BAT 18-04S
Dec-16-19991
Silicon PIN Diode
Preliminary data
Low-loss VHF / UHF switch above 10 MHz
PIN diode with low forward resistance
VPS05604
6
3
1
5
4
2
EHA07464
654
321
C1/A2 C3 A4
A3/C4C2A1
D1 D4
D2
D3
Type Marking Pin Configuration Package
BAT 18-04S AVs 1=A1 2=C2 3=A3/C4 4=A4 5=A3 6=C1/A2 SOT-363
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage VR35 V
Forward current IF100 mA
Operating temperature range Top -55 ... 150 °C
Storage temperature Tstg -55 ... 150
Thermal Resistance
Junction - ambient 1) RthJA
tbd K/W
Junction - soldering point RthJS
tbd
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
BAT 18-04S
Dec-16-19992
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
VR = 20 V
IR- - 20 nA
Reverse current
VR = 20 V, TA = 60 °C
IR- - 200 µA
Forward voltage
IF = 50 mA
VF- 0.88 1.2 V
AC characteristics
Diode capacitance
VR = 20 V, f = 1 MHz
CT- 0.75 1 pF
Forward resistance
IF = 5 mA, f = 100 MHz
rf- 0.4 0.7
Series inductance Ls- 1.4 - nH
Diode capacitance CT = f (VR)
f = 1MHz
0
0.0
EHD07019BAT 18...
C
T
R
V
10 20 V 30
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
pF
2.0
Forward resistance rf = f (IF)
f = 100MHz
10
EHD07020BAT 18...
r
f
F
Ι
-1 0
10
1
10
2
10mA
-1
10
Ω
10
1
10
0
BAT 18-04S
Dec-16-19993
Forward current IF = f (VF)
0.40 0.50 0.60 0.70 0.80 V1.00
VF
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
A
I
F
