PRODUCT BENEFITS
Low Losses
Low Noise Switching
Cooler Operation
Higher Reliability Systems
Increased System Power
Density
PRODUCT FEATURES
Ultrafast Recovery Times
Soft Recovery Characteristics
Popular SOT-227 Package
Low Forward Voltage
High Blocking Voltage
Low Leakage Current
PRODUCT APPLICATIONS
Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
Free Wheeling Diode
-Motor Controllers
-Converters
Snubber Diode
Uninterruptible Power Supply (UPS)
Induction Heating
High Speed Recti ers
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
053-1201 Rev E 3-2011
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (TC = 80°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
Operating and StorageTemperature Range
Symbol
VR
VRRM
VRWM
IF(AV)
IF(RMS)
IFSM
TJ,TSTG
UNIT
Volts
Amps
°C
APT2X101_100D120J
1200
93
115
1000
-55 to 175
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise speci ed.
DUAL DIE ISOTOP® PACKAGE
APT2X100D120J APT2X101D120J APT2X101D120J 1200V 93A
APT2X100D120J 1200V 93A
Symbol
VF
IRM
CT
UNIT
Volts
μA
pF
MIN TYP MAX
2.0 2.5
2.3
1.8
250
500
120
Forward Voltage
Maximum Reverse Leakage Current
Junction Capacitance, VR = 200V
IF = 100A
IF = 200A
IF = 100A, TJ = 125°C
VR = VR Rated
VR = VR Rated, TJ = 125°C
Microsemi Website - http://www.microsemi.com
Anti-Paralle l P aralle l
2
1
323
414
SOT-227
IS OT OP
®
1
23
4
file # E145592
"UL Recognized"
053-1201 Rev E 3-2011
DYNAMIC CHARACTERISTICS
THERMAL AND MECHANICAL CHARACTERISTICS
Microsemi Reserves the right to change, without notice, the speci cations and information contained herein.
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
Package Weight
Maximum Terminal & Mounting Torque
Symbol
RθJC
RθJA
WT
Torque
MIN TYP MAX
.41
20
1.03
29.2
10
1.1
UNIT
°C/W
oz
g
lb•in
N•m
MIN TYP MAX
- 47
- 420
- 1250
- 7 -
- 580
- 5350
- 19 -
- 220
- 10300
- 70
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
trr
trr
Qrr
IRRM
trr
Qrr
IRRM
trr
Qrr
IRRM
Test Conditions
IF = 100A, diF/dt = -200A/μs
VR = 800V, TC = 25°C
IF = 100A, diF/dt = -200A/μs
VR = 800V, TC = 125°C
IF = 100A, diF/dt = -1000A/μs
VR = 800V, TC = 125°C
IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
APT2X101_100D120J
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
10
-5
10
-4
10
-3
10
-2
0.1 1
ZθJC, THERMAL IMPEDANCE (°C/W)
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.5
SINGLE PULSE
0.1
0.3
0.7
0.9
0.05
Peak T
J
= P
DM
x Z
θJC
+
TC
Duty Factor D =
t1
/
t2
t2
t1
P
DM
Note:
053-1201 Rev E 3-2011
APT2X101_100D120J
TYPICAL PERFORMANCE CURVES
TJ=125°C
VR=800V
50A
100A
200A
trr
Qrr
Qrr
trr
IRRM
Q
rr, REVERSE RECOVERY CHARGE IF, FORWARD CURRENT
(nC) (A)
I
RRM, REVERSE RECOVERY CURRENT trr, REVERSE RECOVERY TIME
(A) (ns)
TJ = -55°C
TJ = 25°C
TJ = 125°C
TJ = 150°C
V
F, ANODE-TO-CATHODE VOLTAGE (V) -diF/dt, CURRENT RATE OF CHANGE(A/μs)
Figure 2. Forward Current vs. Forward Voltage Figure 3. Reverse Recovery Time vs. Current Rate of Change
-diF/dt, CURRENT RATE OF CHANGE (A/μs) -diF/dt, CURRENT RATE OF CHANGE (A/μs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change Figure 5. Reverse Recovery Current vs. Current Rate of Change
Duty cycle = 0.5
TJ=150°C
TJ=125°C
VR=800V
140
120
100
80
60
40
20
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1200
1000
800
600
400
200
0
C
J, JUNCTION CAPACITANCE Kf, DYNAMIC PARAMETERS
(pF) (Normalized to 1000A/μs)
I
F(AV) (A)
T
J, JUNCTION TEMPERATURE (°C) Case Temperature (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature Figure 7. Maximum Average Forward Current vs. CaseTemperature
VR, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
200A
100A
50A
300
250
200
150
100
50
0
0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 1200
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200
100A
50A
200A
TJ=125°C
VR=800V
700
600
500
400
300
200
100
0
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 25 50 75 100 125 150
.6 1 10 100 200
053-1201 Rev E 3-2011
APT2X101_100D120J
APT2X100D120J APT2X101D120J
SOT-227 Package Outline
4
3
1
2
5
5
Zero
1
2
3
4
diF/dt - Rate of Diode Current Change Through Zero Crossing.
IF - Forward Conduction Current
IRRM - Maximum Reverse Recovery Current.
trr - Reverse
R
ecovery Time, measured from zero crossing where diode
Qrr - Area Under the Curve Defined by IRRM and trr.
current goes from positive to negative, to the point at which the straight
line through I
RRM
and 0.25 I
RRM
passes through zero.
Figure 9. Diode Test Circuit
Figure 10, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
PEARSON 2878
CURRENT
TRANSFORMER
diF/dt Adjust
30μH
D.U.T.
+18V
0V
Vr
trr/Qrr
Waveform
APT75GP120B2LL
Anode 1
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4 H100
(4 places )
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
Anode 2
Anti-paralle l P aralle l
Cathode 1
r = 4.0 (.157)
(2 places) 4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Cathode 2
Anode 1
Cathode 2 Anode 2
Cathode 1