Electrical Characteristics (TJ=25°C unless otherwise noted)
Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5 second pulse
on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where
the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design, howev-
er RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
Note 2: Pulse test: Pulse Width = 300 µs
Note 3: Guaranteed by design. Not subject to production testing.
Symbol Description Conditions Min Typ Max Units
DC Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250µA 30 V
RDS(ON) Drain-Source ON-Resistance 2VGS=10V, ID=4.8A 40 50 mΩ
VGS=4.5V, ID=3.8A 60 80
ID(ON) On-State Drain Current 2VGS=10V, VDS=5V (Pulsed) 24 A
VGS(th) Gate Threshold Voltage VGS=VDS, ID=250µA 1.0 V
IGSS Gate-Body Leakage Current VGS=±20V, VDS=0V ±100 nA
IDSS Drain Source Leakage Current VGS=0V, VDS=30V 1 µA
VGS=0V, VDS=30V, TJ=70°C 5
gfs Forward Transconductance 2VDS=5V, ID=4.8A 6 S
Dynamic Characteristics 3
QGTotal Gate Charge VDS=15V, RD=3.2Ω, VGS=5V 4.5 nC
QGT Total Gate Charge VDS=15V, RD=3.2Ω, VGS=10V 8.5 nC
QGS Gate-Source Charge VDS=15V, RD=3.2Ω, VGS=10V 1.5 nC
QGD Gate-Drain Charge VDS=15V, RD=3.2Ω, VGS=10V 1.3 nC
tD(ON) Turn-ON Delay VDD=15V, VGS=10V, RD=3.2Ω, RG=6ΩTBD ns
tRTurn-ON Rise Time VDD=15V, VGS=10V, RD=3.2Ω, RG=6ΩTBD ns
tD(OFF) Turn-OFF Delay VDD=15V, VGS=10V, RD=3.2Ω, RG=6ΩTBD ns
tFTurn-OFF Fall Time VDD=15V, VGS=10V, RD=3.2Ω, RG=6ΩTBD ns
Source-Drain Diode Characteristics
VSD Source-Drain Forward Voltage 2VGS=0, IS=4.8A 1.4 V
ISContinuous Diode Current 11.7 A
AAT7128
30V N-Channel Power MOSFET
27128.2002.11.0.6