BAT 18-04S Silicon PIN Diode Preliminary data 4 5 Low-loss VHF / UHF switch above 10 MHz 6 PIN diode with low forward resistance 2 3 1 C1/A2 C3 A4 6 5 4 D2 D1 VPS05604 D4 D3 1 2 3 A1 C2 A3/C4 EHA07464 Type Marking BAT 18-04S AVs Pin Configuration Package 1=A1 2=C2 3=A3/C4 4=A4 5=A3 6=C1/A2 SOT-363 Maximum Ratings Parameter Symbol Diode reverse voltage VR 35 V Forward current IF 100 mA Operating temperature range Top -55 ... 150 C Storage temperature Tstg -55 ... 150 Value Unit Thermal Resistance Junction - ambient 1) Junction - soldering point RthJA tbd RthJS tbd K/W 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm 1 Dec-16-1999 BAT 18-04S Electrical Characteristics at TA = 25 C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. IR - - 20 nA IR - - 200 A VF - 0.88 1.2 V CT - 0.75 1 pF rf - 0.4 0.7 Ls - 1.4 - nH DC characteristics Reverse current VR = 20 V Reverse current VR = 20 V, TA = 60 C Forward voltage IF = 50 mA AC characteristics Diode capacitance VR = 20 V, f = 1 MHz Forward resistance IF = 5 mA, f = 100 MHz Series inductance Diode capacitance CT = f (VR) Forward resistance rf = f (IF ) f = 1MHz f = 100MHz CT 2.0 pF 1.8 BAT 18... EHD07019 10 1 rf BAT 18... EHD07020 1.6 1.4 1.2 10 0 1.0 0.8 0.6 0.4 0.2 0.0 0 10 20 V 10 -1 10 -1 30 10 0 10 1 mA 10 2 F VR 2 Dec-16-1999 BAT 18-04S Forward current IF = f (VF ) 10 -1 A IF 10 -2 10 -3 10 -4 10 -5 10 -6 0.40 0.50 0.60 0.70 0.80 V 1.00 VF 3 Dec-16-1999