TSAL6200
www.vishay.com Vishay Semiconductors
Rev. 2.3, 24-Aug-11 1Document Number: 81010
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
DESCRIPTION
TSAL6200 is an infrared, 940 nm emitting diode in
GaAlAs/GaAs technology with high radiant power molded in
a blue-gray plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 17°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Infrared remote control units with high power
requirements
• Free air transmission systems
• Infrared source for optical counters and card readers
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
94 8389
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)
TSAL6200 60 ± 17 940 800
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSAL6200 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA
Surge forward current tp = 100 μs IFSM 1.5 A
Power dissipation PV160 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 85 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from case Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm soldered on PCB RthJA 230 K/W
TSAL6200
www.vishay.com Vishay Semiconductors
Rev. 2.3, 24-Aug-11 2Document Number: 81010
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100
21211 Tamb - Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
RthJA = 230 K/W
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
21212
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF1.35 1.6 V
IF = 1 A, tp = 100 μs VF2.6 3 V
Temperature coefficient of VFIF = 1 mA TKVF - 1.8 mV/K
Reverse current VR = 5 V IR10 μA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj25 pF
Radiant intensity IF = 100 mA, tp = 20 ms Ie40 60 200 mW/sr
IF = 1 A, tp = 100 μs Ie340 500 mW/sr
Radiant power IF = 100 mA, tp = 20 ms φe35 mW
Temperature coefficient of φeIF = 20 mA TKφe- 0.6 %/K
Angle of half intensity ϕ± 17 deg
Peak wavelength IF = 100 mA λp940 nm
Spectral bandwidth IF = 100 mA Δλ 50 nm
Temperature coefficient of λpIF = 100 mA TKλp0.2 nm/K
Rise time IF = 100 mA tr800 ns
Fall time IF = 100 mA tf800 ns
Virtual source diameter Method: 63 % encircled energy d 2.4 mm
TSAL6200
www.vishay.com Vishay Semiconductors
Rev. 2.3, 24-Aug-11 3Document Number: 81010
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Radiant Power vs. Forward Current
Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature
Fig. 8 - Relative Radiant Power vs. Wavelength
tp- Pulse Duration (ms)
96 11987
10
0
101
10
1
10
-1
10-1 100102
10-2
I - Forward Current (A)
F
tp/T = 0.01
IFSM = 1 A (Single Pulse)
0.05
0.1
0.5
1.0
V
F
- Forward Voltage (V)
13600
101
100
102
103
104
t
P
= 100 µs
t
P
/T = 0.001
0
I
F
- Forward Current (mA)
4
32
1
13601
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
I
F
- Forward Current (mA)
I - Radiant Intensity (mW/sr)
e
- Radiant Power (mW)
e
I
F
- Forward Current (mA)
13602
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
Φ
- 10 10 50 0 100
0
0.4
0.8
1.2
1.6
Ie rel;
140
94 7993
IF = 20 mA
Φe rel
T
amb - Ambient Temperature (°C)
890
0
0.25
0.5
0.75
1.0
1.25
λ - Wavelength (nm)
14291
- Relative Radiant Power
e rel
Φ
I
F
= 100 mA
990
940
TSAL6200
www.vishay.com Vishay Semiconductors
Rev. 2.3, 24-Aug-11 4Document Number: 81010
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
34.3 ± 0.55
0.5 + 0.15
- 0.05
Ø 5 ± 0.15
Area not plane
technical drawings
according to DIN
specifications
8.7 ± 0.3
2.54 nom.
1 min. < 0.7
0.5 + 0.15
- 0.05
AC
Ø 5.8 ± 0.15
7.7 ± 0.15
0.6 + 0.2
- 0.1
R 2.49 (sphere)
(3.5)
Drawing-No.: 6.544-5259.06-4
Issue: 6; 19.05.09
19257
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 02-Oct-12 1Document Number: 91000
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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