MOTOROLA SC (XSTRS/R Fd bBE D WM &3b7254 0098694 45T MENOTL MOTOROLA ma SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP7N20 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 7 AMPERES This TMOS Power FET is designed for medium voltage, high Rps{on) = 0-7 OHM speed power switching applications such as switching regulators, 200 VOLTS converters, solenoid and relay drivers. TMOS Silicon Gate for Fast Switching Speeds Switching Times Specified at 100C Designer's Data Ipss, VoS(on) YGS(th} 2nd SOA Specified at Elevated Temperature @ Rugged SOA is Power Dissipation Limited Source-to-Drain Diode Characterized for Use With Inductive Loads G MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage Vpss 200 Vde Drain-Gate Voltage VoGR 200 Vdc (Ras = 1 MQ) Gate-Source Voltage Continuous V6s +20 Vde Non-repetitive (tp < 50 us) | Vasm +40 Vpk Drain Current Adc Continuous Ip 7 Pulsed IDM 18 Total Power Dissipation @ Tc = 25C Pp 76 Watts Derate above 25C 0.6 wre i ~65 ta 1 C Operating and Storage Temperature Range Ty. Tstg 65 to 150 CASE 221A-06 THERMAL CHARACTERISTICS TO-220AB Thermal Resistance CW Junction to Case Rec 1.67 Junction to Ambient TO-220 Raja 62.5 Maximum Lead Temperature for Soldering Th 260 07 Purposes, 1/8 from case for 5 seconds Designer's Data for "Worst Case Conditions The Designer's Data Sheet permits the design of most circuits entirely from the information presented. Limit curves representing boundaries on device characteristics are given to facilitate worst case design ee MOTOROLA TMOS POWER MOSFET DATA 3-300 MOTOROLA SC (CXSTRS/R F) BBE D MM 6367254 OO58695 796 MMOTL MTP7N20 ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) Characteristic | Symbol Min Max Unit | OFF CHARACTERISTICS Drain-Source Breakdown Voltage ViBRIDSS 200 _ Vide (VGs = 0, Ip = 0.25 mA) Zero Gate Voltage Drain Current loss wAde (Vps = Rated Vpsgs, Vgs = 0) - 10 (Vpg = Rated Voss, Vag = 0, Ty = 125C} _ 100 Gate-Body Leakage Current, Forward (Vggp = 20 Vdc, Vpg = 0) IGSSF _ 100 nAdc Gate-Body Leakage Current, Reverse (Vgsp = 20 Vde, Vps = 0) IGSSR = 100 nAdc ON CHARACTERISTICS* Gate Threshold Voltage YGsith) Vde (Vos = Vas, lp = 1 mA) 2 45 Ty = 100C 15 4 Static Drain-Source On-Resistance (Vgg = 10 Vdc, Ip = 3.5 Adc} RDS\on) _ 0.7 Ohm Drain-Source On-Voltage (Vgg = 10 V) VbDS(on) Vde (Ip = 7 Ade) _ 5.9 (Ip = 3.5 Ade, Fy = 100C} 5 Forward Transconductance (Vps = 15 V, ip = 3.5 A} OFS 15 _ mhos DYNAMIC CHARACTERISTICS Input Capacitance (Vps = 25 V. Veg = 0. Ciss - 700 pF Output Capacitance f = 1 MHz) Coss _ 300 Reverse Transfer Capacitance See Figure 11 Cres _ 80 SWITCHING CHARACTERISTICS* (Ty = 100C) Turn-On Delay Time td(on) = 50 ns Rise Time (Vop = 25 V, Ip = 0.5 Rated Ip tr _ 150 - Rgen = 50 ahms) Turn-Off Delay Time See Figures 9, 13 and 14 tdtoff) = 100 Fall Time tf _ 50 Total Gate Charge {Vpg = 0.8 Rated Vpss. Qg 9 (Typ) 20 nc Gate-Source Charge ID = Rated Ip. Vag = 10 ) Qgs 4 (Typ) _ Gate-Drain Charge See Figure 12 Qgq 5 (Typ) - SOURCE DRAIN DIODE CHARACTERISTICS* Forward On-Voltage (lg = Rated Ip Vsp 1.5 {Typ) 3 Vde Forward Turn-On Time Yes = 0) ton Limited by stray inductance Reverse Recovery Time ter 300 (Typ) | - | ns INTERNAL PACKAGE INDUCTANCE (TO-220) Internal Drain Inductance lq nH (Measured from the contact screw on tab to center of die) 3.9 (Typ) (Measured from the drain lead 0.25" from package to center of die} 4.5 (Typ) _ Internal Source Inductance Ls 7.5 (Typ) _ (Measured from the source lead 0.25 from package to source bond pad.) *Pulse Test Pulse Width < 300 us, Duty Cycle = 2% MOTOROLA TMOS POWER MOSFET DATA 3-301 MOTOROLA SC CXSTRS/R F) b&6E D MM 6367254 0098656 bee MMOTE MTP7N20 TYPICAL ELECTRICAL CHARACTERISTICS z 3 = 3 7V Z a 6V 5Vv 0 2 4 6 8 10 Yps. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics 2 5 = a Z a 0 2 4 6 8 10 Vgg. GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3. Transfer Characteristics a = Z & # w S ; g e Q 2 4 6 8 10 Ip, BRAIN CURRENT (AMPS) Figure 5. On-Resistance versus Drain Current 12 14 09 08 Vosith). GATE THRESHOLD VOLTAGE (NORMALIZED) - -2 0 5 50 75 100 125 150 Ty, JUNCTION TEMPERATURE (C) Figure 2. Gate-Threshold Voltage Variation With Temperature = a Veg = 0 ip = 025mA = hm es co) 04 VpRipss}, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 50 0 50 100 150 200 Ty, JUNCTION TEMPERATURE (C) Figure 4. Breakdown Voltage Variation With Temperature RDS{on}- DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) Qo bo 50 0 50 100 150 200 Ty. JUNCTION TEMPERATURE (C) Figure 6. On-Resistance Variation With Temperature ee MOTOROLA TMOS POWER MOSFET DATA 3-302 MTP7N20 MOTOROLA SC (XSTRS/R F) b6E D MM 6367254 0098697 S64 MNOTL SAFE OPERATING AREA INFORMATION 20 10 us 10 we ae 16 _ = 2 = 2 2 1 5 & # Rpsion) MIT -=~- 3 a PACKAGE LIMIT - Zz 4 z THERMAL LIMIT & z S Ty = 150C o Ves = 20V ~ SINGLE PULSE o Te = 25C 0 1 10 200 0 50 100 180 200 250 Vos, DRAIN TO SOURCE VOLTAGE {VOLTS} Vp, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7 Maximum Rated Forward Biased Figure 8. Maximum Rated Switching 3 Safe Operating Area Safe Operating Area FORWARD BIASED SAFE OPERATING AREA The power averaged over a complete switching cycle The FBSOA curves define the maximum drain-to- must be less than: source voltage and drain current that a device can safely TJ{max) Tc handle when it is forward biased, or when it is on, or Rac being turned on. Because these curves include the limi- tations of simultaneous high voltage and high current, up to the rating of the device, they are especially useful to designers of linear systems. The curves are based on a case temperature of 25C and a maximum junction tem- perature of 150C, Limitations for repetitive pulses at var- ious case temperatures can be determined by using the 3 thermal response curves. Motorola Application Note, w ANS5639, Transient Thermal Resistance-General Data and = its Use provides detailed instructions. SWITCHING SAFE OPERATING AREA The switching safe operating area (SOA) of Figure 8 is the boundary that the load line may traverse without incurring damage to the MOSFET, The fundamental limits 1 5 WW 2 50 100 200 500 1000 are the peak current, [pn and the breakdown voltage, V(BR)DSS. The switching SOA shown in Figure 8 is appli- Rg. GATE RESISTANCE (OHMS) cable for both turn-on and turn-off of the devices for Figure 9. Resistive Switching Time switching times less than one microsecond. Variation versus Gate Resistance 1 07 05 wa SH 92 es = Fe 4; D= Rasclt) = r{t) Rauc eZ 0 Phy Raj = 1 67C MAX H yy 007 = 0.01 D CURVES APPLY FOR POWER = ='005 SINGLE PULSE thf PULSE TRAIN SHOWN Eh 003 . tp READ TIME AT ty Ew vv = - op DUTY CYCLE, D = tyity Tyipk) Te = Pipk) Raucit 1 001 001 002 003 005 01 02 03 05 1 2043 #5 10 2 3 50 6100 = 200 300 5001000 t, TIME (ms} Figure 10. Thermal Response MOTOROLA TMOS POWER MOSFET DATA 3-303 MTP7N20 MOTOROLA SC CXSTRS/R F) b&E D MM 6367254 0094698 4TS MENOTL 1000 16 e 3 800 = = we z = 4 600 S = uu = 400 8 S = Lu te 4 200 ie = & os = B > 0 0 20 5 5 16 25 35 0 2 4 6 8 10 Vos | Vos Qg, TOTAL GATE CHARGE (nC) GATE-TO-SOURCE OR DRAIN-TO SOURCE VOLTAGE (VOLTS} Figure 11, Capacitance Variation Figure 12. Gate Charge versus Gate-to-Source Voltage RESISTIVE SWITCHING Vv o% Oe icc ed loft RL dona I) \dloffh tf Vout 30% 30% OUTPUT, Vout PULSE GENERATOR DUT INVERTED CT 7 | Rgen 502 | , | | INPUT, Yin , LT a Tt i = PULSE WIDTH Figure 13. Switching Test Circuit Figure 14. Switching Waveforms MOTOROLA TMOS POWER MOSFET DATA 3-304