7A V
DS
= 5V
10V
15V
0
100
200
300
400
500
0 5 10 15 20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
10s
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 4.5V
SINGLE PULSE
R
TJA
= 173°C/W
T
A
= 25°C
10ms
1ms
100us
0
10
20
30
40
50
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
TJA
= 173°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power
Dissipation.
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
R
TJA
(t) = r(t) * R
TJA
R
TJA
=173 °C/W
T
J
- T
A
= P * R
TJA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDMA1028NZ Dual N-Channel PowerTrench MOSFET
Dimensional Outline and Pad Layout
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MOSFET
FDMA1028NZ Dual N-Channel PowerTrench
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