2093 2090 LD (Low Drive) Series Voss= 100V N Channel Power MOSFET (4227 Features - Low ON resistance. - Very high-speed switching. - Low-voltage drive. - Surface mount type device making the following possible. - Reduction in the number of manufacturing processes for 28K 1909-applied equipment. - High density surface mount applications. - Small size of 25K1909-applied equipment. ITA Absolute Maximum Ratings at Ta = 25C unit Drain to Source Voltage Voss 100 Vv Gate to Source Voltage Vass 15 Vv Drain Current(DC) Ip 25 A Drain Current(Pulse) Ipp PW < 10zs, duty cycle=1% 100 A Allowable Power Dissipation Pp 1.65 Ww T.=25C 70 W Channel Temperature Tch 150 C Storage Temperature Tstg 55to+150 C Electrical Characteristics at Ta= 25C min typ max unit D-S Breakdown Voltage Viprypss Ip=1mA,Vgs=90 100 Vv G-S Breakdown Voltage Vsress Ig= 100A,Vps=0 15 Vv Zero Gate Voltage Ipss Vps= 100V,Vas=0 100 4A Drain Current Gate to Source Leakage Current Igss Ves= 12V,Vps=0 +10 pA Cutoff Voltage Vesom Vps=10V,iIp=1mA 1.0 2.0 Forward Transfer Admittance [|),/ Vpg=10V,Ip=12A 15 24.5 Static Drain to Source Rpswon) Ip=12A,Vgg=10V 60 80 moa on State Resistance Rpsion) + In=12A,Vgs=4V 80 110 mQ Continued on next page. Package Dimensions 2093 Package Dimensions 2090 (unit : mm), baa |. (unit : mm) f 5 02 wi a =| eg oO a q lJ 1.2 *| e = q d oe fs 4 6 0 G : Gate D : Drain G: Gate S : Source a D : Drain SANYO: SMP-FD : urce SANYO: SMP 51193TH (KOTO) X-8377 No.4227-1/3 224 ES 7997076 00140e1 che 25K1909 Continued from preceding page. min typ max unit Input Capacitance Ciss Vps= 20V,f= iMHz 1900 pF Output Capacitance Coss Vps= 20V,f= 1MHz 300 pF Reverse Transfer Capacitance Cygg Vps= 20V f= 1MHz 60 pF Turn-ON Delay Time taton) See specified Test Circuit. 15 ns Rise Time ty % 20 ns Turn-OFF Delay Time tacom 4 290 ns Fall Time tr % 100 ns Diode Forward Voltage Vsp Ig=25A,Vgs=0 10 15 Vv Switching Time Test Circuit Vpo=S0v Vin 10V ov JL Ips4iea Vin Ru =4,470 PW=10a8 v D.C, 4x ouT P.G AM } 28K1909 Ip_- Ves * Vps=10V s Ls < < L- | | oO 2 3 SS = * e rye E E 30 4 3 5 af Oo 2 Oo 4 2 20 / x ~ 10 10 YZ Q 3 i OG 2 3 4 5 6 Drain to Source Voltage, Vps V Gate to Source Veltage,Vgs V [Yih - | Rps(on) - Vos Vps=10V wo T= 25C _ C Ip=12A & & 120 > ; \ Z 10 5 B 3 Ba & 22 3 eB 3 : Sz % ag 5 E 10 Ag m ga a4 = a % 2 no ce 1.0 10 10 9 4 10 12 4 16 Drain Current,Ip A Gate to Source Voltage,Vgs V 225 7997076 OO140ee 149 25K1909 1 Rps(on) - Te y0000 Ciss. Coss, Crss_ Vos Ip=12A F u20 { #10 4 Le fey z a 2 2 ! 8 on =. 4 2 38 | | o 5 a 3 mM Paid 40 oO [J 23 BA 20 ES to -40 0 40 80 120 160 26 28 (32 Case Temperature,T, C Drain to Source Voltage, Vps V wo SWTime - Ip ASO 1 8 tr Drain CurrentIp A Operation in this area is t d(on) limited by Rpgcon) i I Switching Time,SW Time ns Ss 19 pulse = 25C 1.0 1 10 Drain Current,Ip A Drain to Source Voltage,Vps V Pp - T. Po - T 2.0 OD a D z z I I aL on f8 ~ a zg N = 2 6 3 3B o B12 3 2 o4 f a Q a ne ws ba by 08 Neg g 2 2 Ou a = 2 2 a S 0.4 8 = = 0 oy TAO IN . Oo Li 0 20 40 60 80 10 120 %O 160 Ambient Temperature,T, C Case Temperature,T, C 237997076 OO14023 O15 226