t
m
February 2010
FDY102PZ Single P-Channel (–1.5 V) Specified PowerTrench®MOSFET
©2010 Fairchild Semiconductor Corporation
FDY102PZ Rev.B2
www.fairchildsemi.com
1
FDY102PZ
Single P-Channel (–1.5 V) Specified PowerTrench®MOSFET
–20 V, –0.83 A, 0.5 :
Features
Max rDS(on) = 0.5 : at VGS = –4.5 V, ID = –0.83 A
Max rDS(on) = 0.7 : at VGS = –2.5 V, ID = –0.70 A
Max rDS(on) = 1.2 : at VGS = –1.8 V, ID = –0.43 A
Max rDS(on) = 1.8 : at VGS = –1.5 V, ID = –0.36 A
HBM ESD protection level = 1400 V (Note 3)
RoHS Compliant
General Description
This Single P-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process to
optimize the rDS(on)@VGS = –1.5 V.
Application
Li-Ion Battery Pack
SG
G
DS
D
1
3
2
SC89-3
MOSFET Maximum Ratings TA= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage –20 V
VGS Gate to Source Voltage ±8 V
ID
Drain Current -Continuous (Note 1a) –0.83 A
-Pulsed –1.0
PD
Power Dissipation (Note 1a) 0.625 W
Power Dissipation (Note 1b) 0.446
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
RTJA Thermal Resistance, Junction to Ambient (Note 1a) 200 °C/W
RTJA Thermal Resistance, Junction to Ambient (Note 1b) 280
Device Marking Device Package Reel Size Tape Width Quantity
E FDY102PZ SC89-3 7 ” 8 mm 3000 units
FDY102PZ Single P-Channel (–1.5 V) Specified PowerTrench®MOSFET
www.fairchildsemi.com
2
Electrical Characteristics TJ = 25 °C unless otherwise noted
Off Characteristics
On Characteristics (Note 2)
Dynamic Characteristics
Switching Characteristics (Note 2)
Drain-Source Diode Characteristics and Maximum Rating
Symbol Parameter Test Conditions Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage ID = –250 PA, VGS = 0 V –20 V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient ID = –250 PA, referenced to 25 °C -11 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 PA
IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±10 PA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = –250 PA –0.4 –0.7 –1.0 V
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = –250 PA, referenced to 25 °C 3 mV/°C
rDS(on) Static Drain to Source On-Resistance
VGS = –4.5 V, ID = –0.83 A 0.28 0.5
:
VGS = –2.5 V, ID = –0.70 A 0.36 0.7
VGS = –1.8 V, ID = –0.43 A 0.47 1.2
VGS = –1.5 V, ID = –0.36 A 0.62 1.8
VGS = –4.5 V, ID = –0.83 A,
TJ =125 °C 0.39 0.85
gFS Forward Transconductance VDD = –5 V, ID = –0.83 A 2 S
Ciss Input Capacitance VDS = –10 V, VGS = 0 V,
f = 1 MHz
100 135 pF
Coss Output Capacitance 23 35 pF
Crss Reverse Transfer Capacitance 18 30 pF
td(on) Turn-On Delay Time
VDD = –10 V, ID = –0.83 A
VGS = –4.5 V, RGEN = 6 :
3.5 10 ns
trRise Time 2.9 10 ns
td(off) Turn-Off Delay Time 23 37 ns
tfFall Time 13 23 ns
QgTotal Gate Charge VDD = –10 V, ID = –0.83 A
VGS = –4.5 V
2.2 3.1 nC
Qgs Gate to Source Charge 0.3 nC
Qgd Gate to Drain “Miller” Charge 0.6 nC
ISMaximum Continuous Drain-Source Diode Forward Current –0.52 A
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS= –0.52 A (Note 2) –1.0 –1.2 V
trr Reverse Recovery Time IF = –0.83 A, dIF/dt = 100 A/Ps 18 31 ns
Qrr Reverse Recovery Charge 3.8 10 nC
Notes:
1. RTJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTJA is determined by the
user's board design.
2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0%
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
a) 200 oC/W when mounted on
a 1 in2pad of 2 oz copper.
b) 280 oC/W when mounted on a
minimum pad of 2 oz copper.
©2010 Fairchild Semiconductor Corporation
FDY102PZ Rev.B2
FDY102PZ Single P-Channel (–1.5 V) Specified PowerTrench®MOSFET
www.fairchildsemi.com
3
Typical Characteristics TJ = 25 °C unless otherwise noted
Figure 1.
0.00.51.01.52.0
0.0
0.2
0.4
0.6
0.8
1.0
-VDS,DRAIN TO SOURCE VOLTAGE (V)
-ID,DRAIN CURRENT (A)
VGS = -1.8 V
VGS = -2.5 V
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
VGS = -2.0 V
VGS = -1.5 V
VGS = -4.5 V
On Region Characteristics Figure 2.
0.00.51.01.52.02.5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS = -1.8 V
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID,DRAIN CURRENT (A)
VGS = -2.0V
VGS = -2.5 V
VGS = -1.5 V
VGS =-4.5 V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
ID = -0.83 A
VGS = -4.5 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ,JUNCTION TEMPERATURE (oC)
vs Junction Temperature
Figure 4.
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0.0
0.4
0.8
1.2
1.6
2.0
TJ= 125 oC
ID= -0.415 A
TJ= 25 oC
-VGS,GATE TO SOURCE VOLTAGE (V)
rDS(on),DRAIN TO
SOURCE ON-RESISTANCE (:)
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
O n -Re sis tan ce v s G ate to
Source Voltage
Figure 5. Transfer Characteristics
0.51.01.52.0
0.0
0.2
0.4
0.6
0.8
1.0
-VGS, GATE TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
TJ = 125 oC
VDS = -5 V
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
TJ = -55 oC
TJ = 25 oC
TJ= 125 oC
VGS = 0 V
-IS, REVERSE DRAIN CURRENT (A)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
S ou rce to D ra in D io de
Forward Voltage vs Source Current
©2010 Fairchild Semiconductor Corporation
FDY102PZ Rev.B2
FDY102PZ Single P-Channel (–1.5 V) Specified PowerTrench®MOSFET
www.fairchildsemi.com
4
Figure 7.
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
1
2
3
4
5
Qg, GATE CHARGE (nC)
-VGS, GATE TO SOURCE VOLTAGE (V)
ID= -0.83 A
VDD = -12 V
VDD = -10 V
VDD = -8 V
Gate Charge Characteristics Figure 8.
0.1 1 10
1
10
100
f = 1 MHz
VGS = 0 V
CAPACITANCE (pF)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
20
500
C a p a c i t a n c e v s D r a i n
to Source Voltage
F i g u r e 9 . G a t e L e a k a g e C u r r e n t
vs Gate to
03691215
10-3
10-1
101
103
105
VGS = 0 V
TJ= 25 oC
TJ= 125 oC
-VGS,GATE TO SOURCE VOLTAGE (V)
-Ig,GATE LEAKAGE CURRENT (uA)
Source Voltage
Figure 10.
0.1 1 10
0.01
0.1
1
10 ms
1 s
DC
100 ms
10 ms
1 ms
-ID, DRAIN CURRENT (A)
-VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ= MAX RATED
RTJA = 280 oC/W
TA= 25 oC
60
2
F o r w a r d B i a s S a f e
Operating Area
Figure 11. Single Pulse Maximum Power Dissipation
10-3 10-2 10-1 100101100 1000
1
10
P(PK), PEAK TRANSIENT POWER (W)
VGS = -4.5 V SINGLE PULSE
RTJA = 280 oC/W
TA = 25 oC
t, PULSE WIDTH (sec)
30
0.2
Typical Characteristics TJ = 25 °C unless otherwise noted
©2010 Fairchild Semiconductor Corporation
FDY102PZ Rev.B2
FDY102PZ Single P-Channel (–1.5 V) Specified PowerTrench®MOSFET
www.fairchildsemi.com
5
Figure 12.
10-3 10-2 10-1 100101100 1000
0.1
1
0.02
SINGLE PULSE
RTJA = 280 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZTJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
Junction-to-Ambient Transient Thermal Response Curve
Typical Characteristics TJ = 25 °C unless otherwise noted
©2010 Fairchild Semiconductor Corporation
FDY102PZ Rev.B2
FDY102PZ Single P-Channel (–1.5 V) Specified PowerTrench®MOSFET
www.fairchildsemi.com
6
Dimensional Outline and Pad Layout
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC89 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS.
1.70
1.50
0.98
0.78
1.70
1.50
0.50
1.00
0.35
0.25
0.54
0.34
0.43
0.28
0.78
0.58
(0.15)
12
3
LAND PATTERN RECOMMENDATION
1.80
0.50
1.14
0.50
0.50
0.66
SEE DETAIL A 0.20
0.04
DETAIL A
SCALE 2 : 1
0.10
0.00
©2010 Fairchild Semiconductor Corporation
FDY102PZ Rev.B2
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intended to be an exhaustive list of all such trademarks.
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
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®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®*
The Power Franchise®
®
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TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
PSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
t
m
®
t
m
tm
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Rev. I47
™
FDY102PZ Single P-Channel (–1.5 V) Specified PowerTrench®MOSFET
www.fairchildsemi.com
7
©2010 Fairchild Semiconductor Corporation
FDY102PZ Rev.B2
