ZTX653DCSM
ZTX753DCSM
Document Number 2836
Issue 2
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
COMPLEMENTARY
NPN/PNP DUAL TRANSISTOR IN A
HERMETICALLY SEALED CERAMIC
SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICTIONS
FEATURES
COMPEMENTARY SILICON PLANAR
NPN/PNP TRANSISTORS
HERMETIC SURFACE MOUNT PACKAGE
CECC SCREENING OPTIONS
SPACE QUALITY LEVEL OPTIONS
VCBO Collector – Base Voltage
VCEO Collector – Emitter Voltage
VEBO Emitter – Base Voltage
ICM Peak Pulse Current * Limited package
ICContinuous Collector Current
PTOT Power Dissipation @ Tamb = 25°C
Derate above 25°C
TjTSTG Operating And Storage Temperature Range
RθJ-A Junction - Ambient Thermal Resistance
120V
100V
5V
2A
2A
-120V
-100V
-5V
-2A
-2A
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS PER SIDE (TC= 25°C unless otherwise stated)
ZTX653
PAD 1 – Collector 1
PAD 2 – Base 1
PAD 6 – Emitter 1
ZXT753
PAD 3 – Base 2
PAD 4 – Collector 2
PAD 5 – Emitter 2
1
2
6
3
4
5
2.54 ± 0.13
(0.10 ± 0.005)
0.64 ± 0.06
(0.025 ± 0.003)
0.23
(0.009)
1.40 ± 0.15
(0.055 ± 0.006)
1.65 ± 0.13
(0.065 ± 0.005)
2.29 ± 0.20
(0.09 ± 0.008)
rad.
A
1.27 ± 0.13
(0.05 ± 0.005)
A =
6.22 ± 0.13
(0.245 ± 0.005)
4.32 ± 0.13
(0.170 ± 0.005)
ZTX653 ZTX753
1W
8mW/°C
–55 to 150°C
125°C/W
LCC2 PACKAGE
Underside View
ZTX653DCSM
ZTX753DCSM
Document Number 2836
Issue 2
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter Test Conditions Min. Typ. Max. Unit
Parameter Test Conditions Min. Typ. Max. Unit
IC= 100µA
IC= 10mA
IE= 100µA
VCB = 100V
TC= 100°C
VEB = 4V
IC= 500mA IB= 50mA*
IC= 1A IB= 100mA*
IC= 2A IB= 200mA*
IC= 1A IB= 100mA*
IC= 1A VCE = 2V*
IC= 50mA VCE = 2V*
IC= 500mA VCE = 2V*
IC= 1A VCE = 2V*
IC= 2A VCE = 2V*
ZTX653 ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise stated)
V(BR)CBO Collector – Base Breakdown Voltage
V(BR)CEO Collector – Emitter Breakdown Voltage
V(BR)EBO Emitter – Base Breakdown Voltage
ICBO Collector – Cut-off Current
IEBO Emitter Cut-off Current
VCE(sat) Collector – Emitter Saturation Voltage
VBE(sat) Base – Emitter Saturation Voltage
VBE(on) Base – Emitter Turn-On Voltage
HFE DC Current Gain
120
100
5
0.1
10
0.1
0.2 0.3
0.35 0.5
0.8 1.0
1.0 1.3
0.95 1.2
70 200
100 200 300
55 110
25 55
V
µA
V
fTTransition Frequency
Cobo Output Capacitance
Ton Switching Times
Toff Switching Times
IC= 100mA VCE = 5V f = 100MHz
VCB = 10V f = 1.0MHz
IC= 500mA VCC = 10V
IB1=IB2=50mA
140 175
30
80
1200
MHz
pF
ns
DYNAMIC CHARACTERISTICS (TA= 25°C unless otherwise stated)
* Pulse test tp = 300ms , δ ≤ 2%
ZTX653DCSM
ZTX753DCSM
Document Number 2836
Issue 2
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter Test Conditions Min. Typ. Max. Unit
Parameter Test Conditions Min. Typ. Max. Unit
IC= -100µA
IC= -10mA
IE= -100µA
VCB = -100V
TC= 100°C
VEB = -4V
IC= -500mA IB= -50mA*
IC= -1A IB= -100mA*
IC= -2A IB= -200mA*
IC= -1A IB= -100mA*
IC= -1A VCE = -2V*
IC= -50mA VCE = -2V*
IC= -500mA VCE = -2V*
IC= -1A VCE = -2V*
IC= -2A VCE = -2V*
ZTX753 ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise stated)
V(BR)CBO Collector – Base Breakdown Voltage
V(BR)CEO Collector – Emitter Breakdown Voltage
V(BR)EBO Emitter – Base Breakdown Voltage
ICBO Collector – Cut-off Current
IEBO Emitter Cut-off Current
VCE(sat) Collector – Emitter Saturation Voltage
VBE(sat) Base – Emitter Saturation Voltage
VBE(on) Base – Emitter Turn-On Voltage
HFE DC Current Gain
-120
-100
-5
-0.1
-10
-0.1
-0.2 -0.3
-0.35 -0.5
-0.8 -1.0
-1.0 -1.3
-0.95 -1.2
70 200
100 200 300
55 110
25 55
V
µA
V
fTTransition Frequency
Cobo Output Capacitance
Ton Switching Times
Toff Switching Times
IC= -100mA VCE = -5V f = 100MHz
VCB = -10V f = 1.0MHz
IC= -500mA VCC = -10V
IB1=IB2=-50mA
100 140
30
40
600
MHz
pF
ns
DYNAMIC CHARACTERISTICS (TA= 25°C unless otherwise stated)
* Pulse test tp = 300ms , δ ≤ 2%