TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES * Package type: leaded * Package form: T-13/4 * Dimensions (in mm): O 5 * Peak wavelength: p = 940 nm * High reliability * High radiant power * High radiant intensity * Angle of half intensity: = 17 94 8389 * Low forward voltage * Suitable for high pulse current operation * Good spectral matching with Si photodetectors * Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC DESCRIPTION Note ** Please see document "Vishay Material Category Policy": www.vishay.com/doc?99902 TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic package. APPLICATIONS * Infrared remote requirements control units with high power * Free air transmission systems * Infrared source for optical counters and card readers PRODUCT SUMMARY COMPONENT Ie (mW/sr) (deg) p (nm) tr (ns) 60 17 940 800 TSAL6200 Note * Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE TSAL6200 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-13/4 Note * MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) SYMBOL VALUE Reverse voltage PARAMETER TEST CONDITION VR 5 UNIT V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 s IFM 200 Surge forward current tp = 100 s IFSM 1.5 A Power dissipation PV 160 mW Junction temperature Tj 100 C Operating temperature range Tamb - 40 to + 85 C Storage temperature range Tstg - 40 to + 100 C t 5 s, 2 mm from case Tsd 260 C J-STD-051, leads 7 mm soldered on PCB RthJA 230 K/W Soldering temperature Thermal resistance junction/ambient Rev. 2.3, 24-Aug-11 Document Number: 81010 1 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSAL6200 www.vishay.com Vishay Semiconductors 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 230 K/W 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 0 10 21211 20 30 40 50 60 70 80 90 100 0 21212 Tamb - Ambient Temperature (C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL TYP. MAX. IF = 100 mA, tp = 20 ms VF 1.35 1.6 V IF = 1 A, tp = 100 s VF 2.6 3 V Temperature coefficient of VF IF = 1 mA TKVF - 1.8 Reverse current VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie 40 60 340 500 Forward voltage Junction capacitance Radiant intensity Radiant power Temperature coefficient of e MIN. UNIT mV/K 10 A 200 mW/sr 25 pF IF = 1 A, tp = 100 s Ie IF = 100 mA, tp = 20 ms e 35 mW IF = 20 mA TKe - 0.6 %/K 17 deg nm Angle of half intensity mW/sr Peak wavelength IF = 100 mA p 940 Spectral bandwidth IF = 100 mA 50 nm Temperature coefficient of p IF = 100 mA TKp 0.2 nm/K Rise time IF = 100 mA tr 800 ns Fall time IF = 100 mA tf 800 ns Method: 63 % encircled energy d 2.4 mm Virtual source diameter Rev. 2.3, 24-Aug-11 Document Number: 81010 2 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSAL6200 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 1000 e - Radiant Power (mW) I F - Forward Current (A) 10 1 IFSM = 1 A (Single Pulse) t p/T = 0.01 0.05 10 0 0.1 0.5 1.0 10 -1 10 -2 96 11987 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 1 0.1 10 0 10 2 13602 Fig. 3 - Pulse Forward Current vs. Pulse Duration 104 1.6 103 1.2 102 tP = 100 s tP/T = 0.001 10 4 IF = 20 mA 0.8 0.4 101 0 - 10 0 10 100 0 1 2 3 4 VF - Forward Voltage (V) 13600 50 100 140 T amb - Ambient Temperature (C) 94 7993 Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature 1000 1.25 e rel - Relative Radiant Power I e - Radiant Intensity (mW/sr) 10 1 10 2 10 3 I F - Forward Current (mA) Fig. 6 - Radiant Power vs. Forward Current Ie rel; e rel IF - Forward Current (mA) 100 100 10 1 1.0 0.75 0.5 0.25 IF = 100 mA 0.1 0 10 0 13601 10 1 10 2 10 3 I F - Forward Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current Rev. 2.3, 24-Aug-11 890 10 4 14291 940 990 - Wavelength (nm) Fig. 8 - Relative Radiant Power vs. Wavelength Document Number: 81010 3 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSAL6200 www.vishay.com 0 Vishay Semiconductors 10 20 40 1.0 0.9 50 0.8 60 70 0.7 - Angular Displacement I e rel - Relative Radiant Intensity 30 80 0.6 0.4 0.2 0 14329 Fig. 9 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters O 5.8 0.15 C R 2.49 (sphere) (3.5) 34.3 0.55 < 0.7 8.7 0.3 7.7 0.15 A Area not plane + 0.2 0.6 - 0.1 1 min. O 5 0.15 0.15 0.5 +- 0.05 0.15 0.5 +- 0.05 technical drawings according to DIN specifications 2.54 nom. Drawing-No.: 6.544-5259.06-4 Issue: 6; 19.05.09 19257 Rev. 2.3, 24-Aug-11 Document Number: 81010 4 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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