Single P-Channel (-1.5 V) Specified PowerTrench(R) MOSFET -20 V, -0.83 A, 0.5 : Features tm General Description Max rDS(on) = 0.5 : at VGS = -4.5 V, ID = -0.83 A This Single P-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the rDS(on)@VGS = -1.5 V. Max rDS(on) = 0.7 : at VGS = -2.5 V, ID = -0.70 A Max rDS(on) = 1.2 : at VGS = -1.8 V, ID = -0.43 A Max rDS(on) = 1.8 : at VGS = -1.5 V, ID = -0.36 A Application HBM ESD protection level = 1400 V (Note 3) Li-Ion Battery Pack RoHS Compliant G S 1 G D 3 S SC89-3 D 2 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) -Pulsed PD TJ, TSTG Ratings -20 Units V 8 V -0.83 -1.0 Power Dissipation (Note 1a) 0.625 Power Dissipation (Note 1b) 0.446 Operating and Storage Junction Temperature Range -55 to +150 A W C Thermal Characteristics RTJA Thermal Resistance, Junction to Ambient (Note 1a) 200 RTJA Thermal Resistance, Junction to Ambient (Note 1b) 280 C/W Package Marking and Ordering Information Device Marking E Device FDY102PZ (c)2010 Fairchild Semiconductor Corporation FDY102PZ Rev.B2 Package SC89-3 1 Reel Size 7" Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDY102PZ Single P-Channel (-1.5 V) Specified PowerTrench(R) MOSFET February 2010 FDY102PZ Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 PA, VGS = 0 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = -250 PA, referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 PA IGSS Gate to Source Leakage Current VGS = 8 V, VDS = 0 V 10 PA -1.0 V -20 V -11 mV/C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 PA, referenced to 25 C rDS(on) gFS Static Drain to Source On-Resistance Forward Transconductance -0.4 -0.7 3 mV/C VGS = -4.5 V, ID = -0.83 A 0.28 0.5 VGS = -2.5 V, ID = -0.70 A 0.36 0.7 VGS = -1.8 V, ID = -0.43 A 0.47 1.2 VGS = -1.5 V, ID = -0.36 A 0.62 1.8 VGS = -4.5 V, ID = -0.83 A, TJ =125 C 0.39 0.85 VDD = -5 V, ID = -0.83 A 2 : S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1 MHz 100 135 pF 23 35 pF 18 30 pF Switching Characteristics (Note 2) td(on) Turn-On Delay Time 3.5 10 ns tr Rise Time 2.9 10 ns td(off) Turn-Off Delay Time 23 37 ns tf Fall Time 13 23 ns Qg Total Gate Charge 2.2 3.1 Qgs Gate to Source Charge Qgd Gate to Drain "Miller" Charge VDD = -10 V, ID = -0.83 A VGS = -4.5 V, RGEN = 6 : VDD = -10 V, ID = -0.83 A VGS = -4.5 V nC 0.3 nC 0.6 nC Drain-Source Diode Characteristics and Maximum Rating IS Maximum Continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -0.52 A -0.52 (Note 2) IF = -0.83 A, dIF/dt = 100 A/Ps A -1.0 -1.2 V 18 31 ns 3.8 10 nC Notes: 1. RTJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTJA is determined by the user's board design. a) 200 oC/W when mounted on a 1 in2 pad of 2 oz copper. b) 280 oC/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0% 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. (c)2010 Fairchild Semiconductor Corporation FDY102PZ Rev.B2 2 www.fairchildsemi.com FDY102PZ Single P-Channel (-1.5 V) Specified PowerTrench(R) MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted 4.5 1.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -4.5 V VGS = -2.5 V 0.8 VGS = -1.5 V 0.6 VGS = -2.0 V VGS = -1.8 V 0.4 0.2 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 0.0 0.0 0.5 1.0 1.5 4.0 3.5 VGS = -1.8 V 3.0 VGS = -2.0V 2.5 2.0 VGS = -2.5 V 1.5 1.0 0.5 0.0 2.0 VGS = -4.5 V 0.5 Figure 1. On Region Characteristics 1.5 2.0 2.5 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 2.0 ID = -0.83 A VGS = -4.5 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.0 -ID, DRAIN CURRENT (A) -VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 1.6 ID = -0.415 A 1.2 0.8 TJ = 125 oC 0.4 0.0 1.0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) TJ = 25 oC 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 1.0 1 -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX -ID, DRAIN CURRENT (A) PULSE DURATION = 80 Ps DUTY CYCLE = 0.5%MAX VGS = -1.5 V 0.8 VDS = -5 V 0.6 TJ = 125 oC 0.4 TJ = 25 oC 0.2 TJ = -55 oC 0.0 0.5 1.0 1.5 TJ = 125 oC 0.1 TJ = 25 oC 0.01 TJ = -55 oC 0.001 0.0 2.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics (c)2010 Fairchild Semiconductor Corporation FDY102PZ Rev.B2 VGS = 0 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDY102PZ Single P-Channel (-1.5 V) Specified PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 500 5 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -0.83 A Ciss CAPACITANCE (pF) 4 3 VDD = -8 V VDD = -10 V 2 VDD = -12 V 100 Coss 10 Crss f = 1 MHz VGS = 0 V 1 0 0.0 0.5 1.0 1.5 2.0 2.5 1 0.1 3.0 1 20 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 5 2 VGS = 0 V 1 3 10 -ID, DRAIN CURRENT (A) -Ig, GATE LEAKAGE CURRENT (uA) 10 1 10 TJ = 125 oC -1 10 TJ = 25 oC 10 ms 0.1 THIS AREA IS LIMITED BY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 ms DC RTJA = 280 oC/W TA = 25 oC -3 10 1 ms 0 3 6 9 12 0.01 0.1 15 -VGS, GATE TO SOURCE VOLTAGE (V) 1 10 60 -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Gate Leakage Current vs Gate to Source Voltage Figure 10. Forward Bias Safe Operating Area P(PK), PEAK TRANSIENT POWER (W) 30 VGS = -4.5 V SINGLE PULSE 10 o RTJA = 280 C/W o TA = 25 C 1 0.2 -3 10 -2 10 -1 0 10 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation (c)2010 Fairchild Semiconductor Corporation FDY102PZ Rev.B2 4 www.fairchildsemi.com FDY102PZ Single P-Channel (-1.5 V) Specified PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZTJA 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA SINGLE PULSE o RTJA = 280 C/W 0.02 -3 10 -2 10 -1 0 10 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve (c)2010 Fairchild Semiconductor Corporation FDY102PZ Rev.B2 5 www.fairchildsemi.com FDY102PZ Single P-Channel (-1.5 V) Specified PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 1.70 1.50 0.50 0.35 0.25 0.50 3 1.70 1.50 0.98 0.78 1 1.14 1.80 2 (0.15) 0.50 0.50 0.66 LAND PATTERN RECOMMENDATION 1.00 0.78 0.58 0.43 0.28 0.20 0.04 SEE DETAIL A 0.54 0.34 DETAIL A 0.10 0.00 SCALE 2 : 1 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. (c)2010 Fairchild Semiconductor Corporation FDY102PZ Rev.B2 6 www.fairchildsemi.com FDY102PZ Single P-Channel (-1.5 V) Specified PowerTrench(R) MOSFET Dimensional Outline and Pad Layout tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I47 (c)2010 Fairchild Semiconductor Corporation FDY102PZ Rev.B2 7 www.fairchildsemi.com FDY102PZ Single P-Channel (-1.5 V) Specified PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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